IRF7343Q - International Rectifier

N-Ch P-Ch

VDSS 55V -55V

RDS(on) 0.050Ω 0.105Ω

HEXFET® Power MOSFET

08/09/10

IRF7343QPBF

Description

N-CHANNEL MOSFET

P-CHANNEL MOSFET

Top View

Max.

N-Channel P-Channel Units

VDS Drain-Source Voltage 55 -55 V

ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 4.7 -3.4

ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 3.8 -2.7

IDM Pulsed Drain Current 38 -27

@TA = 25°C Maximum Power Dissipation 2.0 W

@TA = 70°C Maximum Power Dissipation 1.3 W

EAS Single Pulse Avalanche Energy72 114 mJ

IAR Avalanche Current 4.7 -3.4 A

EAR Repetitive Avalanche Energy 0.20 mJ

VGS Gate-to-Source Voltage ± 20 V

dv/dt Peak Diode Recovery dv/dt 5.0 -5.0 V/ns

TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C

Parameter

Absolute Maximum Ratings

Parameter Typ. Max. Units

RθJA Maximum Junction-to-Ambient  62.5 °C/W

Thermal Resistance

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lAdvanced Process Technology

lUltra Low On-Resistance

lDual N and P Channel MOSFET

lSurface Mount

lAvailable in Tape & Reel

l150°C Operating Temperature

lLead-Free

These HEXFET® Power MOSFET's in a Dual SO-8 package

utilize the lastest processing techniques to achieve extremely

low on-resistance per silicon area. Additional features of

these HEXFET Power MOSFET's are a 150°C junction

operating temperature, fast switching speed and improved

repetitive avalanche rating.These benefits combine to make

this design an extremely efficient and reliable device for use

in a wide variety of applications.

The efficient SO-8 package provides enhanced thermal

characteristics and dual MOSFET die capability making it

ideal in a variety of power applications. This dual, surface

mount SO-8 can dramatically reduce board space and is

also available in Tape & Reel.

SO-8

PD - 96110A

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 Surface mounted on FR-4 board, t ≤ 10sec.

