OM7921/BGA7210,598 - NXP Semiconductors

1. Product profile

1.1 General description

The BGA7210 MMIC is, also known as the BTS6001A, an extremely linear Variable Gain

Amplifier (VGA), operating from 0.7 GHz to 3.8 GHz. The maximum gain is 30 dB. It has

an attenuation range of 31.5 dB. At its minimum attenuation setting it has a maximum

output power of 21 dBm, an IP3O of 39 dBm and a noise figure of 6.5 dB.

The current consumption can be optimized per attenuation setting allowing for optimized

overall system performance. The curr ent consumption and attenuation level ar e controlled

through a Serial Peripheral Interface (SPI). The current can be reduced to 120 mA.

Optimal linearity performance is obtained at 185 mA. The BGA7210 has a fast switching

power-down pin to further reduce current consumption during idle time.

The BGA7210 has been designed and qualified for th e severe mission profile of cellular

base stations, but its outstanding RF performance and interfacing flexibility make it

suitable for a wide variety of applications.

The BGA7210 is housed in a 32 pins 5 mm  5 mm leadless HVQFN32 package.

1.2 Features and benefits

Operating frequency range from 0.7 GHz to 3.8 GHz

High gain of 30 dB

High IP3O of 39 dBm

Attenuation range of 31.5 dB with 0.5 dB step (6 bit)

Maximum output power of 21 dBm

Noise figure of 6.5 dB at maximum gain

ESD protection on all pins (HBM 4 kV; CDM 2 kV)

Fast switching power-save mode

Moisture sensitivity level 1

Compliant to Directive 2002/95/EC, rega rd in g Restr i ctio n of Haza rdou s Sub stances

(RoHS)

1.3 Applications

IF and RF applications

WiMAX and cellular base station s

Cable modem termination systems

Temperature compensation circuits

BGA7210

700 MHz to 3800 MHz high linearity variable gain amplifier

Rev. 5 — 20 January 2017 Product data sheet

HVQFN32

Product data sheet Rev. 5 — 20 January 2017 2 of 30

NXP Semiconductors BGA7210

700 MHz to 3800 MHz high linearity variable gain amplifier

1.4 Quick reference data

Table 1. Quick reference data

4.75 V



VSUP



5.25 V;







Tamb



+85



C; maximum current; input and output is terminated with 50



;

unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

VSUP supply voltage [1] 4.75 5.0 5.25 V

ICC(tot) total supply current maximum current 160 195 230 mA

optimized current [2] -185-mA

minimum current - 120 - mA

power-down current - 15 - mA

Tamb ambient temp erature 40 +25 +85 C

Gppower gain minimum attenuation

700 MHz  f  1400 MHz 26 30 33 dB

1400 MHz  f  1700 MHz 26 29.5 33 dB

1700 MHz  f  2200 MHz 26 29 33 dB

2200 MHz  f  2800 MHz 25 28 31 dB

3400 MHz  f  3800 MHz 22 26 30 dB

range attenuatio n range 700 MHz  f  2200 MHz 28 31.5 35 dB

2200 MHz  f  2800 MHz 27 30.5 34 dB

3400 MHz  f  3800 MHz 26 29.5 33 dB

NF noise figure minimum attenuation

700 MHz  f  2200 MHz - 6.5 8.5 dB

2200 MHz  f  2800 MHz - 7 9 dB

3400 MHz  f  3800 MHz - 8 10 dB

maximum attenuation

700 MHz  f  2200 MHz - 27.5 30.5 dB

2200 MHz  f  2800 MHz - 28 31 dB

3400 MHz  f  3800 MHz - 28.5 32 dB

IP3Ooutput third-order intercept point minimum attenuation [3]

700 MHz  f  1400 MHz 34 39 - dBm

1400 MHz  f  1700 MHz 32 37 - dBm

1700 MHz  f  2200 MHz 30 35 - dBm

2200 MHz  f  2800 MHz 28 34 - dBm

2200 MHz  f  2800 MHz; Csh =0.68pF [4] 30 35 - dBm

3400 MHz  f  3800 MHz 24 30 - dBm

maximum attenuation [3]

700 MHz  f  1400 MHz - 35 - dBm

1400 MHz  f  1700 MHz - 33 - dBm

1700 MHz  f  2200 MHz - 31 - dBm

2200 MHz  f  2800 MHz - 30 - dBm

2200 MHz  f  2800 MHz; Csh =0.68pF [4] -30-dBm

3400 MHz  f  3800 MHz - 25 - dBm

Product data sheet Rev. 5 — 20 January 2017 3 of 30

NXP Semiconductors BGA7210

700 MHz to 3800 MHz high linearity variable gain amplifier

[1] Supply voltage on pins RF_OUT, VCC2, VDDA, VCC1 and VDDD.

[2] See Section 9.2.

[3] Pi = 23 dBm per tone; f = 10 MHz.

[4] See Section 11.

2. Pinning information

2.1 Pinning

2.2 Pin description

PL(1dB) output power at 1 dB gain compression minimum attenuation

700 MHz  f  2800 MHz 18 21 - dBm

2200 MHz  f  2800 MHz; Csh =0.68pF [4] 20 23 - dBm

3400 MHz  f  3800 MHz 16 19 - dBm

Table 1. Quick reference data …continued

4.75 V



VSUP



5.25 V;







Tamb



+85



C; maximum current; input and output is terminated with 50



;

unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Transparent top view

Fig 1. Pin configuration

aaa-000658

BGA7210

Transparent top view

VCC1

GND

GND VDDD

GND SER_OUT

GND SS

GND SER_IN

GND CLK

GND PUPMXG/PWRDN

GND

n.c.

