DATA SHEET
The information in this document is subject to change without notice.
© 1988
Document No. P11309EJ5V0DS00 (5th edition)
Date Published December 1998 NS CP (K)
Printed in Japan
PHOTOCOUPLER
PS2705-1,PS2705-2,PS2705-4
HIGH ISOLATION VOLTAGE
AC INPUT RESPONSE TYPE
SOP MULTI PHOTOCOUPLER
The mark •
••
• shows major revised poi nts.
−NEPOCTM Series−
DESCRIPTION
The PS2705-1, PS2705-2, PS2705-4 are optically coupled isolators containing two GaAs light emitting diodes and
an NPN silicon phototransistor.
These packages are SOP (Small Outline Package) type and have shield effect to cut off ambient light.
They are designed for high density mounting applications.
FEATURES
• AC input response
• High isolation voltage (BV = 3 750 Vr.m.s.)
• High current transfer ratio (CTR = 100 % TYP.)
• SOP (Small Outline Package) type
• High-speed switching (tr = 3
µ
s TYP., tf = 5
µ
s TYP.)
• Ordering number of taping product (Only-1 type) : PS2705-1-E3, E4, F3, F4
• UL approved: File No. E72422 (S)
• VDE0884 approved (Option)
APPLICATIONS
•Hybrid IC
• Telephone/FAX
• FA/OA equipment
• Programmable logic controllers
• Power supply
ORDERING INFORMATION
Part Number Package Safety Standard A pproval
PS2705-1 4-pin SOP Standard products
PS2705-2 8-pin SOP • UL approved
PS2705-4 16-pin SOP
PS2705-1-V 4-pin SOP VDE0884 approved products (Option)
PS2705-2-V 8-pin SOP
PS2705-4-V 16-pin SOP
Data Sheet P11309EJ5V0DS00
2
PS2705-1,PS2705-2,PS2705-4
PACKAGE DIMENSIONS (in millimeters)
PS2705-1
4.5 MAX.
7.0±0.3
4.4 1.3
0.5±0.3
0.15
+0.10
–0.05
2.0
0.1±0.1
2.3 MAX.
2.54 1.2 MAX.
0.4
+0.10
–0.05
0.25 M
PS2705-2
9.3 MAX.
2.0
0.1±0.1
2.3 MAX.
2.54 1.2 MAX.
0.4
+0.10
–0.05
0.25 M
7.0±0.3
4.4 1.3
0.5±0.3
0.15
+0.10
–0.05
PS2705-4
19.46 MAX.
2.0
0.1±0.1
2.3 MAX.
2.54 1.2 MAX.
0.4
+0.10
–0.05
0.25 M
7.0±0.3
4.4 1.3
0.5±0.3
0.15
+0.10
–0.05
TOP VIEW
1. Anode, Cathode
2. Cathode, Anode
3. Emitter
4. Collector
43
12
TOP VIEW
1234
8765 1. 3. Anode, Cathode
2. 4. Cathode, Anode
5. 7. Emitter
6. 8. Collector
TOP VIEW
1. 3. 5. 7. Anode, Cathode
2. 4. 6. 8. Cathode, Anode
9. 11. 13. 15. Emitter
10. 12. 14. 16. Collector
16 15 14 13 12 11 10 9
12345678
Data Sheet P11309EJ5V0DS00 3
PS2705-1,PS2705-2,PS2705-4
ABSOLUTE MAXIMUM RATINGS (TA = 25 °
°°
°C, unless otherwise specified)
Ratings
Parameter Symbol PS2705-1 PS2705-2,
PS2705-4 Unit
Diode Forward Current (DC) IF± 50 mA
Power Dissipati on Derating
∆
PD/°C0.8mW/
°
C
Power Dissipati on PD80 mW/ch
Peak Forward Current*1 IFP ± 1A
Transistor Collector to Emitter Voltage VCEO 40 V
Emitter to Collector Voltage VECO 6V
Collector Current IC80 mA/ch
Power Dissipati on Derating
∆
PC/°C 1.5 1.2 mW/°C
Power Dissipati on PC150 120 mW/ch
Isolat i on Voltage*2 B V 3 750 Vr.m. s .
