Type No: |-Application|: Remarks AIPA & & | LSS Si, PNP,E 750} -8 | _ 199 -5 more than} ~0.2; 5 ['essithan| 47 | a9 150 RTIPIMU & & | LSS Si,PNP,E -50| ~6 5 60 |-0.2; ~5 jess har) ig | 47 ATINZOU & & | LSS Si.NPN,E 50 | 6 | 100 5 1 ~ = - 22 | | 200 RTIPAIOU we &e | LSS Si, PNP,E 50} ~6 |100 5 | 1 [more than) -0.2; ~1o;'e8sa" 47 ~ 150 ATINGIOU we | LSS Si.NPNLE | 50 | 6 | 100 5 1 100 6 - |) = - 68 > - | 200 ATIPIAQU & & | LSS Si,PNP,E | ~50! -6 |-100 ~5 i -1 ~0.2,10|'es8 Bar jg ~~ 150 Ultra RTINIAIU & & | LSS Si,NPN.E | 50 | 10 5 5 0.2 5 5 [lessthan 9 | 19 6 ATINZAIU e & | LSS Si,NPN,E | 50. 10 5 | 5 02 5 | essthen 20 22 | en ATINIU & & | LSS SiNPN,E | 50) 10 5 oa O28 east Ay ap BTINGEU & & | LSS Si,NPN,E 50 6 100 5 5 02 5 jfeseier 47 | 22 2005 ATINGAU ee | LSS SiNPN,E 50. 6 5) OS 0.2 5 (essen 4g 7 47 ATINGU ee | LSS Si,NPN.E 50 | 6 5 1 |morethan) 0.2 9 10 (ees thar) gz? | ATINNU ee | LSS Si,NPN,E 50. 6 5 | 1 | 100 | 02) 10 |eesiran Gg 7 ATIPI41M | LSS Si.PNP,E ~50 |} -10 ~5 | -5 ~0.2, 5 fesse: ig 10 RTIP241M | LSS Si,PNP,E ~50! 10 )}~ 100: -5 5) 0.2; [lesthan! 99 1 99 RTiP44tM | LSS Si,PNP,E ~50) -10 150. 150 28. 78 ~0.2) 5 Jessen 47 | 47 RTIPZIIM oe tr | LSS Si,PNP,E -50| -6 5 5 |morethany ~ | - - (22) 221. ATIPOTM ee | LSS Si,PNP,E -50; 6 | 100 5 <Te2 a7 1 RTIPA3IN- | LSS SiPNP,E -50) ~6 - 47 | 47 RTIP434M | LSS Si,PNP,E ~50; -8 | _ 100 : fess thani 47 | 22 RTIP144M | LSS Si,PNP,E ~50| ~6 tess than) 10 | 47 ATINGOM ke | LSS Si.NPNLE 50 | 6 | 100 ~ 2.2 | | 200 RTIP430M | LSS Si,PNP,E ~50| 6 |100 fess than! 47 | = | 150 | SC-70 ATINGGM ke | LSS Si,NPN.E 50; 6 | 100 - [68] | 200 RT{P140M.| LSS Si,PNP,E ~50/ ~6 |~100 -1) tess hari 10 | | 150 RTIN{41M | LSS Si,NPN,E 50 | 10 _ 5 | 5 lessthari ia | 10 RTIN241M | LSS Si,NPNE 50 | 10 5 5 imore than 22 | 5 fess than) 92 | 22 RTIN441M | LSS Si,NPN,E 50 | 10 8 5g 1.0255 fess than) 47 | 47 RTIN434M_| LSS SiNPNE 50 | 6 | 100 (5 5 | 02) 5 | eee") 47 | 22 | 200 RTIN144M | LSS Si,NPN,E 50 | 6 5 5 a2) jfessthan ig | 47 RTiN430M | LSS Si,NPN,E 50 | 6 | 5 | 1 morethan| 0.2 | 10 [esse 47 | RTIN140M | LSS Si,NPN.E 50 | 6 "6 | 4 | 100 | 02) 10 | eesthan hg PO @ Transistor with internal Resistor Stick lead type (Frame type) Max. ratings : Type-No.. | Application | Structure {<= : aes md E Meeo.) Moko | Meso Mog : : PAE AE AVE () E ofA ATIPISIS & #. | LSS SiPNP|E | ~50/ -50| 10 -5 | -5 0.2; ~5 jee") 10 | 10 ATIPUIS & &e | LSS Si,PNP,E | -50 | -50! ~10/~100 i ~5 | -5 -0.2) 5 fess than) a9 | 20 ATIPUIS & | LSS SiPNP,E | 50/ 50/ -10 | -5 | -5 0.2; 5 (fess an) a7 | 47 RTIPQHS & &e | LSS Si,PNP,E | ~50) -50} 6 5 5 |morethan) - | ~ 2.2 | 22) 4 RTIPQTS & & | LSS Si,PNP,E | -50/~-50| -6 | 100: | 5 | 50 ~~ - 2.2, 47 | ATIPAIS ek | LSS Si.PNP,E | 50,50| 5 5 | 5 =a 471 47 ATIPUS | LSS Si,PNP.E | ~50- 50) -6 | sop - | -5 70.2) 5 [8s her) 47 | 22 ATIPIMS ee | LSS Si,PNP,E | -50' -50' 6 -5 | +5 26.2. [fess than) ig | 47 ' i Small | Producing ATINENS ae | LSS SiNPN,E) 50 50 , 6 | 100 8 ty io = 22 | 200 a tok ead ATIPAIS & & | LSS SiPNP.E -50/-50, -6 |-100) 300 150 | -5 | 1 |morethan -0.2 10 |'*55"2" 4.7 | 150 | (Frame! pe ATINGWS | LSS SiNPN.E 50 | 50, 6 | 100 5 1 100 - i = Te 68 | 200 ne) | present ATIPIOS & & | LSS Si,PNP,E 50|-50) -6 |100 , 78 in 0.2) 10 889" 10 | 150 | ATINIAIS we | LSS SiNPN.E 50 | 50 | 10 5 | 5 02) 5 jssgrar 0: 10 ATINUIS & a | LSS SiNPN.E| 50 | 50 | 10 5 8 ore than 2:21. 5 anh 22 22 | ATINALIS ee | LSS SLNPN.E | 50 | 50 | 10 5 | 5 50 2:2.) 5 less than 47 47 ATINMS & &e | LSS SiNPNE | 50 | 50 | 6 | 100, 5 5 0.2 5 jester 47 22 | 200 | ATINIUS #& | LSS SiNPN.E | 50 | 50] 6 5 | 5 0.2/| 5 (lesser io | 47 ATINGIS ae | LSS SiNPNE | 50 | 50 | 6 5 | 1 |morethan) 0.2 | 10 [9 88") 4.7 | | RTIKIGS & | LSS Si.NPN.E | 50 | 50 | 6 5 1 100 | 0.2; 10 jTess fh) ig | fee) cc OQ I G anna is ed pan on a z gS n ad a = = ra) 152 * : New product * % : Under development