SQJ260EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V (D-S) 175 C MOSFETs FEATURESS PowerPAK(R) SO-8L Dual Asymmetric * TrenchFET(R) power MOSFET * AEC-Q101 qualified * 100 % Rg and UIS tested D1 * Optimized for synchronous buck applications D2 15 6. m m 13 5. 1 m m 4 G2 Bottom View Top View 2 3 G1 S2 1 S1 * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D1 D2 PRODUCT SUMMARY N-CHANNEL 1 VDS (V) N-CHANNEL 2 60 60 RDS(on) () at VGS = 10 V 0.0190 0.0085 RDS(on) () at VGS = 4.5 V 0.0240 0.0115 20 54 ID (A) Configuration Dual N Package PowerPAK SO-8L Dual Asymmetric G1 G2 S1 N-Channel 1 MOSFET S2 N-Channel 2 MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL N-CHANNEL 1 N-CHANNEL 2 Drain-source voltage VDS 60 60 Gate-source voltage VGS Continuous drain current TC = 25 C TC = 125 C Continuous source current (diode conduction) Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation b L = 0.1 mH TC = 25 C TC = 125 C Operating junction and storage temperature range ID 20 20 a 54 15 31 IS 20 a 44 IDM 60 86 IAS 18 30 EAS 16.2 45 27 48 9 16 PD TJ, Tstg -55 to +175 Soldering recommendations (peak temperature) d, e UNIT V A mJ W C 260 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) PCB mount c SYMBOL N-CHANNEL 1 N-CHANNEL 2 RthJA 85 85 RthJC 5.5 3.1 UNIT C/W Notes a. Package limited b. Pulse test; pulse width 300 s, duty cycle 2 % c. When mounted on 1" square PCB (FR4 material) d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S17-0664-Rev. A, 15-May-17 Document Number: 75486 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ260EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a Forward transconductance b VDS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 A N-Ch 1 60 - - VGS = 0 V, ID = 250 A N-Ch 2 60 - - VDS = VGS, ID = 250 A N-Ch 1 1.5 2.0 2.5 VDS = VGS, ID = 250 A N-Ch 2 1.5 2.0 2.5 N-Ch 1 - - 100 N-Ch 2 - - 100 VDS = 0 V, VGS = 20 V VGS = 0 V VDS = 60 V N-Ch 1 - - 1 VGS = 0 V VDS = 60 V N-Ch 2 - - 1 VGS = 0 V VDS = 60 V, TJ = 125 C N-Ch 1 - - 50 VGS = 0 V VDS = 60 V, TJ = 125 C N-Ch 2 - - 50 VGS = 0 V VDS = 60 V, TJ = 175 C N-Ch 1 - - 250 VGS = 0 V VDS = 60 V, TJ = 175 C N-Ch 2 - - 250 VGS = 10 V VDS 5 V N-Ch 1 15 - - VGS = 10 V VDS 5 V N-Ch 2 30 - - VGS = 10 V ID = 6 A N-Ch 1 - 0.0155 0.0190 VGS = 10 V ID = 10 A N-Ch 2 - 0.0070 0.0085 VGS = 10 V ID = 6 A, TJ = 125 C N-Ch 1 - - 0.0301 VGS = 10 V ID = 10 A, TJ = 125 C N-Ch 2 - - 0.0131 VGS = 10 V ID = 6 A, TJ = 175 C N-Ch 1 - - 0.0366 - 0.0160 VGS = 10 V ID = 10 A, TJ = 175 C N-Ch 2 - VGS = 4.5 V ID = 4 A N-Ch 1 - 0.0200 0.0240 VGS = 4.5 V ID = 8 A N-Ch 2 - 0.0094 0.0115 VDS = 10 V, ID = 6 A N-Ch 1 - 26 - VDS = 10 V, ID = 10 A N-Ch 2 - 49 - V nA A A S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Qg Gate-source charge c Qgs Gate-drain charge c Qgd Gate resistance Rg S17-0664-Rev. A, 15-May-17 VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 1 - 805 1100 VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 2 - 1790 2500 VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 1 - 355 500 VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 2 - 800 1100 VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 1 - 13 20 VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 2 - 32 45 VGS = 10 V VDS = 30 V, ID = 1.5 A N-Ch 1 - 