1
105 A
NEW ADD-A-pakTM Power Modules
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTO R
IRK.105 SERIES
Bulletin I27133 rev. D 09/97
www.irf.com
Parameters IRK.105 Units
IT(AV) or IF(AV)
@ 85°C
IO(RMS)
(*) 235 A
ITSM @ 50Hz 1785 A
IFSM @ 60Hz 1870 A
I2t @ 50Hz 15.91 KA2s
@ 60Hz 14.52 KA2s
I2√t 159.1 KA2√s
VRRM
range 400 to 1600 V
TSTG - 40 to 150 o
C
TJ- 40 to130 o
C
(*) As AC switch.
These IRK series of NEW ADD-A-paks use power
diodes and thyristors in a variety of circuit configu-
rations. The semiconductor chips are electrically
isolated from the base plate, allowing common
heatsinks and compact assemblies to be built.
They can be interconnected to form single phase or
three phase bridges or AC controllers. These
modules are intended for general purpose high
voltage applications such as high voltage regulated
power supplies, lighting circuits, and temperature
and motor speed control circuits.
105 A
Major Ratings and Characteristics
Features
Electrically isolated: DBC base plate
3500 VRMS isolating voltage
Standard JEDEC package
Simplified mechanical designs, rapid assembly
Auxiliary cathode terminals for wiring convenience
High surge capability
Wide choice of circuit configurations
Large creepage distances
UL E78996 approved
Description
IRK.105 Series
2
Bulletin I27133 rev. D 09/97
www.irf.com
IT(AV) Max. average on-state
current (Thyristors) 180 o conduction, half sine wave,
IF(AV) Max. average forward T C = 85oC
current (Diodes)
IO(RMS)Max. continuous RMS
on-state current.
As AC switch
ITSM Max. peak, one cycle 1785 t=10ms No voltage
or non-repetitive on-state 1870 t=8.3ms reapplied
IFSM or forward current 1500 t=10ms 100% VRRM
1570 t=8.3ms reapplied
2000 t=10ms TJ = 25oC,
2100 t=8.3ms no voltage reapplied
I2t Max. I2t for fusing 15.91 t=10ms No voltage
14.52 t=8.3ms reapplied
11.25 t=10ms 100% VRRM
10.27 t=8.3ms reapplied
20.00 t=10ms TJ = 25oC,
18.30 t=8.3ms no voltage reapplied
I2√t Max. I2√t for fusing (1) 159.1 K A2√s t= 0.1 to 10ms, no voltage reappl. TJ =TJ
max
VT(TO) Max. value of threshold 0.80 Low level(3 )
voltage (2) 0.85 High level (4)
rtMax. value of on-state 2.37 Low level(3)
slope resistance (2) 2.25 High level (4)
VTM Max. peak on-state or I TM = π x IT(AV)
VFM forward voltage IFM = π x IF(AV)
di/dt Max. non-repetitive rate T J = 25oC, from 0.67 VDRM,
of rise of turned on 150 A/µs ITM =π x IT(AV), Ig
= 500mA,
current tr < 0.5 µs, tp > 6 µs
IHMax. holding current 200 T J = 25oC, anode supply = 6V,
m A resistive load, gate open circuit
ILMax. latching current 400 T J = 25oC, anode supply = 6V, resistive load
Parameters IRK.105 Units Conditions
235
On-state Conduction
Initial TJ = TJ max.
A
KA2s
V
mΩ
1.64 V
or
I(RMS) I(RMS)
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
VRRM , maximum VRSM , maximum VDRM , max. repetitive I RRM
Voltage repetitive non-repetitive peak off-state voltage, IDRM
Code peak reverse voltage peak reverse voltage gate open circuit 130°C
-VVVmA
04 400 500 400
06 600 700 600
08 800 900 800
IRK.105 10 1000 1100 1000 20
12 1200 1300 1200
14 1400 1500 1400
16 1600 1700 1600
Sinusoidal
half wave,
Initial TJ = T J max.
