2005-10-13
BFG135A
1
NPN Silicon RF Transistor*
For low-distortion broadband output amplifier
stages in antenna and telecommunication
systems up to 2 GHz at collector currents from
70 mA to 130 mA
Power amplifiers for DECT and PCN systems
Integrated emitter ballast resistor
fT = 6 GHz
* Short term description
123
4
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFG135A BFG135
A
1=E 2=B 3=E 4=C - - SOT223
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 15 V
Collector-emitter voltage VCES 25
Collector-base voltage VCBO 25
Emitter-base voltage VEBO 2
Collector current IC150 mA
Base current IB20
Total power dissipation1)
TS 100°C Ptot 1 W
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point2) RthJS 50 K/W
1 TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
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Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0 V(BR)CEO 15 - - V
Collector-emitter cutoff current
VCE = 25 V, VBE = 0 ICES - - 100 µA
Collector-base cutoff current
VCB = 10 V, IE = 0 ICBO - - 50 nA
Emitter-base cutoff current
VEB = 1 V, IC = 0 IEBO - - 1 µA
DC current gain-
IC = 100 mA, VCE = 8 V, pulse measured hFE 80 120 160 -
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Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 100 mA, VCE = 8 V, f = 200 MHz fT4.5 6 - GHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb - 1.1 1.5 pF
Collector emitter capacitance
VCE = 10 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce - 0.8 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb - 7 -
Noise figure
IC = 30 mA, VCE = 8 V, ZS = ZSopt,
f = 900 MHz
f = 1.8 GHz
F
-
-
1.5
2.6
-
-
dB
Power gain, maximum available1)
IC = 100 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt,
f = 900 MHz
f = 1.8 GHz
Gma
-
-
14
9
-
-
Transducer gain
IC = 100 mA, VCE = 8 V, ZS = ZL = 50,
f = 900 MHz
f = 1.8 GHz
|S21e|2
-
-
10.5
4.5
-
-
dB
Third order intercept point at output
VCE = 8 V, IC = 100 mA, f = 900 MHz,
ZS = ZL = 50
IP3- 33 - dBm
1Gma = |S21/S12| (k-(k2-1)1/2)
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Total power dissipation Ptot = ƒ(TS)
0 20 40 60 80 100 120 °C 150
TS
0
100
200
300
400
500
600
700
800
900
1000
mW
1200
Ptot
Permissible Pulse Load RthJS = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
-
Ptotmax/PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
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Package SOT223
Package Outline
Foot Print
Marking Layout
Packing
Reel ø180 mm = 1.000 Pieces/Reel
Reel ø330 mm = 4.000 Pieces/Reel
Manufacturer
Date code
(Year/Calendarweek)
Type code
Example
2005, June
BCP52-16
Pin 1
123
3
4
±0.1
±0.04
0.5 MIN.
0.28
0.1 MAX.
15˚ MAX.
6.5
±0.2
A
4.6
2.3
0.7
±0.1
0.25
M
A
1.6
±0.1
7±0.3
B0.25
M
±0.2
3.5
B
3.5
1.4 4.8 1.4
1.11.2
80.3 MAX.
6.8
7.55
12
1.75
Pin 1
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Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München
© Infineon Technologies AG 2005.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be
considered as a guarantee of characteristics.
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We hereby disclaim any and all warranties, including but not limited to warranties of
non-infringement, regarding circuits, descriptions and charts stated herein.
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For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.Infineon.com).
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