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DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES * The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification PO (1 dB) = 21 dBm TYP. @ VCE = 3.6 V, IC (set) = 10 mA (RF OFF), f = 2 GHz NF = 0.6 dB TYP., Ga = 19.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 1 GHz * Maximum stable power gain: MSG = 17.0 dB TYP. @ VCE = 3 V, IC = 50 mA, f = 2 GHz * High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V * 6-pin lead-less minimold (M16, 1208 PKG) <R> ORDERING INFORMATION Part Number Order Number NESG2101M16 NESG2101M16-A NESG2101M16-T3 Package Quantity 6-pin lead-less minimold 50 pcs * 8 mm wide embossed taping (M16, 1208 PKG) (Non reel) * Pin 1 (Collector), Pin 6 (Emitter) face the (Pb-Free) NESG2101M16-T3-A Supplying Form perforation side of the tape 10 kpcs/reel Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 13.0 V Collector to Emitter Voltage VCEO 5.0 V Emitter to Base Voltage VEBO 1.5 V IC 100 mA 190 mW Collector Current Total Power Dissipation Ptot Note Junction Temperature Tj 150 C Storage Temperature Tstg -65 to +150 C 2 Note Mounted on 1.08 cm x 1.0 mm (t) glass epoxy PCB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. PU10395EJ03V0DS (3rd edition) Date Published September 2009 NS Printed in Japan The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. 2003, 2009 NESG2101M16 ELECTRICAL CHARACTERISTICS (TA = +25C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA - - 100 nA Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA - - 100 nA VCE = 2 V, IC = 15 mA 130 190 260 - VCE = 3 V, IC = 50 mA, f = 2 GHz 14 17 - GHz S21e VCE = 3 V, IC = 50 mA, f = 2 GHz 11.5 13.5 - dB Noise Figure (1) NF VCE = 2 V, IC = 10 mA, f = 2 GHz, ZS = ZSopt, ZL = ZLopt - 0.9 1.2 dB Noise Figure (2) NF VCE = 2 V, IC = 7 mA, f = 1 GHz, ZS = ZSopt, ZL = ZLopt - 0.6 - dB Associated Gain (1) Ga VCE = 2 V, IC = 10 mA, f = 2 GHz, ZS = ZSopt, ZL = ZLopt 11.0 13.0 - dB Associated Gain (2) Ga VCE = 2 V, IC = 7 mA, f = 1 GHz, ZS = ZSopt, ZL = ZLopt - 19.0 - dB VCB = 2 V, IE = 0 mA, f = 1 MHz - 0.4 0.5 pF VCE = 3 V, IC = 50 mA, f = 2 GHz 14.5 17.0 - dB - 21 - dBm - 15 - dBm DC Current Gain hFE Note 1 RF Characteristics Gain Bandwidth Product fT 2 Insertion Power Gain Note 2 Reverse Transfer Capacitance Cre Maximum Stable Power Gain MSG Gain 1 dB Compression Output Power Note 3 PO (1 dB) VCE = 3.6 V, IC (set) = 10 mA (RF OFF), f = 2 GHz, ZS = ZSopt, ZL = ZLopt Linear Gain GL VCE = 3.6 V, IC = 10 mA, f = 2 GHz, ZS = ZSopt, ZL = ZLopt Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2% 2. Collector to base capacitance when the emitter grounded 3. MSG = S21 S12 hFE CLASSIFICATION <R> 2 Rank FB/YFB Marking zH hFE Value 130 to 260 Data Sheet PU10395EJ03V0DS NESG2101M16 TYPICAL CHARACTERISTICS (TA = +25C, unless otherwise specified) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Total Power Dissipation Ptot (mW) 250 200 190 150 100 50 0 100 25 50 75 100 125 150 0.6 0.4 0.2 2 4 6 8 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 VCE = 1 V Collector Current IC (mA) 0.1 0.01 0.001 0.5 0.6 0.7 0.8 0.9 1.0 10 1 0.1 0.01 0.001 0.0001 0.4 0.5 0.6 0.7 0.8 0.9 Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 VCE = 3 V 1 0.1 0.01 0.001 0.5 0.6 0.7 0.8 0.9 1.0 10 VCE = 2 V Base to Emitter Voltage VBE (V) 10 0.0001 0.4 0.8 Collector to Base Voltage VCB (V) 1 100 f = 1 MHz Ambient Temperature TA (C) 10 0.0001 0.4 1.0 0 Collector Current IC (mA) Collector Current IC (mA) Mounted on Glass Epoxy PCB (1.08 cm2 x 1.0 mm (t) ) Reverse Transfer Capacitance Cre (pF) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 300 Collector Current IC (mA) <R> 1.0 VCE = 4 V 10 1 0.1 0.01 0.001 0.0001 0.4 Base to Emitter Voltage VBE (V) 0.5 0.6 0.7 0.8 0.9 1.0 Base to Emitter Voltage VBE (V) Remark The graphs indicate nominal characteristics. Data Sheet PU10395EJ03V0DS 3 NESG2101M16 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 100 Collector Current IC (mA) 90 80 30 500 A 450 A 400 A 350 A 300 A 250 A 200 A 150 A 