CLY35 HiRel C-Band GaAs Power-MESFET * HiRel Discrete and Microwave Semiconductor * For professional power amplifiers * For frequencies from 100 MHz to 4.5 GHz * Hermetically sealed microwave power package * Low thermal resistance for high voltage application * Power added efficiency > 53 % * Space Qualification Expected 1998 ESA/SCC Detail Spec. No.: 5614/008, Type Variant No.s 04 to 06 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type CLY35-00 (ql) Marking - Ordering Code see below Pin Configuration 1 2 3 G S D Package MWP-35 CLY35-05 (ql) CLY35-10 (ql) CLY35-nn: specifies output power level (see electrical characteristics) (ql) Quality Level: P: Professional Quality, Ordering Code: Q62702L113 H: High Rel Quality, Ordering Code: on request S: Space Quality, Ordering Code: on request ES: ESA Space Quality, Ordering Code: Q62702L112 (see order instructions for ordering example) Semiconductor Group 1 of 9 Draft D, September 99 CLY35 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 14 V Drain-gate voltage VDG 16 V Gate-source voltage VGS -6 V Drain current ID 2.8 A Gate forward current IG 16 mA Compression Level 1) Operation Range 1 PC 1.5 at VDS 9 V dB 2.5 at VDS 8 V 3.5 at VDS 7 V Compression Level 2) Operation Range 2 PC 3.5 at VDS 7 V dB Compression Level 3) Operation Range 3 PC tbd. dB Junction temperature TJ 175 C Storage temperature range Tstg - 65...+ 175 C Total power dissipation 4) Ptot 18 W Tsol 230 C Rth JS 7.5 K/W Soldering temperature 5) Thermal Resistance Junction-soldering point Notes.: 1) Operation Range 1: 480 mA ID 960 mA 2) Operation Range 2: ID > 960 mA 3) Operation Range 3: ID < 480 mA 4) At TS = + 40 C. For TS > + 40 C derating is required. 5) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have elapsed. Semiconductor Group 2 of 9 Draft D, September 99 CLY35 Electrical Characteristics (at TA=25C; unless otherwise specified) Parameter Symbol Values Unit min. typ. max. IDss 1.2 2.0 2.8 A -VGth 1.6 2.6 3.6 V IDp3 - - 200 A -IGp3 - - 80 A IDp12 - - 4000 A -IGp12 - - 1600 A gm 600 730 - mS Rth JS - 6.8 - K/W DC Characteristics Drain-source saturation current VDS = 2 V, VGS = 0 V Gate threshold voltage VDS = 3 V, ID = 80 mA Drain current at pinch-off, low VDS VDS = 3 V, VGS = -3.8 V Gate current at pinch-off, low VDS VDS = 3 V, VGS = -3.8 V Drain current at pinch-off, high VDS VDS = 12 V, VGS = -4 V Gate current at pinch-off, high VDS VDS = 12 V, VGS = -4 V Transconductance VDS = 3 V, ID = 720 mA Thermal resistance junction to soldering point VDS = 9 V, ID = 720 mA, Ts = +25C Semiconductor Group 3 of 9 Draft D, September 99 CLY35 Electrical Characteristics (continued) Parameter Symbol Values min. typ. Unit max. AC Characteristics Linear power gain 1) dB Glp VDS = 9 V, ID = 720 mA, f = 2.3 GHz, Pin = 0 dBm CLY35-00 10.0 11.0 - CLY35-05 10.5 11.2 - CLY35-10 10.5 11.2 - Output power at 1dB gain compr. 1) P1dB dBm VDS = 9 V, ID(RF off) = 720 mA, f = 2.3 GHz CLY35-00 34.5 34.8 - CLY35-05 35 35.3 - CLY35-10 35.5 35.8 - Output power 1) dBm Pout VDS = 9 V, ID(RF off) = 720 mA, f = 2.3 GHz, Pin = 25 dBm CLY35-00 - 34.8 - CLY35-05 - 35.3 - CLY35-10 - 35.8 - Power added efficiency 1), 2) PAE % VDS = 9 V, ID(RF off) = 720 mA, f = 2.3 GHz, @ 1dB gain compression CLY35-00 40 47 - CLY35-05 45 50 - CLY35-10 45 53 - Notes.: 1) RF Power characteristics given for power matching conditions 2) Power added efficiency: PAE = (PRFout - PRFin) / PDC Semiconductor Group 4 of 9 Draft D, September 99 CLY35 Typical Common Source S-Parameters V DS = 3 V, I D = 720 mA, Z o = 50 f |S11| 35.5 dBm) in ESA Space Quality Level Further Informations: See our WWW-Pages: - Discrete and RF-Semiconductors (Small Signal Semiconductors) www.infineon.com/products/discrete/hirel.htm - HiRel Discrete and Microwave Semiconductors www.infineon.com/products/discrete/hirel.htm Please contact also our marketing division : Tel.: Fax.: e-mail: Address: Semiconductor Group ++89 234 24480 ++89 234 28438 martin.wimmers@infineon.com Infineon Technologies Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich 8 of 9 Draft D, September 99 CLY35 MWP-35 Package Published by Infineon Technologies Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich. Infineon Technologies AG 1998. All Rights Reserved. As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Infineon Technologies Companies and Representatives woldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Infineon Technologies Office, Semiconductor Group. Infineon Technologies Semiconductors is a certified CECC and QS9000 manufacturer (this includes ISO 9000). Semiconductor Group 9 of 9 Draft D, September 99