40
StaticGuard
AVX Multilayer Ceramic Transient Voltage Suppressors
ESD Protection for CMOS, Bi Polar and SiGe Based Systems
•Typical ESD failure voltage for CMOS and/or Bi Polar
is ≥ 200V.
•15kV ESD pulse (air discharge) per IEC 1000-4-2,
Level 4, generates < 20 millijoules of energy.
•Low capacitance (<200pF) is required for high-speed
data transmission.
•Low leakage current (IL) is necessary for battery
operated equipment.
GENERAL INFORMATION
Termination/Lead Finish Code
Packaging Code
StaticGuard
AVX Working Working Clamping Test Maximum Transient Peak Typical Case Elements
Part Number Voltage Voltage Voltage Current Leakage Energy Current Cap Size
(DC) (AC) For VCCurrent Rating Rating
VC04LC18V500 _ _ ≤18.0 ≤14.0 50 1 10 0.02 15 40 0402 1
VC06LC18X500 _ _ ≤18.0 ≤14.0 50 1 10 0.05 30 50 0603 1
VC08LC18A500 _ _ ≤18.0 ≤14.0 50 1 10 0.10 30 80 0805 1
VC12LC18A500 _ _ ≤18.0 ≤14.0 50 1 10 0.10 30 200 1206 1
VA10LC18A500 _ _ ≤18.0 ≤14.0 50 1 10 0.10 30 200 Axial 1
VW(DC) DC Working Voltage (V)
VW(AC) AC Working Voltage (V)
VCClamping Voltage (V @ IVC )
IVC Test Current for VC (A, 8x20μS)
ILMaximum Leakage Current at the Working Voltage (μA)
ETTransient Energy Rating (J, 10x1000μS)
IPPeak Current Rating (A, 8x20μS)
Cap Typical Capacitance (pF) @ frequency specified and 0.5 V
PART NUMBER IDENTIFICATION
V C 08 LC 18 A 500 R P
TERMINATION FINISH:
P = Ni/Sn Alloy (Plated)
PACKAGING (Pcs/Reel)
CLAMPING VOLTAGE
ENERGY RATING
WORKING VOLTAGE (0-18VDC)
LOW CAPACITANCE DESIGN
CASE SIZE DESIGNATOR
CASE STYLE
PRODUCT DESIGNATOR
V A 10 LC 18 A 500 R L
LEAD FINISH:
L = Copper Clad Steel,
Solder Coated
PACKAGING (Pcs/Reel)
CLAMPING VOLTAGE
ENERGY RATING
WORKING VOLTAGE (0-18VDC)
LOW CAPACITANCE DESIGN
CASE SIZE DESIGNATOR
CASE STYLE
PRODUCT DESIGNATOR
Chips Axials
Not RoHS Compliant
LEAD-FREE COMPATIBLE
COMPONENT
For RoHS compliant products,
please select correct termination style.
41
StaticGuard
AVX Multilayer Ceramic Transient Voltage Suppressors
ESD Protection for CMOS, Bi Polar and SiGe Based Systems
VC08LC18A500 Capacitance Histogram
14%
12%
10%
8%
6%
4%
2%
0%
14%
12%
10%
8%
6%
4%
2%
0%
Capacitance (pF)
Measured Data Calculated Distribution1MHz, 0.5VRMS
61 63 65 67 69 71 73 75 77 79 81 83 85 87 89
VC06LC18X500 Capacitance Histogram
30%
20%
25%
15%
5%
10%
0%
Capacitance (pF @ 1MHz & 0.5V)
Measured Data Calculated
45 50 55 60 65
VC06LC18X500
VC08LC18A500
VC12LC18A500
0
-10
-20
-30
-40
DB
0 500 1000 1500 2000 2500
Frequency (MHz)
50
45
40
35
301 10 100 1000 10000
Number of ESD Strikes
Clamping Voltage (V)
VC12LC18A500 VC08LC18A500
VC06LC18X500
StaticGuard ESD RESPONSE�
IEC 1000-4-2 (8 Kv Contact Discharge)
VI Curves - StaticGuard Products
100
80
60
40
20
0
10-9 10-6 10-3 10+0 10+3
Current (A)
Voltage (V)
06LC 08LC 12LC 10LC
VC12LC18A500 Capacitance Histogram
14%
12%
10%
8%
6%
4%
2%
0%
14%
12%
10%
8%
6%
4%
2%
0%
Capacitance (pF)
Measured Data Calculated Distribution1MHz, 0.5VRMS
161 163 165 167 169 171 173 175 177 179 181 183 185 187 189
StaticGuard S21
TYPICAL PERFORMANCE DATA
42
StaticGuard
AVX Multilayer Ceramic Transient Voltage Suppressors
Multilayer construction and improved grain structure result in
excellent transient clamping characteristics up to 20 amps
peak current, while maintaining very low leakage currents
under DC operating conditions. The VI curves below show the
voltage/current characteristics for the 5.6V, 9V, 14V, 18V and
low capacitance StaticGuard parts with currents ranging from
parts of a micro amp to tens of amps.
Traditionally varistors have suffered degradation of electrical
performance with repeated high current pulses resulting in
decreased breakdown voltage and increased leakage cur-
rent. It has been suggested that irregular intergranular
boundaries and bulk material result in restricted current
paths and other non-Schottky barrier paralleled conduction
paths in the ceramic. Repeated pulsing of TransGuard®tran-
sient voltage suppressors with 150Amp peak 8 x 20μS
waveforms shows negligible degradation in breakdown
voltage and minimal increases in leakage current. This
does not mean that TransGuard®suppressors do not suffer
degradation, but it occurs at much higher current.
TYPICAL PERFORMANCE CURVES (0402 CHIP SIZE)
VOLTAGE/CURRENT CHARACTERISTICS PULSE DEGRADATION
VC04LC18V500
VC040214X300
VC040218X400
VC040205X150
VC040209X200
100
80
60
40
20
0
10-9 10-7 10-5 10-3 10-1 10 103105
Current (A)
Voltage (V)
VC04LC18V500
VC040214X300
VC040218X400
VC040205X150
VC040209X200
10 100 1000 10000
8kV ESD STRIKES
BREAKDOWN VOLTAGE (Vb)
35
30
25
20
15
10
5
VC040205X
VC04LC18V
VC040214X
VC040218X
VC040209X
0
-5
-10
-15
-20
-25
0.01 0.1 1 10
Frequency (GHz)
dB
VC04LC18V500
VC040214X300
VC040218X400
VC040205X150
VC040209X200
1300
1200
10 100 1000
IMPULSE DURATION (μS)
PEAK POWER (W)
1100
1000
900
800
700
600
500
400
300
200
100
0
PEAK POWER VS PULSE DURATION
INSERTION LOSS CHARACTERISTICS
ESD TEST OF 0402 PARTS
