MMUN2111LT1G, SMMUN2111LT1G, NSVMMUN2111LT1GSeries Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications. Features * * * * * * * * Simplifies Circuit Design Reduces Board Space Reduces Component Count The SOT-23 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 8 mm embossed tape and reel. AEC-Q101 Qualified and PPAP Capable S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Collector Current SOT-23 CASE 318 STYLE 6 PIN 1 BASE (INPUT) PIN 3 COLLECTOR (OUTPUT) R1 R2 PIN 2 EMITTER (GROUND) MARKING DIAGRAM A6x M G G 1 A6x = Device Code x = A - L (Refer to page 2) M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. MAXIMUM RATINGS (TA = 25C unless otherwise noted) Rating http://onsemi.com Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ORDERING INFORMATION Package Shipping MMUN21xxLT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel SMMUN21xxLT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel MMUN21xxLT3G SOT-23 (Pb-Free) 10,000 / Tape & Reel SMMUN21xxLT3G SOT-23 (Pb-Free) 10,000 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2012 January, 2012 - Rev. 12 1 DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 2 of this data sheet. Publication Order Number: MMUN2111LT1/D MMUN2111LT1G, SMMUN2111LT1G, NSVMMUN2111LT1G Series THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation TA = 25C PD Derate above 25C Max Unit 246 (Note 1) 400 (Note 2) 2.0 (Note 1) 3.2 (Note 2) MW mW/C Thermal Resistance, Junction-to-Ambient RqJA 508 (Note 1) 311 (Note 2) C/W Thermal Resistance, Junction-to-Lead RqJL 174 (Note 1) 208 (Note 2) C/W TJ, Tstg -55 to +150 C Junction and Storage, Temperature Range 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 x 1.0 inch Pad DEVICE MARKING AND RESISTOR VALUES Device* Package Marking R1 (K) R2 (K) Shipping MMUN2111LT1G, SMMUN2111LT1G MMUN2111LT3G, SMMUN2111LT3G SOT-23 A6A 10 10 3,000/Tape & Reel 10,000/Tape & Reel MMUN2112LT1G SOT-23 A6B 22 22 3,000/Tape & Reel MMUN2113LT1G, SMMUN2113LT1G MMUN2113LT3G SOT-23 A6C 47 47 3,000/Tape & Reel 10,000/Tape & Reel MMUN2114LT1G, SMMUN2114LT1G MMUN2114LT3G SOT-23 A6D 10 47 3,000/Tape & Reel 10,000/Tape & Reel MMUN2115LT1G SOT-23 A6E 10 3,000/Tape & Reel MMUN2116LT1G, SMMUN2116LT1G, SMMUN2116LT3G SOT-23 A6F 4.7 3,000/Tape & Reel 10,000/Tape & Reel MMUN2130LT1G (Note 3) SOT-23 A6G 1.0 1.0 3,000/Tape & Reel MMUN2131LT1G (Note 3) SOT-23 A6H 2.2 2.2 3,000/Tape & Reel MMUN2132LT1G, NSVMMUN2132LT1G SOT-23 A6J 4.7 4.7 3,000/Tape & Reel MMUN2133LT1G SOT-23 A6K 4.7 47 3,000/Tape & Reel MMUN2134LT1G, SMMUN2134LT1G (Note 3) SOT-23 A6L 22 47 3,000/Tape & Reel *The "G'' suffix indicates Pb-Free package available. 3. New devices. Updated curves to follow in subsequent data sheets. http://onsemi.com 2 MMUN2111LT1G, SMMUN2111LT1G, NSVMMUN2111LT1G Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max - - 100 - - 500 Unit OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MMUN2111LT1G, SMMUN2111LT1G MMUN2112LT1G MMUN2113LT1G, SMMUN2113LT1G MMUN2114LT1G, SMMUN2114LT1G MMUN2115LT1G MMUN2116LT1G, SMMUN2116LT1G MMUN2130LT1G MMUN2131LT1G MMUN2132LT1G, NSVMMUN2132LT1G MMUN2133LT1G MMUN2134LT1G, SMMUN2134LT1G IEBO Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO Collector-Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0) V(BR)CEO nAdc nAdc mAdc - - - - - - - - - - - - - - - - - - - - - - 