
Collector-Emitter voltage : VCE [V]
10
Capacitance : Cies, Coes, Cres [nF]
Capacitance vs. Collector-Emitter voltage
Tj=25°C
0 5 10 15 20 25 30 35
100
IGBT Module
Switching time vs. RG
Vcc=300V, Ic=20A, VGE=±15V, Tj=25°C
Dynamic input characteristics
Tj=25°C
Gate resistance : RG [ohm]
0 100 200 300 400 500 600
Gate charge : Qg [nC]
100
1000
10
Switching time : ton, tr, toff, tf [n sec.]
Collector-Emitter voltage : VCE [V]
Gate-Emitter voltage : VGE [V]
50
40
30
20
10
0 0 100 200 300 400 500 600 700
Collector-Emitter voltage : VCE [V]
Collector current : Ic [A]
0 20 40 60 80 100
25
20
15
10
5
0
500
400
300
200
100
0
Switching time vs. RG
Vcc=300V, Ic=20A, VGE=±15V, Tj=125°C
Gate resistance : RG [ohm]
100
1000
10
Switching time : ton, tr, toff, tf [n sec.]
Reversed biased safe operating area
+VGE=15V, -VGE = 15V, Tj = 125°C, RG = 120 ohm
<<> Typical short circuit capability
Vcc=400V, RG=120 ohm, Tj=125°C
Short circuit time : tsc [µs]
1000
300
250
200
150
100
50
0 5 10 15 20 25
60
50
40
30
20
10
0
Short circuit time current : Isc [A]
Characteristics
1MB20-060,1MB20D-060
1MB20-060, 1MB20D-060
Gate voltage : VGE [V]
0 100 200 300 400 500 600
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