APTC80A15SCT
APTC80A15SCT – Rev 01 May, 2004
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NT C2
OUT
VBUS
NT C1
0/VBUS
Q1
G1
Q2
S1
S2
G2
NTC2S1
OUT
OUT
NTC1
VBUS
0/VBUS
G2
S2
G1
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol Parameter Max ratings Unit
VDSS Drain - Source Breakdown Voltage 800 V
Tc = 25°C 28
ID Continuous Drain Current Tc = 80°C 21
IDM Pulsed Drain current 112
A
VGS Gate - Source Voltage ±30 V
RDSon Drain - Source ON Resistance 150 mW
PD Maximum Power Dissipation Tc = 25°C 277 W
IAR Avalanche current (repetitive and non repetitive) 24 A
EAR Repetitive Avalanche Energy 0.5
EAS Single Pulse Avalanche Energy 670 mJ
VDSS = 800V
RDSon = 150mW max @ Tj = 25°C
ID = 28A @ Tc = 25°C
Application
· Motor control
· Switched Mode Power Supplies
· Uninterruptible Power Supplies
Features
·
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
· Parallel SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
· Kelvin source for easy drive
· Very low stray inductance
- Symmetrical design
- Lead frames for power connections
· Internal thermistor for temperature monitoring
· High level of integration
Benefits
· Outstanding performance at high frequency operation
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Solderable terminals both for power and signal fo
r
easy PCB mounting
· Low profile
Phase leg
Serie & SiC parallel diodes
Super Junction
MOSFET Power Module
APTC80A15SCT
APTC80A15SCT – Rev 01 May, 2004
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
BVDSS Drain - Source Breakdown Voltage VGS = 0V, ID = 500µA 800 V
VGS = 0V,VDS = 800V Tj = 25°C 50
IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 800V T
j = 125°C 500 µA
RDS(on) Drain – Source on Resistance VGS = 10V, ID = 14A 150
mW
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 2mA 2.1 3 3.9 V
IGSS Gate – Source Leakage Current VGS = ±20 V, VDS = 0V ±150 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Ciss Input Capacitance 4507
Coss Output Capacitance 2092
Crss Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz 108
pF
Qg Total gate Charge 182
Qgs Gate – Source Charge 24
Qgd Gate – Drain Charge
VGS = 10V
VBus = 400V
ID = 28A 92
nC
Td(on) Turn-on Delay Time 10
Tr Rise Time 13
Td(off) Turn-off Delay Time 83
Tf Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 533V
ID = 28A
RG = 2.5W 35
ns
Eon Turn-on Switching Energy 292
Eoff Turn-off Switching Energy u
Inductive switching @ 25°C
VGS = 15V, VBus = 533V
ID = 28A, RG = 2.5Ω 278
µJ
Eon Turn-on Switching Energy 510
Eoff Turn-off Switching Energy u
Inductive switching @ 125°C
VGS = 15V, VBus = 533V
ID = 28A, RG = 2.5Ω 342 µJ
u In accordance with JEDEC standard JESD24-1.
Series diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
IF(AV) Maximum Average Forward Current 50% duty cycle Tc = 85°C 30 A
IF = 30A 1.1 1.15
IF = 60A 1.4
VF Diode Forward Voltage
IF = 30A Tj = 125°C 0.9
V
Tj = 25°C 24
trr Reverse Recovery Time
IF = 30A
VR = 133V
di/dt = 200A/µs Tj = 125°C 48
ns
Tj = 25°C 33
Qrr Reverse Recovery Charge
IF = 30A
VR = 133V
di/dt = 200A/µs Tj = 125°C 150 nC
APTC80A15SCT
APTC80A15SCT – Rev 01 May, 2004
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Parallel diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
IF(AV) Maximum Average Forward Current 50% duty cycle Tc = 125°C 15 A
Tj = 25°C 1.6 1.8
VF Diode Forward Voltage IF = 15A Tj = 175°C 2.6 3.0 V
QC Total Capacitive Charge IF = 15A, VR = 600V
di/dt =1000A/µs 42 nC
f = 1MHz, VR = 200V 135
Q Total Capacitance f = 1MHz, VR = 400V 99 pF
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
Transistor 0.45
Series diode 1.2
RthJC Junction to Case
Parallel diode 1.0
°C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100
°C
Torque Mounting torque To Heatsink M5 4.7 N.m
Wt Package Weight 160 g
Temperature sensor NTC
Symbol Characteristic Min Typ Max Unit