Parameter Min. Typ. Max. Units Conditions

N-Ch 55   VGS = 0V, ID = 250µA

P-Ch -55   VGS = 0V, ID = -250µA

N-Ch  0.059  Reference to 25°C, ID = 1mA

P-Ch  0.054  Reference to 25°C, ID = -1mA

 0.043 0.050 VGS = 10V, ID = 4.7A 

 0.056 0.065 VGS = 4.5V, ID = 3.8A 

 0.095 0.105 VGS = -10V, ID = -3.4A 

 0.150 0.170 VGS = -4.5V, ID = -2.7A 

N-Ch 1.0   VDS = VGS, ID = 250µA

P-Ch -1.0   VDS = VGS, ID = -250µA

N-Ch 7.9   VDS = 10V, ID = 4.5A 

P-Ch 3.3   VDS = -10V, ID = -3.1A 

N-Ch   2.0 VDS = 55V, VGS = 0V

P-Ch   -2.0 VDS = -55V, VGS = 0V

N-Ch   25 VDS = 55V, VGS = 0V, TJ = 55°C

P-Ch   -25 VDS = -55V, VGS = 0V, TJ = 55°C

IGSS Gate-to-Source Forward Leakage N-P   ±100 VGS = ±20V

N-Ch  24 36

P-Ch  26 38

N-Ch  2.3 3.4

P-Ch  3.0 4.5

N-Ch  7.0 10

P-Ch  8.4 13

N-Ch  8.3 12

P-Ch  14 22

N-Ch  3.2 4.8

P-Ch  10 15

N-Ch  32 48

P-Ch  43 64

N-Ch  13 20

P-Ch  22 32

N-Ch  740 

P-Ch  690 

N-Ch  190  pF

P-Ch  210 

N-Ch  71 

P-Ch  86 

V(BR)DSS Drain-to-Source Breakdown Voltage

∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient

RDS(ON) Static Drain-to-Source On-Resistance

VGS(th) Gate Threshold Voltage

gfs Forward Transconductance

IDSS Drain-to-Source Leakage Current

QgTotal Gate Charge

Qgs Gate-to-Source Charge

Qgd Gate-to-Drain ("Miller") Charge

td(on) Turn-On Delay Time

trRise Time

td(off) Turn-Off Delay Time

tfFall Time

Ciss Input Capacitance

Coss Output Capacitance

Crss Reverse Transfer Capacitance

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

V/°C

Ω

µA

N-Channel

ID = 4.5A, VDS = 44V, VGS = 10V



P-Channel

ID = -3.1A, VDS = -44V, VGS = -10V

N-Channel

VDD = 28V, ID = 1.0A, RG = 6.0Ω,

RD = 28Ω



P-Channel

VDD = -28V, ID = -1.0A, RG = 6.0Ω,

RD = 28Ω

N-Channel

VGS = 0V, VDS = 25V,  = 1.0MHz

P-Channel

VGS = 0V, VDS = -25V,  = 1.0MHz

N-Ch

P-Ch

Parameter Min. Typ. Max. Units Conditions

N-Ch   2.0

P-Ch   -2.0

N-Ch   38

P-Ch   -27

N-Ch  0.70 1.2 TJ = 25°C, IS = 2.0A, VGS = 0V 

P-Ch  -0.80 -1.2 TJ = 25°C, IS = -2.0A, VGS = 0V 

N-Ch  60 90

P-Ch  54 80

N-Ch  120 170

P-Ch  85 130

Source-Drain Ratings and Characteristics

ISContinuous Source Current (Body Diode)

ISM Pulsed Source Current (Body Diode) 

VSD Diode Forward Voltage

trr Reverse Recovery Time

Qrr Reverse Recovery Charge

N-Channel

TJ = 25°C, IF =2.0A, di/dt = 100A/µs

P-Channel 

TJ = 25°C, IF = -2.0A, di/dt = 100A/µs

N-Channel ISD ≤ 4.7A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C

P-Channel ISD ≤ -3.4A, di/dt ≤ -150A/µs, VDD ≤ V

(BR)DSS, TJ ≤ 150°C

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 22 )

Notes:

Pulse width ≤ 300µs; duty cycle ≤ 2%.

 N-Channel Starting TJ = 25°C, L = 6.5mH RG = 25Ω, IAS = 4.7A.

P-Channel Starting TJ = 25°C, L = 20mH RG = 25Ω, IAS = -3.4A.

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100

3 4 5 6

V = 25V

20µs PULSE WIDTH

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

T = 25 C

J°

T = 150 C

J°

Fig 3. Typical Transfer Characteristics

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 4. Typical Source-Drain Diode

Forward Voltage

N-Channel

100

0.1 1 10 100

20µs PULSE WIDTH

T = 25 C

J°

TOP

BOTTOM

VGS

15V

12V

10V

8.0V

6.0V

4.0V

3.5V

3.0V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

3.0V

100

0.1 1 10 100

20µs PULSE WIDTH

T = 150 C

J°

TOP

BOTTOM

VGS

15V

12V

10V

8.0V

6.0V

4.0V

3.5V

3.0V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

3.0V

4.5V 4.5V

0.1

100

0.2 0.5 0.8 1.1 1.4

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

V = 0 V

T = 150 C

J°

T = 25 C

J°

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010 20 30 40

0.040

0.060

0.080

0.100

0.120

R , Drain-to-Source On Resistance

I , Drain Current (A)

DS (on)

VGS = 10V

VGS = 4.5V

Fig 5. Normalized On-Resistance

Vs. Temperature

Fig 8. Maximum Avalanche Energy

Vs. Drain Current

Fig 6. Typical On-Resistance Vs. Drain

Current

Fig 7. Typical On-Resistance Vs. Gate

Voltage

N-Channel

(Ω)

DS(on)

, Drain-to-Source On Resistance ( Ω )

-60 -40 -20 020 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

V =

I =

10V

4.7A

25 50 75 100 125 150

120

160

200

Starting T , Junction Temperature ( C)

E , Single Pulse Avalanche Energy (mJ)

TOP

BOTTOM

2.1A

3.8A

4.7A

0.04

0.06

0.08

0.10

0.12

0246810

V , Gate-to-Source Voltage (V)

I = 4.7A

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1 10 100

200

400

600

800

1000

1200

V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

0V,

f = 1MHz

+ C

C SHORTED

iss gs gd , ds

rss gd

oss ds gd

Ciss

Coss

Crss

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 10. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 9. Typical Capacitance Vs.

Drain-to-Source Voltage

N-Channel

010 20 30 40

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

I =

D4.5A

V = 12V

V = 30V

V = 48V

0.1

100

0.0001 0.001 0.01 0.1 1 10 100

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

JDM thJA A

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

thJA

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

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0.1

100

0.1 1 10 100

20µs PULSE WIDTH

T = 25 C

J°

TOP

BOTTOM

VGS

-15V

-12V

-10V

-8.0V

-6.0V

-4.0V

-3.5V

-3.0V

-V , Drain-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

-3.0V

Fig 14. Typical Transfer Characteristics

Fig 13. Typical Output Characteristics

Fig 12. Typical Output Characteristics

Fig 15. Typical Source-Drain Diode

Forward Voltage

P-Channel

0.1

100

0.1 1 10 100

20µs PULSE WIDTH

T = 150 C

J°

TOP

BOTTOM

VGS

-15V

-12V

-10V

-8.0V

-6.0V

-4.0V

-3.5V

-3.0V

-V , Drain-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

-3.0V

100

34567

V = -25V

20µs PULSE WIDTH

-V , Gate-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

T = 25 C

J°

T = 150 C

J°

0.1

100

0.2 0.4 0.6 0.8 1.0 1.2 1.4

-V ,Source-to-Drain Voltage (V)

