June 2008 FDJ1032C Complementary PowerTrench(R) MOSFET Features General Description Q1 -2.8 A, -20 V. Q2 RDS(ON) = 160 m @ VGS = -4.5 V RDS(ON) = 230 m @ VGS = -2.5 V RDS(ON) = 390 m @ VGS = -1.8 V RDS(ON) = 90 m @ VGS = 4.5 V RDS(ON) = 130 m @ VGS = 2.5 V 3.2 A, 20 V. These N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Low gate charge High performance trench technology for extremely low RDS(ON) FLMP SC75 package: Enhanced thermal performance in industry-standard package size RoHS Compliant Applications DC/DC converter Load switch Motor Driving Bottom Drain Contact S2 S1 4 3 G1 Q2 (N) 2 5 S1 S2 1 6 G2 Q1 (P) Bottom Drain Contact Absolute Maximum Ratings TA = 25C unless otherwise noted Symbol Parameter Q1 Q2 Units VDSS Drain-Source Voltage -20 20 V VGSS Gate-Source Voltage 8 12 V ID Drain Current -2.8 3.2 A -12 12 - Continuous (Note 1a) - Pulsed PD TJ, TSTG Power Dissipation for Single Operation (Note 1a) 1.5 (Note 1b) 0.9 Operating and Storage Junction Temperature Range W -55 to +150 C C/W Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 80 RJC Thermal Resistance, Junction-to-Case (Note 1a) 5 (c)2008 Fairchild Semiconductor Corporation FDJ1032C Rev. B2(W) 1 www.fairchildsemi.com FDJ1032C Complementary PowerTrench(R) MOSFET F Device Marking Device Reel Size Tape width Quantity .H FDJ1032C 7" 8mm 3000 units Electrical Characteristics Symbol Parameter Test Conditions Type Min Q1 Q2 -20 20 Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 A VGS = 0 V, ID = 250 A V BVDSS TJ Breakdown Voltage Temperature ID = -250 A, Referenced to 25C Coefficient ID = 250 A, Referenced to 25C Q1 Q2 IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V VDS = 16 V, VGS = 0 V Q1 Q2 -1 1 A IGSS Gate-Body Leakage VGS = 8 V, VDS = 0 V VGS = 12 V, VDS = 0 V Q1 Q2 100 100 nA -1.5 1.5 V mV/C -13 13 On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 A VDS = VGS, ID = 250 A Q1 Q2 VGS(th) TJ Gate Threshold Voltage Temperature Coefficient ID = -250 A, Referenced to 25C ID = 250 A, Referenced to 25C Q1 Q2 3 -3 RDS(on) Static Drain-Source On-Resistance VGS = -4.5 V, ID = -2.8 A VGS = -2.5 V, ID = -2.2 A VGS = -1.8 V, ID = -1.7 A VGS = -4.5 V, ID =2.8A, TJ = 125C Q1 108 163 283 150 160 230 390 238 VGS = 4.5 V, ID = 3.2 A VGS = 2.5 V, ID = 2.7 A VGS = 4.5 V, ID = 3.2, TJ = 125C Q2 70 100 83 90 130 132 VDS = -5 V, ID = - 2.8 A VDS = 5 V, ID = 3.2 A Q1 Q2 5 7.5 S Q1: VDS = -10 V, VGS = 0 V, f = 1.0 MHz Q1 Q2 290 200 pF Q1 Q2 55 50 pF Q1 Q2 29 30 pF VGS = Q1 Q2 14 3 Q1: VDD = -10 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 Q1 Q2 8 7 16 14 ns Q1 Q2 13 8 23 16 ns Q1 Q2 13 11 23 20 ns Q1 Q2 18 2 32 4 ns gFS Forward Transconductance -0.4 0.6 -0.8 1.0 mV/C m Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Q2: VDS = 10 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Q2: VDD = 10 V, ID = 1 A, VGS = 4.5V, RGEN = 6 2 FDJ1032C Rev. B2(W) www.fairchildsemi.com FDJ1032C Complementary PowerTrench(R) MOSFET Package Marking and Ordering Information Symbol Parameter Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions