LT5571
1
5571f
RF OUTPUT POWER PER CARRIER (dBm)
–30
ACPR, AltCPR (dBc)
NOISE FLOOR AT 30MHz OFFSET (dBm/Hz)
–70
–60
–10
5571 TA01b
–80
–90 –25 –20 –15 0–5
–40
–50
–140
–130
–150
–160
–110
–120
DOWNLINK TEST
MODEL 64 DPCH
3-CH ACPR
1-CH
ACPR
3-CH AltCPR
1-CH AltCPR
3-CH NOISE
1-CH NOISE
TYPICAL APPLICATION
FEATURES
APPLICATIONS
DESCRIPTION
620MHz – 1100MHz High
Linearity Direct Quadrature
Modulator
The LT
®
5571 is a direct I/Q modulator designed for high
performance wireless applications, including wireless
infrastructure. It allows direct modulation of an RF signal
using differential baseband I and Q signals. It supports
RFID, GSM, EDGE, CDMA, CDMA2000, and other systems.
It may also be confi gured as an image reject upconvert-
ing mixer by applying 90° phase-shifted signals to the I
and Q inputs. The high impedance I/Q baseband inputs
consist of voltage-to-current converters that in turn drive
double-balanced mixers. The outputs of these mixers are
summed and applied to an on-chip RF transformer, which
converts the differential mixer signals to a 50Ω single-
ended output. The four balanced I and Q baseband input
ports are intended for DC-coupling from a source with a
common-mode voltage at about 0.5V. The LO path consists
of an LO buffer with single-ended input, and precision
quadrature generators that produce the LO drive for the
mixers. The supply voltage range is 4.5V to 5.25V.
Direct Conversion Transmitter Application
■ Direct Conversion from Baseband to RF
■ High Output: –4.2dB Conversion Gain
■ High OIP3: 21.7dBm at 900MHz
■ Low Output Noise Floor at 20MHz Offset:
No RF: –159dBm/Hz
P
OUT = 4dBm: –153.3dBm/Hz
■ Low Carrier Leakage: –42dBm at 900MHz
■ High Image Rejection: –53dBc at 900MHz
■ 3-Ch CDMA2000 ACPR: –70.4dBc at 900MHz
■ Integrated LO Buffer and LO Quadrature Phase
Generator
■ 50Ω AC-Coupled Single-Ended LO and RF Ports
■ High Impedance DC Interface to Baseband Inputs
with 0.5V Common Mode Voltage
■ 16-Lead QFN 4mm × 4mm Package
■ RFID Interrogators
■ GSM, CDMA, CDMA2000 Transmitters
■ Point-to-Point Wireless Infrastructure Tx
■ Image Reject Up-Converters for Cellular Bands
■ Low-Noise Variable Phase-Shifter for 620MHz to
1100MHz Local Oscillator Signals
, LT, LTC and LTM are registered trademarks of Linear Technology Corporation.
All other trademarks are the property of their respective owners.
CDMA2000 ACPR, AltCPR and Noise vs RF
Output Power at 900MHz for 1 and 3 Carriers
VCO/SYNTHESIZER
EN
I-CH
Q-CH BALUN
VCC
V-I
BASEBAND
GENERATOR
V-I
LT5571
5V
5571 TA01a
PA
RF = 620MHz
TO 1100MHz
I-DAC
Q-DAC
90°
0°
100nF
×2
LT5571
2
5571f
PACKAGE/ORDER INFORMATION
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
Supply Voltage .........................................................5.5V
Common-Mode Level of BBPI, BBMI and
BBPQ, BBMQ .......................................................0.6V
Operating Ambient Temperature
(Note 2) ............................................... –40°C to 85°C
Storage Temperature Range ................... –65°C to 125°C
Voltage on any Pin
Not to Exceed ...................... –500mV to VCC + 500mV
(Note 1)
16 15 14 13
5 6 7 8
TOP VIEW
17
UF PACKAGE
16-LEAD (4mm × 4mm) PLASTIC QFN
9
10
11
12
4
3
2
1EN
GND
LO
GND
GND
RF
GND
GND
BBMI
GND
BBPI
VCC
BBMQ
GND
BBPQ
VCC
TJMAX = 125°C, θJA = 37°C/W
EXPOSED PAD (PIN 17) IS GND, MUST BE SOLDERED TO PCB
ORDER PART NUMBER UF PART MARKING
LT5571EUF 5571
Order Options Tape and Reel: Add #TR
Lead Free: Add #PBF Lead Free Tape and Reel: Add #TRPBF
Lead Free Part Marking: http://www.linear.com/leadfree/
Consult LTC Marketing for parts specifi ed with wider operating temperature ranges.
V
CC = 5V, EN = High, TA = 25°C, fLO = 900MHz, fRF = 902MHz,
PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 0.5VDC, Baseband Input Frequency = 2MHz, I & Q 90° shifted (upper
sideband selection). PRF(OUT) = –10dBm, unless otherwise noted. (Note 3)
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
RF Output (RF)
fRF RF Frequency Range
RF Frequency Range
–3dB Bandwidth
–1dB Bandwidth
0.62 to 1.1
0.65 to 1.04
GHz
GHz
S22, ON RF Output Return Loss EN = High (Note 6) 12.7 dB
S22, OFF RF Output Return Loss EN = Low (Note 6) 11.6 dB
NFloor RF Output Noise Floor No Input Signal (Note 8)
POUT = 4dBm (Note 9)
POUT = 4dBm (Note 10)
–159
–153.3
–152.9
dBm/Hz
dBm/Hz
dBm/Hz
GVConversion Voltage Gain 20 • Log (VOUT, 50Ω/VIN, DIFF, I or Q) –4.2 dB
POUT Absolute Output Power 1VP-P DIFF CW Signal, I and Q –0.2 dBm
G3LO vs LO 3 • LO Conversion Gain Difference (Note 17) –25.5 dB
OP1dB Output 1dB Compression (Note 7) 8.1 dBm
OIP2 Output 2nd Order Intercept (Notes 13, 14) 63.8 dBm
OIP3 Output 3rd Order Intercept (Notes 13, 15) 21.7 dBm
IR Image Rejection (Note 16) –53 dBc
LOFT Carrier Leakage (LO Feedthrough) EN = High, PLO = 0dBm (Note 16)
EN = Low, PLO = 0dBm (Note 16)
–42
–61
dBm
dBm
Note: The baseband input pins should not be left fl oating.
LT5571
3
5571f
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: Specifi cations over the –40°C to 85°C temperature range are
assured by design, characterization and correlation with statistical process
controls.
