DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (1 W) 3-PIN POWER MINIMOLD (34 PKG) FEATURES * This product is suitable for medium output power (1 W) amplification Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 900 MHz * MSG (Maximum Stable Gain) = 23 dB TYP. @ VCE = 6 V, Ic = 100 mA, f = 460 MHz * Using UHS2-HV process (SiGe technology), VCBO (ABSOLUTE MAXIMUM RATINGS) = 25 V * 3-pin power minimold (34 PKG) ORDERING INFORMATION Part Number NESG260234 Order Number Package NESG260234-AZ 3-pin power minimold (Pb-Free) NESG260234-T1 Quantity Note1, 2 25 pcs Supplying Form * Magazine case (Non reel) NESG260234-T1-AZ 1 kpcs/reel * 12 mm wide embossed taping * Pin 2 (Emitter) face the perforation side of the tape Notes 1. Contains Lead in the part except the electrode terminals. 2. With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact your nearby sales office. Remark To order evaluation samples, contact your nearby sales office. Unit sample quantity is 25 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 25 V Collector to Emitter Voltage VCEO 9.2 V Emitter to Base Voltage VEBO 2.8 V IC 600 mA 1.9 W Collector Current Total Power Dissipation Ptot Note Junction Temperature Tj 150 C Storage Temperature Tstg -65 to +150 C 2 Note Mounted on 34.2 cm x 0.8 mm (t) glass epoxy PWB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PU10547EJ02V0DS (2nd edition) Date Published May 2005 CP(K) Printed in Japan The mark shows major revised points. (c) NEC Compound Semiconductor Devices, Ltd. 2004, 2005 NESG260234 THERMAL RESISTANCE (TA = +25C) Parameter Termal Resistance from Junction to Ambient Symbol Ratings Unit Rthj-a 65 C/W Note 2 Note Mounted on 34.2 cm x 0.8 mm (t) glass epoxy PWB RECOMMENDED OPERATING RANGE (TA = +25C) Parameter Collector to Emitter Voltage Collector Current Input Power Note Symbol MIN. TYP. MAX. Unit VCE - 6.0 7.2 V IC - 400 500 mA Pin - 15 20 dBm Note Input power under conditions of VCE 6.0 V, f = 460 MHz 2 Data Sheet PU10547EJ02V0DS NESG260234 ELECTRICAL CHARACTERISTICS (TA = +25C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 9.2 V, IE = 0 mA - - 1 A Emitter Cut-off Current IEBO VEB = 1.0 V, IC = 0 mA - - 1 A VCE = 3 V, IC = 100 mA 80 120 180 - VCE = 6 V, IC (set) = 30 mA (RF OFF), 19 22 - dB - 19 - dB 28.5 30.0 - dBm - 30.0 - dBm - 50 - % - 60 - % DC Current Gain hFE Note RF Characteristics Linner Gain (1) GL f = 460 MHz, Pin = 0 dBm Linner Gain (2) GL VCE = 6 V, IC (set) = 30 mA (RF OFF), f = 900 MHz, Pin = 0 dBm Output Power (1) Pout VCE = 6 V, IC (set) = 30 mA (RF OFF), f = 460 MHz, Pin = 15 dBm Output Power (2) Pout VCE = 6 V, IC (set) = 30 mA (RF OFF), f = 900 MHz, Pin = 20 dBm C Collector Efficiency (1) VCE = 6 V, IC (set) = 30 mA (RF OFF), f = 460 MHz, Pin = 15 dBm C Collector Efficiency (2) VCE = 6 V, IC (set) = 30 mA (RF OFF), f = 900 MHz, Pin = 20 dBm Note Pulse measurement: PW 350 s, Duty Cycle 2% hFE CLASSIFICATION Rank FB Marking SP hFE Value 80 to 180 Data Sheet PU10547EJ02V0DS 3 NESG260234 TYPICAL CHARACTERISTICS (TA = +25C, unless otherwise specified) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Reverse Transfer Capacitance Cre (pF) Total Power Dissipation