Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3515S02
X to Ku-BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
Document No. PG10708EJ01V0DS (1st edition)
Date Published February 2008 NS
FEATURES
• Super low noise figure, high associated gain and middle output power
NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA
PO (1dB) = +14 dBm TYP. @ f = 12 GHz, VDS = 3 V, ID = 25 mA set (Non-RF)
• Micro-X plastic (S02) package
APPLICATIONS
• X to Ku-band local buffer amplifier, PA driver amplifier, low noise amplifier, mixer
• DBS LNB, VSAT
• Other X to Ku-band communication systems
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
Marking
Supplying Form
NE3515S02-T1C
NE3515S02-T1C-A
S02 (Pb-Free)
2 kpcs/reel
G
• 8 mm wide embossed taping
• Pin 4 (Gate) faces the perforation side
of the tape
NE3515S02-T1D
NE3515S02-T1D-A
10 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE3515S02-A
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
4
V
Gate to Source Voltage
VGS
3
V
Drain Current
ID
IDSS
mA
Gate Current
IG
100
A
Total Power Dissipation
Ptot Note
165
mW
Channel Temperature
Tch
+125
C
Storage Temperature
Tstg
65 to +125
C
Note Mounted on 1.08 cm2 1.0 mm (t) glass epoxy PCB
Data Sheet PG10708EJ01V0DS
2
NE3515S02
RECOMMENDED OPERATING CONDITIONS (TA = +25C)
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
Drain to Source Voltage
VDS
1
2
3
V
Drain Current
ID
5
10
25
mA
Input Power
Pin
0
dBm
ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise specified)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Gate to Source Leak Current
IGSO
VGS = 3 V
0.5
10
A
Saturated Drain Current
IDSS
VDS = 2 V, VGS = 0 V
32
60
88
mA
Gate to Source Cutoff Voltage
VGS (off)
VDS = 2 V, ID = 100
A
0.2
0.8
1.4
V
Transconductance
gm
VDS = 2 V, ID = 10 mA
45
70
mS
Noise Figure
NF
VDS = 2 V, ID = 10 mA, f = 12 GHz
0.3
0.5
dB
Associated Gain
Ga
11
12.5
dB
Gain 1 dB Compression
PO (1 dB)
VDS = 3 V, ID = 25 mA set (Non-RF),
+14
dBm
Output Power
f = 12 GHz
Data Sheet PG10708EJ01V0DS
3
NE3515S02
TYPICAL CHARACTERISTICS (TA = +25C, unless otherwise specified)
Remark The graphs indicate nominal characteristics.
Data Sheet PG10708EJ01V0DS
4
NE3515S02
Remark The graphs indicate nominal characteristics.
Data Sheet PG10708EJ01V0DS
5
NE3515S02
S-PARAMETERS
Data Sheet PG10708EJ01V0DS
6
NE3515S02
RF MEASURING LAYOUT PATTERN (REFERENCE ONLY) (UNIT: mm)
RT/duroid 5880/ROGERS
t = 0.254 mm
r = 2.20
tan delta = 0.0009 @10 GHz
Data Sheet PG10708EJ01V0DS
7
NE3515S02
PACKAGE DIMENSIONS
S02 (UNIT: mm)
Data Sheet PG10708EJ01V0DS
8
NE3515S02
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Soldering Conditions
Condition Symbol
Infrared Reflow
Peak temperature (package surface temperature) : 260C or below
Time at peak temperature : 10 seconds or less
Time at temperature of 220C or higher : 60 seconds or less
Preheating time at 120 to 180C : 12030 seconds
Maximum number of reflow processes : 3 times
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
IR260
Partial Heating
Peak temperature (terminal temperature) : 350C or below
Soldering time (per side of device) : 3 seconds or less
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
HS350
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet PG10708EJ01V0DS 9
NE3515S02
Caution GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the
following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
