DSEP60-12AR HiPerFRED VRRM = 1200 V I FAV = 60 A t rr = 40 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP60-12AR Backside: isolated 3 1 Features / Advantages: Applications: Package: ISOPLUS247 Planar passivated chips Very low leakage current Very short recovery time Improved thermal behaviour Very low Irm-values Very soft recovery behaviour Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode Rectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Isolation Voltage: 3600 V~ Industry standard outline RoHS compliant Epoxy meets UL 94V-0 Soldering pins for PCB mounting Backside: DCB ceramic Reduced weight Advanced power cycling Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. (c) 2016 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20161005a DSEP60-12AR Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C VRRM max. repetitive reverse blocking voltage TVJ = 25C 1200 IR reverse current, drain current VR = 1200 V TVJ = 25C 650 A VR = 1200 V TVJ = 150C 2.5 mA IF = TVJ = 25C 2.66 V 3.18 V 1.81 V VF forward voltage drop 60 A min. typ. I F = 120 A IF = TVJ = 150 C 60 A I F = 120 A I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case TC = 85 C rectangular max. Unit 1200 V V 2.40 V T VJ = 175 C 60 A TVJ = 175 C 1.08 V 9.4 m d = 0.5 for power loss calculation only 0.65 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45C VR = 600 V f = 1 MHz TVJ = 25C 30 pF TVJ = 25 C 13 A TVJ = 100 C 20 A TVJ = 25 C 80 ns TVJ = 100 C 220 ns CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time 0.25 TC = 25C IF = IXYS reserves the right to change limits, conditions and dimensions. (c) 2016 IXYS all rights reserved 60 A; VR = 600 V -di F /dt = 200 A/s 230 500 Data according to IEC 60747and per semiconductor unless otherwise specified W A 20161005a DSEP60-12AR Package Ratings ISOPLUS247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 70 Unit A -55 175 C -55 150 C 150 C 6 Weight FC 20 mounting force with clip d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL t = 1 minute 120 N terminal to terminal 5.4 mm terminal to backside 4.1 mm 3600 V 3000 V t = 1 second isolation voltage g 50/60 Hz, RMS; IISOL 1 mA Product Marking IXYS Logo ISOPLUS(R) XXXXXXXXX Zyyww Part No. Assembly Line abcd Assembly Code Date Code Ordering Standard Ordering Number DSEP60-12AR Similar Part DSEP60-12A DHG60I1200HA DSEP60-12B Equivalent Circuits for Simulation I V0 R0 Marking on Product DSEP60-12AR Package TO-247AD (2) TO-247AD (2) TO-247AD (2) * on die level Delivery Mode Tube Code No. 481939 Voltage class 1200 1200 1200 T VJ = 175 C Fast Diode V 0 max threshold voltage 1.08 V R0 max slope resistance * 6.8 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2016 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20161005a DSEP60-12AR Outlines ISOPLUS247 A2 E1 E D2 A Q Dim. D D3 D1 R A A1 A2 b b2 b4 c D D1 D2 D3 E E1 e L L1 Q R W 2 3 b4 L L1 1 2x b2 c 2x b Inches min max 0.190 0.205 0.090 0.100 0.075 0.085 0.045 0.055 0.075 0.087 0.115 0.128 0.024 0.033 0.819 0.840 0.620 0.640 0.065 0.085 0.799 0.815 0.620 0.635 0.520 0.540 0.429 BSC 0.780 0.811 0.150 0.172 0.220 0.244 0.167 0.217 0.004 Die konvexe Form des Substrates ist typ. < 0.04 mm uber der Kunststoffoberflache der Bauteilunterseite The convex bow of substrate is typ. < 0.04 mm over plastic surface level of device bottom side e A1 Die Gehauseabmessungen entsprechen dem Typ TO-247 AD gema JEDEC auer Schraubloch und Lmax. This drawing will meet all dimensions requiarement of JEDEC outline TO-247 AD except screw hole and except Lmax. W 3 IXYS reserves the right to change limits, conditions and dimensions. (c) 2016 IXYS all rights reserved Millimeter min max 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.20 2.92 3.24 0.61 0.83 20.80 21.34 15.75 16.26 1.65 2.15 20.30 20.70 15.75 16.13 13.21 13.72 10.90 BSC 19.81 20.60 3.81 4.38 5.59 6.20 4.25 5.50 0.10 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20161005a DSEP60-12AR Fast Diode 100 10 TVJ = 150C 100C 25C 80 100 TVJ = 100C VR = 600 V TVJ = 100C VR = 600 V 8 80 IF = 120 A 60 A 30 A IF 60 Qr 6 [A] 40 [C] 4 [A] 40 20 2 20 0 0 1 2 IR 60 0 100 3 IF = 120 A 60 A 30 A 0 1000 0 200 -diF /dt [A/s] VF [V] Fig. 1 Forward current IF versus VF 280 600 800 1000 Fig. 3 Typ. peak reverse current IRM versus -diF /dt Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt 2.0 400 -diF /dt [A/s] 120 TVJ = 100C VR = 600 V 1.2 TVJ = 100C IF = 60 A 1.5 240 tr Kf 1.0 80 IF = 120 A 60 A 30 A VFR [ns] trr [s] [V] 200 IRM 0.8 40 0.4 0.5 Qr trr VFR 0.0 160 0 40 80 120 160 0 0 TVJ [C] 200 400 600 800 1000 0 -diF /dt [A/s] Fig. 4 Typ. dynamic parameters Qr, IRM versus TVJ 200 400 600 800 0.0 1000 -diF /dt [A/s] Fig. 6 Typ peak forward voltage VFR and tfr versus diF /dt Fig. 5 Typ. recovery time trr versus -diF /dt 0.8 0.6 ZthJC Constants for ZthJC calculation: 0.4 [K/W] 0.2 i Rthi (K/W) ti (s) 1 0.0500 0.0020 2 0.1000 0.0050 3 0.2000 0.0400 4 0.3000 0.1800 0.0 1 10 100 1000 10000 t [ms] Fig. 7 Transient thermal resistance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2016 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20161005a