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 50 - - 50 - - Min Typ Max 35 60 80 80 160 160 3.0 8.0 15 80 80 60 100 140 140 250 250 5.0 15 27 140 130 - - - - - - - - - - - Vdc Vdc 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Unit ON CHARACTERISTICS (Note 5) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MMUN2111LT1G, SMMUN2111LT1G MMUN2112LT1G MMUN2113LT1G, SMMUN2113LT1G MMUN2114LT1G, SMMUN2114LT1G MMUN2115LT1G MMUN2116LT1G, SMMUN2116LT1G MMUN2130LT1G MMUN2131LT1G MMUN2132LT1G, NSVMMUN2132LT1G MMUN2133LT1G MMUN2134LT1G, SMMUN2134LT1G hFE Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) MMUN2111LT1G, SMMUN2111LT1G MMUN2112LT1G MMUN2113LT1G, SMMUN2113LT1G MMUN2114LT1G, SMMUN2114LT1G (IC = 10 mA, IB = 5 mA) MMUN2130LT1G MMUN2131LT1G (IC = 10 mA, IB = 1 mA) MMUN2115LT1G MMUN2116LT1G, SMMUN2116LT1G MMUN2132LT1G, NSVMMUN2132LT1G MMUN2133LT1G MMUN2134LT1G, SMMUN2134LT1G VCE(sat) http://onsemi.com 3 Vdc - - - - - - - - 0.25 0.25 0.25 0.25 - - - - 0.25 0.25 - - - - - - - - - - 0.25 0.25 0.25 0.25 0.25 MMUN2111LT1G, SMMUN2111LT1G, NSVMMUN2111LT1G Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS (Note 5) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) MMUN2111LT1G, SMMUN2111LT1G MMUN2112LT1G MMUN2114LT1G, SMMUN2114LT1G MMUN2115LT1G MMUN2116LT1G, SMMUN2116LT1G MMUN2130LT1G MMUN2131LT1G MMUN2132LT1G, NSVMMUN2132LT1G MMUN2133LT1G MMUN2134LT1G, SMMUN2134LT1G (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) MMUN2113LT1G, SMMUN2113LT1G VOL Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) MMUN2111LT1G, SMMUN2111LT1G MMUN2112LT1G MMUN2113LT1G, SMMUN2113LT1G MMUN2114LT1G, SMMUN2114LT1G MMUN2133LT1G MMUN2134LT1G, SMMUN2134LT1G (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) MMUN2115LT1G MMUN2116LT1G, SMMUN2116LT1G MMUN2131LT1G MMUN2132LT1G, NSVMMUN2132LT1G (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW) MMUN2130LT1G VOH Input Resistor MMUN2111LT1G, SMMUN2111LT1G MMUN2112LT1G MMUN2113LT1G, SMMUN2113LT1G MMUN2114LT1G, SMMUN2114LT1G MMUN2115LT1G MMUN2116LT1G, SMMUN2116LT1G MMUN2130LT1G MMUN2131LT1G MMUN2132LT1G, NSVMMUN2132LT1G MMUN2133LT1G MMUN2134LT1G, SMMUN2134LT1G R1 Resistor Ratio MMUN2111LT1G, SMMUN2111LT1G MMUN2112LT1G MMUN2113LT1G, SMMUN2113LT1G MMUN2114LT1G, SMMUN2114LT1G MMUN2115LT1G MMUN2116LT1G, SMMUN2116LT1G MMUN2130LT1G MMUN2131LT1G MMUN2132LT1G, NSVMMUN2132LT1G MMUN2133LT1G MMUN2134LT1G, SMMUN2134LT1G R1/R2 5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% http://onsemi.com 4 Vdc - - - - - - - - - - - - - - - - - - - - 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 - - 0.2 Vdc 4.9 4.9 4.9 4.9 4.9 4.9 - - - - - - - - - - - - 4.9 4.9 4.9 4.9 - - - - - - - - 4.9 - - 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 0.8 0.8 0.8 0.17 - - 0.8 0.8 0.8 0.055 0.38 1.0 1.0 1.0 0.21 - - 1.0 1.0 1.0 0.1 0.47 1.2 1.2 1.2 0.25 - - 1.2 1.2 1.2 0.185 0.56 kW MMUN2111LT1G, SMMUN2111LT1G, NSVMMUN2111LT1G Series VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2111LT1, SMMUN2111LT1 PD , POWER DISSIPATION (MILLIWATTS) 250 200 150 100 RqJA = 625C/W 50 0 -50 0 50 100 150 1 IC/IB=10 TA=-25C 75C 0.1 0.01 20 0 TA, AMBIENT TEMPERATURE (C) 80 4 VCE = 10 V Cob , CAPACITANCE (pF) h FE, DC CURRENT GAIN (NORMALIZED) 60 Figure 2. VCE(sat) versus IC 1000 TA=75C 25C -25C 100 1 10 IC, COLLECTOR CURRENT (mA) 3 2 1 0 100 f = 1 