The S10917-35GT is a compact color sensor with a 3-channel photodiode mounted in one package, and sensitive to red (λ=590
to 680 nm), green (λ=470 to 600 nm) and blue (λ=390 to 530 nm) light. An infrared-cut fi lter is formed on the
photosensitive
area. This color sensor achieves superior cost performance and is suitable for monitoring brightness of RGB-LED backlight
LCD in hand-held devices such as cell phones.
Si photodiode
S10917-35GT
RGB color sensor integrated in small and thin
package
www.hamamatsu.com 1
Portable or mobile equipment
Small, thin package: 3.0 × 1.6 × 1.0 tmm
RGB-LED type LCD backlight monitors
3-channel (RGB) Si photodiode
Detectors for various light sources
Photosensitive area: 1 × 1 mm/3-segment (RGB)
Color detection
RoHS-compatible
Surface mount type
Electrical and optical characteristics (Ta=25 °C, per element)
Parameter Symbol Condition Min. Typ. Max. Unit
Spectral response range λ
Blue - 390 to 530 -
nmGreen - 470 to 600 -
Red - 590 to 680 -
Peak sensitivity wavelength λp
Blue - 460 -
nmGreen - 540 -
Red - 620 -
Photosensitivity S
Blue (λ=λp) 0.15 0.2 0.25
A/W
Green (λ=λp) 0.18 0.23 0.28
Red (λ=λp) 0.12 0.17 0.22
Dark current IDVR=1 V, all elements - 1 50 pA
Temperature coefficient of IDTCID - 1.12 - times/°C
Rise time tr VR=0 V, RL=1 kΩ, 10 to 90% - 0.1 0.5 μs
Terminal capacitance Ct VR=0 V, f=10 kHz 51225pF
Absolute maximum ratings
Parameter Symbol Value Unit
Reverse voltage VR max 10 V
Operating temperature Topr -25 to +85 °C
Storage temperature Tstg -40 to +85 °C
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
Infrared-cut fi lter formed on photosensitive area
Superior cost performance
Features Applications
Si photodiode S10917-35GT
2
Spectral response (typical example) Linearity
Wavelength (nm)
200 300 400 500 600 700 800 900 1000 1100
0
0.3
0.2
0.1
Photosensitivity (A/W)
Red
Green
Blue
(Ta=25 °C)
Illuminance (lx)
Short circuit current
100 1000
10 nA
100 nA
1 μA
10 μA
10000
(Typ. Ta=25 °C, VR=0 V, 2856 K)
Red
Green
Blue
KSPDB0295EA KSPDB0328EA
Dark current vs. reverse voltage
Reverse voltage (V)
Dark current
10 fA
100 pA
10 pA
1 pA
100 fA
10.10.01 10010
(Typ. Ta=25 °C)
KSPDB0252EA
Terminal capacitance vs. reverse voltage
Reverse voltage (V)
Terminal capacitance
100 fF
100 pF
10 pF
1 pF
10.1 10010
(Typ. Ta=25 °C)
KSPDB0253EA
Si photodiode S10917-35GT
3
Dimensional outline (uint: mm)
G
B
R
Anode (green)
Anode (blue)
Cathode common
Anode (red)
Tolerance unless otherwise noted: ±0.2
Chip position accuracy with respect to the
package dimensions marked *1
X, Y≤±0.3
Values in parentheses indicate reference value.
*2: Do not allow metal/conductive objects to contact the
part where the wiring is exposed.
Doing so may cause short circuits.
Electrode
Standard packing: reel (3000 pcs/reel)
(3 ×)
index mark
1.6*1
3.0*1
Photosensitive
surface
*2
Recommended land pattern
0.3
(0.29)
1.0
Photosensitive area
B
G
R
1.0
0.03 0.03
1.0
1.5
0.62 0.62
0.6
0.6
0.4
0.65 0.65
1.5
0.90.9
0.4
KSPDA0174ED
Measured example of temperature profile with our hot-air reflow oven for product testing
KSPDB0139EA
This product supports lead-free soldering. After unpacking, store it in an environment at a temperature of 30 °C or less and a
humidity of 60% or less, and perform soldering within 24 hours.
Time
Temperature
300 °C
230 °C
190 °C
170 °C
Preheat
60 ŵŰġ120 s
245 °C max.
Soldering
40 s max.
Si photodiode S10917-35GT
Cat. No. KSPD1078E06 May 2013 DN
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or
a suffix "(Z)" which means developmental specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product
use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
Information described in this material is current as of May, 2013.
4
Lineup of RGB color sensors
××
Type no. Type
Photosensitive area size
(mm)
Package
(mm)
Peak
sensitivity
wavelength
(nm)
Photosensitivity Photo
S9032-02
Photodiode
φ2.0
4 × 4.8 × 1.8t
6-pin
(filter 0.75t)
B 460 B 0.18 (A/W) [λ=460 nm]
G 540 G 0.23 (A/W) [λ=540 nm]
R 620 R 0.16 (A/W) [λ=620 nm]
S9702
Photodiode
3 × 4 × 1.3t
4-pin
(filter 0.75t)
B 460 B 0.18 (A/W) [λ=460 nm]
G 540 G 0.23 (A/W) [λ=540 nm]
R 620 R 0.16 (A/W) [λ=620 nm]
S10917-35GT
Photodiode
3 × 1.6 × 1.0t
COB
(on-chip filter)
B 460 B 0.2 (A/W) [λ=460 nm]
G 540 G 0.23 (A/W) [λ=540 nm]
R 620 R 0.17 (A/W) [λ=620 nm]
S10942-01CT
Photodiode
3 × 1.6 × 1.0t
COB
(on-chip filter)
*
*
B 0.21 (A/W) [λ=460 nm]
G 0.25 (A/W) [λ=540 nm]
R 0.45 (A/W) [λ=640 nm]
S9706 Digital
photo IC
4 × 4.8 × 1.8t
6-pin
(filter 0.75t)
B 465
woL
B
0.21 (LSB/lx)
hgiH
B
1.9 (LSB/lx)
G 540 G
0.45 (LSB/lx)
G
4.1 (LSB/lx)
R 615
460
530
615
855
R
0.64 (LSB/lx)
R
5.8 (LSB/lx)
S11012-01CR
S11059-02DT
Digital
I2C compatible
color sensor
photo IC
3.43 × 3.8 × 1.6t
COB
(on-chip filter)
woLLow
B
0.3 (LSB/lx)
hgiHHigh
B
2.6 (LSB/lx)
G
0.6 (LSB/lx)
G
5.3 (LSB/lx)
R
B
G
R
IR IR
B
G
R
1.4 (LSB/lx)
R
12.9 (LSB
4.4 (count/lx)
8.3 (count/lx)
11.2 (count/lx)
3.0 (count/lx)
44.8 (count/lx)
85.0 (count/lx)
117.0 (count/lx)
30.0 (count/lx)
/lx)
* Refer to "Spectral response" of each datasheet.
B
G
R
IR
0.54 × 1.1
3 × 4.2 × 1.3t
10-pin
(on-chip filter)
460
530
615
855
S11059-01WT
I2C interface-
compatible
color sensor
Low
High
B
G
R
IR IR
B
G
R
3.35 (count/lx)
7.61 (count/lx)
9.48 (count/lx)
1.66 (count/lx)
31.7 (count/lx)
76.2 (count/lx)
94.5 (count/lx)
15.3 (count/lx)
B
G
R
IR
1.22 × 0.56
1.68 × 1.18 × 0.58t
WL-CSP
(on-chip filter)
1.2 × 1.2
1.2 × 1.2
1.0 × 1.0
1.0 × 1.0
1.0 × 1.0
