SFH 4257
IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung
High Power Infrared Emitter (850 nm)
Lead (Pb) Free Product - RoHS Compliant
2009-05-14 1
Wesentliche Merkmale
• Infrarot LED mit hoher Ausgangsleistung
• Schwarz eingefärbtes TOPLED-Gehäuse
• Verbesserte Abbildungseigenschaften durch
Absorption der Seitenstrahlung
• Kurze Schaltzeiten
Anwendungen
• Miniaturlichtschranken und Lichtschranken
über große Entfernungen (bei Verwendung
einer externen Optik)
Sicherheitshinweise
Je nach Betriebsart emittieren diese Bauteile
hochkonzentrierte, nicht sichtbare Infrarot-
Strahlung, die gefährlich für das menschliche
Auge sein kann. Produkte, die diese Bauteile
enthalten, müssen gemäß den Sicherheits-
richtlinien der IEC-Normen 60825-1 und 62471
behandelt werden.
Typ
Type Bestellnummer
Ordering Code Strahlstärkegruppierung1) (IF = 100 mA, tp = 20 ms)
Radiant Intensity Grouping1)
Ie (mW/sr)
SFH 4257 Q65110A2466 > 6.3 (typ. 7)
1) gemessen bei einem Raumwinkel Ω = 0.01 sr / measured at a solid angle of Ω = 0.01 sr
Features
• High Power Infrared LED
• Black coloured TOPLED-package
• Improved imaging characteristics due to
absorption of side emission
• Short switching ti mes
Applications
• Miniature and long distance photointerrupters
(in combination with external optics)
Safety Advices
Depending on the mode of operation, these
devices emit highly concentrated non visible
infrared light which can be hazardous to the
human eye. Products which incorporate these
devices have to follow the safety precautions
given in IEC 60825-1 and IEC 62471.
2009-05-14 2
SFH 4257
Grenzwerte (TA = 25 °C)
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top , Tstg – 40 … + 100 °C
Sperrspannung
Reverse voltage VR5 V
Vorwärtsgleichstrom
Forward current IF100 mA
Stoßstrom, tp = 200 μs, D = 0
Surge current IFSM 1 A
Verlustleistung
Power dissipation Ptot 180 mW
Wärmewiderstand Sperrschicht - Umgebung bei
Montage auf FR4 Platine, Padgröße je 16 mm2
Thermal resistance junction - ambient mounted
on PC-board (FR4), padsize 16 mm2 each
Wärmewiderstand Sperrschicht - Lötstelle bei
Montage auf Metall-Block
Thermal resistance junction - soldering point,
mounted on metal block
RthJA
RthJS
450
200
K/W
K/W
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Wellenlänge der Strahlung
Wavelength at peak emission
IF = 100 mA
λpeak 860 nm
Centroid-Wellenlänge der Strahlung
Centroid wavelength
IF = 100 mA
λcentroid 850 nm
Spektrale Bandbreite bei 50% von Imax
Spectral bandwidth at 50% of Imax
IF = 100 mA
Δλ 42 nm
Abstrahlwinkel
Half angle ϕ± 60 Grad
deg.
Aktive Chipfläche
Active chip area A0.09 mm2
SFH 4257
2009-05-14 3
Abmessungen der aktiven Chipfläche
Dimension of the active chip area L × B
L × W0.3 × 0.3 mm²
Schaltzeiten, Ie von 10% auf 90% und von 90%
auf 10%, bei IF = 100 mA, RL = 50 Ω
Switching times, Ιe from 10% to 90% and from
90% to 10%, IF = 100 mA, RL = 50 Ω
tr, tf12 ns
Durchlassspannung
Forward voltage
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
VF
VF
1.5 (< 1.8)
2.4 (< 3.0)
V
V
Sperrstrom
Reverse current
IRnot designed for
reverse
operation
μA
Gesamtstrahlungsfluss
Total radiant flux
IF = 100 mA, tp = 20 ms
Φe typ 18 mW
Temperaturkoeffizient von Ie bzw. Φe,
IF = 100 mA
Temperature coefficient of Ie or Φe, IF = 100 mA
TCI– 0.5 %/K
Temperaturkoeffizient von VF, IF = 100 mA
Temperature coefficient of VF, IF = 100 mA TCV– 0.7 mV/K
Temperaturkoeffizient von λ, IF = 100 mA
Temperature coefficient of λ, IF = 100 mA TCλ+ 0.3 nm/K
Kennwerte (TA = 25 °C)
Characteristics (cont’d)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
2009-05-14 4
SFH 4257
Abstrahlcharakteristik
Radiation Characteristics Irel = f (ϕ)
Strahlstärke Ie in Achsrichtung1)
gemessen bei einem Raumwinkel Ω = 0.01 sr
Radiant Intensity Ie in Axial Direction