Operating Am bi ent Tem perature TA–55 to +100 °C
Storage Temperat ure Tstg –55 to +150 °C
*1 PW = 100
µ
s, Duty Cycle = 1 %
*2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output
Data Sheet P11309EJ5V0DS00
4
PS2705-1,PS2705-2,PS2705-4
ELECTRICAL CHARACTERISTICS (TA = 25 °
°°
°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Diode Forward Voltage VFIF = ± 5 mA 1.1 1.4 V
Terminal Capaci tance CtV = 0 V, f = 1 MHz 60 pF
Transistor Collecto r to Emitte r
Current ICEO IF = 0 mA, VCE = 40 V 100 nA
Coupled Current Transfer Ratio
(IC/IF)*1 CTR IF = ± 5 mA, VCE = 5 V 50 100 300 %
CTR Ratio CTR1/
CTR2
IF = ± 5 mA, VCE = 5 V 0.3 1.0 3.0
Collecto r Sa tu r a tio n
Voltage VCE (sat) IF = ± 10 mA, I C = 2 mA 0.3 V
Isolat i on Resistance RI-O VI-O = 1 kVDC 1011 Ω
Isolat i on Capacitance CI-O V = 0 V, f = 1 MHz 0.4 pF
Rise Time *2 trVCC = 5 V, I C = 2 mA, RL = 100 Ω3
µ
s
Fall Time *2 tf5
*1 CTR rank (only PS2705-1)
M: 50 to 150 (%)
L: 100 to 300 (%)
N: 50 to 300 (%)
*2 CTR1 = IC1/IF1, CTR2 = IC2/IF2
I
F1
I
F2
I
C1
I
C2
V
CE
*3 Test circuit for switching time
V
CC
V
OUT
R
L
= 100 Ω
PW = 100 s
Duty Cycle = 1/10
µ
I
F
Pulse Input
50 Ω
In monitor
Data Sheet P11309EJ5V0DS00 5
PS2705-1,PS2705-2,PS2705-4
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified)
100
50
25
0
75
25 50 75 100
Ambient Temperature T
A
(˚C)
Diode Power Dissipation P
D
(mW)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE 200
150
100
50
025 50 75 100
Ambient Temperature T
A
(˚C)
Transistor Power Dissipation P
C
(mW)
TRANSISTOR POWER DISSIPATION vs.
AMBIENT TEMPERATURE
PS2705-1
1.5 mW/˚C
PS2705-2,
PS2705-4
1.2 mW/˚C
100
0.1
1
0.01
10
0.6 1.0 1.4 1.60.8 1.2
Forward Voltage V
F
(V)
Forward Current I
F
(mA)
FORWARD CURRENT vs.
FORWARD VOLTAGE
+25 ˚C
0 ˚C
–25 ˚C
–55 ˚C
T
A
= +100 ˚C
+75 ˚C
+50 ˚C
10 000
0.1
100
1 000
10
1
–60 0 40 80–40 –20 20 60 100
Ambient Temperature T
A
(˚C)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
Collector to Emitter Dark Current I
CEO
(nA)
V
CE
= 40 V
24 V
10 V
50
5
0.1
10
0.5
0.2
20
2
1
0.2 0.6 1.00.0 0.4 0.8
Collector Saturation Voltage V
CE (sat)
(V)
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
I
F
= 25 mA
10 mA
5 mA
2 mA
1 mA
FORWARD CURRENT vs.
FORWARD VOLTAGE
Forward Voltage V
F
(V)
Forward Current I
F
(mA)
80
60
40
20
0
–40
–60
–80
–20
–1.2 0 0.4 1.2 1.6–1.6 –0.8 –0.4 0.8
Data Sheet P11309EJ5V0DS00
6
PS2705-1,PS2705-2,PS2705-4
1.2
0.6
0.0
0.8
1.0
0.4
0.2
02550 100–50 –25 75
Ambient Temperature T
A
(˚C)
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
Normalized Current Transfer Ratio CTR
Normalized to 1.0
at T
A
= 25 ˚C,
I
F
= 5 mA, V
CE
= 5 V
,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,
300
250
150
50
0
200
100
0.05 0.5 5 50
0.1 1 10
Forward Current I
F
(mA)
Current Transfer Ratio CTR (%)
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
V
CE
= 5 V
Load Resistance R
L
(Ω)
SWITCHING TIME vs.
LOAD RESISTANCE
Switching Time t ( s)
µ
V
CC
= 5 V,
I
C
= 2 mA
100
0.5
0.1
50
10
5
1
50 200 1 k 2 k
100 500
Load Resistance R
L
(Ω)
SWITCHING TIME vs.
LOAD RESISTANCE
Switching Time t ( s)
µ
t
on
t
off
t
d
t
s
1.2
0.4
0.0
0.8
0.6
0.2
1.0
20 500
5 10 2002 50 100
Frequency f (kHz)
Normalized Gain G
V
FREQUENCY RESPONSE
R
L
= 1 kΩ
510 Ω
300 Ω
100 Ω
I
F
= 5 mA, V
CC
= 5 V,
CTR = 169 %
1 000
0.5
100
500
10
1
50
5
0.1
100 1 k 10 k 50 k500 5 k 100 k
t
f
t
s
t
r
t
d
50
20
0
40
30
10
61024 8
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
I
F
= 30 mA
20 mA
10 mA
15 mA
5 mA
Data Sheet P11309EJ5V0DS00 7
PS2705-1,PS2705-2,PS2705-4
1.2
1.0
0.0
0.4
0.2
0.8
0.6
10
2
10
3
110
4
10
5
10
6
Time (Hr)
LONG TERM CTR DEGRADATION
CTR (Relative Value)
I
F
= 1 mA, T
A
= 25 ˚C
I
F
= 5 mA, T
A
= 25 ˚C
I
F
= 20 mA, T
A
= 25 ˚C
I
F
= 20 mA, T
A
= 60 ˚C
Remark The graphs indicate nominal characteristics.