Type Q1: VDS = -10 V, ID = -2.8 A, VGS= -4.5V Q1 Q2 3 2 Q1 Q2 0.65 0.4 nC Q1 Q2 0.75 1.0 nC Q2: VDS = 10 V, ID = 3.2 A, VGS = 4.5 V Min Typ Max Units 4 3 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current Q1 Q2 -1.25 1.25 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.3 A (Note 2) VGS = 0 V, IS = 1.3 A (Note 2) Q1 Q2 -0.8 0.8 -1.2 1.2 V trr Diode Reverse Recovery Time IF = -4.2A, dIF/dt = 100 A/s IF = 5.9A, dIF/dt = 100 A/s Q1 Q2 14 11 nS Qrr Diode Reverse Recovery Charge IF = -4.2A, dIF/dt = 100 A/s IF = 5.9A, dIF/dt = 100 A/s Q1 Q2 4 2.5 nC Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 80C/W when mounted on a 1in2 pad of 2 oz copper (Single Operation). b) 140C/W when mounted on a minimum pad of 2 oz copper (Single Operation). Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3 FDJ1032C Rev. B2(W) www.fairchildsemi.com FDJ1032C Complementary PowerTrench(R) MOSFET Electrical Characteristics (Continued) 2.6 10 VGS=-4.5V -3.5V R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE -3.0V -ID, DRAIN CURRENT (A) 8 -2.5V 6 4 -2.0V -1.8V 2 0 2.4 V GS=-1.8V 2.2 2 -2.0V 1.8 1.6 -2.5V 1.4 -3.0V -3.5V 1.2 -4.5V 0.8 0 1 2 3 4 5 0 2 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) 6 8 10 -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.5 0.5 I D = -1.4A I D = -2.8A VGS = -4.5V 1.4 RDS(ON) , ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -4.0V 1 1.3 1.2 1.1 1 0.9 0.8 0.44 0.38 0.32 TA = 125C 0.26 0.2 0.14 TA = 25C 0.7 0.08 -50 -25 0 25 50 75 100 125 150 1.5 2 2.5 Figure 3. On-Resistance Variation with Temperature. 3.5 4 4.5 5 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 5 -IS, REVERSE DRAIN CURRENT (A) VDS = -5V 25 C T A = -55C -ID , DRAIN CURRENT (A) 3 -VGS , GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (C) 4 125 C 3 2 1 VGS=0V 10 1 TA = 125C 0.1 25C 0.01 -55C 0.001 0.0001 0 0.5 1 1.5 2 0 2.5 Figure 5. Transfer Characteristics. 0.4 0.6 0.8 1 1.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 4 FDJ1032C Rev. B2(W) 0.2 -V SD, BODY DIODE FORWARD VOLTAGE (V) -VGS , GATE TO SOURCE VOLTAGE (V) www.fairchildsemi.com FDJ1032C Complementary PowerTrench(R) MOSFET Typical Characteristics : Q1 500 ID = -2.8A VDS = -5V f = 1 MHz VGS = 0 V -10V 400 4 -15V CAPACITANCE (pF) -V GS, GATE-SOURCE VOLTAGE (V) 5 3 2 CISS 300 200 COSS 1 100 0 0 CRSS 0 0.5 1 1.5 2 2.5 3 3.5 0 5 Q g, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 15 20 Figure 8. Capacitance Characteristics. 10 P(pk), PEAK TRANSIENT POWER (W) 100 -ID, DRAIN CURRENT (A) 10 -V DS , DRAIN TO SOURCE VOLTAGE (V) 100 s 10 RDS(ON) LIMIT 1ms 10ms 1s 1 DC 100ms 10s VGS = -4.5V SINGLE PULSE RJA = 140 o C/W 0.1 T A = 25 oC 0.1 1 10 6 4 2 0 0.001 0.01 100 SINGLE PULSE RJA = 140C/W T A = 25C 8 0.01 0.1 1 10 100 -VDS , DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 5 FDJ1032C Rev. B2(W) 1000 www.fairchildsemi.com FDJ1032C Complementary PowerTrench(R) MOSFET Typical Characteristics : Q1 2.2 12 3.5V 3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 4.5V I D, DRAIN CURRENT (A) 10 8 2.5V 6 4 2.0V 2 0 0 0.5 1 1.5 2 2.5 2 VGS = 2.5V 1.8 1.6 1.4 3.0V 3.5V 1.2 4.0V 0.8 3 0 2 4 VDS , DRAIN-SOURCE VOLTAGE (V) 8 10 12 Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0.28 I D = 3.2A VGS = 4.5V 1.5 I D = 1.6A 1.4 R DS(ON) , ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 6 I D, DRAIN CURRENT (A) Figure 11. On-Region Characteristics. 