RF_OUT

GND

VCC2

VDDA

GND

n.c.

RF_IN

GND

817

718

619

520

421

322

223

124

terminal 1

index area

Table 2. Pin description

Symbol Pin Description

GND 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 13,

14, 18, 25, 26, 27, 28, 31, 32 Ground

n.c. 11, 30 not connected

RF_OUT 12 RF output and supply to amplifier 2

VCC2 15 Supply voltage to amplifier 2

VDDA 16 Analog supply voltage to DSA

Product data sheet Rev. 5 — 20 January 2017 4 of 30

NXP Semiconductors BGA7210

700 MHz to 3800 MHz high linearity variable gain amplifier

3. Ordering information

4. Marking

5. Limiting values

[1] Absolute maximum DC voltage on pins RF_OUT, VCC2, VDDA, VCC1, VDDD and RF_IN.

[2] Absolute maximum DC voltage on pins SS, SER_IN, CLK and PUPMXG/PWRDN.

VCC1 17 Supply voltage to amplifier 1

VDDD 19 Digital supply voltage to digital controller

SER_OUT 20 SPI data output

SS 21 SPI slave select (0 = select; 1 = deselect)

SER_IN 22 SPI data input

CLK 23 SPI clock input

PUPMXG/PWRDN 24 Power-up gain attenuation / power down

RF_IN 29 RF input

Table 2. Pin description …continued

Symbol Pin Description

Table 3. Ordering i nformation

Type number Package

Name Description Version

BGA7210 HVQFN32 plastic thermal enhanced very thin quad flat package;

no leads; 32 terminals; body 5  5  0.85 mm SOT617-3

Table 4. Marking

Type number Marking code

BGA7210 7210

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VSUP supply voltage [1] 0.6 +8 V

VIinput voltage [2] 0.6 +8 V

VOoutput voltage [3] 0.6 +8 V

IIinput current [4] 20 +20 mA

IOoutput current [5] 20 +20 mA

PRFIN power on pin RF_IN -30dBm

Tstg storage temperature 65 +150 C

Tjjunction temperature - 150 C

VESD electrostatic

discharge voltage Human Body Model (HBM); According

to JEDEC standard 22-A114E -4kV

Charged Device Model (CDM); According

to JEDEC standard 22-C101B -2kV

Product data sheet Rev. 5 — 20 January 2017 5 of 30

NXP Semiconductors BGA7210

700 MHz to 3800 MHz high linearity variable gain amplifier

[3] Absolute maximum DC voltage on pin SER_OUT.

[4] Absolute maximum DC current through pins SS, SER_IN, CLK and PUPMXG/PWRDN.

[5] Absolute maximum DC current through pin SER_OUT.

6. Thermal characteristics

[1] Tsp is the temperature at the solder point.

7. Static characteristics

[1] Supply voltage on pins RF_OUT, VCC2, VDDA, VCC1 and VDDD.

[2] See Section 9.2.

[3] Digital input pins are: SS, SER_IN, CLK and PUPMXG/PWRDN.

[4] Digital output pin is: SER_OUT.

Table 6. Thermal characteris tics

Symbol Parameter Conditions Typ Unit

Rth(j-sp) thermal resistance from junction to solde r po int Tsp 85 C[1] 16 K/W

Table 7. Static characteristics

Symbol Parameter Conditions Min Typ Max Unit

VSUP supply voltage [1] 4.75 5.0 5.25 V

ICC(tot) total supply current maximum 160 195 230 mA

optimized current [2] - 185 - mA

minimum current - 120 - mA

power-down current - 15 - mA

Tamb ambient temperature 40 +25 +85 C

ICC supply current on pin RF_OUT - 85 - mA

supply current on pin VCC2 -45- mA

supply current on pin VDDA -5- mA

supply cur rent on pin VCC1 -55- mA

supply cur rent on pin VDDD -5- mA

VIL LOW-level input voltage [3] 0.1 0 +0.8 V

VIH HIGH-level input voltage [3] 23.3V

SUP + 0.1 V

VOL LOW-level output voltage [4] 0.1 0 +0.8 V

VOH HIGH-level output voltage [4] 2.5 3.3 3.4 V

IOL LOW-level output current [4] 15 - 0 mA

IOH HIGH-level output current [4] 0-15 mA

Product data sheet Rev. 5 — 20 January 2017 6 of 30

NXP Semiconductors BGA7210

700 MHz to 3800 MHz high linearity variable gain amplifier

8. Dynamic characteristics

Table 8. Dynamic character istics

4.75 V



VSUP



5.25 V;







Tamb



+85



C; maximum current; input and output terminated with 50



unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Gppower gain minimum attenuation