105
TJ = TJ max
TJ = TJ max
TJ = 25°C
(1) I2t for time tx = I2√t x √tx(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2(3) 16.7% x π x IAV < I < π x IAV
(4) I > π x IAV
IRK.105 Series
3
Bulletin I27133 rev. D 09/97
www.irf.com
TJJunction operating
temperature range
Tstg Storage temp. range - 40 to 150
RthJC Max. internal thermal
resistance, junction 0.135 Per module, DC operation
to case
RthCS Typical thermal resistance
case to heatsink
T Mounting torque ± 10%
to heatsink
busbar 3
w t Approximate weight 83 (3) g (oz)
Case style TO-240AA JEDEC
Thermal and Mechanical Specifications
Parameters IRK.105 Units Conditions
- 40 to 130
0.1
5
(5) Available with dv/dt = 1000V / µs, to complete code add S90 i.e. IRKT105/16 S90.
°C
K/W
Nm
Mounting surface flat, smooth and greased.
Flatness < 0.03 mm; roughness < 0.02 mm
IRRM Max. peak reverse and
IDRM off-state leakage current 20 mA TJ = 130oC, gate open circuit
at VRRM, VDRM
VINS RMS isolation voltage 2500 (1 min) 50 Hz, circuit to base, all terminals
3500 (1 sec) shorted
dv/dt Max. critical rate of rise TJ = 130oC, linear to 0.67 VDRM,
of off-state voltage (5) gate open circuit
500 V/µs
Triggering
Blocking
V
PGM Max. peak gate power 12
PG(AV) Max. average gate power 3
IGM Max. peak gate current 3 A
-VGM Max. peak negative
gate voltage
VGT Max. gate voltage 4.0 TJ = - 40°C
required to trigger 2.5 TJ = 25°C
1.7 TJ = 125°C
IGT Max. gate current 270 TJ = - 40°C
required to trigger 150 mA TJ = 25°C
80 TJ = 125°C
VGD Max. gate voltage
that will not trigger
IGD Max. gate current
that will not trigger
0.25 V
6mA
Anode supply = 6V
resistive load
Anode supply = 6V
resistive load
W
V
10
TJ = 125oC,
rated VDRM applied
TJ = 125oC,
rated VDRM applied
Parameters IRK. 105 Units Conditions
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound
Parameters IRK.105 Units Conditions
IRK.105 Series
4
Bulletin I27133 rev. D 09/97
www.irf.com
Outlines Table
IRKT105/.. (*)
IRKL105/.. (*)
IRKH105/.. (*)
(*) For terminals connections, see Circuit configurations Table
All dimensions in millimeters (inches)
30 ± 0.5
(1.18 ± 0.02)
29 ± 0.5
(1.13 ± 0.02)
6. 1 ± 0.3
(0.24 ± 0.01) 24 ± 0.5
18 REF.
(0.71) 15.5 ± 0.5
(0.61 ± 0.02)
30 ± 0.1
(1.18 ± 0.04)
Faston tab. 2. 8 x 0. 8
20.5 ± 0.75
(0.81 ± 0.03)
15 ± 0. 5
(0.59 ± 0.02)
20 ± 0.5
(0.79 ± 0.02)
(0.16 ± 0.01)
4
Pitch 4.0 ± 0. 2
(0.25 ± 0.01)
6. 3 ± 0.3
5
2
3
80 ± 0.3
(3.15 ± 0.01)
(3 .62 ± 0.02)
92 ± 0.5
20 ± 0.5
Sc rews M 5 x 0.8
(0.11 x 0. 03)
(0.94 ± 0. 02)
(0.79 ± 0.02)
1
30 ± 0 .5
( 1.18 ± 0.02)
29 ± 0. 5
(1.13 ± 0. 02)
6. 1 ± 0.3
(0.24 ± 0.01) 24 ± 0.5
18 REF.
(0.71) 15.5 ± 0.5
(0.61 ± 0.02)
30 ± 0.1
( 1.1 8 ± 0. 04)
Faston tab. 2.8 x 0.8
20.5 ± 0.75
(0.81 ± 0. 03)
15 ± 0.5
(0.59 ± 0.02)
20 ± 0.5
(0.79 ± 0.02)
5.8 ± 0.25
(0.16 ± 0. 01)
4
Pitc h 4.0 ± 0. 2
(0.23 ± 0.01)
(0.25 ± 0.01)
6.3 ± 0.3
576
2
3
80 ± 0.3
(3.15 ± 0.01)
(3.62 ± 0.02)
92 ± 0.5
20 ± 0.5
Screws M5 x 0.8
(0.11 x 0.03)
(0.94 ± 0.02 )
(0.79 ± 0.02)
1
30 ± 0.5
(1.18 ± 0.02)
29 ± 0.5
(1.13 ± 0.02)