1.3 1.2 1.1 1 0.9 0.8 0.7 0.24 0.2 0.16 T A = 125C 0.12 0.08 T A = 25C 0.6 -50 -25 0 25 50 75 100 125 0.04 150 1 TJ, JUNCTION TEMPERATURE ( C) 2 3 4 5 V GS , GATE TO SOURCE VOLTAGE (V) Figure 13. On-Resistance Variation with Temperature. Figure 14. On-Resistance Variation with Gate-to-Source Voltage. 10 10 TA = -55 C I S, REVERSE DRAIN CURRENT (A) VGS = 0V V DS = 5V I D , DRAIN CURRENT (A) 4.5V 1 25C 8 125C 6 4 2 1 TA = 125C 0.1 25C 0.01 -55C 0.001 0.0001 0 1 1.5 2 2.5 3 0 3.5 Figure 15. Transfer Characteristics. 0.4 0.6 0.8 1 1.2 Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. 6 FDJ1032C Rev. B2(W) 0.2 V SD, BODY DIODE FORWARD VOLTAGE (V) VGS , GATE TO SOURCE VOLTAGE (V) www.fairchildsemi.com FDJ1032C Complementary PowerTrench(R) MOSFET Typical Characteristics : Q2 5 I 300 )V( EGATLOV ECRUOS-ETAG ,SGV D = 3.2A 250 4 V DS = 5V 10V C SS I ) Fp ( EC AT CA P AC 200 3 N 15V 150 I 2 100 1 0 f = 1MHz V GS = 0 V COSS 50 0 0.5 1 1.5 2 Qg, GATE CHARGE (nC) 0 2.5 CRSS 0 Figure 17. Gate Charge Characteristics. 5 10 15 Figure 18. Capacitance Characteristics. 100 10 N) LIMIT 100s 0.1 10s 4 2 0.01 0.1 6 N I VGS = 4.5V SINGLE PULSE RJA = 140 oC/W TA = 25 oC 1m s I NI DC 8 N 1s 1 10ms 100ms SINGLE PULSE RJA = 140C/W TA = 25C )W( REWOP T E S ART KAEP ,)kp(P ( N )A( T ERRUC ARD ,D R DS O 10 20 VDS, DRAIN TO SOURCE VOLTAGE (V) 1 10 0 0.001 100 V DS, DRAIN-SOURCE VOLTAGE (V) 0.01 0.1 1 t Figure 19. Maximum Safe Operating Area. , T ME ( 1 I sec 10 ) 100 1000 Figure 20. Single Pulse Maximum Power Dissipation. 1 N EC ATS SER LAMREHT T E S ART EV TCEFFE DEZ LAMRO ,) ( D=05 R JA(t) = r(t) * R JA R JA = 140 C . I N /W N 0.2 P(pk) I I 0.1 0.1 t1 0.05 t2 I TJ - TA = P * R N t r 0.01 0.0001 0.02 D 0.01 uty C ycle, JA (t) D = t1 t 2 / SINGLE PULSE 0.001 0.01 0.1 t 1 , T ME ( I sec ) 1 10 100 1000 Figure 21. Transient Thermal Response Curve. T ml T n n her ra a sie z on performed using the conditions described in Note 1b. characteri ati t ther m a l response will change depending on the circuit board design. 7 FDJ1032C Rev. B2(W) www.fairchildsemi.com FDJ1032C Complementary PowerTrench(R) MOSFET Typical Characteristics : Q2 PKG CL DRAIN 1 (0.24) (0.18) 3 0.30 0.20 PKG CL (0.73) (0.46) DRAIN 1 (0.50) 6 4 DRAIN 2 PKG CL Bottom View 0.30 MIN 1.70 1.50 A 4 6 DRAIN 1 TERMINAL 0.20 PKG CL B 4 6 0.84 2.35 MIN PKG CL 1.35 0.60 0.50 MIN 1.75 1.55 PKG CL 1 3 0.50 DRAIN 2 TERMINAL 1.00 1 3 Recommended Landing Pattern 0.275 0.125 0.075 M A B (0.20) 0.50 Notes: Unless otherwise specified all dimensions are in millimeters. 1.00 Top View PKG CL PKG CL 0.80 0.65 SEATING PLANE PKG 0.225 0.075 1.075 0.925 2.15 1.85 8 FDJ1032C Rev. 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