Ptot (mW) 2.0 Mounted on glass epoxy PWB (34.2 cm2 x 0.8 mm (t) ) 1.6 1.2 0.8 Nature Neglect 0.4 25 0 50 75 100 125 150 1.6 f = 1 MHz 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 175 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 1 000 10 VCE = 5 V 100 Collector Current IC (mA) Collector Current IC (mA) 8 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 10 1 0.1 0.01 0.001 10 1 0.1 0.01 0.001 0.0001 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.0001 0.4 0.6 0.7 0.8 0.9 Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 1 000 VCE = 6 V 1.0 VCE = 7 V 100 Collector Current IC (mA) 10 1 0.1 0.01 10 1 0.1 0.01 0.001 0.001 0.0001 0.4 0.5 Base to Emitter Voltage VBE (V) 100 Collector Current IC (mA) 6 Collector to Base Voltage VCB (V) VCE = 3 V 0.5 0.6 0.7 0.8 0.9 1.0 0.0001 0.4 Base to Emitter Voltage VBE (V) 0.5 0.6 0.7 0.8 0.9 Base to Emitter Voltage VBE (V) Remark The graphs indicate nominal characteristics. 4 4 Ambient Temperature TA (C) 1 000 1 000 2 Data Sheet PU10547EJ02V0DS 1.0 NESG260234 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE Collector Current IC (mA) 500 10 mA 400 9 mA 8 mA 7 mA 6 mA 5 mA 300 4 mA 3 mA 200 2 mA 100 IB = 1 mA 0 1 2 3 4 5 6 7 8 9 10 Collector to Emitter Voltage VCE (V) DC CURRENT GAIN vs. COLLECTOR CURRENT DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 1 000 VCE = 6 V DC Current Gain hFE DC Current Gain hFE VCE = 5 V 100 10 1 10 100 100 Collector Current IC (mA) Collector Current IC (mA) DC CURRENT GAIN vs. COLLECTOR CURRENT GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 1 000 20 100 10 100 1 000 Gain Bandwidth Product fT (GHz) VCE = 7 V DC Current Gain hFE 10 1 10 1 000 1 000 1 10 100 VCE = 5 V f = 460 MHz 15 10 5 0 10 100 1 000 Collector Current IC (mA) Collector Current IC (mA) Remark The graphs indicate nominal characteristics. Data Sheet PU10547EJ02V0DS 5 NESG260234 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 20 Gain Bandwidth Product fT (GHz) VCE = 6 V f = 460 MHz 15 10 5 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 100 100 1 000 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY VCE = 5 V IC = 100 mA 30 MAG 25 20 MAG 15 MSG 10 |S21e|2 5 0 0.1 1.0 10 40 VCE = 6 V IC = 100 mA 35 MSG 30 MAG 25 20 MAG 15 MSG 10 |S21e|2 5 0 0.1 1.0 10 Frequency f (GHz) Frequency f (GHz) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 40 VCE = 7 V IC = 100 mA 35 MSG MAG 25 20 MAG 15 MSG 10 |S21e|2 1.0 10 Frequency f (GHz) 30 MSG 25 MAG 20 |S21e|2 15 10 5 VCE = 5 V f = 460 MHz 0 10 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. 6 5 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY MSG 0 0.1 10 Collector Current IC (mA) 35 5 15 Collector Current IC (mA) 40 30 VCE = 7 V f = 460 MHz 0 10 1 000 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 0 10 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Gain Bandwidth Product fT (GHz) 20 Data Sheet PU10547EJ02V0DS 1 000 NESG260234 30 MSG 25 MAG 20 |S21e|2 15 10 5 VCE = 6 V f = 460 MHz 0 10 100 1 000 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 MSG 25 MAG 20 |S21e|2 15 10 5 VCE = 7 V f = 460 MHz 0 10 100 Collector Current IC (mA) 1 000 Collector Current IC (mA) S-PARAMETERS S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] [Device Parameters] URL http://www.ncsd.necel.com/ 500 VCE = 4.5 V, f = 460 MHz IC (set) = 30 mA 30 400 Pout 25 300 GP 20 200 IC 15 10 -5 100 C 0 5 10 Input Power Pin (dBm) 15 0 20 OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 35 500 VCE = 6 V, f = 460 MHz IC (set) = 30 mA 30 400 Pout 25 300 GP 20 200 IC 15 10 -5 100 C 0 5 10 15 0 20 Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. Data Sheet PU10547EJ02V0DS 7 Collector Current IC (mA), Collector Efficiency C (%) 35 Output Power Pout (dBm), Power Gain GP (dB) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER Collector Current IC (mA), Collector Efficiency C (%) Output Power Pout (dBm), Power Gain GP (dB) PA EVALUATION CIRCUIT TYPICAL CHARACTERISTICS NESG260234 EVALUATION CIRCUIT (f = 460 MHz) VCE VBE R1 C5 C4 L2 L5 L1 C3 RF OUT L3 RF IN C2 C1 L4 The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. EVALUATION BOARD (f = 460 MHz) VCE GND GND VBE R1 L2 C4 C5 L1 SP INPUT OUTPUT C3 L4 L3 C2 34-05 C1 L5 Notes 1. 20 x 20 mm, t = 0.8 mm double sided copper clad glass epoxy PWB. 2. Back side: GND pattern 3. Solder gold plated on pattern 4. 8 : Through holes Data Sheet PU10547EJ02V0DS NESG260234 COMPONENT LIST Component Maker Value Size (TYPE) Purpose C1 Murata 10 pF 1005 Input DC Block/Input RF Matching C2 Murata 4 pF 1005 Input RF Matching C3 Murata 33 pF 1005 Input DC Block/Output RF Matching C4 Murata 10 000 pF 1005 RF GND C5 Murata 1 F 1608 RF GND L1 Toko 68 nH 1005 RF Block/Input RF Matching L2 Toko 33 nH LLQ2021 L3 Toko 1 nH 1005 Input RF Matching L4 Toko 8.2 nH 1005 Input RF Matching L5 Toko 8.2 nH LLQ2021 R1 SSM 15 1608 RF Block/Output RF Matching Output RF Matching Improve Stability Data Sheet PU10547EJ02V0DS 9 NESG260234 PACKAGE DIMENSIONS 3-PIN POWER MINIMOLD (34 PKG) (UNIT: mm) 4.50.1 1.50.1 0.8 MIN. 2 1 3 0.420.06 4.00.25 2.50.1 1.60.2 0.420.06 0.470.06 1.5 3.0 PIN CONNECTIONS 1. Collector 2. Emitter 3. Base 10 Data Sheet PU10547EJ02V0DS 0.41+0.03 -0.06 NESG260234 When the product(s) listed in this document is subject to any applicable import or export control laws and regulation of the authority having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license. * The information in this document is current as of May, 2005. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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M8E 00. 4 - 0110 Data Sheet PU10547EJ02V0DS 11 NESG260234 For further information, please contact NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/ E-mail: salesinfo@ml.ncsd.necel.com (sales and general) techinfo@ml.ncsd.necel.com (technical) Sales Division TEL: +81-44-435-1573 FAX: +81-44-435-1579 NEC Compound Semiconductor Devices Hong Kong Limited E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general) FAX: +852-3107-7309 TEL: +852-3107-7303 Hong Kong Head Office TEL: +886-2-8712-0478 FAX: +886-2-2545-3859 Taipei Branch Office FAX: +82-2-558-5209 TEL: +82-2-558-2120 Korea Branch Office NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-0 FAX: +49-211-6503-1327 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 0504