Note 3: Tests are performed as shown in the confi guration of Figure 7.
Note 4: At each of the four baseband inputs BBPI, BBMI, BBPQ and BBMQ.
Note 5: V(BBPI) – V(BBMI) = 1VDC, V(BBPQ) – V(BBMQ) = 1VDC.
Note 6: Maximum value within –1dB bandwidth.
Note 7: An external coupling capacitor is used in the RF output line.
Note 8: At 20MHz offset from the LO signal frequency.
LO Input (LO)
fLO LO Frequency Range 0.5 to 1.2 GHz
PLO LO Input Power –10 0 5 dBm
S11, ON LO Input Return Loss EN = High (Note 6) –10.9 dB
S11, OFF LO Input Return Loss EN = Low (Note 6) –2.6 dB
NFLO LO Input Referred Noise Figure at 900MHz (Note 5) 14.3 dB
GLO LO to RF Small Signal Gain at 900MHz (Note 5) 18.5 dB
IIP3LO LO Input 3rd Order Intercept at 900MHz (Note 5) –4.8 dBm
Baseband Inputs (BBPI, BBMI, BBPQ, BBMQ)
BWBB Baseband Bandwidth –3dB Bandwidth 400 MHz
VCMBB DC Common-Mode Voltage Externally Applied (Note 4) 0.5 0.6 V
RIN Differential Input Resistance 90 kΩ
IDC, IN Baseband Static Input Current (Note 4) –24 µA
PLO-BB Carrier Feedthrough on BB No Baseband Signal (Note 4) –42 dBm
IP1dB Input 1dB Compression Point Differential Peak-to-Peak (Note 7) 2.9 VP-P,DIFF
ΔGI/Q I/Q Absolute Gain Imbalance 0.013 dB
ΔϕI/Q I/Q Absolute Phase Imbalance 0.24 Deg
Power Supply (VCC)
VCC Supply Voltage 4.5 5 5.25 V
ICC(ON) Supply Current EN = High 97 120 mA
ICC(OFF) Supply Current, Shutdown Mode EN = 0V 100 µA
tON Turn-On Time EN = Low to High (Note 11) 0.4 µs
tOFF Turn-Off Time EN = High to Low (Note 12) 1.4 µs
Enable (EN), Low = Off, High = On
Enable Input High Voltage
Input High Current
EN = High
EN = 5V
1
230
V
µA
Shutdown Input Low Voltage EN = Low 0.5 V
ELECTRICAL CHARACTERISTICS
V
CC = 5V, EN = High, TA = 25°C, fLO = 900MHz, fRF = 902MHz,
PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 0.5VDC, Baseband Input Frequency = 2MHz, I & Q 90° shifted (upper
sideband selection). PRF(OUT) = –10dBm, unless otherwise noted. (Note 3)
Note 9: At 20MHz offset from the CW signal frequency.
Note 10: At 5MHz offset from the CW signal frequency.
Note 11: RF power is within 10% of fi nal value.
Note 12: RF power is at least 30dB lower than in the ON state.
Note 13: Baseband is driven by 2MHz and 2.1MHz tones. Drive level is set
in such a way that the two resulting RF tones are –10dBm each.
Note 14: IM2 measured at LO frequency + 4.1MHz
Note 15: IM3 measured at LO frequency + 1.9MHz and LO frequency +
2.2MHz.
Note 16: Amplitude average of the characterization data set without image
or LO feed-through nulling (unadjusted).
Note 17: The difference in conversion gain between the spurious signal at
f = 3 • LO – BB versus the conversion gain at the desired signal at f = LO +
BB for BB = 2MHz and LO = 900MHz.
LT5571
4
5571f
2 • LO FREQUENCY (GHz)
1.1
2 • LO LEAKAGE (dBm)
–40
2.3 2.5
5571 G08
–45
–50
1.3 1.5 1.7 2.11.9
–55
–60
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
LO FREQUENCY (MHz)
550
LO FEEDTHROUGH (dBm)
–42
1150 1250
5571 G07
–44
650 750 850 1050950
–46
–48
–40
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
3 • LO FREQUENCY (GHz)
1.65
3 • LO LEAKAGE (dBm)
–50
–45
3.5 3.75
5571 G09
–55
–60
1.95 2.25 2.55 3.152.85
–65
–70
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
LO FREQUENCY (MHz)
550
OP1dB (dBm)
6
8
1150 1250
5571 G06
4
2
650 750 850 1050950
0
–2
10
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
LO FREQUENCY (MHz)
550
OIP3 (dBm)
20
22
24
1150 1250
5571 G04
18
16
650 750 850 1050950
14
12
26 fBB, 1 = 2MHz
fBB, 2 = 2.1MHz
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
LO FREQUENCY (MHz)
550
VOLTAGE GAIN (dB)
–8
–6
–4
1150 1250
5558 G03
–10
–12
650 750 850 1050950
–14
–16
–2
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
SUPPLY VOLTAGE (V)
4.50
80
90
SUPPLY CURRENT (mA)
100
110
85°C
25°C
–40°C
5.004.75
5571 G01
5.25
LO FREQUENCY (MHz)
550
RF OUTPUT POWER (dBm)
–4
–2
0
1150 1250
5571 G02
–6
–8
650 750 850 1050950
–10
–12
2
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
LO FREQUENCY (MHz)
550
OIP2 (dBm)
65
70
1150 1250
5571 G05
60
55
650 750 850 1050950
50
45
75 fIM2 = fBB, 1 + fBB, 2 + fLO
fBB, 1 = 2MHz
fBB, 2 = 2.1MHz
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
TYPICAL PERFORMANCE CHARACTERISTICS
Supply Current vs Supply Voltage
RF Output Power vs LO Frequency
at 1VP-P Differential Baseband
Drive Voltage Gain vs LO Frequency
Output IP3 vs LO Frequency Output IP2 vs LO Frequency
Output 1dB Compression vs
LO Frequency
LO Feedthrough to RF Output vs
LO Frequency
2 • LO Leakage to RF Output vs
2 • LO Frequency
3 • LO Leakage to RF Output vs
3 • LO Frequency
VCC = 5V, EN = High, TA = 25°C, fLO = 900MHz,
fRF = 902MHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 0.5VDC, Baseband Input Frequency fBB = 2MHz, I & Q 90°
shifted, without image or LO feedthrough nulling. fRF = fBB + fLO (upper sideband selection). PRF(OUT) = –10dBm (–10dBm/tone for 2-
tone measurements), unless otherwise noted. (Note 3)
LT5571
5
5571f
RF FREQUENCY (MHz)
550 1150 1250
5571 G10
650 750 850 1050950
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
–162
–160
–157
–161
–158
–159
NOISE FLOOR (dBm/Hz)