700 MHz  f  1400 MHz 26 30 33 dB

1400 MHz  f  1700 MHz 26 29.5 33 dB

1700 MHz  f  2200 MHz 26 29 33 dB

2200 MHz  f  2800 MHz 25 28 31 dB

3400 MHz  f  3800 MHz 22 26 30 dB

G/T gain variation with

temperature 0.03 0.006 0 dB/C

G/VSUP gain variation with

supply voltage 0.2 - +0.2 dB/V

range attenuation range 700 MHz  f  2200 MHz 28 31.5 35 dB

2200 MHz  f  2800 MHz 27 30.5 34 dB

3400 MHz  f  3800 MHz 26 29.5 33 dB

step attenuation step 700 MHz  f  2800 MHz 0 0.5 1 dB

3400 MHz  f  3800 MHz 0 0.5 1.2 dB

Gppower gain variation 700 MHz  f  3800 MHz [1] 1.5 - +1.5 dB

700 MHz  f  2200 MHz [2] (0.5 +

0.025 i)-+(0.5+

0.025 i)dB

2200 MHz  f  2800 MHz [2] (0.3 +

0.025 i)-+(0.3+

0.025 i)dB

3400 MHz  f  3800 MHz [2] (0.5 +

0.025 i)-+(0.5+

0.025 i)dB

Gp(flat) power gain flatness 700 MHz  f  3800 MHz; per 200 MHz - - 1 dB

RLin input return loss 700 MHz  f  3800 MHz 10 - - dB

RLout output return loss 700 MHz  f  3800 MHz 7 - - dB

2200 MHz  f  2800 MHz; Csh =0.68pF 10 - - dB

NF noise figure minimum attenuation

700 MHz  f  2200 MHz - 6.5 8.5 dB

2200 MHz  f  2800 MHz - 7 9 dB

3400 MHz  f  3800 MHz - 8 10 dB

maximum attenuation

700 MHz  f  2200 MHz - 27.5 30.5 dB

2200 MHz  f  2800 MHz - 28 31 dB

3400 MHz  f  3800 MHz - 28.5 32 dB

Product data sheet Rev. 5 — 20 January 2017 7 of 30

NXP Semiconductors BGA7210

700 MHz to 3800 MHz high linearity variable gain amplifier

[1] Normalized to maximum gain and attenuation.

[2] i specifies the decimal attenuation step, ranging from 0 to 63.

[3] Pi = 23 dBm per tone; f = 10 MHz.

[4] See Section 11.

[5] To within 0.1 dB of final gain state.

[6] After last SPI bit is clocked in.

9. Serial Peripheral Interface

9.1 Command word format

The Serial Peripher al Interface (SPI) operate s in mode 0. This means that when the SPI is

inactive the clock pin is logically LOW . When th e SPI interface is active the data is clocke d

in at the rising edge of the clock pulse; data is clocked out at the negative edge. The

IP3Ooutput third-order

intercept point minimum attenuation [3]

700 MHz  f  1400 MHz 34 39 - dBm

1400 MHz  f  1700 MHz 32 37 - dBm

1700 MHz  f  2200 MHz 30 35 - dBm

2200 MHz  f  2800 MHz 28 33 - dBm

2200 MHz f2800 MHz; Csh =0.68pF [4] 30 35 - dBm

3400 MHz  f  3800 MHz 24 27 - dBm

maximum attenuation [3]

700 MHz  f  1400 MHz - 35 - dBm

1400 MHz  f  1700 MHz - 33 - dBm

1700 MHz  f  2200 MHz - 31 - dBm

2200 MHz  f  2800 MHz - 30 - dBm

2200 MHz  f  2800 MHz; Csh =0.68pF [4] -30-dBm

3400 MHz  f  3800 MHz - 25 - dBm

PL(1dB) output power at

1dB

gain compression

minimum attenuation

700 MHz  f  2800 MHz 18 21 - dBm

2200 MHz  f  2800 MHz; Csh =0.68pF [4] 20 23 - dBm

3400 MHz  f  3800 MHz 16 19 - dBm

maximum attenuation

700 MHz  f  2800 MHz - 20 - dBm

2200 MHz  f  2800 MHz; Csh =0.68pF [4] -20-dBm

3400 MHz  f  3800 MHz - 16 - dBm

td(pd) power-down delay

time [5] -100-ns

td(pu) power-up delay time [5] -5-s

tresp()attenuation

response time [5][

6] -100-ns

Table 8. Dynamic character istics …continued

4.75 V



VSUP



5.25 V;







Tamb



+85



C; maximum current; input and output terminated with 50



unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Product data sheet Rev. 5 — 20 January 2017 8 of 30

NXP Semiconductors BGA7210

700 MHz to 3800 MHz high linearity variable gain amplifier

control word length is 12 bits (see Figure 2), however the word length can be extended

appropriately with trailing zeros (see Figure 3).

The word written on the input (SER_IN) will be replicated on the output (SER_OUT)

9.2 Setting current and attenuation

The current and attenuation are set by bits D9 to D0 and are preceded by the command

bits C0 an d C1, wh ich are a lways se t to log ic LOW, see Figure 4. If all bit s are set to logic

LOW (0x000) then current is at maximum and attenuation is at minimum; if all bits are set

to logic HIGH (0x3FF) then current is at minimum and attenuation is at maximum.

Depending on the attenuation setting the curre nt through the first amplifier and the second

amplifier can be optimized, without compromising on linearity. At attenuations less than

9 dB the current in the first amplifier can be reduced with 10 mA; at attenuations equal or

larger than 9 dB the current in the second amplifier can be reduced by 15 mA.

Fig 2. Timing diagram for 12-bit word

aaa-000659

C1 C0 D7 D6 D5 D4

CLK

SERIN

SEROUT

D3 D2 D1 D0

NEW STATEOLD CURRENT AND ATTENUATION STATE

D9 D8

Fig 3. Timing diagram for 12-bit word length followed by four ignored trailing bits

aaa-000660

NEW STATEOLD CURRENT AND ATTENUATION STATE

C1 C0 D7 D6 D5 D4

D3 D2 D1 D0

D9 D8

CLK

SERIN

SEROUT

Fig 4. Command to set current of the first amplifier (D9, D8); second amplifier (D7, D6) and

attenuation (D5, ... , D2)

aaa-000661

00 00 ... 11 00 ... 11 000000 ... 111111

command Iamp1 Iamp2 attenuation

C0 D7 D6 D5 D4 D3 D2 D1 D0

D9 D8

CLK

SERIN/OUT

SET

Product data sheet Rev. 5 — 20 January 2017 9 of 30

NXP Semiconductors BGA7210

700 MHz to 3800 MHz high linearity variable gain amplifier

9.3 SPI timing

Table 9. Current first amplifier truth table

D9, D8 Current reduction (mA)

