GHR16-E3/73 - Vishay [General Semiconductor]

Document Number: 88618 For technical questions within your region, please contact one of the following: www.vishay.com

Revision: 10-Nov-09 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1

Photoflash Rectifier

GHR16

Vishay General Semiconductor

FEATURES

• Glass passivated chip junction

• Fast switching for high efficiency

• Low leakage current

• High forward surge capability

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Compliant to RoHS directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in high voltage rectification of photoflash

application.

MECHANICAL DATA

Case: R-1

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

Polarity: Color band denotes cathode end

PRIMARY CHARACTERISTICS

IF(AV) 0.5 A

VRRM 1600 V

IFSM 20 A

VF1.5 V

trr 300 ns

TJ max. 175 °C

R-1

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL VALUE UNIT

Maximum repetitive peak reverse voltage VRRM 1600 V

Maximum RMS voltage VRMS 1120 V

Maximum DC blocking voltage VDC 1600 V

Maximum average forward rectified current

0.375" (9.5 mm) lead length at TA = 55 °C lF(AV) 0.5 A

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load IFSM 20 A

Maximum full load reverse current, full cycle average,

0.375" (9.5 mm) lead length at TL = 55 °C IR(AV) 100 μA

Operating junction and storage temperature range TJ, TSTG - 65 to + 175 °C

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT

Maximum instantaneous

forward voltage drop 0.5 A VF1.5 V

Maximum DC reverse current

at rated DC blocking voltage TA = 25 °C IR5.0 μA

Maximum reverse

recovery time

IF = 0.5 A, IR = 1.0 A,

Irr = 0.25 A trr 300 ns

Typical junction capacitance 4.0 V, 1 MHz CJ10 pF

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88618

2DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 10-Nov-09

GHR16

Vishay General Semiconductor

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 °C unless otherwise noted)

Fig. 1 - Maximum Forward Current Derating Curve

Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 4 - Typical Junction Capacitance

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE

GHR16-E3/54 0.2 54 5500 13" diameter paper tape and reel

GHR16-E3/73 0.2 73 3000 Ammo pack packaging

Ambient Temperature (°C)

Average Forward Rectied Current (A)

0.75

1.00

25 50 75 100 125 150 175

0.50

0.25

Resistive or Inductive Load

0.375" (9.5 mm) Lead Length

Single Phase Half Wave 60 Hz

1 10010

Peak Forward Surge Current (A)

Number of Cycles at 60 Hz

1.0 Cycle

TJ = TJ Max.

8.3 ms Single Half Sine-Wave

0.4 0.6 0.8 1.0 1.2 1.4 1.6

Instantaneous Forward Voltage (V)

0.01

0.1

Instantaneous Forward Current (A)

= 25 °C

Pulse Width = 300 μs

1 % Duty Cycle

Reverse Voltage (V)

Junction Capacitance (pF)

0.1 10 100

100

TJ = 25 °C

f = 1.0 MHz

Vsig = 50 mVp-p

Document Number: 88618 For technical questions within your region, please contact one of the following: www.vishay.com

Revision: 10-Nov-09 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3

GHR16

Vishay General Semiconductor

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

Case Style R-1

0.025 (0.65)

0.021 (0.55)

DIA.

0.102 (2.6)

0.091 (2.3)

DIA.

0.787 (20.0)

MIN.

0.787 (20.0)

MIN.

0.126 (3.2)

0.106 (2.7)

Legal Disclaimer Notice

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Revision: 12-Mar-12 1Document Number: 91000

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