DSEP60-12AR
Low Loss and Soft Recovery
High Performance Fast Recovery Diode
Single Diode
HiPerFRED
13
Part number
DSEP60-12AR
Backside: isolated
FAV
rr
t ns40
RRM
60
1200
=
V=V
I=A
Features / Advantages: Applications: Package:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
ISOPLUS247
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Soldering pins for PCB mounting
● Backside: DCB ceramic
● Reduced weight
● Advanced power cycling
● Isolation Voltage: V~
3600
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
Terms Conditions of usage:
IXYS reserves the right to change limits, conditions and dimensions. 20161005aData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
DSEP60-12AR
ns
13 A
T
VJ
= °C
reverse recovery time
A20
80
220 ns
I
RM
max. reverse recovery current
I
F
= A;60 25
T = 100°C
VJ
-di
F
= A/µs200/dt
t
rr
V
R
= V600 T
VJ
= °C25
T = 100°C
VJ
V = V
Symbol
Definition
Ratings
typ.
max.
I
R
IA
V
F
2.66
R0.65 K/W
R
min.
60
V
RSM
650T = 25°C
VJ
T = °C
VJ
mA2.5V = V
R
T = 25°C
VJ
I = A
F
T = °C
C
85
P
tot
230 WT = 25°C
C
RK/W
60
1200
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions
Unit
3.18
T = 25°C
VJ
150
V
F0
1.08T = °C
VJ
175
r
F
9.4
mΩ
1.81T = °C
VJ
I = A
F
60 2.40
I = A
F
120
I = A
F
120
threshold voltage
slope resistance for power loss calculation only
µA
150
V
RRM
1200
max. repetitive reverse blocking voltage
T = 25°C
VJ
C
J
30
junction capacitance
V = V600 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current
V = 0 V
R
T = °C
VJ
175
500 A
1200
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Fast Diode
1200
0.25
IXYS reserves the right to change limits, conditions and dimensions. 20161005aData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
DSEP60-12AR
Ratings
Pr
odu
c
t
M
a
rk
in
g
Date Code
Part No.
Logo
IXYS
abcd
Assembly
Code
Zyyww
Assembly Line
ISOPLUS®
XXXXXXXXX
DHG60I1200HA TO-247AD (2) 1200
Package
T
op
°C
T
VJ
°C175
virtual junction temperature
-55
Weight g6
Symbol
Definition
typ.
max.
min.
Conditions
operation temperature
Unit
F
C
N120
mounting force with clip
20
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
5.4
4.1
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current
70 A
per terminal
150-55
terminal to terminal
DSEP60-12B TO-247AD (2) 1200
ISOPLUS247
Similar Part Package Voltage class
DSEP60-12A TO-247AD (2) 1200
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
DSEP60-12AR 481939Tube 30DSEP60-12ARStandard
3600
ISOL
T
stg
°C150
storage temperature
-55
3000
threshold voltage
V1.08 mΩ
V
0 max
R
0 max
slope resistance *
6.8
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Fast
Diode
175°C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20161005aData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
DSEP60-12AR
E
1 2 3
R
D
L
L1
Q
2x b 2x b2
b4
W
A
A2
c
A1 e
E1
D1
D2
D3
Die konvexe Form des Substrates ist typ. < 0.04 mm über der
Kunststoffoberfläche der Bauteilunterseite
The convex bow of substrate is typ. < 0.04 mm over plastic
surface level of device bottom side
Die Gehäuseabmessungen entsprechen dem Typ TO-247 AD
gemäß JEDEC außer Schraubloch und L
max.
This drawing will meet all dimensions requiarement of JEDEC
outline TO-247 AD except screw hole and except L
max.
min max min max
A 4.83 5.21 0.190 0.205
A1 2.29 2.54 0.090 0.100
A2 1.91 2.16 0.075 0.085
b 1.14 1.40 0.045 0.055
b2 1.91 2.20 0.075 0.087
b4 2.92 3.24 0.115 0.128
c 0.61 0.83 0.024 0.033
D 20.80 21.34 0.819 0.840
D1 15.75 16.26 0.620 0.640
D2 1.65 2.15 0.065 0.085
D3 20.30 20.70 0.799 0.815
E 15.75 16.13 0.620 0.635
E1 13.21 13.72 0.520 0.540
e 10.90 BSC 0.429 BSC
L 19.81 20.60 0.780 0.811
L1 3.81 4.38 0.150 0.172
Q 5.59 6.20 0.220 0.244
R 4.25 5.50 0.167 0.217
W - 0.10 - 0.004
Dim.
Millimeter Inches
13
Outlines ISOPLUS247
IXYS reserves the right to change limits, conditions and dimensions. 20161005aData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
DSEP60-12AR
200 600 10000 400 800
160
200
240
280
1 10 100 1000 10000
0.0
0.2
0.4
0.6
0.8
0 40 80 120 160
0.0
0.5
1.0
1.5
2.0
K
f
T
VJ
[°C]
0 200 400 600 800 1000
0
40
80
120
0.0
0.4
0.8
1.2
V
FR
[V]
200 600 10000 400 800
0
20
40
60
80
1
0
0
100 1000
0
2
4
6
8
10
0 1 2 3
0
20
40
60
80
1
00
I
R
[A]
Q
r
[µC]
I
F
[
A]
V
F
[V] -di
F
/dt [A/µs]
t
r
[ns]
Z
thJC
[K/W]
-di
F
/dt [A/µs]
-di
F
/dt [A/µs] -di
F
/dt [A/µs]
t
rr
[µs]
t [ms]
I
RM
Q
r
V
FR
t
rr
Fig. 1 Forward current
I
F
versus V
F
Fig. 2 Typ. reverse recov. charge
Q
r
versus -di
F
/dt Fig. 3 Typ. peak reverse current
I
RM
versus -di
F
/dt
Fig. 4 Typ. dynamic parameters
Q
r
, I
RM
versus T
VJ
Fig. 5 Typ. recovery time
t
rr
versus -di
F
/dt Fig. 6 Typ peak forward voltage
V
FR
and t
fr
versus di
F
/dt
Fig. 7 Transient thermal resistance junction to case
Constants for Z
thJC
calculation:
i R
thi
(K/W) t
i
(s)
1 0.0500 0.0020
2 0.1000 0.0050
3 0.2000 0.0400
4 0.3000 0.1800
T
VJ
= 150°C
100°C
25°C
T
VJ
= 100°C
V
R
= 600 V
I
F
= 120 A
60 A
30 A
T
VJ
= 100°C
V
R
= 600 V
I
F
= 120 A
60 A
30 A
T
VJ
= 100°C
V
R
= 600 V
I
F
= 120 A
60 A
30 A
T
VJ
= 100°C
I
F
= 60 A
Fast Diode
IXYS reserves the right to change limits, conditions and dimensions. 20161005aData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved