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April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
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2003, 2009
FEATURES
• The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high-
gain amplification
P
O (1 dB) = 21 dBm TYP. @ VCE = 3.6 V, IC (set) = 10 mA (RF OFF), f = 2 GHz
NF = 0.6 dB TYP., Ga = 19.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 1 GHz
• Maximum stable power gain: MSG = 17.0 dB TYP. @ VCE = 3 V, IC = 50 mA, f = 2 GHz
• High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V
• 6-pin lead-less minimold (M16, 1208 PKG)
ORDERING INFORMATION
Part Number Order Number Package Quantity Supplying Form
NESG2101M16 NESG2101M16-A 50 pcs
(Non reel)
NESG2101M16-T3 NESG2101M16-T3-A
6-pin lead-less minimold
(M16, 1208 PKG)
(Pb-Free) 10 kpcs/reel
• 8 mm wide embossed taping
• Pin 1 (Collector), Pin 6 (Emitter) face the
perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO 13.0 V
Collector to Emitter Voltage VCEO 5.0 V
Emitter to Base Voltage VEBO 1.5 V
Collector Current IC 100 mA
Total Power Dissipation Ptot Note 190 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg −65 to +150 °C
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
<R>
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
NPN SILICON GERMANIUM RF TRANSISTOR
NESG2101M16
NPN SiGe RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (125 mW)
6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
Document No. PU10395EJ03V0DS (3rd edition)
Date Published September 2009 NS
Printed in Japan
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
DC Characteristics
Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA − − 100 nA
Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA − − 100 nA
DC Current Gain hFE Note 1 VCE = 2 V, IC = 15 mA 130 190 260 −
RF Characteristics
Gain Bandwidth Product fT VCE = 3 V, IC = 50 mA, f = 2 GHz 14 17 − GHz
Insertion Power Gain ⏐S21e⏐2 VCE = 3 V, IC = 50 mA, f = 2 GHz 11.5 13.5 − dB
Noise Figure (1) NF VCE = 2 V, IC = 10 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt − 0.9 1.2 dB
Noise Figure (2) NF VCE = 2 V, IC = 7 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt − 0.6 − dB
Associated Gain (1) Ga VCE = 2 V, IC = 10 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt 11.0 13.0 − dB
Associated Gain (2) Ga VCE = 2 V, IC = 7 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt − 19.0 − dB
Reverse Transfer Capacitance Cre Note 2 VCB = 2 V, IE = 0 mA, f = 1 MHz − 0.4 0.5 pF
Maximum Stable Power Gain MSG Note 3 VCE = 3 V, IC = 50 mA, f = 2 GHz 14.5 17.0 − dB
Gain 1 dB Compression Output Power PO (1 dB) VCE = 3.6 V, IC (set) = 10 mA (RF OFF),
f = 2 GHz, ZS = ZSopt, ZL = ZLopt
− 21 − dBm
Linear Gain GL VCE = 3.6 V, IC = 10 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt
− 15 − dBm
Notes 1. Pulse measurement: PW ≤ 350
μ
s, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
3. MSG =
hFE CLASSIFICATION
Rank FB/YFB
Marking zH
hFE Value 130 to 260
S21
S12
<R>
Data Sheet PU10395EJ03V0DS
2
NESG2101M16
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
300
250
200
190
150
50
025 50 75 100 125 150
100
Total Power Dissipation P
tot
(mW)
Ambient Temperature T
A
(°C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Mounted on Glass Epoxy PCB
(1.08 cm
2
× 1.0 mm (t) )
f = 1 MHz
1.0
0.6
0.8
0.2
0.4
0246810
Reverse Transfer Capacitance C
re
(pF)
Collector to Base Voltage V
CB
(V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
V
CE
= 1 V
100
10
1
0.01
0.001
0.1
0.0001 0.70.5 0.60.4 0.8 0.9 1.0
Collector Current I
C
(mA)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 2 V
100
10
1
0.01
0.001
0.1
0.0001 0.70.5 0.60.4 0.8 0.9 1.0
Collector Current I
C
(mA)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 3 V
100
10
1
0.01
0.001
0.1
0.0001 0.70.5 0.60.4 0.8 0.9 1.0
Collector Current I
C
(mA)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 4 V
100
10
1
0.01
0.001
0.1
0.0001 0.70.5 0.60.4 0.8 0.9 1.0
Collector Current I
C
(mA)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Remark The graphs indicate nominal characteristics.