fLO = 900MHz (FIXED)
NO BASEBAND SIGNAL
LO FREQUENCY (MHz)
550
IMAGE REJECTION (dBc)
–35
–30
1150 1250
5571 G11
–40
–45
650 750 850 1050950
–50
–55
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
FREQUENCY (MHz)
–40
S11 (dB)
–30
0
5571 G12
–10
–20
550 1150 1250650 750 850 1050950
LO PORT, EN = LOW
RF PORT,
EN = HIGH,
NO LO
RF PORT,
EN = LOW
LO PORT, EN = HIGH, PLO = 0dBm
LO PORT,
EN = HIGH,
PLO = –10dBm
RF PORT,
EN = HIGH,
PLO = 0dBm
LO FREQUENCY (MHz)
550
ABSOLUTE I/Q GAIN IMBALANCE (dB)
0.3
0.2
1150 1250
5571 G13
0.1
650 750 850 1050950
0
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
LO FREQUENCY (MHz)
550
ABSOLUTE I/Q PHASE IMBALANCE (DEG)
3
1150 1250
5571 G14
2
1
650 750 850 1050950
0
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
LO INPUT POWER (dBm)
–20
VOLTAGE GAIN (dB)
–2
48
5571 G15
–6
–8
–10
–12
–14
–4
–16
–18
–16 –12 –8 0–4
–20
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
LO INPUT POWER (dBm)
–20
OIP3 (dBm)
24
48
5571 G16
20
18
16
14
12
22
10 –16 –12 –8 0–4
fBB, 1 = 2MHz
fBB, 2 = 2.1MHz
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
LO INPUT POWER (dBm)
–20
IMAGE REJECTION (dBc)
–35
48
5571 G18
–40
–45
–50
–60
–55
–16 –12 –8 0–4
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
TYPICAL PERFORMANCE CHARACTERISTICS
Noise Floor vs RF Frequency Image Rejection vs LO Frequency
LO and RF Port Return Loss vs
Frequency
Absolute I/Q Gain Imbalance vs
LO Frequency
Absolute I/Q Phase Imbalance vs
LO Frequency Voltage Gain vs LO Power
Output IP3 vs LO Power LO Feedthrough vs LO Power Image Rejection vs LO Power
VCC = 5V, EN = High, TA = 25°C, fLO = 900MHz,
fRF = 902MHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 0.5VDC, Baseband Input Frequency fBB = 2MHz, I & Q 90°
shifted, without image or LO feedthrough nulling. fRF = fBB + fLO (upper sideband selection). PRF(OUT) = –10dBm (–10dBm/tone for 2-
tone measurements), unless otherwise noted. (Note 3)
LO INPUT POWER (dBm)
–20
LO FEEDTHROUGH (dBm)
–38
–40
–42
48
5571 G17
–46
–48
–50
–44
–16 –12 –8 0–4
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
LT5571
6
5571f
GAIN (dB)
–6–6.5
25
20
15
10
5
0
5571 G25
–5.5 –5 –4.5 –4 –3.5 –3 –2.5 –2
PERCENTAGE (%)
–40°C
25°C
85°C
VBB = 400mVP-P
NOISE FLOOR (dBm/Hz)
–159.9
25
20
15
10
5
0
5571 G26
–159.6 –159.3 –159.0 –158.7
PERCENTAGE (%)
–40°C
25°C
85°C
LO LEAKAGE (dBm)
<–50
20
10
0
5571 G27
–36–38 –34–46–48 –44 –42 –40
PERCENTAGE (%)
–40°C
25°C
85°C
VBB = 400mVP-P
I AND Q BASEBAND VOLTAGE (VP-P,DIFF, EACH TONE)
0.1
–80
–70
PTONE (dBm), IM2, IM3 (dBc)
–50
–30
10
RF
IM3
IM2
110
5571 G23
–10
–60
–40
0
–20 IM2 = POWER AT
fLO + 4.1MHz
IM3 = MAX POWER
AT fLO + 1.9MHz
OR fLO + 2.2MHz
fBBI = 2MHz, 2.1MHz, 0°
fBBQ = 2MHz, 2.1MHz, 90°
25°C
85°C
–40°C
I AND Q BASEBAND VOLTAGE (VP-P, DIFF)
0
HD2, HD3 (dBc)
RF CW OUTPUT POWER (dBm)
0
–10
–20
45
5571 G19
–50
–60
–40
–70
–80
–30
20
10
0
–30
–40
–20
–50
–60
–10
123
HD3
RF
HD2
HD2 = MAX POWER AT
fLO + 2 • fBB OR fLO – 2 • fBB
HD3 = MAX POWER AT
fLO + 3 • fBB OR fLO – 3 • fBB
25°C
85°C
–40°C
I AND Q BASEBAND VOLTAGE (VP-P, DIFF)
0
HD2, HD3 (dBc)
RF CW OUTPUT POWER (dBm)
–10
–20
45
5571 G20
–50
–60
–40
–70
–80
–30
10
0
–30
–40
–20
–50
–60
–10
123
HD3
RF
HD2
HD2 = MAX POWER AT
fLO + 2 • fBB OR fLO – 2 • fBB
HD3 = MAX POWER AT
fLO + 3 • fBB OR fLO – 3 • fBB
5V
5.5V
4.5V
I AND Q BASEBAND VOLTAGE (VP-P, DIFF)
0
LO FEEDTHROUGH (dBm)
–30
45
5571 G21
–40
–45
–35
123
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
I AND Q BASEBAND VOLTAGE (VP-P,DIFF)
0
IMAGE REJECTION (dBc)
–48
4
5571 G22
–50
–52
–54
–56
–58 123 5
–46
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
I AND Q BASEBAND VOLTAGE (VP-P,DIFF, EACH TONE)
0.1
–80
–70
PTONE (dBm), IM2, IM3 (dBc)
–50
–30
10
RF
IM3
IM2
110
5571 G24
–10
–60
–40
0
–20 IM2 = POWER AT
fLO + 4.1MHz
IM3 = MAX POWER
AT fLO + 1.9MHz
OR fLO + 2.2MHz
fBBI = 2MHz, 2.1MHz, 0°
fBBQ = 2MHz, 2.1MHz, 90°
5V
5.5V
4.5V
TYPICAL PERFORMANCE CHARACTERISTICS
RF CW Output Power, HD2 and
HD3 vs CW Baseband Voltage and
Temperature
RF CW Output Power, HD2 and
HD3 vs CW Baseband Voltage and
Supply Voltage
LO Feedthrough to RF Output vs
CW Baseband Voltage
Image Rejection vs CW Baseband
Voltage
RF Two-Tone Power (Each Tone),
IM2 and IM3 vs Baseband Voltage
and Temperature
RF Two-Tone Power (Each Tone),
IM2 and IM3 vs Baseband Voltage
and Supply Voltage
Voltage Gain Distribution Noise Floor Distribution (no RF) LO Leakage Distribution
VCC = 5V, EN = High, TA = 25°C, fLO = 900MHz,
fRF = 902MHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 0.5VDC, Baseband Input Frequency fBB = 2MHz, I & Q 90°
shifted, without image or LO feedthrough nulling. fRF = fBB + fLO (upper sideband selection). PRF(OUT) = –10dBm (–10dBm/tone for 2-
tone measurements), unless otherwise noted. (Note 3)
LT5571
7
5571f
TEMPERATURE (°C)
–90
LO FEEDTHROUGH (dBm), IR (dB)
–70
–80
–40
5571 G29
–50
–60
–40 60 80–20 0 4020
LO FEEDTHROUGH
IMAGE REJECTION
CALIBRATED WITH PRF = 0dBm
fBBI = 2MHz, 0°
fBBQ = 2MHz, 90° + ϕCAL
IMAGE REJECTION (dBc)
25
20
15
10
5
0
5571 G28
PERCENTAGE (%)
–40°C
25°C
85°C
<–60 –56 –52 –36–48 –44 –40
VBB = 400mVP-P
