HEXFET® Power MOSFET
lAdavanced Process Technology
lUltra Low On-Resistance
lDual N-Channel MOSFET
lSurface Mount
lAvailable in Tape & Reel
lDynamic dv/dt Rating
lFast Switching
lLead-Free
Description
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
dual-die capability making it ideal in a variety of power
applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
IRF7103IPbF
D
1
D
1
D
2
D
2
G
1
S
2
G
2
S1
Top View
8
1
2
3
45
6
7
VDSS = 50V
RDS(on) = 0.130Ω
ID = 3.0A
07/07/06
Absolute Maximum Ratings
Thermal Resistance Ratings
SO-8
www.irf.com 1
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 3.0
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 2.3
IDM Pulsed Drain Current 10
PD @TC = 25°C Power Dissipation 2.0
Linear Derating Factor 0.016 W/°C
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt 4.5 V/nS
TJ, TSTG Junction and Storage Temperature Range -55 to + 150
A
W
°C
Parameter Min. Typ. Max. Units
RθJA Maximum Junction-to-Ambient   62.5 °C/W
PD -96085
IRF7103IPbF
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Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 50   V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient  0.049  V/°C Reference to 25°C, ID = 1mA
 0.11 0.13 VGS = 10V, ID = 3.0A
 0.16 0.20 VGS = 4.5V, ID = 1.5A
VGS(th) Gate Threshold Voltage 1.0  3.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance  3.8  S VDS = 15V, ID = 3.0A
  2.0 VDS = 40V, VGS = 0V
  25 VDS = 40V, VGS = 0V, TJ = 55 °C
Gate-to-Source Forward Leakage   100 VGS = 20V
Gate-to-Source Reverse Leakage   -100 VGS = - 20V
QgTotal Gate Charge  12 30 ID = 2.0A
Qgs Gate-to-Source Charge  1.2  nC VDS = 25V
Qgd Gate-to-Drain ("Miller") Charge  3.5  VGS = 10V
td(on) Turn-On Delay Time  9.0 20 VDD = 25V
trRise Time  8.0 20 ID = 1.0A
td(off) Turn-Off Delay Time  45 70 RG = 6.0Ω
tfFall Time  25 50 RD = 25Ω
Between lead,6mm(0.25in.)
from package and center
of die contact
Ciss Input Capacitance  290  VGS = 0V
Coss Output Capacitance  140  pF VDS = 25V
Crss Reverse Transfer Capacitance  37  = 1.0MHz
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage   1.2 V TJ = 25°C, IS = 1.5A, VGS = 0V
trr Reverse Recovery Time  70 100 ns TJ = 25°C, IF = 1.5A
Qrr Reverse RecoveryCharge  110 170 nC di/dt = 100A/µs
ton Forward Turn-On Time
Source-Drain Ratings and Characteristics
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
  12
  2.0
A
S
D
G
IGSS
IDSS Drain-to-Source Leakage Current
LSInternal Source Inductance  6.0 
LDInternal Drain Inductance  4.0 
nH
ns
nA
µA
Ω
RDS(ON) Static Drain-to-Source On-Resistance
S
D
G
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
ISD ≤ 1.8A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 10sec.
IRF7103IPbF
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IRF7103IPbF
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C,
IRF7103IPbF
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Fig 10a. Switching Time Test Circuit
+
-
V
DS
9
0%
1
0%
V
GS t
d(on)
t
r
t
d(off)
t
f
VDS
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10b. Switching Time Waveforms
RD
VGS
VDD
RG
D.U.T.
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.1
1
10
100
0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Du ty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , R ect angular Pulse D ur at ion (se c)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRF7103IPbF
6www.irf.com
Fig 12a. Basic Gate Charge Waveform Fig 12b. Gate Charge Test Circuit
D.U.T. V
D
S
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
QG
QGS QGD
V
G
Charge
10V
IRF7103IPbF
www.irf.com 7
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
R
e-Applied
V
oltage
Reverse
Recovery
Current Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P.W.
Period
+
+
+
-
-
-
Fig 13. For N-Channel HEXFETS
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
RG
VDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
IRF7103IPbF
8www.irf.com
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
SO-8 Part Marking Information
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IRF7103IPbF
www.irf.com 9
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/2006
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. O UT LIN E C ONFORMS TO EIA-481 & EIA-541.
FE ED DIRE CT ION
T ERMINAL NU MBE R 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
N
OTES:
1
. CONTROLLING DIMENSION : MILLIMETER.
2
. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3
. OUTLINE CONFORMS TO EIA-48 1 & EIA-541.
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)