MHz lE = 0 V TA = 25C 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 3. DC Current Gain 100 75C 100 25C VO = 0.2 V TA=-25C 10 1 0.1 0.01 0.001 50 Figure 4. Output Capacitance Vin, INPUT VOLTAGE (VOLTS) IC , COLLECTOR CURRENT (mA) 40 IC, COLLECTOR CURRENT (mA) Figure 1. Derating Curve 10 25C TA=-25C 10 25C 75C 1 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 0.1 10 Figure 5. Output Current versus Input Voltage 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 6. Input Voltage versus Output Current http://onsemi.com 5 50 MMUN2111LT1G, SMMUN2111LT1G, NSVMMUN2111LT1G Series 1000 10 h FE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2112LT1 IC/IB=10 TA=-25C 25C 1 75C 0.1 0.01 VCE = 10 V TA=75C 25C -25C 100 10 0 40 20 60 IC, COLLECTOR CURRENT (mA) 10 1 80 Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 100 IC , COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 2 1 0 0 75C 25C TA=-25C 10 1 0.1 VO = 5 V 0.01 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 0 1 2 3 4 VO = 0.2 V TA=-25C 25C 10 75C 1 0 10 6 7 8 9 Figure 10. Output Current versus Input Voltage 100 0.1 5 Vin, INPUT VOLTAGE (VOLTS) Figure 9. Output Capacitance Vin, INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 4 3 100 IC, COLLECTOR CURRENT (mA) 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 11. Input Voltage versus Output Current http://onsemi.com 6 10 MMUN2111LT1G, SMMUN2111LT1G, NSVMMUN2111LT1G Series 1 1000 IC/IB=10 TA=-25C h FE , CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2113LT1, SMMUN2113LT1 25C 75C 0.1 0.01 0 10 20 30 IC, COLLECTOR CURRENT (mA) TA=75C 25C -25C 100 10 40 1 10 IC, COLLECTOR CURRENT (mA) Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 1 100 0.6 0.4 0.2 TA=75C 25C -25C 10 1 0.1 0.01 VO = 5 V 0 0 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 0 1 2 3 4 VO = 2 V TA=-25C 25C 75C 10 1 0 10 6 7 8 9 10 Figure 15. Output Current versus Input Voltage 100 0.1 5 Vin, INPUT VOLTAGE (VOLTS) Figure 14. Output Capacitance Vin , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) I C , COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 0.8 100 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 16. Input Voltage versus Output Current http://onsemi.com 7 MMUN2111LT1G, SMMUN2111LT1G, NSVMMUN2111LT1G Series 1 180 IC/IB=10 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2114LT1, SMMUN2114LT1 TA=-25C 25C 0.1 75C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) TA=75C VCE = 10 V 160 25C 140 -25C 120 100 80 60 40 20 0 80 2 1 4 6 Figure 17. VCE(sat) versus IC 90 100 100 4 TA=75C 3.5 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 3 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 10 VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) TA=-25C 25C 75C 1 0.1 0 10 8 10 Figure 20. Output Current versus Input Voltage 10 VO = 0.2 V 25C -25C 1 50 Figure 19. Output Capacitance V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 80 Figure 18. DC Current Gain 4.5 0 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 21. Input Voltage versus Output Current http://onsemi.com 8 50 MMUN2111LT1G, SMMUN2111LT1G, NSVMMUN2111LT1G Series 1 1000 75C 0.1 -25C 25C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) TA = -25C 100 10 1 50 25C 1 10 IC, COLLECTOR CURRENT (mA) Figure 22. VCE(sat) versus IC 100 10 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 8 6 4 2 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75C 10 25C 1 TA = -25C 0.1 0.01 0.001 50 Figure 24. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = -25C 1 75C 0.1 0 9 10 Figure 25. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 23. DC Current Gain 12 0 VCE = 10 V 75C IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2115LT1 25C 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 26. Input Voltage versus Output Current http://onsemi.com 9 50 MMUN2111LT1G, SMMUN2111LT1G, NSVMMUN2111LT1G Series 1 1000 IC/IB = 10 75C 0.1 -25C 25C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 25C 10 1 50 TA = -25C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 27. VCE(sat) versus IC 100 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 10 8 6 4 2 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75C 10 25C 1 TA = -25C 0.1 0.01 0.001 50 Figure 29. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 9 10 Figure 30. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 28. DC Current Gain 12 0 VCE = 10 V 75C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2116LT1, SMMUN2116LT1 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 31. Input Voltage versus Output Current http://onsemi.com 10 50 MMUN2111LT1G, SMMUN2111LT1G, NSVMMUN2111LT1G Series 1 1000 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2132LT1, NSVMMUN2132LT1 75C 0.1 -25C 25C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 25C 10 TA = -25C 1 50 75C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 32. VCE(sat) versus IC Figure 33. DC Current Gain IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz lE = 0 V TA = 25C 8 6 4 2 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75C 10 25C 1 TA = -25C 0.1 0.01 0.001 50 Figure 34. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 9 10 Figure 35. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 12 10 100 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 36. Input Voltage versus Output Current http://onsemi.com 11 50 MMUN2111LT1G, SMMUN2111LT1G, NSVMMUN2111LT1G Series 1 1000 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2133LT1 75C 0.1 -25C 25C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 75C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 37. VCE(sat) versus IC IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz lE = 0 V TA = 25C 7 Cob, CAPACITANCE (pF) 100 Figure 38. DC Current Gain 8 6 5 4 3 2 1 0 25C 10 1 50 TA = -25C 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75C 10 25C 1 0.1 VO = 5 V 0.001 50 Figure 39. Output Capacitance TA = -25C 0.01 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) 9 10 Figure 40. Output Current versus Input Voltage +12 V Vin, INPUT VOLTAGE (VOLTS) 10 Typical Application for PNP BRTs TA = -25C 1 75C 25C LOAD VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 41. Input Voltage versus Output Current Figure 42. Inexpensive, Unregulated Current Source http://onsemi.com 12 MMUN2111LT1G, SMMUN2111LT1G, NSVMMUN2111LT1G Series PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 --- MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR L1 VIEW C SOLDERING FOOTPRINT 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5817-1050 http://onsemi.com 13 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MMUN2111LT1/D