at a solid angle of Ω = 0.01 sr
Bezeichnung
Parameter Symbol Werte
Values Einheit
Unit
SFH 4257-Q
Strahlstärke
Radiant intensity
IF = 100 mA, tp = 20 ms
Ie min
Ie max
6.3
12.5 mW/sr
mW/sr
Strahlstärke
Radiant intensity
IF = 1 A, tp = 100 μs
Ie typ 60 mW/sr
1) Nur eine Gruppe in einer Verpackungseinheit (Streu ung kleiner 2:1) /
Only one group in one packing unit (variation lower 2:1)
0
0.2
0.4
1.0
0.8
0.6
ϕ
1.0 0.8 0.6 0.4
0˚10˚20˚40˚ 30˚
OHL01660
50˚
60˚
70˚
80˚
90˚
100˚ 0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚
SFH 4257
2009-05-14 5
Relative Spectral Emission
Irel = f (λ)
Forward Current IF = f (VF)
Single pulse, tp = 20 μs
700
0nm
%
OHF04135
20
40
60
80
100
950750 800 850
I
rel
λ
OHL01713
F
I
10-4 0.5 1 1.5 2 2.5 V3
100
A
0
F
V
-1
10
5
5
10-2
-3
5
10
Radiant Intensity
Single pulse, tp = 20 μs
Permissible Pulse Handling
Capability IF = f (τ), TA = 25 °C,
duty cycle D = parameter
Ie
Ie 100 mA = f (IF)
OHL01715
10
-3
mA
10
1
0
10
5
5
10
-1
-2
5
10
e
e (100 mA)
I
I
I
F
0
10
1
10
2
10
3
1055
0.05
210-1-2-3-4-5
1010 1010 10
t
p
10 10s10
0
0.1
0.005
0.033
0.01
D
=
T
t
A
I
F
D
=
I
P
T
F
P
t
OHF02506
0.2
0.5
1
0.2
0.4
0.6
0.8
1.0
1.2
0.02
Max. Permissible Forward Current
IF = f (TA), RthJA = 450 K/W
OHR00883
0
F
Ι
0
20
40
60
80
100
120
20 40 60 80 100 120
mA
˚C
T
A
R
thjA
= 450 K/W
2009-05-14 6
SFH 4257
Maßzeichnung
Package Outlines
Maße in mm (inch) / Dimensions in mm (inch).
Gehäuse / Package schwarz, klarer Verguss / bl ack, resin clear colourless
Brechungsindex Verguss: 1.53 / refractive index resin: 1.53
Anschlussbelegung
Pin configuration siehe Zeichnung
see drawing
GPLY6059
(typ) 0.7 (0.028)
0.9 (0.035)
1.7 (0.067)
2.1 (0.083)
0.12 (0.005)
0.18 (0.007)
0.5 (0.020)
1.1 (0.043)
3.3 (0.130)
3.7 (0.146)
0.4 (0.016)
0.6 (0.024)
2.6 (0.102)
3.0 (0.118)
2.1 (0.083)
2.3 (0.091)
Anode marking
3.0 (0.118)
3.4 (0.134)
(2.4 (0.094))
0.1 (0.004)
4˚±1
SFH 4257
2009-05-14 7
Empfohlenes Lötpaddesign
Recommended Solder Pad Design
Maße in mm (inch) / Dimensions in mm (inch).
OHLPY970
4.5 (0.177)
2.6 (0.102)
1.5 (0.059)
Cu-area > 16 mm
Cu-Fläche > 16 mm
22
Solder resist
Lötstopplack
4.5 (0.177)
1.5 (0.059)
2.6 (0.102)
Padgeometrie für
improved heat dissipation
verbesserte Wärmeableitung
Paddesign for
2009-05-14 8
SFH 4257
Lötbedingungen Vorbehandlung nach JEDEC Level 2
Soldering Conditions Preconditioning acc. to JEDEC Level 2
Reflow Lötprofil für bleifreies Löten (nach J-STD-020C)
Reflow Soldering Profile for lead free soldering (acc. to J-STD-020C)
Wellenlöten (TTW) (nach CECC 00802)
TTW Soldering (acc. to CECC 00802)
OHLA0687
0
0
T
t
˚C
s
120 s max
50
100
150
200
250
300
Ramp Up
100 s max
50 100 150 200 250 300
Ramp Down
6 K/s (max)
3 K/s (max)
25 ˚C
30 s max
260 ˚C +0 ˚C
-5 ˚C
245 ˚C ±5 ˚C
240 ˚C
255 ˚C
217 ˚C
Maximum Solder Profile
Recommended Solder Profile
235 ˚C -0 ˚C
+5 ˚C
Minimum Solder Profile
10 s min
OHLY0598
0
050 100 150 200 250
50
100
150
200
250
300
T
t
C
s
235 C
10 s
C... 260
1. Welle
1. wave
2. Welle
2. wave
5 K/s 2 K/s
ca 200 K/s
CC... 130100
2 K/s Zwangskühlung
forced cooling
Normalkurve
standard curve
Grenzkurven
limit curves
SFH 4257
2009-05-14 9
Published by
OSRAM Opto Semiconductors GmbH
Leibnizstraße 4, D-93055 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be considered as as sured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be use d in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critical componen t is a component usedin a life-support device or syste m whose failure can reasonably be expected
to cause the failure of that life-support devic e or system, or to a ffect its safety or e ffectiveness of that device or system.
2 Life support devices or syste ms are intended (a) to be implanted in the human body, o r (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered .
