0182998 ACRIAN INC GENERAL DESCRIPTION The TPR175 utilizes the most advanced design and process technologies. These features provide the most consistent and reliable chip and package combination designed, built and tested specifically for use in transponders/interrogators. * Gold thin-film metallization for proven highest MTTF * Surface passivation eliminates contamination * Eutectic die attach reduces junction temperature * Gold controlled-loop wire bonding for consistent performance * Low thermal-resistance packages ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25% Case Temperature 388 W Maximum Voltage and Current BVces Collector to Emitter Voltage 55V BVebo Emitter to Base Voltage 3.5V Ie Collector Current 125A Maximum Temperatures Storage Temperatura -65 to +150 C Operating JunctionTemperature +200 C POWER OUTPUT VS FREQUENCY 97D 01066 on. 4? de Moxsesis o0010b6 1 sas 1-33-15 _ AVIONICS L L1-C] [DIM [Millimeter] TOL | Inches [TOL 12:8 ; L3:E 45 (TYPICAL) E 250 =< ay = 200 B ee a. 150 ~ 3 oe 100 Vcc 50 V uu Pw = 10usec 3 Dia1% a, 20 Pins 25W Pk 1000 1050 1100 FREQUENCY (MHz) 490 Race Street, San Jose, CA 95126 Phone (408) 294-4200, TWX (910) 338-2172 |LREV A AUG 1987 Ewenny Rd., Bridgend, Mid Glamorgan, CF31 3LQ, United Kingdom, Phone (0656) 68021 Printed in USA 460182998 ACRIAN INC ELECTRICAL CHARACTERISTICS! 9? De Bfoisessa ooo1on7 3 fj T-33- 15 SYMBOL| CHARACTERISTICS TEST CONDITIONS MIN. TYP. MAX. UNITS Pout Power Output 175 Watts Pin Power Input fe 1090 MHz 25 Watts Pg Power Gain Voce 50 Volts 9.0 dB Ne Collector Efficiency Pulse Width= 10psec 40 % VSWR Load Mismatch Tolerance Duty Factors 1% oor BVebo Breakdown Voltage _ = Volt: {Emitter to Base) l= OA, lo= mA 3.5 ous BV Breakdown Voltage - Vv ces (Collector to Emitter) Vbex 0A, Ic= 20mA 55 olts h FE DC-Current Gain Ve= 5V, Io= 100mMA 10 Q jc Thermal Resistance 10 psec; 1% 0.45 | oOcp~y Note 1: Tc = +25C unless otherwise specitied THERMAL RESISTANCE SERIES INPUT IMPEDANCE VS VS PULSE WIDTH FREQUENCY (TYPICAL) uw Lagessee o | Le = +x hen b 5 a g g cc 5 a1 < mS, oe | = + ri R peste ae Jl Vec= 50 V = 3 sone) Pwe 10usec & Di= 1% o Po=175W 10 20 40 50 1000 1050 1100 U4 PULSE WIDTH ( sec) FREQUENCY (MHz) SPECIFICATIONS MAY BE SUBJECT TO CHANGE WITHOUT NOTICE0182998 ACRIAN INC 4? DE foLeesta ooowoba s ff. 1-33-15 SERIES LOAD IMPEDANCE VS FREQUENCY (TYPICAL) | Vec= 50 V < 5 LPw= 10 psec ~ Df= 1% w PO= 175W Pk = 4 x= x 38 pe e Pete tetas, u 2 o N A KX 1 = 1000 1050 1100 FREQUENCY (MHz) 1030/1090 MHz TEST AMPLIFIER 078 } | rl - a : Mater 1/32 Tel Fibergtass C, 45 335 Johanson & , 4 56 Johanson T C, aZptATC - C, 200 uf Electrolyte L, +226" tong L, 22610" tang