0x0 0

0x1 10

0x2 20

0x3 30

Table 10. Current second amplifier truth table

D7, D6 Current reduction (mA)

0x0 0

0x1 15

0x2 30

0x3 45

Table 11. Attenuation truth table; major states only

D5, D4, D3, D2, D1, D0 Attenuation (dB)

0x00 0

0x01 0.5

0x02 1

0x04 2

0x08 4

0x10 8

0x20 16

0x3F 31.5

Fig 5. Timi ng diagram

aaa-000662

CLK

C1 C0 D7 D6 D5 D4

SERIN/OUT

h(SS)

su(SS)

D3 D2 D1 D0

D9 D8

Table 12. SPI timing

4.75 V



VSUP



5.25 V;







Tamb



+85



C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

fSPI SPI frequency 0.1 - 20 MHz

tsu set-up time 10 - - ns

thhold time 10 - - ns

tsu(SS) set-up time on pin SS 10 - - ns

th(SS) hold time on pin SS 10 + 11 / fSPI -- ns

Product data sheet Rev. 5 — 20 January 2017 10 of 30

NXP Semiconductors BGA7210

700 MHz to 3800 MHz high linearity variable gain amplifier

10. Power-up and power save

The PUPMXG/PWRDN pin determines the attenuation a nd current s at st art-up of the chip

(see Table 13). After start-up it can be used to power-down the device.

11. Application information

11.1 Application board

A customer application board is available from NXP upon request. It includes USB

interface circuitry and customer software to facilitate evaluation of the BGA7210.

The final application shall be terminated with 50  and decoupled as depicted in Figure 7.

The ground leads and exposed paddle should be connected directly to the ground plane.

A sufficient number o f via h oles should be provided to connect the top and bottom groun d

planes in the final application board. Sufficient cooling should be provided that the

temperature of the expo sed die pad does not exceed 85 C.

Fig 6. PUPMXG/PWRDN

aaa-000664

PUPMXG/

PWRDN

POR

STATE UNDEFINED PUPMXG = 1 ON OFF ON OFF ON

UNDEFINED PUPMXG = 0 OFF ON OFF ON OFF

PUPMXG/

PWRDN

POR

STATE

Table 13. Power-up truth table

PUPMXG/PWRDN Current Attenuation

(mA) (dB)

012031.5

11950

Product data sheet Rev. 5 — 20 January 2017 11 of 30

NXP Semiconductors BGA7210

700 MHz to 3800 MHz high linearity variable gain amplifier

The recommende d FR4 PCB layer stack is described in Figure 8. A 50  coplanar

grounded wave guide can be implemented by a 0.48 mm RF track and a clearance

between the track and the ground planes of 1 mm on both sides.

See Table 14 for list of components.

Fig 7. Schematic represen tation of the customer evaluation bo ard

aaa-000665

C23

C26

C25

RF_OUT

Csh

C24

C27

C22

C12

C14

1920 17 16

1229

DDA

CC1

DDD

SEROUTSERINCLK

PUPMXG/

PWRDN SS

CC2

RF_OUTRF_IN

C18

SUP

C17

21222324

Table 14. List of compon ents

See Figure 7 for schematics.

Component Description Value Remarks

C1, C27 DC blocking capacitor 100 pF Murata GRM

C12 decoupling capacitor 100 nF cl ose to pin 19

C14 decoupling capacitor 100 nF cl ose to pin 17

C17 decoupling capacitor 100 nF cl ose to pin 15

C18 decoupling capacitor 100 nF cl ose to pin 16

C22 optional decoupling capacitor 10 F part of optional ripple filter

C23 optional decoupling capacitor 10 F part of optional ripple filter

C24 decoupling capacitor 100 pF

C25 decoupling capacitor 100 nF

C26 decoupling capacitor 4.7 F

Csh optional matching capacitor to improve

linearity at 2.2 GHz to 2.8 GHz 0.68 pF Murata GRM; shall be located 5.5 mm from pin

RF-OUT when using FR4 PCB described below.

L1 optio nal inductor 820 nH part of optional ripple filter

L2 inductor 22 nH Murata LQW 18

Product data sheet Rev. 5 — 20 January 2017 12 of 30

NXP Semiconductors BGA7210

700 MHz to 3800 MHz high linearity variable gain amplifier

r = 4.5; interconnect 35 m copper.

Fig 8. Printed-Circuit Board (PCB) layer stack

aaa-000666

0.30 mm core

0.28 mm FR4

through via

RF and analog ground

analog routing

RF and analog ground

RF and analog routing

Product data sheet Rev. 5 — 20 January 2017 13 of 30

NXP Semiconductors BGA7210

700 MHz to 3800 MHz high linearity variable gain amplifier

11.2 Characteristics

VSUP = 5 V; maximum current setting.

(1) Tamb = 40 C

(2) Tamb = +25 C

(3) Tamb = +85 C

VSUP = 5 V; maximum current setting and shunt

capacitor (Csh).

(1) Tamb = 40 C

(2) Tamb = +25 C

(3) Tamb = +85 C

Fig 9. Maximum power gain as a function of

frequency; typical values Fig 10. Maximum power gain with shunt capacitor as a

function of frequency; typical val ues

f (GHz)

054231

aaa-000667

S21

(dB)

(1)

(2)

(3)

f (GHz)

054231

aaa-000668

S21

(dB)

(1)

(2)

(3)

Product data sheet Rev. 5 — 20 January 2017 14 of 30

NXP Semiconductors BGA7210

700 MHz to 3800 MHz high linearity variable gain amplifier

VSUP = 5 V; Tamb = 25 C; maximum current setting.