<R>
Data Sheet PU10395EJ03V0DS 3
NESG2101M16
100
40
50
60
70
80
90
10
20
30
01234
56
IB = 50 A
μ
300 A
μ
500 A
μ
350 A
μ
400 A
μ
450 A
μ
200 A
μ
150 A
μ
100 A
μ
250 A
μ
Collector Current IC (mA)
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
1 000
100
10 10.1 10 100
VCE = 1 V
DC Current Gain hFE
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
100
10 10.1 10 100
VCE = 2 V
DC Current Gain hFE
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
100
10 10.1 10 100
VCE = 3 V
DC Current Gain hFE
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
100
10 10.1 10 100
VCE = 4 V
DC Current Gain hFE
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
Remark The graphs indicate nominal characteristics.
Data Sheet PU10395EJ03V0DS
4
NESG2101M16
Gain Bandwidth Product f
T
(GHz)
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
V
CE
= 1 V,
f = 2 GHz
30
5
10
15
20
25
0101 100
Gain Bandwidth Product f
T
(GHz)
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
V
CE
= 2 V,
f = 2 GHz
30
5
10
15
20
25
0101 100
Gain Bandwidth Product f
T
(GHz)
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
V
CE
= 3 V,
f = 2 GHz
30
5
10
15
20
25
0101 100
Gain Bandwidth Product f
T
(GHz)
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
V
CE
= 4 V,
f = 2 GHz
30
5
10
15
20
25
0101 100
Remark The graphs indicate nominal characteristics.
Data Sheet PU10395EJ03V0DS 5
NESG2101M16
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
V
CE
= 1 V,
I
C
= 50 mA
30
25
20
15
10
5
01 10 100
35
MAG
MSG
|S
21e
|
2
0.1
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
V
CE
= 2 V,
I
C
= 50 mA
30
25
20
15
10
5
0
1 10 100
35
MAG
MSG
|S
21e
|
2
40
0.1
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
V
CE
= 3 V,
I
C
= 50 mA
30
25
20
15
10
5
01 10 100
35
MAG
MSG
|S
21e
|
2
40
0.1
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
V
CE
= 4 V,
I
C
= 40 mA
30
25
20
15
10
5
01 10 100
35
MAG
MSG
|S
21e
|
2
40
0.1
Remark The graphs indicate nominal characteristics.
Data Sheet PU10395EJ03V0DS
6
NESG2101M16
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
V
CE
= 1 V,
f = 1 GHz
MAGMSG
|S
21e
|
2
30
25
20
15
10
5
01 10 100
Collector Current I
C
(mA)
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Stable Power Gain MSG (dB)
V
CE
= 2 V,
f = 1 GHz
MSG
|S
21e
|
2
30
25
20
15
10
5
01 10 100
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
V
CE
= 1 V,
f = 2 GHz
MAGMSG
|S
21e
|
2
30
25
20
15
10
5
01 10 100
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
V
CE
= 2 V,
f = 2 GHz
MAG
MSG
|S
21e
|
2
30
25
20
15
10
5
0110 100
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
V
CE
= 1 V,
f = 3 GHz
MAG
MSG
|S
21e
|
2
20
15
10
5
0110 100
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
V
CE
= 2 V,
f = 3 GHz
MAG
MSG
|S
21e
|
2
20
15
10
5
0110 100
Remark The graphs indicate nominal characteristics.
Data Sheet PU10395EJ03V0DS 7
NESG2101M16
Collector Current I
C
(mA)
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Stable Power Gain MSG (dB)
V
CE
= 3 V,
f = 1 GHz
MSG
|S
21e
|
2
30
25
20
15
10
5
01 10 100
Collector Current I
C
(mA)
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Stable Power Gain MSG (dB)
V
CE
= 4 V,
f = 1 GHz
MSG
|S
21e
|
2
30
25
20
15
10
5
01 10 100
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
V
CE
= 3 V,
f = 2 GHz
MAGMSG
|S
21e
|
2
30
25
20
15
10
5
01 10 100
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
V
CE
= 4 V,
f = 2 GHz
MAGMSG
|S
21e
|
2
30
25
20
15
10
5
01 10 100
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
V
CE
= 3 V,
f = 3 GHz
MAGMSG
|S
21e
|
2
20
15
10
5
01 10 100
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
V
CE
= 4 V,
f = 3 GHz
MAGMSG
|S
21e
|
2
20
15
10
5
01 10 100
Remark The graphs indicate nominal characteristics.
