Symbol
VDS
VGS
IDM
TJ, TSTG
Symbol Ty
p
Max
78 110
106 150
RθJL 64 80
Junction and Storage Temperature Range
A
PD
°C
1.15
0.73
-55 to 150
TA=70°C
ID
3.4
2.7
20
Pulsed Drain Current B
Power Dissipation A
TA=25°C
Continuous Drain
Current A
Maximum UnitsParameter
TA=25°C
TA=70°C
Absolute Maximum Ratings TA=25°C unless otherwise noted
V
V±12Gate-Source Voltage
Drain-Source Voltage 30
°C/W
Maximum Junction-to-Ambient ASteady-State °C/W
W
Maximum Junction-to-Lead CSteady-State °C/W
Thermal Characteristics each FET
Parameter Units
Maximum Junction-to-Ambient At ≤ 10s RθJA
AO6800
Dual N-Channel Enhancement Mode Field Effect Transistor
July 2001
Features
VDS (V) = 30V
ID = 3.4 A
RDS(ON) < 60mΩ (VGS = 10V)
RDS(ON) < 75mΩ (VGS = 4.5V)
RDS(ON) < 115mΩ (VGS = 2.5V)
General Description
The AO6800 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications.
G1
D1
S1
TSOP6
Top View
G2
S2
G1
D2
S1
D1
1
2
3
6
5
4
G2
D2
S2
Alpha & Omega Semiconductor, Ltd.
AO6800
Symbol Min Typ Max Units
BVDSS 30 V
1
TJ=55°C 5
IGSS 100 nA
VGS(th) 0.6 1 1.4 V
ID(ON) 20 A
50 60
TJ=125°C 66 80
60 75 m
Ω
88 115 m
Ω
gFS 7.8 S
VSD 0.8 1 V
IS1.5 A
Ciss 390 pF
Coss 54.5 pF
Crss 41 pF
Rg3Ω
Qg4.96 nC
Qgs 0.8 nC
Qgd 1.72 nC
tD(on) 6.8 ns
tr3.6 ns
tD(off) 35.2 ns
tf13.7 ns
trr 11.4 ns
Qrr 6nC
Gate resistance VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
IF=3.4A, dI/dt=100A/µs
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
VGS=4.5V, VDS=15V, ID=3.4A
Gate Source Charge
Gate Drain Charge
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=4.7Ω,
RGEN=6Ω
mΩ
VGS=4.5V, ID=3A
IS=1A,VGS=0V
VDS=5V, ID=3A
RDS(ON) Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
IDSS µA
Gate Threshold Voltage VDS=VGS ID=250µA
VDS=24V, VGS=0V
VDS=0V, VGS=±12V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=3.4A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
ID=250µA, VGS=0V
VGS=2.5V, ID=2A
VGS=4.5V, VDS=5V
VGS=10V, ID=3.4A
Reverse Transfer Capacitance
A: The value of R θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R
θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The
SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AO6800
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
3
6
9
12
15
012345
VDS (Volts)
Fig 1: On-Region Characteristics
ID (A)
VGS=2V
2.5V
3V
4.5V
10V
0
2
4
6
8
10
0 0.5 1 1.5 2 2.5 3 3.5
VGS(Volts)
Figure 2: Transfer Characteristics
ID(A)
0
25
50
75
100
125
150
0246810
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gat
e
Voltage
RDS(ON) (mΩ)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
IS (A)
25°C
125°C
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
Normalized On-Resistance
VGS=2.5V
VGS=10V
VGS=4.5V
0
50
100
150
200
0246810
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
RDS(ON) (mΩ)
25°C
125°C
VDS=5V
VGS=2.5V
V
GS
=4.5
V
V
GS
=10
V
ID=2A
25°C
125°C
Alpha and Omega Semiconductor, Ltd.
AO6800
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0123456
Qg (nC)
Figure 7: Gate-Charge Characteristics
VGS (Volts)
0
100
200
300
400
500
600
0 5 10 15 20 25 30
VDS (Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
Ciss
0
5
10
15
20
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Power (W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
ZθJA Normalized Transient
Thermal Resistance
Coss Cr
ss
0.1
1.0
10.0
100.0
0.1 1 10 100
VDS (Volts)
ID (Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
µ
s
1
0
m
s
1m
s
0.1s
1s
10s
DC
RDS(ON)
limite
d
TJ(Max)=150°C
TA=25°C
10
µ
s
VDS=15V
ID=3.4A
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=110°C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C
TA=25°C
Alpha & Omega Semiconductor, Ltd.
SYMBOLS
NOTE:
1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN.
THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD
2. TOLERANCE ±0.100 mm (4 mil) UNLESS OTHERWISE
SPECIFIED
3. COPLANARITY : 0.1000 mm
4. DIMENSION L IS MEASURED IN GAGE PLANE
0.500.40b0.35
5°8°θ1 1°
0.95 BSC
E1 1.60
E
L
e
2.60
0.37
D
c2.70
0.10
2.001.80
2.80
−−−
3.00
−−−
2.90
0.13 3.10
0.20
DIMENSIONS IN MILLIMETERS
MIN
A1
A2
A0.00
1.00
1.00
MAXNOM
−−−
1.10 0.10
1.15
1.25−−−
e1 1.90 BSC
TSOP-6 Package Data
RECOMMENDED LAND PATTERN
NOTE:
P N - PART NUMBER CODE.
D - YAER AND WEEK CODE.
L N - ASSEMBLY LOT CODE, FAB AND
ASSEMBLY LOCATION CODE.
TSOP-6 PART NO. CODE
PACKAGE MARKING DESCRIPTION
θ
SEATING PLANE
GAUGE PLANE
ALPHA & OMEGA
SEMICONDUCTOR, INC.
H0
AO6800
CODEPART NO.
ALPHA & OMEGA
SEMICONDUCTOR, INC.
TSOP-6 Tape and Reel Data
TSOP-6 Carrier Tape
TSOP-6 Reel
TSOP-6 Tape
Leader / Trailer
& Orientation
