FEATURES
• This product is suitable for medium output power (1 W) amplification
P
out = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz
P
out = 30 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 900 MHz
• MSG (Maximum Stable Gain) = 23 dB TYP. @ VCE = 6 V, Ic = 100 mA, f = 460 MHz
• Using UHS2-HV process (SiGe technology), VCBO (ABSOLUTE MAXIMUM RATINGS) = 25 V
• 3-pin power minimold (34 PKG)
ORDERING INFORMATION
Part Number Order Number Package Quantity Supplying Form
NESG260234 NESG260234-AZ 3-pin power minimold
(Pb-Free) Note1, 2
25 pcs
(Non reel)
• Magazine case
NESG260234-T1 NESG260234-T1-AZ 1 kpcs/reel • 12 mm wide embossed taping
• Pin 2 (Emitter) face the perforation side of the tape
Notes 1. Contains Lead in the part except the electrode terminals.
2. With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact
your nearby sales office.
Remark To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO 25 V
Collector to Emitter Voltage VCEO 9.2 V
Emitter to Base Voltage VEBO 2.8 V
Collector Current IC 600 mA
Total Power Dissipation Ptot Note 1.9 W
Junction Temperature Tj 150
°C
Storage Temperature Tstg −65 to +150 °C
Note Mounted on 34.2 cm2 × 0.8 mm (t) glass epoxy PWB
The mark shows major revised points.
DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
NPN SILICON GERMANIUM RF TRANSISTOR
NESG260234
NPN SiGe RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (1 W)
3-PIN POWER MINIMOLD (34 PKG)
Document No. PU10547EJ02V0DS (2nd edition)
Date Published May 2005 CP(K)
Printed in Japan ©
NEC Compound Semiconductor Devices, Ltd. 2004, 2005
THERMAL RESISTANCE (TA = +25°C)
Parameter Symbol Ratings Unit
Termal Resistance from Junction to
Ambient Note
Rthj-a 65 °C/W
Note Mounted on 34.2 cm2 × 0.8 mm (t) glass epoxy PWB
RECOMMENDED OPERATING RANGE (TA = +25°C)
Parameter Symbol MIN. TYP. MAX. Unit
Collector to Emitter Voltage VCE − 6.0 7.2 V
Collector Current IC − 400 500 mA
Input Power Note Pin − 15 20 dBm
Note Input power under conditions of VCE ≤ 6.0 V, f = 460 MHz
Data Sheet PU10547EJ02V0DS
2
NESG260234
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
DC Characteristics
Collector Cut-off Current ICBO VCB = 9.2 V, IE = 0 mA − − 1
µ
A
Emitter Cut-off Current IEBO VEB = 1.0 V, IC = 0 mA − − 1
µ
A
DC Current Gain hFE Note VCE = 3 V, IC = 100 mA 80 120 180 −
RF Characteristics
Linner Gain (1) GL VCE = 6 V, IC (set) = 30 mA (RF OFF),
f = 460 MHz, Pin = 0 dBm
19 22 − dB
Linner Gain (2) GL VCE = 6 V, IC (set) = 30 mA (RF OFF),
f = 900 MHz, Pin = 0 dBm
− 19 − dB
Output Power (1) Pout VCE = 6 V, IC (set) = 30 mA (RF OFF),
f = 460 MHz, Pin = 15 dBm
28.5 30.0 − dBm
Output Power (2) Pout VCE = 6 V, IC (set) = 30 mA (RF OFF),
f = 900 MHz, Pin = 20 dBm
− 30.0 − dBm
Collector Efficiency (1)
η
C VCE = 6 V, IC (set) = 30 mA (RF OFF),
f = 460 MHz, Pin = 15 dBm
− 50 − %
Collector Efficiency (2)
η