(1) f = 0.7 GHz

(2) f = 1.4 GHz

(3) f = 1.7 GHz

(4) f = 2.2 GHz

(5) f = 2.8 GHz

(6) f = 2.8 GHz and Csh used

(7) f = 3.8 GHz

VSUP = 5 V; maximum current setting.

(1) Tamb = 40 C

(2) Tamb = +25 C

(3) Tamb = +85 C

Fig 11. Power gain as a function of attenuation state;

typical valu e s Fig 12. Power gain range as a function of frequency;

typical values

attenuation (decimal)

0644816 32

aaa-000669

S21

(dB)

-5

(1)

(2)

(3)

(4)

(5)

(6)

(7)

f (GHz)

054231

aaa-000670

∆Gp

(dB)

(1)

(2)

(3)

Product data sheet Rev. 5 — 20 January 2017 15 of 30

NXP Semiconductors BGA7210

700 MHz to 3800 MHz high linearity variable gain amplifier

VSUP = 5 V; Tamb = 25 C; maximum current setting.

(1) f = 0.7 GHz

(2) f = 1.4 GHz

(3) f = 1.7 GHz

(4) f = 2.2 GHz

(5) f = 2.8 GHz

(6) f = 2.8 GHz and Csh used

(7) f = 3.8 GHz

VSUP = 5 V; Tamb = 25 C; maximum current setting.

(1) f = 0.7 GHz; range = 31.5 dB

(2) f = 1.4 GHz; range = 31.5 dB

(3) f = 1.7 GHz; range = 31.5 dB

(4) f = 2.2 GHz; range = 31.5 dB

(5) f = 2.2 GHz; range = 30.5 dB

(6) f = 2.8 GHz; range = 30.5 dB

(7) f = 2.8 GHz; range = 29.5 dB

(8) f = 3.8 GHz; range = 29.5 dB

Fig 13. Gain step size as a function of attenuation

state; typical values Fig 14. Power gain accuracy as a function of

attenuation state; typical values

attenuation (decimal)

0644816 32

aaa-000671

-0.6

-0.4

-0.8

-0.2

0.0

-1.0

(1)

(2)

(3)

(4)

(5)

(6)

(7)

gain step size

(dB)

attenuation (decimal)

0644816 32

aaa-000672

-1

-2

(8)

(6)

(4)

(3)

(2)

(1)

(5)

(7)

gain accuracy

(dB)

+(0.5 + 0.025 x iα)

-(0.5 + 0.025 x i

)

Product data sheet Rev. 5 — 20 January 2017 16 of 30

NXP Semiconductors BGA7210

700 MHz to 3800 MHz high linearity variable gain amplifier

VSUP = 5 V; maximum current setting;

minimum attenuation.

(1) Tamb = 40 C

(2) Tamb = +25 C

(3) Tamb = +85 C

VSUP = 5 V; maximum current setting;

minimum attenuation.

(1) Tamb = 40 C

(2) Tamb = +25 C

(3) Tamb = +85 C

Fig 15. Input return loss as a function of frequency;

typical valu e s Fig 16. Output return loss as a function of frequency;

typical values

f (GHz)

054231

aaa-000673

-25

-15

-5

S11

(dB)

-35

(1)

(2)

(3)

f (GHz)

054231

aaa-000674

-25

-15

-5

S22

(dB)

-35

(1)

(2)

(3)

Product data sheet Rev. 5 — 20 January 2017 17 of 30

NXP Semiconductors BGA7210

700 MHz to 3800 MHz high linearity variable gain amplifier

VSUP = 5 V; Tamb = 25 C; maximum current setting.

(1) attenuation = 0x00 (minimum)

(2) attenuation = 0x01

(3) attenuation = 0x02

(4) attenuation = 0x04

(5) attenuation = 0x08

(6) attenuation = 0x10

(7) attenuation = 0x20

(8) attenuation = 0x3F (maximum)

VSUP = 5 V; Tamb = 25 C; maximum current setting.

(1) attenuation = 0x00 (minimum)

(2) attenuation = 0x01

(3) attenuation = 0x02

(4) attenuation = 0x04

(5) attenuation = 0x08

(6) attenuation = 0x10

(7) attenuation = 0x20

(8) attenuation = 0x3F (maximum)

Fig 17. Input return loss as a function of frequency;

typical valu e s Fig 18. Output return loss as a function of frequency;

typical values

f (GHz)

054231

aaa-000675

-30

-20

-40

-10

S11

(dB)

-50

(1)

(2)

(3)

(4)

(5)

(6)

(7)

(8)

f (GHz)

054231

aaa-000676

-30

-20

-40

-10

S22

(dB)

-50

(1)

(2)

(3)

(4)

(5)

(6)

(7)

(8)

Product data sheet Rev. 5 — 20 January 2017 18 of 30

NXP Semiconductors BGA7210

700 MHz to 3800 MHz high linearity variable gain amplifier

VSUP = 5 V; Tamb = 25 C; maximum current setting and

shunt capacitor (Csh).

(1) attenuation = 0x00 (minimum)

(2) attenuation = 0x01

(3) attenuation = 0x02

(4) attenuation = 0x04

(5) attenuation = 0x08

(6) attenuation = 0x10

(7) attenuation = 0x20

(8) attenuation = 0x3F (maximum)

VSUP = 5 V; Tamb = 25 C; maximum current setting and

shunt capacitor (Csh).