6.1 ± 0.3
(0.24 ± 0.01) 24 ± 0.5
18 REF.
(0.71) 15.5 ± 0.5
(0.61 ± 0.02)
30 ± 0.1
(1.18 ± 0. 04)
Faston tab. 2.8 x 0.8
20.5 ± 0.75
(0.81 ± 0.03)
15 ± 0.5
(0.59 ± 0.02)
20 ± 0.5
(0.79 ± 0.02)
(0.16 ± 0.01)
Pitch 4.0 ± 0.2
(0.25 ± 0.01)
6.3 ± 0.3
76
2
3
80 ± 0.3
(3.15 ± 0.01)
(3.62 ± 0.02)
92 ± 0.5
20 ± 0.5
Screws M5 x 0.8
(0.11 x 0.03)
(0.94 ± 0.02)
(0.79 ± 0.02)
1
NOTE: To order the Optional Hardware see Bulletin I27900
Sine half wave conduction Rect. wave conduction
Devices Units
180o120o90o60o30o180o120o90o60o30o
IRK.105 0.04 0.05 0.06 0.08 0.12 0.03 0.05 0.06 0.08 0.12 °C/W
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance R thJC when devices operate at different conduction angles than DC)
IRK.105 Series
5
Bulletin I27133 rev. D 09/97
www.irf.com
IRK T 105 / 16 S90
Device Code
1 2 345
1- Module type
2- Circuit configuration (See Circuit Configuration table)
3- Current code * *
4- Voltage code (See Voltage Ratings table)
5- dv/dt code: S90 = dv/dt 1000 V/µs
No letter = dv/dt 500 Vµs
IRK.106 types
With no auxiliary cathode
* * Available with no auxiliary cathode.
To specify change: 105 to 106
e.g. : IRKT106/16 etc.
Ordering Information Table
Circuit Configurations Table
IRKT IRKH IRKL
64
13.8 (0.53)
+
K2 G2
-
K1G1
~
(1)
(2)
(3)
(4) (5) (7) (6)
+
-
K1
G1
~
(1)
(2)
(3)
(4) (5)
+
-
~
(1)
(2)
(3)
K2
(7)
G2
(6)
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
70
80
90
100
110
120
130
0 20 40 60 80 100 12
0
30°60° 90° 120° 180°
Average On-sta te Current (A )
Maximum Allowable Case Temperature (°C
)
Co n du c t ion Ang l e
IRK.105.. Series
R ( DC) = 0.2 7 K/W
thJC
70
80
90
100
110
120
130
0 2040608010012014016018
0
DC
30°60°
90°120° 180°
Average On-state Current (A)
Maximum Al lowabl e C ase Temperature (°C
)
Cond uc t ion P eriod
IR K. 105.. Seri es
R (DC) = 0 .27 K/W
thJC
IRK.105 Series
6
Bulletin I27133 rev. D 09/97
www.irf.com
Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-state Power Loss Characteristics
0
20
40
60
80
100
120
140
160
180
200
0 2040608010012014016018
0
DC
180°
120°
90°
60°
30°
RMS Limit
Conducti on Period
Max imum Average On-state P ower Loss (W
)
Average On-state Current (A)
IR K. 105.. Series
Per Junction
T = 130°C
J
0
20
40
60
80
100
120
140
160
0 204060801001
20
RMS Limi t
Ma xi mum Ave r age O n-sta te Power Loss (W
)
Ave ra ge On -s ta te Current (A)
180°
120°
90°
60°
30°
C onducti on Angle
IR K.105.. Se ri es
Per Jun cti on
T = 130°C
J
700
800
900
1000
1100
1200
1300
1400
1500
1600
110100
Number Of E qua l Am p li t u de Ha lf Cycle Current P u lses (N
)
Peak Half Sine Wave On-state Cu rrent (A)
I nitial T = 1 30°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
At Any Rated Load Condition And With
Rated V A pplied Following Surge.
RRM
IRK.105.. Series
Per Junction
600
800
1000
1200
1400
1600
1800
0.01 0.1
1
Peak Half Sin e Wave On-state Current (A)
Pulse Train Durati on (s)
M a xim u m Non Repetit ive Su r g e Curren
t
Versus Pul s e Trai n Dura tion. Con tro
l
Initial T = 13 0°C
No Voltage Reapplied
Rated V Reapplied
Of Con du ction May Not Be Maintain ed
.