20 100 A 70 60 50 40 10 0 IB = 50 A 1 2 3 4 6 5 Collector to Emitter Voltage VCE (V) DC CURRENT GAIN vs. COLLECTOR CURRENT DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 1 000 100 10 0.1 VCE = 2 V DC Current Gain hFE DC Current Gain hFE VCE = 1 V 1 10 100 10 0.1 100 1 10 Collector Current IC (mA) Collector Current IC (mA) DC CURRENT GAIN vs. COLLECTOR CURRENT DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 1 000 VCE = 4 V DC Current Gain hFE DC Current Gain hFE VCE = 3 V 100 10 0.1 1 10 100 100 10 0.1 Collector Current IC (mA) 1 10 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. 4 100 Data Sheet PU10395EJ03V0DS 100 NESG2101M16 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 30 25 VCE = 1 V, f = 2 GHz Gain Bandwidth Product fT (GHz) Gain Bandwidth Product fT (GHz) 30 20 15 10 5 0 1 10 10 5 10 Collector Current IC (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 100 30 VCE = 3 V, f = 2 GHz Gain Bandwidth Product fT (GHz) Gain Bandwidth Product fT (GHz) 15 Collector Current IC (mA) 20 15 10 5 0 1 20 0 1 100 30 25 25 VCE = 2 V, f = 2 GHz 10 100 25 VCE = 4 V, f = 2 GHz 20 15 10 5 0 1 Collector Current IC (mA) 10 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. Data Sheet PU10395EJ03V0DS 5 NESG2101M16 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 30 VCE = 1 V, IC = 50 mA MSG MAG 25 20 15 |S21e|2 10 5 0 0.1 1 10 30 MAG 25 20 15 |S21e|2 10 5 0 0.1 1 10 100 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY VCE = 3 V, IC = 50 mA MSG MAG |S21e|2 15 10 5 1 10 100 40 VCE = 4 V, IC = 40 mA 35 30 MSG MAG 25 20 15 |S21e|2 10 Frequency f (GHz) 5 0 0.1 1 10 Frequency f (GHz) Remark The graphs indicate nominal characteristics. 6 MSG INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 25 0 0.1 VCE = 2 V, IC = 50 mA 35 Frequency f (GHz) 35 20 40 Frequency f (GHz) 40 30 100 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 35 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Data Sheet PU10395EJ03V0DS 100 NESG2101M16 INSERTION POWER GAIN, MSG vs. COLLECTOR CURRENT 30 25 MSG MAG 20 15 10 |S21e|2 5 0 1 10 100 Insertion Power Gain |S21e|2 (dB) Maximum Stable Power Gain MSG (dB) 30 VCE = 1 V, f = 1 GHz VCE = 2 V, f = 1 GHz 25 MSG 20 15 |S21e|2 10 5 0 1 10 100 Collector Current IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 VCE = 1 V, f = 2 GHz 25 20 MSG MAG 15 10 5 |S21e|2 0 1 10 100 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Collector Current IC (mA) 30 VCE = 2 V, f = 2 GHz 25 MSG 20 MAG 15 10 5 0 |S21e|2 10 1 100 Collector Current IC (mA) Collector Current IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 VCE = 1 V, f = 3 GHz 15 MSG MAG 10 5 |S21e|2 0 1 10 100 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 VCE = 2 V, f = 3 GHz 15 MSG MAG 10 Collector Current IC (mA) 5 |S21e|2 0 1 10 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. Data Sheet PU10395EJ03V0DS 7 NESG2101M16 INSERTION POWER GAIN, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Stable Power Gain MSG (dB) 30 VCE = 3 V, f = 1 GHz 25 MSG 20 15 |S21e|2 10 5 0 1 10 30 MSG 20 15 |S21e|2 10 5 0 1 10 100 Collector Current IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 VCE = 3 V, f = 2 GHz 25 MSG 20 MAG 15 10 5 |S21e|2 0 1 10 100 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Collector Current IC (mA) 30 VCE = 4 V, f = 2 GHz 25 MSG 20 MAG 15 10 5 |S21e|2 0 1 10 100 Collector Current IC (mA) Collector Current IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 VCE = 3 V, f = 3 GHz 15 MSG MAG 10 5 |S21e|2 0 1 10 100 20 VCE = 4 V, f = 3 GHz 15 MSG MAG 10 Collector Current IC (mA) 5 |S21e|2 0 1 10 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. 