" SUPERTEX INC OL pe Blarzaeqs OOO1610 0 T 4 LTT az) a>] ae N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BV nog / Rosiony loiony Order Number / Package BVncs {max} (min) TO-3 TO-220 Dice 550V 6Q 1.5A VNO335N1 VNO335N5 VNO335ND 600V 6Q 1.54 VNO360N1 VNO360N5 VNO360ND Features Advanced DMOS Technology 1 Freedom from secondary breakdown These enhancement-mode (normally-off) power transistors util- . : ize a vertical DMOS structure and Supertex's well-proven silicon- (Low power drive requirement gate manufacturing process. This combination produces devices QO Ease of paraileling with the power handling capabilities of bipolar transistors and with b ' O tows nd fast switching speeds the high input impedance and negative temperature coefficient E Wiss 3 O ng SP inherent in MOS devices. Characteristic of all MOS structures, Ww O Excellent thermal stability these devices are free from thermal runaway and thermally- _ Integral Source-Drain diode induced secondary breakdown. tah 7 ; : ; Supertex Vertical DMOS Power FETs are ideally suited to a wide O h input imped nd high High inp pedance and high gain ; range of switching and amplifying applications where high break- i (Q Complementary N- and P-Channel devices down voltage, high input impedance, low input capacitance, and fast switching speeds are desired. ! g Applications Package Options (Note 1) : 0) Motor control 3 O Converters F DD Amplifiers : U. Switches 5 Power supply circuits Oa A O C1 Drivers (Relays, Hammers, Solenoids, Lamps, i Memories, Displays, Bipolar Transistors, etc.) oe [7 7 Q TO-220 Absolute Maximum Ratings Drain-to-Source Voltage BVoss Drain-to-Gate Voltage BV ngs Gate-to-Source Voltage + 20V Operating and Storage Temperature -55C to +150C Soldering Temperature* 300C Note 1: See Package Outline section for discrete pinouts. Distance of 1.6 mm from case for 10 seconds. 8-41 REI New teen re ae eeererereepemneetrennen tr Mt emma ' SUPERTEX INC D1 pe Pfazz325s OOO1lb11 2 I age VNOSF Thermal Characteristics 7-29 - 3 -7 iA Package |, (continuous)* |, (pulsed)* Power Dissipation 9, 0 lon loan @T, = 25C C C TO-3 2.54 6A 100W 1.26 30 2.5A 6A TO- 220 1.54 6A 50w 40 40 1.54 6A "bl (continuous) Is limited by max rated T, i Electrical Characteristics (@ 25C unless otherwise specified) (Notes 1 and 2) Symbol Parameter Min Typ Max Unit Conditions BVDSs Drain-to-Source VNO360 600 Breakdown Voltage VNO355 550 Vv Ve6s= 0, |p = 10mA VGSith) Gate Threshold Voltage 2 4 Vv VGS = VpbS, ID = 10mA AVGS (th) Change in VGS(th} with Temperature -4.8 | -6.0} mv/c | VGs = VpS, ID = 10mA IG@ss Gate Body Leakage 100 nA VGS = 420V, VDsS =0 IDSs Zero Gate Voltage Drain Current 100 HA VGS = 0, VDS = Max Rating 2 mA VGS= 0. VDS = 0.8 Max Rating TA =128C ID{ON) ON-State Drain Current 1.3 A VGS = 5V, VDS = 25V 1.5 3.0 VGS = 10V, VDS = 25V RDS(ON) Static Drain-to-Source 5.5 9 VGs = 5V, ID = 0.25A ON-State Resistance 4.5 6.0 VGS = 10V, 1D =0.5A ARDS(ON) | Change in RDS(ON) with Temperature 1 2 %/C | VGS = 10V, iD = 0.54 Gers Forward Transconductance 0.5 1 3 VDS = 25V, 1p = 0.54 Ciss Input Capacitance 550 650 Coss Common Source Output Capacitance 75 125 pF (esa VDS = 26V Crss Reverse Transfer Capacitance 25 50 - 2 td(ON) Turn-ON Delay Time 8 15 VpD = 25V tr Rise Time 8 15 ns {p =0.5A td(OFF} Turn-OFF Delay Time 65 100 Rs = 502 tf Fall Time 12 25 VSD Diode Forward Voltage Drop 1.1 1.5 Vv Voes=0,1SpD =5A tr Reverse Recovery Time 450 ns VGS =0, ISD =5A Note 1: All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 3001s pulse, 2% duty cycle.) Note 2: All A.C. parameters sample tested. Switching Waveforms and Test Circuit / X%-90% InpuT = 208 _____ (ON) t(OFF) > ee] a SCOPE td(ON) (tr td(OF F) tf D.U.T. OUTPUT ne O% \ Lo 0% 90% 90% 8-42 i SUPERTEX INC eo LEN RT Typical Performance Curves Output Characteristics 7V to 10 g 6V a & & 5V 2 4V 0 10 20 30 40 50 Vos (volts) Transconductance vs. Drain Current Vps = 25V Tra =-55C o c E Ta = 25C s A* 2 oO Ta = 150C 0 i 2 3 4 5 Ip (amperes) Maximum Rated Safe Operating Area 10 TO-220 (pulsed) TO-3 (DC) 4.0 TO-220 (DC) @ 2 a & 2 04 0.01 1 19 100 1000 Vos (volts) ax deQjazzaess ooowse 4 Ip (amperes) VNO3F 7-39-4 Saturation Characteristics {OV 1 2 3 4 Vos (volts) Power Dissipation vs. Case Temperature 100 80 60 Pp (watts) 20 THERMAL RESISTANCE (normalized) 0.001 8-43 40 TO-220 2 80 75 100 125 To (CC) Thermal Response Characteristics 0.01 0.1 4 tp (milliseconds) 150 id SUPERTEX INC Ol pe jareae5s 0001613 6b t VNO3F 7-39-11 BVpss Variation with Temperature On-Resistance vs. Drain Current Veg =5V Ves = 10V B 8 2 a E 5 2 = 5 & g > a ay -50 9 50 100 150 6 1 2 3 4 5 TC) Ip (ampares) Transfer Characteristics Van and Rps Variation with Temperature 12 ofle Vg = 25V ey Ss 4 it Ss s g g 2 gs 1.0 3 g E E Ee g & a = = 0a 3 3 a > c 0.8 07 0 2 4 6 8 10 -60 0 50 100 150 Ves (volts) Tec) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics g gS 6 2 s g = = 2 8 = > oO Crss 0 10 20 30 40 0 2 4 6 8 10 Vps (volts) Qe (nanocoulombs) eo eee - +