1Characteristics
Table 1. Absolute maximum ratings (Tj = 25 °C unless otherwise stated)
Symbol Parameter Value Unit
IT(RMS) RMS on-state current (full sine wave)
IPAK, DPAK,TO-220AB, D²PAK Tc = 110 °C
8 A
TO-220AB Ins. Tc = 100 °C
ITSM
Non repetitive surge peak on-state current (full
cycle, Tj initial = 25 °C)
f = 50 Hz t = 20 ms 80
A
f = 60 Hz tp = 16.7 ms 84
I2t I2t value for fusing tp = 10 ms 36 A2s
dl/dt Critical rate of rise of on-state current IG = 2 x
IGT, tr ≤ 100 ns f = 120 Hz Tj = 125 °C 50 A/µs
IGM Peak gate current tp = 20 µs Tj = 125 °C 4 A
PG(AV) Average gate power dissipation Tj = 125 °C 1 W
Tstg Storage junction temperature range -40 to +150 °C
TjOperating junction temperature range -40 to +125 °C
Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified) Snubberless and logic level (3
quadrants)
Symbol Parameter Quadrant
T8 BTA08/BTB08
Unit
10 35 50 TW SW CW BW
IGT (1)
VD = 12 V, RL = 30 Ω
I - II - III Max. 10 35 50 5 10 35 50 mA
VGT I - II - III Max. 1.2 V
VGD VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C I - II - III Min. 0.2 V
IH (2) IT = 100 mA I - II - III Max. 15 35 75 10 15 35 50 mA
ILIG = 1.2 x IGT
I - III Max. 25 50 70 10 25 50 70
mA
II Max. 30 60 110 15 30 60 80
dV/dt (2) VD = 67% VDRM, gate open, Tj = 125 °C Max. 40 400 1000 20 40 400 1000 V/µs
(dl/dt)c (2)
(dV/dt)c = 0.1 V/µs, Tj = 125 °C Min. 5.4 3.5 5.4
A/ms
(dV/dt)c = 10 V/µs, Tj = 125 °C Min. 2.8 1.5 2.98
Without snubber, Tj = 125 °C Min. 4.5 7 4.5 7
1. Minimum IGT is guaranteed at 5 % of IGT max.
2. For both polarities of A2 referenced to A1
BTA08, BTB08, T810, T835, T850
Characteristics
DS2114 - Rev 15 page 2/21