DSEP 29-12A HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 1200 V trr = 40 ns with soft recovery VRSM VRRM V V Type C A TO-220 AC C 1200 1200 DSEP 29-12A A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 115C; rectangular, d = 0.5 IFSM TVJ = 45C; tp = 10 ms (50 Hz), sine EAS IAR 35 30 A A 200 A TVJ = 25C; non-repetitive IAS = 11.5 A; L = 180 H 14 mJ VA = 1.25*VR typ.; f = 10 kHz; repetitive 1.2 A -55...+175 175 -55...+150 C C C 165 W 0.4...0.6 Nm 2 g TVJ TVJM Tstg Ptot TC = 25C Md mounting torque Weight typical Symbol Conditions IR VF VR = VRRM; IF = 30 A; Characteristic Values typ. max. TVJ = 25C TVJ = 150C 250 1 A mA TVJ = 150C TVJ = 25C 1.81 2.75 V V 0.9 0.5 K/W K/W ns RthJC RthCH trr IF = 1 A; -di/dt = 200 A/s; VR = 30 V; TVJ = 25C 40 IRM VR = 100 V; IF = 50 A; -diF/dt = 100 A/s TVJ = 100C 8.5 11.4 Features * International standard package * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour * Epoxy meets UL 94V-0 Applications * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders Advantages * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch A Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0% Pulse Width = 300 s, Duty Cycle < 2.0% Data according to IEC 60747 and per diode unless otherwise specified. IXYS reserves the right to change limits, test conditions and dimensions. (c) 2009 IXYS All rights reserved 20091012a 1-3 http://store.iiic.cc/ DSEP 29-12A L Q H B E D F C A G J K IXYS reserves the right to change limits, test conditions and dimensions. (c) 2009 IXYS All rights reserved N M 20091012a 2-3 http://store.iiic.cc/ DSEP 29-12A 60 5 TVJ = 100C VR = 600 V 60 4 40 Qr [C] IF [A] TVJ = 150C 50 100C 25C 30 50 IF = 60 A 30 A 15 A 3 IF = 60 A 30 A 15 A 40 IRM [A] 70 30 2 20 20 1 0 0 1 2 3 0 100 4 0 1000 VF [V] -diF /dt [A/s] Fig. 1 Forward current IF vs. VF Fig. 2 Typ. reverse recovery charge Qr versus -diF/dt 2.0 TVJ = 100C VR = 600 V 200 200 400 600 800 -diF /dt [A/s] 1000 Fig. 3 Typ. peak reverse current IRM versus -diF/dt TVJ = 100C IF = 30 A 100 VFR [V] IF = 60 A 30 A 15 A 180 1.2 160 IRM 1.0 80 0.8 60 0.6 40 0.4 tfr [s] trr [ns] 1.5 Kf 0 120 220 1.0 TVJ = 100C VR = 600 V 10 10 0.5 140 QR 20 0.2 trr VFR 0.0 120 0 40 80 120 TVJ [C] 160 0 0 200 400 600 800 -diF /dt [A/s] 1000 Fig. 5 Typ. recovery time trr vs. -diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ 0 200 400 600 800 -diF /dt [A/s] 0.0 1000 Fig. 6 Typ. peak forward voltage VFR and tfr versus diF/dt 1 ZthJC [K/W] 0.1 Constants for ZthJC calculation: i 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 Rthi (K/W) ti (s) 1 0.502 0.0052 2 0.193 0.0003 3 0.205 0.0162 1 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, test conditions and dimensions. (c) 2009 IXYS All rights reserved 20091012a 3-3 http://store.iiic.cc/