TYPICAL PERFORMANCE CHARACTERISTICS
Image Rejection Distribution
LO Feedthrough and Image
Rejection vs Temperature After
Calibration at 25°C
VCC = 5V, EN = High, TA = 25°C, fLO = 900MHz,
fRF = 902MHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 0.5VDC, Baseband Input Frequency fBB = 2MHz, I & Q 90°
shifted, without image or LO feedthrough nulling. fRF = fBB + fLO (upper sideband selection). PRF(OUT) = –10dBm (–10dBm/tone for 2-
tone measurements), unless otherwise noted. (Note 3)
PIN FUNCTIONS
EN (Pin 1): Enable Input. When the Enable pin voltage is
higher than 1V, the IC is turned on. When the Enable volt-
age is less than 0.5V or if the pin is disconnected, the IC
is turned off. The voltage on the Enable pin should never
exceed VCC by more than 0.5V, in order to avoid possible
damage to the chip.
GND (Pins 2, 4, 6, 9, 10, 12, 15, 17): Ground. Pins 6, 9,
15 and the Exposed Pad 17 are connected to each other
internally. Pins 2 and 4 are connected to each other inter-
nally and function as the ground return for the LO signal.
Pins 10 and 12 are connected to each other internally and
function as the ground return for the on-chip RF balun. For
best RF performance, Pins 2, 4, 6, 9, 10, 12, 15 and the
Exposed Pad, Pin 17, should be connected to the printed
circuit board ground plane.
LO (Pin 3): LO Input. The LO input is an AC-coupled single-
ended input with approximately 50Ω input impedance at
RF frequencies. Externally applied DC voltage should be
within the range –0.5V to (VCC + 0.5V) in order to avoid
turning on ESD protection diodes.
BBPQ, BBMQ (Pins 7, 5): Baseband inputs for the Q-chan-
nel with about 90kΩ differential input impedance. These
pins should be externally biased at about 0.5V. Applied
common mode voltage must stay below 0.6V.
VCC (Pins 8, 13): Power Supply. Pins 8 and 13 are connected
to each other internally. 0.1µF capacitors are recommended
for decoupling to ground on each of these pins.
RF (Pin 11): RF Output. The RF output is an AC-coupled
single-ended output with approximately 50Ω output im-
pedance at RF frequencies. Externally applied DC voltage
should be within the range –0.5V to (VCC + 0.5V) in order
to avoid turning on ESD protection diodes.
BBPI, BBMI (Pins 14, 16): Baseband inputs for the I-chan-
nel with about 90kΩ differential input impedance. These
pins should be externally biased at about 0.5V. Applied
common mode voltage must stay below 0.6V.
Exposed Pad (Pin 17): Ground. The Exposed Pad must
be soldered to the PCB.
LT5571
8
5571f
BLOCK DIAGRAM
APPLICATIONS INFORMATION
The LT5571 consists of I and Q input differential voltage-
to-current converters, I and Q up-conversion mixers, an RF
signal combiner/balun, an LO quadrature phase generator
and LO buffers.
External I and Q baseband signals are applied to the dif-
ferential baseband input pins, BBPI, BBMI, and BBPQ,
BBMQ. These voltage signals are converted to currents and
translated to RF frequency by means of double-balanced
up-converting mixers. The mixer outputs are combined
in an RF output balun, which also transforms the output
impedance to 50Ω. The center frequency of the resulting
RF signal is equal to the LO signal frequency. The LO input
drives a phase shifter which splits the LO signal into in-
phase and quadrature LO signals. These LO signals are then
applied to on-chip buffers which drive the up-conversion
mixers. Both the LO input and RF output are single-ended,
50Ω-matched and AC-coupled.
Baseband Interface
The baseband inputs (BBPI, BBMI), (BBPQ, BBMQ) present
a differential input impedance of about 90kΩ. At each of
the four baseband inputs, a capacitor of 1.8pF to ground
and a PNP emitter follower is incorporated (see Figure 1),
which limits the baseband bandwidth to approximately
200MHz (–1dB point), if driven by a 50Ω source. The
circuit is optimized for a common mode voltage of 0.5V
which should be externally applied. The baseband input
pins should not be left fl oating because the internal PNP’s
base current will pull the common mode voltage higher
than the 0.6V limit. This condition may damage the part.
The PNP’s base current is about 24µA in normal opera-
tion. On the LT5571 demo board, external 50Ω resistors
to ground are added to each baseband input to prevent
this condition and to serve as a termination resistance for
the baseband connections.
It is recommended that the I/Q signals be DC-coupled to
the LT5571. An applied common mode voltage level at the
I and Q inputs of about 0.5V will maximize the LT5571’s
dynamic range. Some I/Q generators allow setting the
common mode voltage independently. For a 0.5V com-
mon mode voltage setting, the common-mode voltage of
those generators must be set to 0.5V to create the desired
0.5V bias, when an external 50Ω is present in the setup
(See Figure 2).
The part should be driven differentially; otherwise, the even-
order distortion products will degrade the overall linearity
severely. Typically, a DAC will be the signal source for the
LT5571. A reconstruction fi lter should be placed between
the DAC output and the LT5571’s baseband inputs.