12 20 VGS = 10 V VDS = 30 V, ID = 3 A N-Ch 2 - 25 40 VGS = 10 V VDS = 30 V, ID = 1.5 A N-Ch 1 - 2.6 - VGS = 10 V VDS = 30 V, ID = 3 A N-Ch 2 - 5.4 - VGS = 10 V VDS = 30 V, ID = 1.5 A N-Ch 1 - 1.5 - VGS = 10 V VDS = 30 V, ID = 3 A N-Ch 2 - 3 - N-Ch 1 0.45 0.92 1.4 N-Ch 2 0.2 0.46 0.7 f = 1 MHz pF nC Document Number: 75486 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ260EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Dynamic b Turn-on delay Rise time c time c Turn-off delay time c Fall time c td(on) tr td(off) tf VDD = 30 V, RL = 20 , ID 1.5 A, VGEN = 10 V, Rg = 1 N-Ch 1 - 10 15 VDD = 30 V, RL = 10 , ID 3 A, VGEN = 10 V, Rg = 1 N-Ch 2 - 14 25 VDD = 30 V, RL = 20 , ID 1.5 A, VGEN = 10 V, Rg = 1 N-Ch 1 - 2 5 VDD = 30 V, RL = 10 , ID 3 A, VGEN = 10 V, Rg = 1 N-Ch 2 - 3 5 VDD = 30 V, RL = 20 , ID 1.5 A, VGEN = 10 V, Rg = 1 N-Ch 1 - 18 30 VDD = 30 V, RL = 10 , ID 3 A, VGEN = 10 V, Rg = 1 N-Ch 2 - 26 40 VDD = 30 V, RL = 20 , ID 1.5 A, VGEN = 10 V, Rg = 1 N-Ch 1 - 10 15 VDD = 30 V, RL = 10 , ID 3 A, VGEN = 10 V, Rg = 1 N-Ch 2 - 11 18 N-Ch 1 - - 60 N-Ch 2 - - 86 ns Source-Drain Diode Ratings and Characteristics b Pulsed current a ISM Forward voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time Body diode peak reverse recovery current tb IRM(REC) IF = 6 A, VGS = 0 V N-Ch 1 - 0.83 1.2 IF = 10 A, VGS = 0 V N-Ch 2 - 0.82 1.2 IF = 4 A, di/dt = 100 A/s N-Ch 1 - 31 65 IF = 5 A, di/dt = 100 A/s N-Ch 2 - 47 100 IF = 4 A, di/dt = 100 A/s N-Ch 1 - 26 55 IF = 5 A, di/dt = 100 A/s N-Ch 2 - 55 110 IF = 4 A, di/dt = 100 A/s N-Ch 1 - 16 - IF = 5 A, di/dt = 100 A/s N-Ch 2 - 24 - IF = 4 A, di/dt = 100 A/s N-Ch 1 - 15 - IF = 5 A, di/dt = 100 A/s N-Ch 2 - 23 - IF = 4 A, di/dt = 100 A/s N-Ch 1 - -1.6 - IF = 5 A, di/dt = 100 A/s N-Ch 2 - -2.1 - A V ns nC ns A Notes a. Pulse test; pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-0664-Rev. A, 15-May-17 Document Number: 75486 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ260EP www.vishay.com Vishay Siliconix N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) Axis Title Axis Title 80 50 10000 10000 48 1st line 2nd line 2nd line ID - Drain Current (A) 1000 VGS = 4 V 32 100 16 40 TC = 25 C 1000 30 1st line 2nd line VGS = 10 V thru 5 V 64 2nd line gfs - Transconductance (S) TC = -55 C TC = 125 C 20 100 10 VGS = 3 V 0 0 10 0 2 4 6 8 10 10 0 3 6 ID - Drain Current (A) 2nd line Output Characteristics Transconductance Axis Title 15 Axis Title 1200 10000 10000 960 1st line 2nd line 42 TC = 25 C 28 100 14 Ciss 1000 720 1st line 2nd line 1000 2nd line C - Capacitance (pF) 56 2nd line ID - Drain Current (A) 12 VDS - Drain-to-Source Voltage (V) 2nd line 70 480 Coss 100 240 TC = 125 C Crss TC = -55 C 0 0 10 0 2 4 6 8 10 10 0 12 36 48 VDS - Drain-to-Source Voltage (V) 2nd line Transfer Characteristics Capacitance 10 1000 1st line 2nd line 0.06 VGS = 4.5 V 100 0.02 VGS = 10 V 0.00 10 10 20 30 40 50 10000 ID = 1.5 A VDS = 30 V 8 1000 6 1st line 2nd line 0.08 2nd line VGS - Gate-to-Source Voltage (V) 10000 0.04 4 100 2 0 10 0 3 6 9 12 ID - Drain Current (A) 2nd line Qg - Total Gate Charge (nC) 2nd line On-Resistance vs. Drain Current Gate Charge S17-0664-Rev. A, 15-May-17 60 Axis Title Axis Title 0 24 VGS - Gate-to-Source Voltage (V) 2nd line 0.10 2nd line RDS(on) - On-Resistance () 