Data Sheet PU10395EJ03V0DS
8
NESG2101M16
Input Power P
in
(dBm)
OUTPUT POWER, POWER GAIN, I
C
,
COLLECTOR EFFICIENCY vs. INPUT POWER
Power Gain G
P
(dB)
Output Power P
out
(dBm)
Collector Current I
C
(mA)
Collector Efficiency
C
(%)
η
25
20
15
5
0
10
–5
120
20
60
40
80
100
0
–20 –5–10 05
–15 10
V
CE
= 3.6 V, f = 1 GHz
I
cq
= 10 mA
G
P
P
out
C
η
I
C
Input Power P
in
(dBm)
COLLECTOR EFFICIENCY vs. INPUT POWER
Power Gain G
P
(dB)
Output Power P
out
(dBm)
Collector Current I
C
(mA)
Collector Efficiency
C
(%)
η
25
20
15
5
0
10
–5
120
20
60
40
80
100
0
–15 0–5 510
–10 15
V
CE
= 3.6 V, f = 2 GHz
I
cq
= 10 mA
G
P
P
out
η
C
I
C
Input Power P
in
(dBm)
COLLECTOR EFFICIENCY vs. INPUT POWER
Power Gain G
P
(dB)
Output Power P
out
(dBm)
Collector Current I
C
(mA)
Collector Efficiency
C
(%)
η
25
20
15
5
0
10
–5
120
20
60
40
80
100
0
–15 0–5 510
–10 15
V
CE
= 3.6 V, f = 3 GHz
I
cq
= 10 mA
G
P
P
out
C
η
I
C
Input Power P
in
(dBm)
COLLECTOR EFFICIENCY vs. INPUT POWER
Power Gain G
P
(dB)
Output Power P
out
(dBm)
Collector Current I
C
(mA)
Collector Efficiency
C
(%)
η
25
20
15
5
0
10
–5
120
20
60
40
80
100
0
–10 50 10 15
–5 20
V
CE
= 3.6 V, f = 5.2 GHz
I
cq
= 10 mA
G
P
P
out
C
η
I
C
OUTPUT POWER, POWER GAIN, I
C
,
OUTPUT POWER, POWER GAIN, I
C
,OUTPUT POWER, POWER GAIN, I
C
,
Remark The graphs indicate nominal characteristics.
Data Sheet PU10395EJ03V0DS 9
NESG2101M16
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
5
2
1
3
0
25
5
15
20
0
1 10 100
V
CE
= 1 V,
f = 1 GHz
G
a
NF
10
4
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
5
2
1
3
0
25
5
15
20
0
1 10 100
V
CE
= 2 V,
f = 1 GHz
G
a
NF
10
4
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
5
2
1
3
0
25
5
15
20
0
1 10 100
V
CE
= 1 V,
f = 2 GHz
G
a
NF
10
4
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
5
2
1
3
0
25
5
15
20
0
1 10 100
V
CE
= 2 V,
f = 2 GHz
G
a
NF
10
4
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
5
2
1
3
0
25
5
15
20
0
1 10 100
V
CE
= 1 V,
f = 3 GHz
G
a
NF
10
4
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
5
2
1
3
0
25
5
15
20
0
1 10 100
V
CE
= 2 V,
f = 3 GHz
G
a
NF
10
4
Remark The graphs indicate nominal characteristics.
Data Sheet PU10395EJ03V0DS
10
NESG2101M16
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
5
2
1
3
0
25
5
15
20
0
1 10 100
V
CE
= 3 V,
f = 1 GHz
G
a
NF
10
4
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
5
2
1
3
0
25
5
15
20
0
1 10 100
V
CE
= 3 V,
f = 2 GHz
G
a
NF
10
4
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
5
2
1
3
0
25
5
15
20
0
1 10 100
V
CE
= 3 V,
f = 3 GHz
G
a
NF
10
4
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import
of the parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.necel.com/microwave/en/
<R>
Data Sheet PU10395EJ03V0DS 11
NESG2101M16
PACKAGE DIMENSIONS
6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) (UNIT: mm)
0.5±0.05
0.125+0.1
–0.05
0.40.4
0.8
0.15±0.05
1.2+0.07
–0.05
0.8+0.07
–0.05
1.0±0.05
123
654
zH
PIN CONNECTIONS
1. Collector
2. Emitter
3. Emitter
4. Base
5. Emitter
6. Emitter
Caution All four Emitter-pins should be connected to PWB in order to obtain better Electrical performance
and heat sinking.
Data Sheet PU10395EJ03V0DS
12
NESG2101M16
The information in this document is current as of September, 2009. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets, etc., for the most up-to-date specifications of NEC Electronics products. Not all products
and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without the prior
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Descriptions of circuits, software and other related information in this document are provided for illustrative
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While NEC Electronics endeavors to enhance the quality and safety of NEC Electronics products, customers
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NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
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The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-
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The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
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determine NEC Electronics' willingness to support a given application.
(Note)
•
•
•
•
•
•
M8E0904E
(1)
(2)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
"Standard":
"Special":
"Specific":
NESG2101M16