R25 Resistance @ 25°C 68
kW
B 25/85 T
25 = 298.16 K 4080 K
ú
û
ù
ê
ë
é
÷
÷
ø
ö
ç
ç
è
æ-
=
TT
B
R
RT
11
exp
25
85/25
25
Package outline
T: Thermistor temperature
RT: Thermistor value at T
APTC80A15SCT
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Typical CoolMOS Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0.00001 0.0001 0.001 0.01 0.1 1
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
4V
4.5V
5V
5.5V
6V
6.5V
0
10
20
30
40
50
60
70
80
0 5 10 15 20 25
VDS, Drain to Source Voltage (V)
I
D
, Drain Current (A)
VGS=15&10V
Low Voltage Output Characteristics Transfert Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
20
40
60
80
100
012345678
VGS, Gate to Source Voltage (V)
I
D
, Drain Current (A)
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.8
0.9
1
1.1
1.2
1.3
1.4
0 102030405060
ID, Drain Current (A)
R
DS
(on) Drain to Source ON Resistance
Normalized to
VGS=10V @ 14A
0
5
10
15
20
25
30
25 50 75 100 125 150
TC, Case Temperature (°C)
I
D
, DC Drain Current (A)
DC Drain Current vs Case Temperature
APTC80A15SCT
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0.90
0.95
1.00
1.05
1.10
1.15
-50 0 50 100 150
TJ, Junction Temperature (°C)
BV
DSS
, Drain to Source Breakdown
Volta
g
e
(
Normalized
)
Breakdown Voltage vs Temperature ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-50 0 50 100 150
TJ, Junction Temperature (°C)
R
DS
(on), Drain to Source ON resistance
(Normalized)
VGS=10V
ID= 14A
Threshold Voltage vs Temperature
0.7
0.8
0.9
1.0
1.1
1.2
-50 0 50 100 150
TC, Case Temperature (°C)
V
GS
(TH), Threshold Voltage
(Normalized)
Maximum Safe Operating Area
100ms
10ms
1ms
100µs
0
1
10
100
1000
1 10 100 1000
VDS, Drain to Source Voltage (V)
I
D
, Drain Current (A)
limited by
RDSon
Single pulse
TJ=150°C
Ciss
Crss
Coss
10
100
1000
10000
100000
0 1020304050
VDS, Drain to Source Voltage (V)
C, Capacitance (pF)
Capacitance vs Drain to Source Voltage
VDS=160V
VDS=400V
VDS=640V
0
2
4
6
8
10
12
14
16
0 40 80 120 160 200
Gate Charge (nC)
Gate Charge vs Gate to Source Voltage
V
GS
, Gate to Source Voltage (V)
ID=28A
TJ=25°C
APTC80A15SCT
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Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
100
10 20 30 40 50
ID, Drain Current (A)
td(on) and td(off) (ns)
VDS=533V
RG=2.5Ω
TJ=125°C
L=100µH
Rise and Fall times vs Current
tr
tf
0
10
20
30
40
50
10 20 30 40 50
ID, Drain Current (A)
t
r
and t
f
(ns)
VDS=533V
RG=2.5Ω
TJ=125°C
L=100µH
Switching Energy vs Current
Eon
Eoff
0
150
300
450
600
750
900
10 20 30 40 50
ID, Drain Current (A)
Eon and Eoff (µJ)
VDS=533V
RG=2.5Ω
TJ=125°C
L=100µH
Eon
Eoff
0
500
1000
1500
2000
2500
0 5 10 15 20 25
Gate Resistance (Ohms)
Switching Energy (µJ)
Switching Energy vs Gate Resistance
VDS=533V
ID=28A
TJ=125°C
L=100µH
0
50
100
150
200
250
300
350
400
6 8 10 12 14 16 18 20 22 24 26
ID, Drain Current (A)
Frequency (kHz)
Operating Frequency vs Drain Current
VDS=533V
D=50%
RG=2.5Ω
TJ=125°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.6 1 1.4 1.8
VSD, Source to Drain Voltage (V)
I
DR
, Reverse Drain Current (A)
Source to Drain Diode Forward Voltage
APTC80A15SCT
APTC80A15SCT – Rev 01 May, 2004
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Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.2
0.4
0.6
0.8
1
1.2
0.00001 0.0001 0.001 0.01 0.1 1
Rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Forward Characteristics
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
0
5
10
15
20
25
30
00.511.522.533.5
VF Forward Voltage (V)
I
F
Forward Current (A)
Reverse Characteristics
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
0
150
300
450
600
400 600 800 1000 1200 1400 1600
VR Reverse Voltage (V)
I
R
Reverse Current (µA)
Capacitance vs.Reverse Voltage
0
200
400
600
800
1000
1200
1 10 100 1000
VR Reverse Voltage
C, Capacitance (pF)
“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