In Figure 3 a typical baseband interface is shown, includ-
ing a fi fth-order low-pass ladder fi lter. For each baseband
pin, a 0 to 1V swing is developed corresponding to a DAC
output current of 0mA to 20mA. The maximum sinusoidal
single side-band RF output power is about +5.8dBm for
90°
0°
V-I
V-I
BALUN
VCC
RF
LO 5571 BD
11
EN
1
396
GND
42
5
7
16
14
8 13
BBPI
BBMI
BBPQ
BBMQ
1715
GND
1210
LT5571
9
5571f
APPLICATIONS INFORMATION
Figure 1. Simplifi ed Circuit Schematic of the LT5571 (Only I-Half is Drawn)
Figure 2. DC Voltage Levels for a Generator Programmed at 0.5VDC for a 50Ω Load Without and with the LT5571 as a Load
Figure 3. LT5571 Baseband Interface with 5th Order Filter and 0.5VCM DAC (Only I Channel is Shown)
RF
VCC = 5V
VCM = 0.5V
BBPI
BBMI
C
GND
LOMI
LT5571
LOPI
FROM
Q-CHANNEL
5571 F01
BALUN
1.8pF
1.8pF
5571 F02
+
–
50Ω
50Ω
1VDC
0.5VDC 0.5005VDC
GENERATOR
50Ω
1VDC 20µADC
LT5571
50Ω
EXTERNAL
LOAD
GENERATOR
+
–
MAX RF
+5.8dBm
VCC
5V
BBPI
R2A
100Ω
L2A
L2B
GND
0.5VDC
0.5VDC
C3
R2B
100Ω
BBMI
C
GND
LOMI
LT5571
LOPI
FROM
Q-CHANNEL
5571 F03
BALUN
1.8pF
1.8pF
R1A
100Ω
R1B
100Ω
L1A
L1B
C2
C1
DAC
0mA TO 20mA
20mA TO 0mA
LT5571
10
5571f
Table 1. Typical Performance Characteristics vs VCM for fLO = 900MHz, PLO = 0dBm
VCM (V) ICC (mA) GV (dB) OP1dB (dBm) OIP2 (dBm) OIP3 (dBm) NFloor (dBm/Hz) LOFT (dBm) IR (dBc)
0.1 55.3 –4.5 –1.5 53.4 9.2 –163.6 –53.6 37.0
0.2 65.3 –3.9 2.0 51.7 11.2 –161.8 –50.3 40.4
0.25 70.3 –3.7 3.4 51.9 13.3 –161.2 –49.0 43.5
0.3 75.7 –3.6 4.5 52.1 15.6 –160.5 –47.7 43.9
0.4 86.4 –3.5 6.3 53.1 18.7 –159.6 –45.3 45.1
0.5 97.1 –3.6 7.9 53.0 20.6 –158.7 –43.1 45.4
0.6 108.1 –3.7 8.4 53.7 22.1 –157.9 –41.2 45.6
APPLICATIONS INFORMATION
full 0V to 1V swing on each baseband input (2VP-P,DIFF).
This maximum RF output level is limited by the 0.5VPEAK
maximum baseband swing possible for a 0.5VDC com-
mon-mode voltage level (assuming no negative supply
bias voltage is available).
It is possible to bias the LT5571 to a common mode
voltage level other than 0.5V. Table 1 shows the typical
performance for different common mode voltages.
LO Section
The internal LO input amplifi er performs single-ended to
differential conversion of the LO input signal. Figure 4
shows the equivalent circuit schematic of the LO input.
The internal differential LO signal is split into in-phase and
quadrature (90° phase shifted) signals to drive LO buffer
sections. These buffers drive the double balanced I and
Q mixers. The phase relationship between the LO input
and the internal in-phase LO and quadrature LO signals
is fi xed, and is independent of start-up conditions. The
phase shifters are designed to deliver accurate quadrature
signals for an LO frequency near 900MHz. For frequen-
cies signifi cantly below 750MHz or above 1100MHz, the
quadrature accuracy will diminish, causing the image
rejection to degrade. The LO pin input impedance is about
50Ω, and the recommended LO input power window is
–2dBm to 2dBm. For PLO < –2dBm input power, the gain,
OIP2, OIP3, dynamic-range (in dBc/Hz) and image rejection
will degrade, especially at TA = 85°C.
Harmonics present on the LO signal can degrade the image
rejection, because they introduce a small excess phase shift
in the internal phase splitter. For the second (at 1.8GHz)
and third harmonics (at 2.7GHz) at –20dBc level, the in-
troduced signal at the image frequency is about –61dBc
or lower, corresponding to an excess phase shift much
less than 1 degree. For the second and third harmonics at
–10dBc, still the introduced signal at the image frequency
is about –51dBc. Higher harmonics than the third will have
less impact. The LO return loss typically will be better than
11dB over the 750MHz to 1GHz range. Table 2 shows the
LO port input impedance vs frequency.
Table 2. LO Port Input Impedance vs Frequency for EN = High
and PLO = 0dBm
FREQUENCY INPUT IMPEDANCE S11
(MHz) (Ω)Mag Angle
500 47.2 + j11.7 0.123 97
600 58.4 + j8.3 0.108 40
700 65.0 – j0.6 0.131 –2
800 66.1 – j12.2 0.173 –31
900 60.7 – j22.5 0.221 –53
1000 53.3 – j25.1 0.239 –69
1100 48.4 – j25.1 0.248 –79
1200 42.7 – j26.4 0.285 –89
The return loss S11 on the LO port can be improved at
lower frequencies by adding a shunt capacitor. The input
impedance of the LO port is different if the part is in
shut-down mode. The LO input impedance for EN = Low
is given in Table 3.
Figure 4. Equivalent Circuit Schematic of the LO Input
VCC
20pF
LO
INPUT
ZIN ≈ 60Ω
5571 F04
LT5571
11
5571f
APPLICATIONS INFORMATION
Table 3. LO Port Input Impedance vs Frequency for EN = Low
and PLO = 0dBm
FREQUENCY INPUT IMPEDANCE S11
(MHz) (Ω)Mag Angle
500 35.6 + j42.1 0.467 83
600 65.5 + j70.1 0.531 46
700 163 + j76.3 0.602 14
800 188 – j95.2 0.654 –13
900 72.9 – j114 0.692 –36
1000 34.3 – j83.5 0.715 –56
1100 21.6 – j63.3 0.726 –73
1200 16.4 – j50.5 0.727 –86
RF Section
After up-conversion, the RF outputs of the I and Q mixers are
combined. An on-chip balun performs internal differential
to single-ended output conversion, while transforming the
output signal impedance to 50Ω. Table 4 shows the RF
port output impedance vs frequency.