(1) attenuation = 0x00 (minimum)

(2) attenuation = 0x01

(3) attenuation = 0x02

(4) attenuation = 0x04

(5) attenuation = 0x08

(6) attenuation = 0x10

(7) attenuation = 0x20

(8) attenuation = 0x3F (maximum)

Fig 19. Input return loss with shunt capacitor as a

function of frequency ; typ ic al values Fig 20. Output return loss with shunt capacitor as a

function of frequency; typical val ues

f (GHz)

054231

aaa-000677

-30

-20

-40

-10

S11

(dB)

-50

(1)

(2)

(3)

(4)

(5)

(6)

(7)

(8)

f (GHz)

054231

aaa-000678

-30

-20

-40

-10

S22

(dB)

-50

(1)

(2)

(3)

(4)

(5)

(6)

(7)

(8)

Product data sheet Rev. 5 — 20 January 2017 19 of 30

NXP Semiconductors BGA7210

700 MHz to 3800 MHz high linearity variable gain amplifier

VSUP = 5 V; Tamb = 40 C; maximum current setting.

(1) f = 0.7 GHz

(2) f = 1.4 GHz

(3) f = 1.7 GHz

(4) f = 2.2 GHz

(5) f = 2.8 GHz

(6) f = 2.8 GHz and Csh used

(7) f = 3.8 GHz

VSUP = 5 V; Tamb = 25 C; maximum current setting.

(1) f = 0.7 GHz

(2) f = 1.4 GHz

(3) f = 1.7 GHz

(4) f = 2.2 GHz

(5) f = 2.8 GHz

(6) f = 2.8 GHz and Csh used

(7) f = 3.8 GHz

Fig 21. Output third-order in tercept point as a functi on

of attenuation state; typical values Fig 22. Output third-order intercept point as a function

of attenuatio n state; typical values

attenuation (decimal)

0644816 32

aaa-000679

IP3o

(dBm)

(1)

(2)

(3)

(4)

(5)

(6)

(7)

attenuation (decimal)

0644816 32

aaa-000680

IP3o

(dBm)

(1)

(2)

(3)

(4)

(5)

(6)

(7)

Product data sheet Rev. 5 — 20 January 2017 20 of 30

NXP Semiconductors BGA7210

700 MHz to 3800 MHz high linearity variable gain amplifier

VSUP = 5 V; Tamb = 85 C; maximum current setting.

(1) f = 0.7 GHz

(2) f = 1.4 GHz

(3) f = 1.7 GHz

(4) f = 2.2 GHz

(5) f = 2.8 GHz

(6) f = 2.8 GHz and Csh used

(7) f = 3.8 GHz

VSUP = 5 V; Tamb = 25 C; minimal current setting.

(1) f = 0.7 GHz

(2) f = 1.4 GHz

(3) f = 1.7 GHz

(4) f = 2.2 GHz

(5) f = 2.8 GHz

(6) f = 2.8 GHz and Csh used

(7) f = 3.8 GHz

Fig 23. Output third-order in tercept point as a functi on

of attenuation state; typical values Fig 24. Output third-order intercept point as a function

of attenuatio n state; typical values

attenuation (decimal)

0644816 32

aaa-000682

IP3o

(dBm)

(1)

(2)

(3)

(4)

(5)

(6)

(7)

attenuation (decimal)

0644816 32

aaa-000683

IP3o

(dBm)

(1)

(2)

(3)

(4)

(5)

(6)

(7)

Product data sheet Rev. 5 — 20 January 2017 21 of 30

NXP Semiconductors BGA7210

700 MHz to 3800 MHz high linearity variable gain amplifier

VSUP = 5 V; Tamb = 25 C; maximum gain;

maximum current through second amplifier.

(1) f = 0.7 GHz

(2) f = 1.4 GHz

(3) f = 1.7 GHz

(4) f = 2.2 GHz

(5) f = 2.8 GHz

(6) f = 2.8 GHz and Csh used

(7) f = 3.8 GHz

VSUP = 5 V; Tamb = 25 C; maximum gain;

maximum current through first amplifier.

(1) f = 0.7 GHz

(2) f = 1.4 GHz

(3) f = 1.7 GHz

(4) f = 2.2 GHz

(5) f = 2.8 GHz

(6) f = 2.8 GHz and Csh used

(7) f = 3.8 GHz

Fig 25. Output third-order in tercept point as a functi on

of relative current throug h f irst amp li fie r;

typical valu e s

Fig 26. Output third-order intercept point as a function

of relative current through second amplifier;

typical values

relative current through first amplifier (mA)

-30 0-10-20

aaa-000685

IP3o

(dBm)

(1)

(2)

(3)

(4)

(5)

(6)

(7)

relative current through second amplifier (mA)

-50 0-10-30 -20-40

aaa-000687

IP3o

(dBm)

(1)

(7)

(2)

(3)

(5)

(6)

(4)

Product data sheet Rev. 5 — 20 January 2017 22 of 30

NXP Semiconductors BGA7210

700 MHz to 3800 MHz high linearity variable gain amplifier

VSUP = 5 V; Tamb = 25 C; minimum gain;

maximum current through second amplifier.

(1) f = 0.7 GHz

(2) f = 1.4 GHz

(3) f = 1.7 GHz

(4) f = 2.2 GHz

(5) f = 2.8 GHz

(6) f = 2.8 GHz and Csh used

(7) f = 3.8 GHz

VSUP = 5 V; Tamb = 25 C; minimum gain;

maximum current through first amplifier.