J
RRM
IRK.105.. Series
Per J unc t io n
0 20 40 60 80 100 120 140
Maximum Allow able Ambient Temperature (°C
)
2 K/W
1 K/W
0.7 K/W
0.5 K/W
0.3 K/W
R = 0.1 K/W - Delta R
thSA
0.2 K/W
0
50
100
150
200
250
300
350
0 40 80 120 160 200 240
180°
120°
90°
60°
30°
To tal R MS Out put Cu r r e n t ( A)
Maxim u m To ta l On -s ta te Power L os s (W)
Cond uction Angle
IRK. 105. . Serie s
Pe r Mod ule
T = 130°C
J
IRK.105 Series
7
Bulletin I27133 rev. D 09/97
www.irf.com
Fig. 9 - On-state Power Loss Characteristics
Fig. 8 - On-state Power Loss Characteristics
Fig. 10 - On-state Voltage Drop Characteristics
0 20 40 60 80 100 120 140
Maxi mum Allowable Ambient Temperature (°C
)
0.5 K/W
0.3 K/W
R = 0.1 K/W - Delta R
thSA
0.2 K/W
0.7 K/W
1 K/W
2 K/W
0
100
200
300
400
500
600
0 40 80 120 160 200
T ota l Outpu t Cur r ent (A)
Maximum Total Power Loss (W)
180°
(Sine)
180°
(Rect)
2 x IR K.105. . Serie s
Single Phase Bridge
Connected
T = 130°C
J
0 20 40 60 80 100 120 140
Maxi mum All owable Ambi ent Temperature (°C
)
1 K/W
0.5 K/W
0.3 K/W
R = 0.1 K/W - Delta R
0.2 K/W
thSA
0
100
200
300
400
500
600
700
800
900
0 40 80 120 160 200 240 280
Total Output Curr e nt (A)
Maxi mum T ota l Po wer L os s (W)
120°
(Rect)
3 x IR K.105. . Series
Thr ee Phas e Brid ge
Connected
T = 130°C
J
1
10
100
1000
00.511.522.533
.5
T = 2 5°C
J
Instantan eous On-state Curre nt (A)
Instantaneous On-stat e Vol tage (V)
T = 130°C
J
IR K.105.. Series
Pe r Junction
IRK.105 Series
8
Bulletin I27133 rev. D 09/97
www.irf.com
Fig. 14- Gate Characteristics
Fig. 13 - Thermal Impedance ZthJC Characteristics
Fig. 11 - Recovery Charge Characteristics Fig. 12 - Recovery Current Characteristics
20
40
60
80
100
120
140
10 20 30 40 50 60 70 80 90 10
Maximum Re verse Recovery C urrent - Irr (A
Rate Of Fall Of Forward Current - di/dt (A/µ
100 A
50 A
I = 200 A
TM
20 A
10 A
IR K. 105.. Series
T = 1 25 °C
J
0.1
1
10
100
0.001 0.01 0.1 1 10 100 100
0
(b)
(a)
(4) (3) (2) (1)
Inst antaneous Gat e Current (A )
Instantaneou s Gat e Voltage (V)
TJ = -40 °C
TJ = 25 °C
TJ = 125 °C
a) Rec ommen de d lo ad line for
b) Rec ommen de d lo ad line for
VGD IGD Frequ enc y L i mited by P G(AV)
(1) PG M = 200 W, tp = 300 µs
(2) PGM = 60 W, tp = 1 m s
(3) PGM = 30 W, tp = 2 m s
(4) PGM = 12 W, tp = 5 m s
< = 30% ra ted di/dt: 15 V , 40 ohms
tr = 1 µs, tp >= 6 µs
rated di/dt: 20 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
Rectangular gate pulse
IR K.105.. Serie s
0.01
0.1
1
0.001 0.01 0.1 1 1
0
Sq u ar e Wave P uls e Dura tion (s)
thJC
Transient Thermal Impedance Z (K/W)
IR K. 105.. Se ries
Per J unction
Steady State Value:
R = 0.27 K/W
(DC Ope rat ion)
thJC
100
200
300
400
500
600
700
10 20 30 40 50 60 70 80 90 10
0
10 0 A
50 A
Rate Of Fall Of On-state Current - di/dt (A/µ
s)
Maximum Reverse Recovery Charge - Qrr (µC
)
I = 200 A
TM
20 A
10 A
IRK.10 5.. Series
T = 125 °C
J