Table 4. RF Port Output Impedance vs Frequency for EN = High
and PLO = 0dBm
FREQUENCY OUTPUT IMPEDANCE S22
(MHz) (Ω)Mag Angle
500 22.2 + j5.2 0.390 165
600 28.4 + j11.7 0.311 143
700 38.8 + j14.3 0.202 119
800 49.4 + j6.8 0.068 91
900 49.4 – j5.8 0.058 –92
1000 42.7 – j11.7 0.149 –115
1100 36.9 – j12.6 0.207 –128
1200 33.2 – j11.3 0.241 –138
The RF output S22 with no LO power applied is given in
Table 5.
Table 5. RF Port Output Impedance vs Frequency for EN = High
and No LO Power Applied
FREQUENCY OUTPUT IMPEDANCE S22
(MHz) (Ω)Mag Angle
500 22.9 + j5.3 0.377 165
600 30.0 + j11.2 0.283 143
700 40.6 + j11.2 0.160 123
800 47.3 + j1.9 0.034 145
900 44.2 – j7.4 0.099 –123
1000 38.4 – j10.4 0.175 –131
1100 34.2 – j10.2 0.221 –140
1200 31.7 – j8.7 0.246 –148
For EN = Low the S22 is given in Table 6.
Table 6. RF Port Output Impedance vs Frequency for EN = Low
FREQUENCY OUTPUT IMPEDANCE S22
(MHz) (Ω)Mag Angle
500 21.5 + j5.0 0.403 166
600 26.9 + j11.8 0.333 144
700 36.5 + j16.0 0.239 120
800 48.8 + j11.2 0.113 89
900 52.8 – j2.2 0.035 –38
1000 46.6 – j11.5 0.123 –99
1100 39.7 – j13.9 0.191 –117
1200 35.0 – j13.0 0.232 –130
To improve S22 for lower frequencies, a series capacitor
can be added to the RF output. At higher frequencies, a
shunt inductor can improve the S22. Figure 5 shows the
equivalent circuit schematic of the RF output.
Note that an ESD diode is connected internally from the
RF output to ground. For strong output RF signal levels
(higher than 3dBm) this ESD diode can degrade the lin-
earity performance if an external 50Ω termination imped-
ance is connected directly to ground. To prevent this, a
coupling capacitor can be inserted in the RF output line.
This is strongly recommended during 1dB compression
measurements.
21pF
VCC
1pF47Ω
RF
OUTPUT
7nH
5571 F05
Figure 5. Equivalent Circuit Schematic of the RF Output
Enable Interface
Figure 6 shows a simplifi ed schematic of the EN pin inter-
face. The voltage necessary to turn on the LT5571 is 1V.
To disable (shut down) the chip, the enable voltage must
be below 0.5V. If the EN pin is not connected, the chip is
disabled. This EN = Low condition is guaranteed by the
75kΩ on-chip pull-down resistor.
It is important that the voltage at the EN pin does not
exceed VCC by more than 0.5V. If this should occur, the
LT5571
12
5571f
APPLICATIONS INFORMATION
full chip supply current could be sourced through the EN
pin ESD protection diodes, which are not designed for this
purpose. Damage to the chip may result.
Evaluation Board
Figure 7 shows the evaluation board schematic. A good
ground connection is required for the LT5571’s Exposed
Pad. If this is not done properly, the RF performance will
degrade. Additionally, the Exposed Pad provides heat sink-
ing for the part and minimizes the possibility of the chip
EN
VCC
75k
5571 F06
25k
Figure 6. EN Pin Interface
BBIPBBIM
J1
16 15
R5
49.9Ω
R1
100Ω
VCC EN
LO IN
R2
49.9Ω
14 13
VCC
9
10
11
12
4
3
2
1
5678
5571 F07
17
R3
49.9Ω
C2
100nF
C1
100nF
RF
OUT
BBQM
BBQP
BOARD NUMBER: DC944A
J6
J3
J4
J5
R4
49.9Ω
J2
BBMI
LT5571
BBPI VCC
BBMQ GND
GND
BBPQ VCC
GND
GND
RF
GND
GND
LO
GND
EN
GND
Figure 7. Evaluation Circuit Schematic
Figure 8. Component Side of Evaluation Board
Figure 9. Bottom Side of Evaluation Board
overheating. R1 (optional) limits the EN pin current in the
event that the EN pin is pulled high while the VCC inputs
are low. The application board PCB layouts are shown in
Figures 8 and 9.
LT5571
13
5571f
RF OUTPUT POWER PER CARRIER (dBm)
–30
ACPR, AltCPR (dBc)
NOISE FLOOR AT 30MHz OFFSET (dBm/Hz)
–70
–60
–10
5571 F11
–80
–90 –25 –20 –15 0–5
–40
–50
–140
–130
–150
–160
–110
–120
DOWNLINK TEST
MODEL 64 DPCH
3-CH ACPR
1-CH
ACPR
3-CH AltCPR
1-CH AltCPR
3-CH NOISE
1-CH NOISE
I AND Q BASEBAND VOLTAGE (VP-P,DIFF)
0
–90
–80
–70
PRF, LOFT (dBm), IR (dBc)
–50
–30
20
10
IR
15432
5571 F14
–10
–60
–40
0
–20
fBBI = 2MHz, 0°
VCC = 5V, fBBQ = 2MHz, 90°
EN = HIGH, fRF = fBB + fLO
fLO = 900MHz, PLO = 0dBm
25°C
85°C
–40°CLO FT
PRF
APPLICATIONS INFORMATION
Application Measurements
The LT5571 is recommended for base-station applications
using various modulation formats. Figure 10 shows a
typical application.
Figure 11 shows the ACPR performance for CDMA2000
using one and three channel modulation. Figures 12 and 13
illustrate the 1- and 3-channel CDMA2000 measurement.
To calculate ACPR, a correction is made for the spectrum
analyzer’s noise fl oor (Application Note 99).
If the output power is high, the ACPR will be limited by the
linearity performance of the part. If the output power is
low, the ACPR will be limited by the noise performance of
the part. In the middle, an optimum ACPR is obtained.
Because of the LT5571’s very high dynamic-range, the test
equipment can limit the accuracy of the ACPR measure-
ment. Consult Design Note 375 or the factory for advice
on ACPR measurement if needed.
