General purpose PIN diode BAP50 - 02 FEATURES * Low diode capacitance * Low diode forward resistance. APPLICATIONS * General RF applications. DESCRIPTION General purpose PIN diode in a SOD523 small SMD plastic package. 1 2 SOD523 SC-79 1 CATHODE 2 ANODE LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). I SYMBOL VR PARAMETER continuous reverse voltage IF P tot continuous forward current total power dissipation T stg Tj storage temperature junction temperature CONDITIONS T s =90C MIN. - MAX. 50 UNIT V - - 50 715 mA mW -65 -65 +150 +150 C C ELECTRICAL CHARACTERISTICS T j = 25C unless otherwise specified. SYMBOL PARAMETER VF VR forward voltage reverse voltage IR Cd reverse current diode capacitance rD |s 21| 2 diode forward resistance isolation |s 21| 2 insertion loss |s 21| 2 insertion loss |s 21| 2 insertion loss CONDITIONS MIN TYP. MAX. UNIT I F =50 mA I R =10A - 50 0.95 - 1.1 - V V V R =50 V V R = 0; f = 1 MHz - - - 0.4 100 - nA pF V R = 1 V; f = 1 MHz V R = 5 V; f = 1 MHz - - 0.3 0.22 0.55 0.35 pF pF I F = 0.5 mA; f = 100 MHz; note 1 I F = 1 mA; f = 100 MHz; note 1 - - 25 14 40 25 I F = 10 mA; f = 100 MHz; note 1 V R = 0; f = 900 MHz - - 3 20.4 5 - dB V R = 0; f = 1800 MHz V R = 0; f = 2450 MHz - - 17.3 15.5 - - dB dB I F = 0.5 mA; f = 900 MHz I F = 0.5 mA; f = 1800 MHz - - 1.74 1.79 - - dB dB I F = 0.5 mA; f = 2450 MHz I F = 1 mA; f = 900 MHz - - 1.88 1.03 - - dB dB I F = 1 mA; f = 1800 MHz I F = 1 mA; f = 2450 MHz - - 1.09 1.15 - - dB dB I F = 10 mA; f = 900 MHz I F = 10 mA; f = 1800 MHz - - 0.26 0.32 - - dB dB I F = 10 mA; f = 2450 MHz - 0.34 - dB S23-1/2 BAP50-02 ELECTRICAL CHARACTERISTICS T j = 25C unless otherwise specified. (Continue) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX. UNIT L charge carrier life time when switched from I F =10 mA to I R = 6 mA; R L = 100 ; - 1.05 - s - 0.6 - nH L measured at I R =3 mA I F = 100 mA; f = 100 MHz series inductance S Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering-point VALUE 85 UNIT K/W 12 16 600 10 3 f = 100 MHz; T j =25C 400 r D( ) C d (pF) 10 2 10 1 200 10 -1 1 f = 1 MHz; T j =25C 0 10 2 10 0 I F (mA ) 4 8 20 VR(V) Fig.2 Diode capacitance as a function of reverse voltage; typical values. Fig.1 Forward resistance as a function of forward current; typical values. 0 0 I F =10 mA. -5 I F = 1 mA. -2 |s 21| 2(dB) |s 21| 2(dB) -1 I F = 0.5 mA. -3 -10 -15 -4 -20 Diode inserted in series with a 50 stripline circuit and biased via the analyzer Tee network. Diode zero biased and inserted in series with a 50 stripline circuit. Tamb =25C. Tamb =25C. -5 0.5 1 1.5 2 2.5 3 f (GHz ) Fig.3 Insertion loss ( |s 21| 2 )of the diode in on-state as a function of frequency; typical values. -25 0.5 1 1.5 2 2.5 3 f (GHz ) Fig.4 Isolation ( |s 21| 2 ) of the diode in off-state as a function of frequency; typical values. S23-2/2