-I , Reverse Drain Current (A)

V = 0 V

T = 25 C

J°

T = 150 C

J°

-4.5V -4.5V

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Fig 16. Normalized On-Resistance

Vs. Temperature

Fig 19. Maximum Avalanche Energy

Vs. Drain Current

Fig 17. Typical On-Resistance Vs. Drain

Current

Fig 18. Typical On-Resistance Vs. Gate

Voltage

P-Channel

0246810 12

0.080

0.120

0.160

0.200

0.240

R , Drain-to-Source On Resistance

-I , Drain Current (A)

DS (on)

VGS = -4.5V

VGS = -10V

(Ω)

-60 -40 -20 020 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

V =

I =

-10V

-3.4 A

25 50 75 100 125 150

100

150

200

250

300

Starting T , Junction Temperature ( C)

E , Single Pulse Avalanche Energy (mJ)

TOP

BOTTOM

-1.5A

-2.7A

-3.4A

DS(on)

, Drain-to-Source On Resistance ( Ω )

0.05

0.15

0.25

0.35

0.45

2581114

-V , Gate-to-Source Voltage (V)

I = -3.4 A

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010 20 30 40

Q , Total Gate Charge (nC)

-V , Gate-to-Source Voltage (V)

I =

D-3.1A

V =-12V

V =-30V

V =-48V

Fig 21. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 20. Typical Capacitance Vs.

Drain-to-Source Voltage

P-Channel

Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

0.1

100

0.0001 0.001 0.01 0.1 1 10 100

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

JDM thJA A

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

thJA

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

1 10 100

240

480

720

960

1200

-V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

0V,

f = 1MHz

+ C

C SHORTED

iss gs gd , ds

rss gd

oss ds gd

Ciss

Coss

Crss

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SO-8 Package Outline

Dimensions are shown in millimeters (inches)

SO-8 Part Marking

.189

.1497

0°

.013

.050 BASIC

.0532

.0040

.2284

.0099

.016

.1968

.1574

8°

.020

.0688

.0098

.2440

.0196

.050

4.80

3.80

0.33

1.35

0.10

5.80

0.25

0.40

0°

1.27 BASIC

5.00

4.00

0.51

1.75

0.25

6.20

0.50

1.27

MI N MAX

MILLIMETERSINCHES

MIN MAX

DIM

8°

c .0075 .0098 0.19 0.25

.025 BASIC 0.635 BAS IC

D B

0.25 [.010] A

K x 45°

8X L 8X c

0.25 [.010] CAB

8X b

0.10 [.004]

4312

FOOTPRINT

8X 0.72 [.028]

6.46 [.255]

3X 1.27 [.050]

4. OU T L I NE CONF OR MS T O JE DE C OU T L I NE MS - 012 AA.

NOT ES :

1. DIMENS IONING & TOLERANCING PER AS ME Y14.5M-1994.

2. CONT ROL LING DIME NS ION: MILLIMET ER

3. DIMENS IONS ARE S HOWN IN MIL L IME T E RS [INCHES ].

5 DIME NS ION DOE S NOT INCL UDE MOL D PROT RUS IONS .

6 DIME NS ION DOE S NOT INCL UDE MOL D PROT RUS IONS .

MOLD PROT RUS IONS NOT TO EXCEED 0.25 [.010].

7 DIMENS ION IS THE LENGT H OF LEAD FOR SOLDERING TO

A S UBSTRAT E.

MOLD PROT RUS IONS NOT TO EXCEED 0.15 [.006].

8X 1.78 [.070]

DAT E CODE (YWW)

XXXX

INT ERNATIONAL

RECTIFIER

LOGO

F7101

Y = LAS T DIGIT OF T HE YEAR

PART NUMBER

LOT CODE

WW = WE E K

EXAMPLE: THIS IS AN IRF7101 (MOS FET )

P = DESIGNATES LEAD-FREE

PRODUCT (OPTIONAL)

A = AS S E MB L Y S I T E CODE

Notes:

1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/

2. For the most current drawing please refer to IR website at http://www.irf.com/package/

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330.00

(12.992)

MAX.

14.40 ( .566 )

12.40 ( .488 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

FEED DIRECTION

TERMINAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

SO-8 Tape and Reel

Dimensions are shown in millimeters (inches)

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

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Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

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