(1) f = 0.7 GHz

(2) f = 1.4 GHz

(3) f = 1.7 GHz

(4) f = 2.2 GHz

(5) f = 2.8 GHz

(6) f = 2.8 GHz and Csh used

(7) f = 3.8 GHz

Fig 27. Output third-order in tercept point as a functi on

of relative current throug h f irst amp li fie r;

typical valu e s

Fig 28. Output third-order intercept point as a function

of relative current through second amplifier;

typical values

relative current through first amplifier (mA)

-30 0-10-20

aaa-000689

IP3o

(dBm)

(1)

(2)

(3)

(4)

(5)

(6)

(7)

relative current through second amplifier (mA)

-50 0-10-30 -20-40

aaa-000690

IP3o

(dBm)

(1)

(7)

(2)

(3)

(5)

(6)

(4)

Product data sheet Rev. 5 — 20 January 2017 23 of 30

NXP Semiconductors BGA7210

700 MHz to 3800 MHz high linearity variable gain amplifier

VSUP = 5 V; Tamb = 25 C.

(1) IAMP1 / IAMP2 = 0 mA / 15 mA

(2) IAMP1 / IAMP2 = 10 mA / 0 mA

VSUP = 5 V; Tamb = 25 C; f = 2.8 GHz.

(1) IAMP1 / IAMP2 = Iopt

(2) IAMP1 / IAMP2 = 0 mA / 0 mA

(3) IAMP1 / IAMP2 = 0 mA / 15 mA

(4) IAMP1 / IAMP2 = 10 mA / 0 mA

Fig 29. Total current as a function of attenuation state

optimized for IP3O; typical values Fig 30. Output third-order intercept point as a function

of attenuatio n state; typical values

VSUP = 5 V; maximum current through second amplifier.

(1) IAMP1 = 0 mA

(2) IAMP1 = 10 mA

(3) IAMP1 = 20 mA

(4) IAMP1 = 30 mA

VSUP = 5 V; maximum current through first amplifier.

(1) IAMP2 = 0 mA

(2) IAMP2 = 10 mA

(3) IAMP2 = 20 mA

(4) IAMP2 = 30 mA

Fig 31. Total current as a function of ambient

temperature; typical values Fig 32. Total current as a function of ambient

temperature; typical value s

attenuation (decimal)

0644816 32

aaa-000692

180

170

190

200

160

Itot

(mA)

(1)

(2)

attenuation (decimal)

0644816 32

aaa-000693

IP3o

(dBm)

(1)

(2)

(3)

(4)

Tamb (°C)

-40 856010 35-15

aaa-000694

170

180

160

190

200

Itot

(mA)

150

(1)

(2)

(3)

(4)

Tamb (°C)

-40 856010 35-15

aaa-000695

170

180

160

190

200

Itot

(mA)

150

(1)

(2)

(3)

(4)

Product data sheet Rev. 5 — 20 January 2017 24 of 30

NXP Semiconductors BGA7210

700 MHz to 3800 MHz high linearity variable gain amplifier

VSUP = 5 V; Tamb = 85 C; maximum current setting;

attenuation states 0, 7, 15, 23, 31, 39, 47, 55 and 63 are

depicted.

(1) f = 0.7 GHz

(2) f = 1.4 GHz

(3) f = 1.7 GHz

(4) f = 2.2 GHz

(5) f = 2.8 GHz

(6) f = 2.8 GHz and Csh used

(7) f = 3.8 GHz

VSUP = 5 V; Tamb = 25 C; maximum current setting.

(1) attenuation = 0x00 (minimum)

(2) attenuation = 0x01

(3) attenuation = 0x02

(4) attenuation = 0x04

(5) attenuation = 0x08

(6) attenuation = 0x10

(7) attenuation = 0x20

(8) attenuation = 0x3F (maximum)

Fig 33. Output power at 1 dB gain compr e ss ion as a

function of attenuation state; typical values Fig 34. Relative phase as a function of frequency;

typical values

attenuation (decimal)

0644816 32

aaa-000696

(1)

(2)

(3)

(4)

(5)

(6)

(7)

PL(1dB)

(dBm)

f (GHz)

054231

aaa-000697

-10

relative phase

(deg)

(4)

(1)

(2)

(3)

(5)

(6)

(7)

(8)

Product data sheet Rev. 5 — 20 January 2017 25 of 30

NXP Semiconductors BGA7210

700 MHz to 3800 MHz high linearity variable gain amplifier

VSUP = 5 V; Tamb = 25 C; maximum current setting.

(1) f = 0.7 GHz

(2) f = 1.4 GHz

(3) f = 1.7 GHz

(4) f = 2.2 GHz

(5) f = 2.8 GHz

(6) f = 2.8 GHz and Csh used

(7) f = 3.8 GHz

VSUP = 5 V; maximum gain and maximum current

setting.

(1) Tamb = 40 C

(2) Tamb = +25 C

(3) Tamb = +85 C

Fig 35. Noise figu re as a func tion of atten uatio n state;

typical valu e s Fig 36. Noise figure as a function of frequency; typical

values

attenuation (decimal)

0644816 32

aaa-000698

(dB)

-5

(1)

(2)

(3)

(4)

(5)

(6)

(7)

10 + 70 % x α

f (GHz)

054231

aaa-000699

(dB)

(1)

(2)

(3)

Product data sheet Rev. 5 — 20 January 2017 26 of 30

NXP Semiconductors BGA7210

700 MHz to 3800 MHz high linearity variable gain amplifier

12. Package outline

Fig 37. Package outline SOT617-3 (HVQFN32)

References

Outline

version

European

projection Issue date

IEC JEDEC JEITA

SOT617-3 MO-220

sot617-3_po

11-06-14

11-06-21

Unit(1)

max

nom

min

0.85

0.05

0.00

0.2

5.1

4.9

3.75

3.45

5.1

4.9

3.75

3.45

0.5 3.5

Dimensions

Note

1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.

