VTB Process Photodiodes EG & G VACTEC VTB5040, 5041 PRODUCT DESCRIPTION Planar silicon photodiode in a "flat" window, dual lead TO-5 package. Cathode is common to the case. These diodes have very high shunt resistance and good blue response. PACKAGE DIMENSIONS inch (mm) 182 (4.62) 1,00 (25.4) 472 G37) MINIMUM G10 040 034 (0.25) SOM 7 1.02)" | (0.86) NOM. YY .245 (6.22) * 365 (9.27) "235 (5.97) "355 (9.02) [_ .330 (8.38) 0 17 =200 320 (8.13) (0.43) DIA. NOM. is08) DIA. NOM. CASE14 10-5 HERMETIC CHIP ACTIVE AREA: .008 in? (5.16 mm?) ABSOLUTE MAXIMUM RATINGS Storage Temperature: -40C to 110C Operating Temperature: -40C to 110C ELECTRO-OPTICAL CHARACTERISTICS @ 25C (See also VTB curves, pages 12-13) SYMBOL] CHARACTERISTIC TEST CONDITIONS aad vrBs041 UNITS Min. | Typ. | Max. | Min. | Typ. | Max. | Min. | Typ. | Max. Isc | Short Circuit Current H = 100 fc, 2850 K 35 | 45 35 | 45 BA TC Isc |Isc Temp. Coetficient 2850 K 12 | 23 12 | 23 %/ C Voc | Open Circuit Voltage H = 100 fc, 2850 K 490 490 mV TC Voc | Voc Temp. Coetticient 2850 K -2.0 -2.0 mv /C Dark Current H=0,VR=20V 2000 100 pA Shunt Resistance H=0,V=10 mv 07 1.4 Ge TC Rsu | Rsw Temp. Coefficient H=0,V=10 mV 8.0 -8.0 %/C Cy | Junction Capacitance H=0,V=0 1.0 1.0 nF Sr__| Sensitivity 365 nm 0.1 0.1 A/W Arange | Spectral Application Range 320 1100) 320 1100 am Ap | Spectral Response - Peak 920 920 nm Ver | Breakdown Voltage 2 | 40 2] 40 V 61/2 | Ang. Resp. - 50% Resp. Pt. +45 +45 Degrees Noise Equivalent Power 5.9x10"4 (yp) | 1.310" (Typ) Wiz Specific Detectivity 3.9x10'? (yp) | 1.7x 10" (Typ) omy Fz 0991 26