9 15 Document Number: 75486 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ260EP www.vishay.com Vishay Siliconix N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) Axis Title Axis Title 0.10 TJ = 150 C 1000 1 1st line 2nd line 2nd line IS - Source Current (A) 10 TJ = 25 C 0.1 100 0.01 2nd line RDS(on) - On-Resistance () 10000 10000 0.08 1000 0.06 1st line 2nd line 100 0.04 TJ = 150 C 100 0.02 TJ = 25 C 0.001 0.00 10 0.2 0.4 0.6 0.8 1.0 10 0 1.2 2 4 Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title 75 1st line 2nd line ID = 5 mA -0.4 100 -0.7 ID = 250 A -1.0 0 25 50 ID = 1 mA 73 1000 71 69 100 67 65 10 -50 -25 10000 1st line 2nd line 1000 -0.1 2nd line VDS - Drain-to-Source Voltage (V) 10000 0.2 2nd line VGS(th) Variance (V) 10 VGS - Gate-to-Source Voltage (V) 2nd line Axis Title 75 100 125 150 175 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Temperature (C) 2nd line TJ - Junction Temperature (C) 2nd line Threshold Voltage Drain Source Breakdown vs. Junction Temperature Axis Title Axis Title 2.0 1000 10000 10000 IDM limited VGS = 10 V ID = 4A 1000 1.4 VGS = 4.5 V 1.1 100 2nd line ID - Drain Current (A) 100 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 8 VSD - Source-to-Drain Voltage (V) 2nd line 0.5 1.7 6 1000 100 s 10 ID limited 1 ms 10 ms 100 100 ms, 1 s, 10 s, DC 1 Limited by RDS(on) (1) 1st line 2nd line 0 0.1 0.8 TC = 25 C Single pulse 0.5 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (C) 2nd line On-Resistance vs. Junction Temperature S17-0664-Rev. A, 15-May-17 0.01 0.01 (1) 0.1 BVDSS limited 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Document Number: 75486 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ260EP www.vishay.com Vishay Siliconix N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 2 1 Duty cycle = 0.5 0.2 Notes: 0.1 0.1 P DM 0.05 t1 t2 t1 1. Duty cycle, D = t2 2. Per unit base = R thJA = 85 C/W 0.02 3. TJM - TA = PDM ZthJA(t) 4. Surface mounted Single pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 1 Duty cycle = 0.5 1000 0.2 1st line 2nd line Normalized Effective Transient Thermal Impedance 10000 0.1 0.1 100 0.05 0.02 Single pulse 0.01 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case Note * The characteristics shown in the graph: - Normalized Transient Thermal Impedance Junction-to-Ambient (25 C) is given for general guidelines only to enable the user to get a "ball park" indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions S17-0664-Rev. A, 15-May-17 Document Number: 75486 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ260EP www.vishay.com Vishay Siliconix N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) Axis Title Axis Title 100 100 10000 10000 1000 60 40 100 20 VGS = 3 V 0 2 4 6 8 1000 60 TC = 125 C 40 100 20 0 10 10 10 0 6 12 VDS - Drain-to-Source Voltage (V) 2nd line ID - Drain Current (A) 2nd line Output Characteristics Transconductance Axis Title 10000 1000 48 TC = 25 C 32 100 2nd line C - Capacitance (pF) 2000 1st line 2nd line 2nd line ID - Drain Current (A) 64 Ciss 1000 1500 Coss 1000 100 500 TC = 125 C Crss TC = -55 C 0 0 10 2 4 6 8 10 10 0 12 36 48 VDS - Drain-to-Source Voltage (V) 2nd line Transfer Characteristics Capacitance 10 1000 1st line 2nd line 0.015 VGS = 4.5 V 0.010 100 VGS = 10 V 0.000 