Data Sheet P11309EJ5V0DS00
8
PS2705-1,PS2705-2,PS2705-4
TAPING SPECIFICATIONS (in millimeters)
Outline and Dimensions (Tape)
1.55±0.1
2.0±0.1
4.0±0.1 1.55±0.1
1.75±0.1
5.5±0.1
12.0±0.2
4.6±0.1
2.4±0.1
7.4±0.1
0.3
8.0±0.1
Taping Direction
PS2705-1-E3
PS2705-1-F3 PS2705-1-E4
PS2705-1-F4
Outline and Dimensions (Reel)
Packing: PS2705-1-E3, E4 900 pcs/reel
PS2705-1-F3, F4 3 500 pcs/reel
1.5±0.5
1
2
0
˚
2.0±0.5
6.0±1
21.0±0.8
φ
6
0
˚
12.4+2.0
–0.0
18.4 MAX.
1.5±0.1 1.5±0.1
66
φ
13.0±0.5
φ
PS2705-1-E3, E4: 178
PS2705-1-F3, F4: 330
φ
φ
Data Sheet P11309EJ5V0DS00 9
PS2705-1,PS2705-2,PS2705-4
RECOMMENDED SOLDERING CONDITIONS
(1) Infrared reflow soldering
• Peak reflow temperature 235 °C (package surface temperature)
• Time of temperature higher than 210 °C 30 seconds or less
• Number of reflows Three
• Flux Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt % is recommended.)
60 to 90 s
(preheating)
210 ˚C
120 to 160 ˚C
Package Surface Temperature T (˚C)
Time (s)
(heating)
to 10 s
to 30 s
235 ˚C (peak temperature)
Recommended Temperature Profile of Infrared Reflow
Peak temperature 235 ˚C or below
(2) Dip soldering
• Temperature 260 °C or below (molten solder temperature)
• Time 10 seconds or less
• Number of times One
• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of
0.2 Wt % is recommended.)
Data Sheet P11309EJ5V0DS00
10
PS2705-1,PS2705-2,PS2705-4
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884)
Parameter Symbol Speck Unit
Applic at i on classification (DI N V DE 0109)
for rated li ne v ol tages ≤ 300 Vr.m.s . IV
for rated li ne v ol tages ≤ 600 Vr.m.s . III
Climati c test clas s (DIN IEC 68 Teil 1/09.80) 55/100/21
Dielect ri c strength
Maximum operating isolation voltage UIORM 710 Vpeak
Test v ol t age (partial discharge test, procedure a for type test and random tes t) Upr 850 Vpeak
Upr = 1.2 × UIORM, Pd < 5 pC
Test v ol t age (partial discharge test, procedure b for random t est)
Upr = 1.6 × UIORM, Pd < 5 pC Upr 1 140 Vpeak
Highest perm i ssible overvoltage UTR 6 000 Vpeak
Degree of pollut i on (DI N V DE 0109) 2
Clearance dis tance > 5 mm
Creepage distance > 5 mm
Comparativ e tracki ng i ndex (DIN IE C 112/VDE 0303 part 1) CTI 175
Material group (DIN VDE 0109) III a
Storage tem perature range Tstg –55 to +150 °C
Operating tem perat ure range TA–55 to +100 °C
Isolat i on resistance, m i ni m um value
VIO = 500 V dc at T A = 25 °CRis MIN.10
12 Ω
VIO = 500 V dc at T A MAX. at least 100 °CRis MIN.10
11 Ω
Safety maximum ratings
(maximum permissible in case of fault, see thermal derat i ng curve)
Package temperature Tsi 150 °C
Current (input c urrent IF, P s i = 0) Isi 200 mA
Power (output or total power dissipat i on) Psi 300 mW
Isolat i on resistance
VIO = 500 V dc at T A = 175 °C (Tsi) Ris MI N. 109Ω
Data Sheet P11309EJ5V0DS00 11
PS2705-1,PS2705-2,PS2705-4
[MEMO]
PS2705-1,PS2705-2,PS2705-4
CAUTION
Within this device there exists GaAs (Gallium Arsenide) material which is a
harmful substance if ingested. Please do not under any circumstances break the
hermetic seal.
NEPOC is a trademark of NEC Corporation.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5
