http://www.fujielectric.com/products/semiconductor/ FMV35N60S1FD FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Low on-state resistance Low switching loss easy to use (more controllabe switching dV/dt by Rg) Equivalent circuit schematic TO-220F(SLS) Drain(D) Applications UPS Server Telecom Power conditioner system Power supply Gate(G) Source(S) Connection 1 Gate 2 Drain 3 Source DIMENSIONS ARE IN MILLIMETERS. Absolute Maximum Ratings at TC =25C (unless otherwise specified) Description Symbol Drain-Source Voltage Characteristics Unit VDS 600 V VDSX 600 V VGS=-30V 35 A Tc=25C Note*1 22 A Tc=100C Note*1 Note*1 Continuous Drain Current ID Pulsed Drain Current Gate-Source Voltage IDP 105 A Remarks VGS 30 V Repetitive and Non-Repetitive Maximum Avalanche Current IAR 6.6 A Note *2 Non-Repetitive Maximum Avalanche Energy EAS 1239.6 mJ Note *3 Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt dVDS /dt 50 kV/s dV/dt 30 kV/s Note *4 -di/dt 100 A/s Note *5 Maximum Power Dissipation PD Operating and Storage Temperature range 2.16 W 110 Tch 150 C Tstg -55 to +150 C VDS 600V Ta =25C Tc=25C Note *1 : Limited by maximum channel temperature. Note *2 : Tch 150C, See Fig.1 and Fig.2 Note *3 : Starting Tch =25C, IAS=4A, L=142mH, VDD =60V, RG =50, See Fig.1 and Fig.2 E AS limited by maximum channel temperature and avalanche current. Note *4 : I F -I D, -di/dt=100A/s, VDS peak 600V, Tch 150C. Note *5 : I F -I D, dV/dt=30kV/s, VDS peak 600V, Tch 150C. Electrical Characteristics at TC =25C (unless otherwise specified) * Static Ratings Description Symbol Conditions Drain-Source Breakdown Voltage BVDSS Gate Threshold Voltage VGS(th) Zero Gate Voltage Drain Current IDSS min. typ. max. Unit ID =250A VGS=0V 600 - - V ID =1.3mA VDS=VGS 3.0 4.0 5.0 V VDS=600V VGS=0V Tch =25C - - 25 VDS=480V VGS=0V Tch =125C - 190 - A Gate-Source Leakage Current IGSS VGS= 30V VDS=0V - 10 100 nA Drain-Source On-State Resistance RDS(on) ID =17.5A VGS=10V - 0.089 0.105 Gate resistance RG f=1MHz, open drain - 1.1 - 1 8330 JANUARY 2014 FMV35N60S1FD FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/ * Dynamic Ratings Description Symbol Conditions min. typ. max. Unit Forward Transconductance gfs ID =17.5A VDS=25V 13.5 27 - S Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss VDS=400V VGS=0V f=250kHz - 2530 - - 75 - - 5.5 - Coss Crss Effective output capacitance, energy related (Note *6) Co(er) VGS=0V VDS=0...400V - 195 - Effective output capacitance, time related (Note *7) Co(tr) VGS=0V VDS=0...400V ID=constant - 670 - Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source crossover Charge td(on) tr td(off) tf QG QGS QGD QSW VDD =400V, VGS=10V ID =17.5A, RG =18 See Fig.3 and Fig.4 VDD =400V, ID =35A VGS=10V See Fig.5 pF - 116 - - 28 - - 163 - - 18 - - 92 - - 24.5 - - 38 - - 13 - min. typ. max. Unit 6.6 - - A - 1 1.35 V - 185 - ns - 1.3 - C - 14 - A min. typ. max. Unit C/W C/W ns nC Note *6 : C o(er) is a fixed capacitance that gives the same stored energy as C oss while VDS is rising from 0 to 400V. Note *7 : C o(tr) is a fixed capacitance that gives the same charging times as C oss while VDS is rising from 0 to 400V. * Reverse Diode Description Symbol Conditions Avalanche Capability IAV L=31.6mH,Tch =25C See Fig.1 and Fig.2 Diode Forward On-Voltage VSD IF=35A,VGS=0V Tch =25C Reverse Recovery Time trr Reverse Recovery Charge Qrr Peak Reverse Recovery Current Irp IF=35A, VDD =400V -di/dt=100A/s RG =150, Tch =25C See Fig.6 and Fig.7 Thermal Resistance Parameter Symbol Channel to Case Channel to Ambient Rth(ch-c) - - 1.14 Rth(ch-a) - - 58 2 FMV35N60S1FD FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/ Allowable Power Dissipation PD=f(Tc) 120 Safe Operating Area ID=f(VDS): Duty=0(Single pulse), Tc=25C t= 1s 100 110 100 10s 90 10 80 70 ID [A] PD [W] 60 50 100s 1 40 30 Power loss waveform : Square waveform 0.1 20 PD 10 t 0 0 25 50 75 100 125 1ms 0.01 150 0.1 1 10 VDS [V] Tc [C] Typical Output Characteristics ID=f(VDS): 80s pulse test, Tch=25C 110 100 10V 90 80 7V 40 7.5V 50 30 VGS=5.5V 10 VGS=6V 10 0 0 0 5 10 VDS [V] 15 20 0 25 Typical Drain-Source on-state Resistance RDS(on)=f(ID): 80s pulse test, Tch=25C 0.40 6V 6.5V 7V 8V 5 10 VDS [V] 15 20 25 Typical Drain-Source on-state Resistance