BAT42W-V, BAT43W-V Vishay Semiconductors Small Signal Schottky Diodes Features * These diodes feature very low turn-on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges * These diodes are also available in the DO-35 case with the type designations BAT42 to BAT43 and in MiniMELF SOD-80 case with the type designations LL42 to LL43 * For general purpose applications * AEC-Q101 qualified * Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 17431 Mechanical Data Case: SOD-123 Weight: approx. 10.3 mg Packaging Codes/Options: GS18/10 k per 13" reel (8 mm tape), 10 k/box GS08/3 k per 7" reel (8 mm tape), 15 k/box Parts Table Part Ordering code Type Marking Remarks BAT42W-V BAT42W-V-GS18 or BAT42W-V-GS08 L2 Tape and Reel BAT43W-V BAT43W-V-GS18 or BAT43W-V-GS08 L3 Tape and Reel Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Test condition Repetitive peak reverse voltage Surge forward current Power dissipation 1) 1) Value Unit VRRM 30 V IF Forward continuous current Repetitive peak forward current Symbol tp < 1 s, < 0.5 IFRM tp < 10 ms IFSM Tamb = 65 C Ptot 1) mA 5001) mA 200 4 1) 2001) A mW Valid provided that electrodes are kept at ambient temperature Document Number 85661 Rev. 1.6, 05-Aug-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 BAT42W-V, BAT43W-V Vishay Semiconductors Thermal Characteristics Tamb = 25 C, unless otherwise specified Parameter Test condition Symbol Value Unit RthJA 3001) K/W Thermal resistance junction to ambient air Tj 125 C Ambient operating temperature range Tamb - 55 to + 125 C Storage temperature range Tstg - 55 to + 150 C Junction temperature 1) Valid provided that electrodes are kept at ambient temperature Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Test condition Reverse breakdown voltage Leakage current1) 1) Forward voltage Symbol Min IR = 100 A (pulsed) Part V(BR) 30 VR = 25 V IR Unit 0.5 A V IR 100 A IF = 200 mA VF 1000 mV IF = 10 mA BAT42W-V VF 400 mV IF = 50 mA BAT42W-V VF 650 mV IF = 2 mA BAT43W-V VF 330 mV BAT43W-V VF 450 mV VR = 1 V, f = 1 MHz CD Reverse recovery time IF = 10 mA, IR = 10 mA, iR = 1 mA, RL = 100 trr Rectification efficieny RL = 15 k, CL = 300 pF, f = 45 MHz, VRF = 2 V v 1) Max VR = 25 V, Tj = 100 C IF = 15 mA Diode capacitance Typ. 260 7 pF 5 80 ns % Pulse test tp < 300 s, tp/T < 0.02 Typical Characteristics Tamb = 25 C, unless otherwise specified 1000 I F - Forward Current (mA) Ptot - Power Dissipation (mW) 250 200 150 100 50 0 0 18442 50 100 150 Figure 1. Admissible Power Dissipation vs. Ambient Temperature www.vishay.com 2 125 C - 40 C 10 25 C 1 0.1 0.01 200 Tamb - Ambient Temperature (C) 100 0 18443 200 400 600 800 1000 1200 VF - Instantaneous Forward Voltage (mV) Figure 2. Typical Forward Characteristics For technical questions within your region, please contact one of the following: Document Number 85661 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.6, 05-Aug-10 BAT42W-V, BAT43W-V Vishay Semiconductors 14 CD - Diode Capacitance (pF) IR - Reverse Leackage Current (A) 1000 125 C 100 100 C 75 C 10 50 C 1 25 C 0.1 12 10 8 6 4 2 0 0.01 0 10 20 30 40 VR - Reverse Voltage (V) 18444 0 50 18445 Figure 3. Typical Reverse Characteristics 5 10 15 20 25 30 VR - Reverse Voltage (V) Figure 4. Typical Capacitance vs. Reverse Voltage 0.10 (0.004) 0.15 (0.006) 8 0.45 (0.018) 0.25 (0.010) 0 to 0.2 (0.008) 1 (0.039) 1.35 (0.053) 0.1 (0.004) max. Package Dimensions in millimeters (inches): SOD-123 0.5 (0.020) ref. Cathode bar Mounting Pad Layout 2.85 (0.112) 2.55 (0.100) 0.85 (0.033) 2.5 (0.098) 0.85 (0.033) 3.55 (0.140) 1.7 (0.067) 3.85 (0.152) 1.40 (0.055) 0.45 (0.018) 0.65 (0.026) 0.85 (0.033) Rev. 4 - Date: 24. Sep. 2009 Document no.: S8-V-3910.01-001 (4) 17432 Document Number 85661 Rev. 1.6, 05-Aug-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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