10 16 32 48 64 80 10000 ID = 3 A VDS = 30 V 8 1000 6 1st line 2nd line 0.020 2nd line VGS - Gate-to-Source Voltage (V) 10000 0.005 4 100 2 0 10 0 6 12 18 24 ID - Drain Current (A) 2nd line Qg - Total Gate Charge (nC) 2nd line On-Resistance vs. Drain Current Gate Charge S17-0664-Rev. A, 15-May-17 60 Axis Title Axis Title 2nd line RDS(on) - On-Resistance () 24 VGS - Gate-to-Source Voltage (V) 2nd line 0.025 0 30 2500 10000 0 24 Axis Title 80 16 18 1st line 2nd line 0 TC = 25 C 80 1st line 2nd line VGS = 10 V thru 4 V 1st line 2nd line 2nd line ID - Drain Current (A) 80 2nd line gfs - Transconductance (S) TC = -55 C 30 Document Number: 75486 7 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ260EP www.vishay.com Vishay Siliconix N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) Axis Title Axis Title 0.05 TJ = 150 C 1000 1 1st line 2nd line 2nd line IS - Source Current (A) 10 0.1 100 TJ = 25 C 0.01 2nd line RDS(on) - On-Resistance () 10000 10000 0.04 1000 0.03 1st line 2nd line 100 0.02 100 TJ = 150 C 0.01 TJ = 25 C 0.001 0.00 10 0 0.2 0.4 0.6 0.8 1.0 10 0 1.2 2 4 10 VGS - Gate-to-Source Voltage (V) 2nd line Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 75 -0.5 100 -0.8 ID = 250 A -1.1 0 25 50 ID = 1 mA 73 1000 71 69 100 67 65 10 -50 -25 10000 1st line 2nd line 1000 1st line 2nd line ID = 5 mA -0.2 2nd line VDS - Drain-to-Source Voltage (V) 10000 0.1 75 100 125 150 175 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Temperature (C) 2nd line TJ - Junction Temperature (C) 2nd line Threshold Voltage Drain Source Breakdown vs. Junction Temperature Axis Title Axis Title 2.0 1000 10000 ID = 8 A 10000 IDM limited VGS = 10 V 100 1000 1st line 2nd line 1.4 VGS = 4.5 V 1.1 100 2nd line ID - Drain Current (A) 1.7 100 s 1000 10 1 ms 10 ms 100 ms, 1 s, 10 s, DC 100 1 Limited by RDS(on) (1) 1st line 2nd line 2nd line VGS(th) Variance (V) 8 VSD - Source-to-Drain Voltage (V) 2nd line 0.4 2nd line RDS(on) - On-Resistance (Normalized) 6 0.1 0.8 TC = 25 C Single pulse 0.5 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (C) 2nd line On-Resistance vs. Junction Temperature S17-0664-Rev. A, 15-May-17 0.01 0.01 (1) 0.1 BVDSS limited 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Document Number: 75486 8 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ260EP www.vishay.com Vishay Siliconix N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 2 1 Duty cycle = 0.5 0.2 Notes: 0.1 P DM 0.1 0.05 t1 t2 1. Duty cycle, D = t1 t2 2. Per unit base = R thJA = 85 C/W 0.02 3. TJM - TA = PDM ZthJA(t) Single pulse 4. Surface mounted 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 1 Duty cycle = 0.5 1000 0.2 0.1 1st line 2nd line Normalized Effective Transient Thermal Impedance 10000 0.1 100 0.05 0.02 Single pulse 0.01 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case Note * The characteristics shown in the graph: - Normalized Transient Thermal Impedance Junction-to-Ambient (25 C) is given for general guidelines only to enable the user to get a "ball park" indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?75486. S17-0664-Rev. A, 15-May-17 Document Number: 75486 9 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. (c) 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2019 1 Document Number: 91000