VCO/SYNTHESIZER
EN
2, 4, 6, 9, 10, 12, 15, 17
I-CH
Q-CH BALUN
VCC
V-I
BASEBAND
GENERATOR
V-I
LT5571
5V
14
16
1
7
5
8, 13
5571 F10
11 PA
RF = 620MHz
TO 1100MvHz
3
I-DAC
Q-DAC
90°
0°
100nF
×2
Figure 10. 620MHz to 1.1GHz Direct Conversion Transmitter Application Figure 11. CDMA2000 ACPR, ALTCPR and Noise vs
RF Output Power at 900MHz for 1 and 3 Carriers
Figure 12. 1-Channel CDMA2000 Spectrum Figure 13. 3-Channel CDMA2000 Spectrum
896.25 899.25 902.25 903.75
5571 F12
897.75 900.75
CORRECTED
SPECTRUM
DOWNLINK TEST
MODEL 64 DPCH
SPECTRUM ANALYSER NOISE FLOOR
RF FREQUENCY (MHz)
–130
–120
POWER IN 30kHz BW (dBm)
–110
–90
–80
–70
–30
–100
–60
–50
–40
UNCORRECTED
SPECTRUM
RF FREQUENCY (MHz)
894
–130
–120
POWER IN 30kHz BW (dBm)
–110
–90
–80
–70
902
–30
5571 F13
–100
898896 904900 906
–60
–50
–40
UN-
CORRECTED
SPECTRUM
DOWNLINK
TEST MODEL
64 DPCH
CORRECTED SPECTRUM
SPECTRUM
ANALYSER
NOISE
FLOOR
The ACPR performance is sensitive to the amplitude
mismatch of the BBIP and BBIM (or BBQP and BBQM)
input voltage. This is because a difference in AC voltage
amplitude will give rise to a difference in amplitude between
the even-order harmonic products generated in the internal
V-I converter. As a result, they will not cancel out entirely.
Therefore, it is important to keep the amplitudes at the BBIP
and BBIM (or BBQP and BBQM) as equal as possible.
LO feedthrough and image rejection performance may
be improved by means of a calibration procedure. LO
feedthrough is minimized by adjusting the differential DC
offsets at the I and the Q baseband inputs. Image rejection
can be improved by adjusting the amplitude and phase
difference between the I and the Q baseband inputs. The
LO feedthrough and Image Rejection can also change
as a function of the baseband drive level, as depicted in
Figure 14.
Figure 14. Image Rejection and LO Feed-
Through vs Baseband Drive Voltage After
Calibration at 25°C
LT5571
14
5571f
865.4 865.8 866.2 866.4
5571 F16a
865.6 866.0
CH BANDWIDTH: 100kHz
CH SPACING: 100kHz
CH PWR: –4.85dBm
ACP UP: –33.74dBc
ACP LOW: –37.76dBc
ALT1 UP: –71.15dBc
ALT1 LOW: –64.52dBc
ALT2 UP: –72.80dBc
ALT2 LOW: –72.42dBc
FREQUENCY (MHz)
–100
–20
POWER IN 3kHz BW (dBm), MASK (dBch)
–10
–90
–80
–70
0
–30
–60
–50
–40
APPLICATIONS INFORMATION
Example: RFID Application
Figure 15 shows the interface between a current drive DAC
and the LT5571 for RFID applications. The SSB-ASK mode
requires an I/Q modulator to generate the desired spectrum.
According to [1], the LT5571 is capable of meeting the
“Dense-Interrogator” requirements with reduced supply
current. A VCM = 0.25V was chosen in order to save 30mA
current, resulting in a modulator supply current of about
73mA. This is achieved by sourcing 5mADC average DAC
current into 50Ω resistors R1A and R1B. As anti-aliasing
fi lter, an RCRC fi lter was chosen using R1A, R1B, C1A, C1B,
R2A, R2B, C2A and C2B. This results in a second-order
passive low-pass fi lter with –3dB cutoff at 790kHz. This
fi lter cutoff is chosen high enough that it will not affect
the RFID baseband signals in the fastest mode (TARI =
6.25µs, see [1]) signifi cantly, and at the same time achiev-
ing enough alias attenuation while using a 32MHz sampling
frequency. The resulting Alt80-CPR (the alias frequency at
897.875MHz falls outside the RF frequency range of Figure
16a) is –92dBc for TARI = 6.25µs. The SSB-ASK output
signal spectrum is plotted in Figure 16a, together with the
Dense-Interrogator Transmit mask [1] for TARI = 25µs. The
corresponding envelope representation is given in Figure
16b. The Alt1-CPR can be increased by using a higher VCM
at the cost of extra supply current or a lower baseband drive
at the cost of lower RF output power. The center frequency
of the channel is chosen at 865.9MHz (“channel 2”), while
the LO frequency is chosen at 865.875MHz.
RF
VCC
5V
BBPI
GND
0.25VDC
0.25VDC
0.25VDC
0.25VDC BBMI
C
GND
LOMI
LT5571
LOPI
FROM
Q-CHANNEL
5571 F15
BALUN
1.8pF
1.8pF
R1A
50Ω
R2A
250Ω
R1B
50Ω
C2A
470pF
C1A
2.2nF
C2B
470pF
C1B
2.2nF
DAC
0mA TO 10mA
10mA TO 0mA R2B
250Ω
Figure 15. Recommended Baseband Interface for RFID Applications (Only I Channel is Drawn)
Figure 16a and 16b. RFID SSB-ASK Spectrum with Mask and Corresponding RF Envelope for TARI = 25µs
0 100 200 250
5571 F16b
50 150
TIME (µs)
–0.3
RF OUTPUT VOLTAGE (V)
–0.2
–0.1
0.3
0
0.1
0.2
[1] EPC Radio Frequency Identity Protocols, Class-1 Generation-2 UHF RFID Protocol for
Communications at 860MHz – 960MHz, version 1.0.9.
LT5571
15
5571f
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representa-
tion that the interconnection of its circuits as described herein will not infringe on existing patent rights.