8 VCE = 4 V, f = 1 GHz 25 100 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MSG vs. COLLECTOR CURRENT Data Sheet PU10395EJ03V0DS 100 NESG2101M16 120 100 20 100 GP 15 80 10 60 Pout IC C 5 0 -5 -20 -15 -10 40 20 VCE = 3.6 V, f = 1 GHz Icq = 10 mA 0 10 0 5 -5 15 80 GP 60 10 Pout IC 5 40 C 0 -5 -15 -10 20 VCE = 3.6 V, f = 2 GHz Icq = 10 mA 0 15 5 10 0 -5 Input Power Pin (dBm) Input Power Pin (dBm) OUTPUT POWER, POWER GAIN, IC, COLLECTOR EFFICIENCY vs. INPUT POWER OUTPUT POWER, POWER GAIN, IC, COLLECTOR EFFICIENCY vs. INPUT POWER 120 100 Pout 15 GP 10 80 60 IC 5 40 C 20 0 -5 -15 -10 -5 0 5 10 120 25 0 15 Output Power Pout (dBm) Power Gain GP (dB) 20 VCE = 3.6 V, f = 3 GHz Icq = 10 mA Collector Current IC (mA) Collector Efficiency C (%) Output Power Pout (dBm) Power Gain GP (dB) 25 20 Collector Current IC (mA) Collector Efficiency C (%) 25 Output Power Pout (dBm) Power Gain GP (dB) 20 120 Collector Current IC (mA) Collector Efficiency C (%) Output Power Pout (dBm) Power Gain GP (dB) 25 OUTPUT POWER, POWER GAIN, IC, COLLECTOR EFFICIENCY vs. INPUT POWER VCE = 3.6 V, f = 5.2 GHz Icq = 10 mA 100 15 80 Pout 10 5 60 IC GP 40 20 0 -5 -10 Input Power Pin (dBm) Collector Current IC (mA) Collector Efficiency C (%) OUTPUT POWER, POWER GAIN, IC, COLLECTOR EFFICIENCY vs. INPUT POWER C -5 0 5 10 15 0 20 Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. Data Sheet PU10395EJ03V0DS 9 NESG2101M16 25 4 20 4 20 2 10 NF 1 VCE = 1 V, f = 1 GHz 0 1 10 2 10 NF 0 5 VCE = 2 V, f = 1 GHz 1 Collector Current IC (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 25 5 25 4 20 4 20 15 2 10 NF 1 0 5 VCE = 1 V, f = 2 GHz 1 10 Noise Figure NF (dB) 5 Ga 3 15 Ga 2 10 NF 1 0 100 0 5 VCE = 2 V, f = 2 GHz 1 10 0 100 Collector Current IC (mA) Collector Current IC (mA) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 25 5 25 4 20 4 20 3 15 Ga 2 10 0 5 NF VCE = 1 V, f = 3 GHz 1 10 0 100 Noise Figure NF (dB) 5 1 3 15 Ga 2 10 1 0 NF 5 VCE = 2 V, f = 3 GHz 1 Collector Current IC (mA) 10 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. 10 0 100 10 Collector Current IC (mA) 3 Noise Figure NF (dB) 15 1 0 100 Associated Gain Ga (dB) Noise Figure NF (dB) 5 Ga 3 Data Sheet PU10395EJ03V0DS Associated Gain Ga (dB) 15 0 100 Associated Gain Ga (dB) Ga 3 Noise Figure NF (dB) 5 Associated Gain Ga (dB) 25 Associated Gain Ga (dB) Noise Figure NF (dB) 5 Associated Gain Ga (dB) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT NESG2101M16 5 25 4 20 4 20 Ga 3 15 2 10 NF 1 0 5 VCE = 3 V, f = 1 GHz 1 10 Noise Figure NF (dB) 25 Associated Gain Ga (dB) Noise Figure NF (dB) 5 3 2 10 NF 1 0 0 100 15 Ga 5 VCE = 3 V, f = 2 GHz 1 10 Associated Gain Ga (dB) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 0 100 Collector Current IC (mA) Collector Current IC (mA) 5 25 4 20 3 15 Ga 2 10 1 0 5 NF VCE = 3 V, f = 3 GHz 1 10 Associated Gain Ga (dB) Noise Figure NF (dB) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 0 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. <R> S-PARAMETERS S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [RF and Microwave] [Device Parameters] URL http://www.necel.com/microwave/en/ Data Sheet PU10395EJ03V0DS 11 NESG2101M16 PACKAGE DIMENSIONS 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) (UNIT: mm) 1.00.05 3 0.150.05 6 5 0.125+0.1 -0.05 0.50.05 4 2 0.4 0.4 0.8 zH 1.2+0.07 -0.05 1 0.8+0.07 -0.05 PIN CONNECTIONS 1. 2. 3. 4. 5. 6. Collector Emitter Emitter Base Emitter Emitter Caution All four Emitter-pins should be connected to PWB in order to obtain better Electrical performance and heat sinking. 12 Data Sheet PU10395EJ03V0DS NESG2101M16 * The information in this document is current as of September, 2009. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. In addition, NEC Electronics products are not taken measures to prevent radioactive rays in the product design. When customers use NEC Electronics products with their products, customers shall, on their own responsibility, incorporate sufficient safety measures such as redundancy, fire-containment and anti-failure features to their products in order to avoid risks of the damages to property (including public or social property) or injury (including death) to persons, as the result of defects of NEC Electronics products. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. 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"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E0904E