RDS(on)=f(ID): 80s pulse test, Tch=150C 0.8 7.5V 0.35 5.5V 6V 6.5V 0.7 0.30 7V 0.6 0.25 7.5V 0.5 10V 8V RDS(on) [] RDS(on) [] 6V 20 6.5V 20 6.5V 30 7V 40 20V 7.5V 50 ID [A] ID [A] 60 10V 8V 60 8V 70 1000 Typical Output Characteristics ID=f(VDS): 80s pulse test, Tch=150C 70 20V 100 0.20 0.15 10V 0.4 0.3 VGS=20V VGS=20V 0.10 0.2 0.05 0.1 0.00 0.0 0 10 20 30 40 50 60 70 80 90 100 110 ID [A] 0 10 20 30 40 ID [A] 3 50 60 70 FMV35N60S1FD FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/ Drain-Source On-state Resistance RDS(on)=f(Tch): ID=17.5A, VGS=10V 0.3 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch): VDS=VGS, ID=1.3mA 6 5 typ. 4 VGS(th) [V] RDS(on) [] 0.2 max. 0.1 3 2 typ. 1 0.0 0 -50 -25 0 25 50 Tch [C] 75 100 125 150 -50 0 25 50 75 Tch [C] 100 125 150 Typical Transconductance gfs=f(ID): 80s pulse test, VDS=25V Typical Transfer Characteristic ID=f(VGS): 80s pulse test, VDS=25V 100 -25 100 Tch=25 10 150 Tch=25 150 gfs [S] ID[A] 10 1 1 0.1 0.1 0 1 2 3 4 5 VGS[V] 6 7 8 9 0.1 10 1 10 100 ID [A] Typical Forward Characteristics of Reverse Diode IF=f(VSD): 80s pulse test Typical Capacitance C=f(VDS): VGS=0V, f=250kHz 100000 100 10000 Ciss 10 IF [A] 150 C [pF] 1000 Tch=25 Coss 100 1 Crss 10 1 0.1 0.0 0.5 1.0 1.5 0.1 2.0 VSD [V] 1 10 VDS [V] 4 100 FMV35N60S1FD FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/ Typical Coss stored energy 25 10000 Typical Switching Characteristics vs. ID Tch=25C t=f(ID): Vdd=400V, VGS=10V/0V, RG=18 20 1000 td(on) t [ns] Eoss [uJ] 15 10 td(off) 100 tr 5 tf 0 10 0 10 100 200 300 400 500 0.1 600 1 10 100 VDS [V] ID [A] Typical Gate Charge Characteristics VGS=f(Qg): ID=35A, Tch=25C Maximum Avalanche Energy vs. startingTch E(AV)=f(starting Tch):Vcc=60V,I(AV)<=6.6A 3000 400V Vdd=480V 8 IAS=2A 2500 120V 2000 EAV [mJ] VGS [V] 6 4 1500 IAS=4A 1000 2 500 0 0 0 20 40 60 80 0 100 Transient Thermal Impedance Zth(ch-c)=f(t): D=0 101 100 10-1 10-2 10-3 10-6 10-5 10-4 10-3 25 50 75 starting Tch [C] Qg [nC] Zth(ch-c) [/W] IAS=6.6A 10-2 10-1 100 t [sec] 5 100 125 150 FMV35N60S1FD FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/ +10V L VGS -15V BVDSS Rg IAV VDD D.U.T VDS 0 Fig.1 Avalanche Test circuit ID Fig.2 Operating waveforms of Avalanche Test VDS L Diode VGS VDS x90% VDS x90% VGS x90% VDD RG D.U.T VDS x10% VDS x10% VGS x10% PG td(on) Fig.3 Switching Test circuit tr td(off) tf Fig.4 Operating waveform of Switching Test VGS,VDS VDS VGS QG 10V QSW QGS QGD Qg Fig.5 Operating waveform of Gate charge Test VDS peak IF D.U.T L VDS trr VDD RG Irpx10% Same as D.U.T PG Irp Fig.6 Reverse recovery Test circuit trr Qrr=0 irdt Fig.7 Operating waveform of Reverse recovery Test 6 FMV35N60S1FD FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/ Outview: TO-220F(SLS) Package Connection 1 Gate 2 Drain 3 Source DIMENSIONS ARE IN MILLIMETERS. Marking Trademark Country of origin mark. " " (Blank): Japan P : Philippines YMNNN 35F60S1 Date code & Lot No. Y: Last digit of year M: Month code 1~9 and O,N,D NNN: Lot. serial number Under bar of date code : means lead-free mark Type name * The font (font type,size) and the trademark-size might be actually different. 7 FMV35N60S1FD FUJI POWER MOSFET http://www.fujielectric.com/products/semiconductor/ WARNING 1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of January 2014. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. * Computers * OA equipment * Communications equipment (terminal devices) * Measurement equipment * Machine tools * Audiovisual equipment * Electrical home appliances * Personal equipment * Industrial robots etc. 5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. * Transportation equipment (mounted on cars and ships) * Trunk communications equipment * Traffic-signal control equipment * Gas leakage detectors with an auto-shut-off feature * Emergency equipment for responding to disasters and anti-burglary devices * Safety devices * Medical equipment 6.Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). * Space equipment * Aeronautic equipment * Nuclear control equipment * Submarine repeater equipment 7.Copyright (c)1996-2014 by Fuji Electric Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd. 8.If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein. 8