PACKAGE DESCRIPTION
4.00 ± 0.10
(4 SIDES)
NOTE:
1. DRAWING CONFORMS TO JEDEC PACKAGE OUTLINE MO-220 VARIATION (WGGC)
2. DRAWING NOT TO SCALE
3. ALL DIMENSIONS ARE IN MILLIMETERS
4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE
5. EXPOSED PAD SHALL BE SOLDER PLATED
6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION
ON THE TOP AND BOTTOM OF PACKAGE
PIN 1
TOP MARK
(NOTE 6)
0.55 ± 0.20
1615
1
2
BOTTOM VIEW—EXPOSED PAD
2.15 ± 0.10
(4-SIDES)
0.75 ± 0.05 R = 0.115
TYP
0.30 ± 0.05
0.65 BSC
0.200 REF
0.00 – 0.05
(UF16) QFN 10-04
RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS
0.72 ±0.05
0.30 ±0.05
0.65 BSC
2.15 ± 0.05
(4 SIDES)
2.90 ± 0.05
4.35 ± 0.05
PACKAGE OUTLINE
PIN 1 NOTCH R = 0.20 TYP
OR 0.35 × 45° CHAMFER
UF Package
16-Lead Plastic QFN (4mm × 4mm)
(Reference LTC DWG # 05-08-1692)
LT5571
16
5571f
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 ● FAX: (408) 434-0507 ● www.linear.com
© LINEAR TECHNOLOGY CORPORATION 2006
LT 1206 • PRINTED IN USA
PART NUMBER DESCRIPTION COMMENTS
Infrastructure
LT5514 Ultralow Distortion, IF Amplifi er/ADC Driver
with Digitally Controlled Gain
850MHz Bandwidth, 47dBm OIP3 at 100MHz, 10.5dB to 33dB Gain Control Range
LT5515 1.5GHz to 2.5GHz Direct Conversion Quadrature
Demodulator
20dBm IIP3, Integrated LO Quadrature Generator
LT5516 0.8GHz to 1.5GHz Direct Conversion Quadrature
Demodulator
21.5dBm IIP3, Integrated LO Quadrature Generator
LT5517 40MHz to 900MHz Quadrature Demodulator 21dBm IIP3, Integrated LO Quadrature Generator
LT5518 1.5GHz to 2.4GHz High Linearity Direct
Quadrature Modulator
22.8dBm OIP3 at 2GHz, –158.2dBm/Hz Noise Floor, 50Ω Single-Ended RF and LO
Ports, 4-Channel W-CDMA ACPR = –64dBc at 2.14GHz
LT5519 0.7GHz to 1.4GHz High Linearity Upconverting
Mixer
17.1dBm IIP3 at 1GHz, Integrated RF Output Transformer with 50Ω Matching,
Single-Ended LO and RF Ports Operation
LT5520 1.3GHz to 2.3GHz High Linearity Upconverting
Mixer
15.9dBm IIP3 at 1.9GHz, Integrated RF Output Transformer with 50Ω Matching,
Single-Ended LO and RF Ports Operation
LT5521 10MHz to 3700MHz High Linearity
Upconverting Mixer
24.2dBm IIP3 at 1.95GHz, NF = 12.5dB, 3.15V to 5.25V Supply, Single-Ended LO
Port Operation
LT5522 600MHz to 2.7GHz High Signal Level
Downconverting Mixer
4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB, 50Ω Single-Ended RF
and LO Ports
LT5524 Low Power, Low Distortion ADC Driver with
Digitally Programmable Gain
450MHz Bandwidth, 40dBm OIP3, 4.5dB to 27dB Gain Control
LT5525 High Linearity, Low Power Downconverting
Mixer
Single-Ended 50Ω RF and LO Ports, 17.6dBm IIP3 at 1900MHz, ICC = 28mA
LT5526 High Linearity, Low Power Downconverting
Mixer
3V to 5.3V Supply, 16.5dBm IIP3, 100kHz to 2GHz RF, NF = 11dB, ICC = 28mA,
–65dBm LO-RF Leakage
LT5527 400MHz to 3.7GHz High Signal Level
Downconverting Mixer
IIP3 = 23.5dBm and NF = 12.5dBm at 1900MHz, 4.5V to 5.25V Supply, ICC = 78mA,
Conversion Gain = 2dB.
LT5528 1.5GHz to 2.4GHz High Linearity Direct
Quadrature Modulator
21.8dBm OIP3 at 2GHz, –159.3dBm/Hz Noise Floor, 50Ω, 0.5VDC Baseband
Interface, 4-Channel W-CDMA ACPR = –66dBc at 2.14GHz
LT5558 600MHz to 1100MHz High Linearity Direct
Quadrature Modulator
22.4dBm OIP3 at 900MHz, –158dBm/Hz Noise Floor, 3kΩ, 2.1VDC Baseband
Interface, 3-Ch CDMA2000 ACPR = –70.4dBc at 900MHz
LT5560 Ultra-Low Power Active Mixer 10mA Supply Current, 10dBm IIP3, 10dB NF, Usable as Up- or Down-Converter.
LT5568 700MHz to 1050MHz High Linearity Direct
Quadrature Modulator
22.9dBm OIP3 at 850MHz, –160.3dBm/Hz Noise Floor, 50Ω, 0.5VDC Baseband
Interface, 3-Ch CDMA2000 ACPR = –71.4dBc at 850MHz
LT5572 1.5GHz to 2.5GHz High Linearity Direct
Quadrature Modulator
21.6dBm OIP3 at 2GHz, –158.6dBm/Hz Noise Floor, High-Ohmic 0.5VDC Baseband
Interface, 4-Ch W-CDMA ACPR = –67.7dBc at 2.14GHz
RF Power Detectors
LTC
®
5505 RF Power Detectors with >40dB Dynamic Range 300MHz to 3GHz, Temperature Compensated, 2.7V to 6V Supply
LTC5507 100kHz to 1000MHz RF Power Detector 100kHz to 1GHz, Temperature Compensated, 2.7V to 6V Supply
LTC5508 300MHz to 7GHz RF Power Detector 44dB Dynamic Range, Temperature Compensated, SC70 Package
LTC5509 300MHz to 3GHz RF Power Detector 36dB Dynamic Range, Low Power Consumption, SC70 Package
LTC5530 300MHz to 7GHz Precision RF Power Detector Precision VOUT Offset Control, Shutdown, Adjustable Gain
LTC5531 300MHz to 7GHz Precision RF Power Detector Precision VOUT Offset Control, Shutdown, Adjustable Offset
LTC5532 300MHz to 7GHz Precision RF Power Detector Precision VOUT Offset Control, Adjustable Gain and Offset
LT5534 50MHz to 3GHz Log RF Power Detector with
60dB Dynamic Range
±1dB Output Variation over Temperature, 38ns Response Time, Log Linear
Response
LTC5536 Precision 600MHz to 7GHz RF Power Detector
with Fast Comparator Output
25ns Response Time, Comparator Reference Input, Latch Enable Input,
–26dBm to +12dBm Input Range
LT5537 Wide Dynamic Range Log RF/IF Detector Low Frequency to 1GHz, 83dB Log Linear Dynamic Range
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