C VCE = 6 V, IC (set) = 30 mA (RF OFF),
f = 900 MHz, Pin = 20 dBm
− 60 − %
Note Pulse measurement: PW ≤ 350
µ
s, Duty Cycle ≤ 2%
hFE CLASSIFICATION
Rank FB
Marking SP
hFE Value 80 to 180
Data Sheet PU10547EJ02V0DS 3
NESG260234
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
1.6
1.2
1.0
0.6
0.2
0246810
1.4
0.8
0.4
Reverse Transfer Capacitance Cre (pF)
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
f = 1 MHz
1 000
Collector Current IC (mA)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.01
0.001
0.1
0.0001 0.70.5 0.60.4 0.8 0.9 1.0
VCE = 5 V
1 000
100
10
1
0.01
0.001
0.1
0.0001 0.70.5 0.60.4 0.8 0.9 1.0
Base to Emitter Voltage VBE (V)
Collector Current IC (mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
VCE = 6 V
Collector Current IC (mA)
1 000
100
10
1
0.01
0.001
0.1
0.0001 0.70.5 0.60.4 0.8 0.9 1.0
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
VCE = 7 V
Base to Emitter Voltage VBE (V)
100
10
1
0.01
0.001
0.1
0.0001 0.70.5 0.60.4 0.8 0.9 1.0
1 000
Collector Current IC (mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 3 V
Total Power Dissipation Ptot (mW)
Ambient Temperature TA (˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
2.0
1.6
1.2
0.8
0.4
025 50 75 100 125 150 175
Nature Neglect
Mounted on glass epoxy PWB
(34.2 cm2 × 0.8 mm (t) )
Remark The graphs indicate nominal characteristics.
Data Sheet PU10547EJ02V0DS
4
NESG260234
DC Current Gain h
FE
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
Collector Current I
C
(mA)
Collector to Emitter Voltage V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
500
021356789104
400
200
300
100
V
CE
= 7 V
1 000
100
10
110010 1 000
DC Current Gain h
FE
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC Current Gain h
FE
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
V
CE
= 5 V
1 000
100
10
110010 1 000
1 000
100
10
110010 1 000
V
CE
= 6 V
Gain Bandwidth Product f
T
(GHz)
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
20
15
10
5
010 100 1 000
V
CE
= 5 V
f = 460 MHz
3 mA
2 mA
5 mA
4 mA
7 mA
6 mA
9 mA
8 mA
10 mA
I
B
=
1 mA
3 mA
2 mA
5 mA
4 mA
7 mA
6 mA
9 mA
8 mA
10 mA
I
B
=
1 mA
Remark The graphs indicate nominal characteristics.
Data Sheet PU10547EJ02V0DS 5
NESG260234
Collector Current I
C
(mA)
Gain Bandwidth Product f
T
(GHz)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Gain Bandwidth Product f
T
(GHz)
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
40
30
25
20
15
10
5
0
0.1 1.0 10
35
V
CE
= 6 V
I
C
= 100 mA
10 100 1 000
30
0
5
10
15
20
25
40
30
25
20
15
10
5
0
0.1 1.0 10
35
20
15
10
5
010 100 1 000
V
CE
= 6 V
f = 460 MHz
20
15
10
5
010 100 1 000
V
CE
= 7 V
f = 460 MHz
40
30
25
20
15
10
5
0
0.1 1.0 10
35
V
CE
= 5 V
I
C
= 100 mA
|S
21e
|
2
|S
21e
|
2
V
CE
= 7 V
I
C
= 100 mA
|S
21e
|
2
|S
21e
|
2
V
CE
= 5 V
f = 460 MHz
MSG MAG
MSG
MAG
MAG
MSG
MAG
MAG
MSG
MAG
MSG MSG
MAG
MSG
Remark The graphs indicate nominal characteristics.