HVQFN32: plastic thermal enhanced very thin quad flat package; no leads;

32 terminals; body 5 x 5 x 0.85 mm SOT617-3

0.30

0.18

D(1)

A(1) DhE(1) Ehee

1e2L

3.5

0.1 0.1

0.05

0.5

0.3

0.05

0 2.5 5 mm

scale

1/2 e

AC B

terminal 1

index area

detail X

y1C

916

32 25

terminal 1

index area

1/2 e

Product data sheet Rev. 5 — 20 January 2017 27 of 30

NXP Semiconductors BGA7210

700 MHz to 3800 MHz high linearity variable gain amplifier

13. Packing information

The BGA7210 will be delivered in reel pack SMD 7”, 1500 pieces per reel.

14. Abbreviations

15. Revision history

Fig 38. Carrier tape

aaa-000870

Table 15. Abbreviations

Acronym Description

CDM Charged Device Model

ESD ElectroStatic Discharge

DSA Digital Step Attenuator

HBM Human Body Model

IF Intermediate Frequency

MMIC Monolithic Microwa v e Integrated Circuit

POR Power-On Reset

RF Radio Frequency

SPI Serial Peripheral Interface

USB Universal Serial Bus

WiMAX Worldwide Interoperability for Microwave Access

Table 16. Revision history

Document ID Release date Data sh ee t status Change notice Supersedes

BGA7210 v.5 20170120 Product data sheet - BGA7210 v.4

Modifications: •Section 1: added BTS6001A according to our new namin g convention

BGA7210 v.4 20130128 Product data sheet - BGA7210 v.3

Modifications: •Table 4: updated.

BGA7210 v.3 20121224 Product data sheet - BGA7210 v.2

BGA7210 v.2 20120104 Product data sheet - BGA7210 v.1

BGA7210 v.1 2011121 3 Preliminary data sheet - -

Product data sheet Rev. 5 — 20 January 2017 28 of 30

NXP Semiconductors BGA7210

700 MHz to 3800 MHz high linearity variable gain amplifier

16. Legal information

16.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product sta tus of device (s) described in this d ocument may have change d since this d ocument was p ublished and may dif fer in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

16.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warrant ies as to t he accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short dat a sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre va il.

Product specificat io n — The information and data provided in a Product

data sheet shall define the specification of the product as agr eed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

16.3 Disclaimers

Limited warr a nty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warrant ies, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information. NXP Se miconductors takes no

responsibility for the content in this document if provided by an information

source outside of NXP Semiconductors.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequ ential damages (including - wit hout limitation - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggregate and cumulat ive liability toward s

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in perso nal injury, death or severe property or environmental

damage. NXP Semiconductors and its suppliers accept no liability for

inclusion and/or use of NXP Semiconducto rs products in such equipment or

applications and ther efore such inclu sion and/or use is at the cu stomer’s own

risk.

Applications — Applications that are described herein for any of these

products are for il lustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applicati ons or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for t he customer’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Custo mers should provide appropriate

design and operating safeguards to minimize the risks associated with t heir

applications and products.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party custo mer(s). Customer is responsible for doing all necessary

testing for the customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter m s and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing i n this document may be interpreted or

construed as an of fer t o sell product s that is open for accept ance or the gr ant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 5 — 20 January 2017 29 of 30

NXP Semiconductors BGA7210

700 MHz to 3800 MHz high linearity variable gain amplifier

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified,

the product is not suitable for aut omotive use. It i s neither qua lified nor tested

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in au tomotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automot ive specifications and standards, custome r

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconduct ors for an y

liability, damages or failed product claims resulting fr om customer design and

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specifications.

Translations — A non-English (translated) version of a docume nt is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

16.4 Trademarks

Notice: All refe renced brands, produc t names, service names and trademarks

are the property of their respective ow ners.

17. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to : salesaddresses@nxp.com

NXP Semiconductors BGA7210

700 MHz to 3800 MHz high linearity variable gain amplifier

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 20 January 2017

Document identifier : BGA7210

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

18. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 2

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 3

2.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 4

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

5 Limiting values . . . . . . . . . . . . . . . . . . . . . . . . . . 4

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 5

7 Static characteristics. . . . . . . . . . . . . . . . . . . . . 5

8 Dynamic characteristics . . . . . . . . . . . . . . . . . . 6

9 Serial Peripheral Interface . . . . . . . . . . . . . . . . 8

9.1 Command word format. . . . . . . . . . . . . . . . . . . 8

9.2 Setting current and attenuation . . . . . . . . . . . . 8

9.3 SPI timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

10 Power-up and power save. . . . . . . . . . . . . . . . 10

11 Application information. . . . . . . . . . . . . . . . . . 11

11.1 Application board . . . . . . . . . . . . . . . . . . . . . . 11

11.2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 13

12 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 26

13 Packing information . . . . . . . . . . . . . . . . . . . . 27

14 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 27

15 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 27

16 Legal information. . . . . . . . . . . . . . . . . . . . . . . 28

16.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 28

16.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 28

16.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 28

16.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 29

17 Contact information. . . . . . . . . . . . . . . . . . . . . 29

18 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

Mouser Electronics

Authorized Distributor

Click to View Pricing, Inventory, Delivery & Lifecycle Information:

NXP:

OM7921/BGA7210,598