UPA814T
NPN SILICON HIGH
FREQUENCY TRANSISTOR
• SMALL PACKAGE STYLE:
2 NE688 Die in a 2 mm x 1.25 mm package
• LOW NOISE FIGURE:
NF = 1.5 dB TYP at 2 GHz
• HIGH GAIN BANDWIDTH: fT = 9 GHz
• HIGH COLLECTOR CURRENT: 100 mA
FEATURES OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE S06
DESCRIPTION
NEC's UPA814T is two NPN high frequency silicon epitaxial
transistors encapsulated in an ultra small 6 pin SMT package.
Each transistor is independently mounted and easily config-
ured for either dual transistor or cascode operation. The high
fT, low voltage bias and small size make this device suited for
various hand-held wireless applications.
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS PARAMETERS UNITS RATINGS
VCBO Collector to Base Voltage V 9
VCEO Collector to Emitter Voltage V 6
VEBO Emitter to Base Voltage V 2
ICCollector Current mA 100
PTTotal Power Dissipation
1 Die mW 110
2 Die mW 200
TJJunction Temperature °C 150
TSTG Storage Temperature °C -65 to +150
Note: 1.Operation in excess of any one of these parameters may
result in permanent damage.
PART NUMBER UPA814T
PACKAGE OUTLINE S06
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX
ICBO Collector Cutoff Current at VCB = 5V, IE = 0 µA 0.1
IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA 0.1
hFE1Forward Current Gain at VCE = 1 V, IC = 3 mA 80 110 160
fTGain Bandwidth at VCE = 3 V, IC = 20 mA, f = 2 GHz GHz 9.0
Cre2Feedback Capacitance at VCB = 1 V, IE = 0, f = 1 MHz pF 0.75 0.85
|S21E|2Insertion Power Gain at VCE = 3 V, IC =20 mA, f = 2 GHz dB 6.5
NF Noise Figure at VCE = 3 V, IC = 7 mA, f = 2 GHz dB 1.5
hFE1/hFE2 hFE Ratio: 0.85
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
For Tape and Reel version use part number UPA814T-T1, 3K per reel.
Note:
Pin 3 is identified with a circle on the bottom of the package.
PIN OUT
1. Collector Transistor 1
2. Base Transistor 2
3. Collector Transistor 2
4. Emitter Transistor 2
5. Emitter Transistor 1
6. Base Transistor 1
California Eastern Laboratories
hFE1 = Smaller Value of Q1, or Q2
hFE2 = Larger Value of Q1 or Q2
2.1 ± 0.1
1.25 ± 0.1
0 ~ 0.1
0.15
0.9 ± 0.1
0.7
2.0 ± 0.2
0.65
1.3
1
2
34
5
6
0.2 (All Leads)
+0.10
- 0.05
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Total Power Dissipation, P
T
(mW)
Ambient Temperature, TA (°C) Base to Emitter Voltage, VBE (V)
Collector Current, I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Collector to Emitter Voltage, VCE (V)
Collector Current, I
C
(mA)
TYPICAL PERFORMANCE CURVES (TA = 25°C)
DC Current Gain, h
FE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
Collector Current, IC (mA)
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
Gain Bandwidth Product, f
T
(GHz)
Collector Current, IC (mA) Collector Current, IC (mA)
Insertion Power Gain, IS
21e
I
2
(dB)
UPA814T
200
100
0 50 100 150
2 Elements in Total
Per Element
Free Air
100
50
20
10
2
1
0.5
0.1
0.2
0.05
0.02
0.01
5
0 0.5 1
V
CE
= 1 V
30
20
10
0123456
200 µA
180 µA
160 µA
140 µA
120 µA
100 µA
80 µA
60 µA
40 µA
l
B
= 20 µA
200
100
0
12 51020 500.1 0.2 0.5 100
V
CE
= 1 V
10
5
0
1235710
VCE = 1 V
f= 2 GHz
10
5
0
1235710
VCE = 1 V
f= 2 GHz
Frequency, f (GHz)
Maximum Available Power Gain, MAG (dB)
Insertion Power Gain, IS
21e
I
2
(dB)
FEEDBACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
Noise Figure, NF (dB)
NOISE FIGURE vs.
COLLECTOR CURRENT
MAXIMUM AVAILABLE GAIN/INSERTION
POWER GAIN vs. FREQUENCY
Collector to Base Voltage, VCB (V)
TYPICAL PERFORMANCE CURVES (TA = 25°C)
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
PRINTED IN USA ON RECYCLED PAPER -1/99
DATA SUBJECT TO CHANGE WITHOUT NOTICE
PART NUMBER QUANTITY PACKAGING
UPA814T-T1-A 3000 Tape & Reel
ORDERING INFORMATION
UPA814T
Collector Current, lC (mA)
3
2
1
0
1235710
V
CE
= 1 V
f = 2 GHz
f = 1 GHz
Feddback Capacitance, C
RE
(pF)
1.0
0.5
0.1
1 5 10 20
f = 1 MHz
30
20
10
0
0.1 0.5 1 5
V
CE
= 1 V
lc = 5 mA
MAG
IS
21E
I
2
Noise Figure, NF (dB)
NOISE FIGURE vs.
FREQUENCY
Frequency, f (GHz)
1.5
1
0.5
0.1 0.5 1.0 2
VCE = 1 V
lc = 5 mA
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile:
(
408
)
988-0279
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CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A -AZ
Lead (Pb) < 1000 PPM Not Detected (*)
Mercury < 1000 PPM Not Detected
Cadmium < 100 PPM Not Detected
Hexavalent Chromium < 1000 PPM Not Detected
PBB < 1000 PPM Not Detected
PBDE < 1000 PPM Not Detected
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standards, please do not hesitate to contact your local representative.
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provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better
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