Data Sheet PU10547EJ02V0DS
6
NESG260234
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
10 100 1 000
30
0
5
10
15
20
25
10 100 1 000
30
25
20
15
10
5
0
|S21e|2
VCE = 7 V
f = 460 MHz
MSG MAG
|S
21e
|
2
V
CE
= 6 V
f = 460 MHz
MSG MAG
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.ncsd.necel.com/
PA EVALUATION CIRCUIT TYPICAL CHARACTERISTICS
–5 5015
35
30
25
20
15
10
500
400
300
200
100
0
10 20
Input Power P
in
(dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
Output Power P
out
(dBm), Power Gain G
P
(dB)
Collector Current I
C
(mA), Collector Efficiency
C
(%)
η
VCE = 6 V, f = 460 MHz
IC (set) = 30 mA
G
P
P
out
I
C
C
η
15
Collector Current I
C
(mA), Collector Efficiency
C
(%)
η
–5 50
Input Power P
in
(dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
Output Power P
out
(dBm), Power Gain G
P
(dB)
35
30
25
20
15
10
500
400
300
200
100
0
10 20
GP
V
CE
= 4.5 V, f = 460 MHz
I
C (set)
= 30 mA
Pout
IC
C
η
Remark The graphs indicate nominal characteristics.
Data Sheet PU10547EJ02V0DS 7
NESG260234
EVALUATION CIRCUIT (f = 460 MHz)
RF IN
C1
V
BE
C4
L1
RF OUT
C2
C3
V
CE
L2
R1
C5
L5
L3
L4
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
EVALUATION BOARD (f = 460 MHz)
34-05
C1
C2
L5
C3
C4
C5
L1
L2
L3
L4
R1
INPUT OUTPUT
GND V
BE
V
CE
GND
SP
Notes
1. 20 × 20 mm, t = 0.8 mm double sided copper clad glass epoxy PWB.
2. Back side: GND pattern
3. Solder gold plated on pattern
4. : Through holes
Data Sheet PU10547EJ02V0DS
8
NESG260234
COMPONENT LIST
Component Maker Value Size (TYPE) Purpose
C1 Murata 10 pF 1005 Input DC Block/Input RF Matching
C2 Murata 4 pF 1005 Input RF Matching
C3 Murata 33 pF 1005 Input DC Block/Output RF Matching
C4 Murata 10 000 pF 1005 RF GND
C5 Murata
1
µ
F 1608 RF GND
L1 Toko 68 nH 1005 RF Block/Input RF Matching
L2 Toko 33 nH LLQ2021 RF Block/Output RF Matching
L3 Toko 1 nH 1005 Input RF Matching
L4 Toko 8.2 nH 1005 Input RF Matching
L5 Toko 8.2 nH LLQ2021 Output RF Matching
R1 SSM
15 Ω 1608 Improve Stability
Data Sheet PU10547EJ02V0DS 9
NESG260234
PACKAGE DIMENSIONS
3-PIN POWER MINIMOLD (34 PKG) (UNIT: mm)
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
1.5±0.1
0.41
+0.03
–0.06
4.5±0.1
0.42±0.060.42±0.06
1.6±0.2
3.0
1.5
2
13
2.5±0.1
4.0±0.25
0.8 MIN.
0.47±0.06
Data Sheet PU10547EJ02V0DS
10
NESG260234
When the product(s) listed in this document is subject to any applicable import or export control laws and regulation of the authority
having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license.
M8E 00. 4 - 0110
The information in this document is current as of May, 2005. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
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agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
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semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
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Customers must check the quality grade of each semiconductor product before using it in a particular
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"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
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The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
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(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
•
•
•
•
•
•
Data Sheet PU10547EJ02V0DS 11
NESG260234
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general)
Hong Kong Head Office
Taipei Branch Office
Korea Branch Office
TEL: +852-3107-7303
TEL: +886-2-8712-0478
TEL: +82-2-558-2120
FAX: +852-3107-7309
FAX: +886-2-2545-3859
FAX: +82-2-558-5209
NEC Electronics (Europe) GmbH http://www.ee.nec.de/
TEL: +49-211-6503-0 FAX: +49-211-6503-1327
California Eastern Laboratories, Inc. http://www.cel.com/
TEL: +1-408-988-3500 FAX: +1-408-988-0279
0504
NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/
E-mail: salesinfo@ml.ncsd.necel.com (sales and general)
techinfo@ml.ncsd.necel.com (technical)
Sales Division TEL: +81-44-435-1573 FAX: +81-44-435-1579
For further information, please contact
NESG260234
