SiHG180N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES D * 4th generation E series technology TO-247AC * Low figure-of-merit (FOM) Ron x Qg * Low effective capacitance (Co(er)) * Reduced switching and conduction losses G * Avalanche energy rated (UIS) * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S D S G N-Channel MOSFET APPLICATIONS * * * * Server and telecom power supplies Switch mode power supplies (SMPS) Power factor correction power supplies (PFC) Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting * Industrial - Welding - Induction heating - Motor drives - Battery chargers - Solar (PV inverters) PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 C 650 VGS = 10 V Qg max. (nC) 0.155 33 Qgs (nC) 7 Qgd (nC) 11 Configuration Single ORDERING INFORMATION Package TO-247AC Lead (Pb)-free and halogen-free SiHG180N60E-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 600 Gate-source voltage VGS 30 Continuous drain current (TJ = 150 C) VGS at 10 V TC = 25 C TC = 100 C Pulsed drain current a ID IDM Linear derating factor UNIT V 19 12 A 44 1.25 W/C Single pulse avalanche energy b EAS 111 mJ Maximum power dissipation PD 156 W TJ, Tstg -55 to +150 C Operating junction and storage temperature range Drain-source voltage slope TJ = 125 C Reverse diode dv/dt d Soldering recommendations (peak temperature) c For 10 s dv/dt 70 22 260 V/ns C Notes a. Repetitive rating; pulse width limited by maximum junction temperature b. VDD = 120 V, starting TJ = 25 C, L = 28.2 mH, Rg = 25 , IAS = 2.8 A c. 1.6 mm from case d. ISD ID, di/dt = 100 A/s, starting TJ = 25 C S18-0933-Rev. A, 17-Sep-2018 Document Number: 92141 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHG180N60E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum junction-to-ambient RthJA - 40 Maximum junction-to-case (drain) RthJC - 0.8 UNIT C/W SPECIFICATIONS (TJ = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage (N) VDS VGS = 0 V, ID = 250 A 600 - - V VDS/TJ Reference to 25 C, ID = 1 mA - 0.63 - V/C VGS(th) VDS = VGS, ID = 250 A 3.0 - 5.0 V VGS = 20 V - - 100 nA VGS = 30 V - - 1 A VDS = 600 V, VGS = 0 V - - 1 VDS = 480 V, VGS = 0 V, TJ = 125 C - - 10 Gate-source leakage IGSS Zero gate voltage drain current IDSS A - 0.155 0.180 gfs VDS = 20 V, ID = 9.5 A - 5.3 - S Input capacitance Ciss 1085 - Coss - 56 - Reverse transfer capacitance Crss VGS = 0 V, VDS = 100 V, f = 1 MHz - Output capacitance - 5 - Effective output capacitance, energy related a Co(er) - 41 - Effective output capacitance, time related b Co(tr) - 251 - - 22 33 - 7 - Drain-source on-state resistance Forward transconductance a RDS(on) VGS = 10 V ID = 9.5 A Dynamic pF VDS = 0 V to 480 V, VGS = 0 V Total gate charge Qg Gate-source charge Qgs VGS = 10 V ID = 9.5 A, VDS = 480 V Gate-drain charge Qgd - 11 - Turn-on delay time td(on) - 14 28 VDD = 480 V, ID = 9.5 A, VGS = 10 V, Rg = 9.1 - 49 98 - 22 44 - 23 46 f = 1 MHz, open drain 0.3 0.7 1.4 - - 19 - - 44 Rise time Turn-off delay time tr td(off) Fall time tf Gate input resistance Rg nC ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulsed diode forward current ISM Diode forward voltage VSD Reverse recovery time trr Reverse recovery charge Qrr Reverse recovery current IRRM MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 C, IS = 9.5 A, VGS = 0 V TJ = 25 C, IF = IS = 9.5 A, di/dt = 100 A/s, VR = 25 V S - - 1.2 V - 282 564 ns - 3.6 7.2 C - 24 - A Notes a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS S18-0933-Rev. A, 17-Sep-2018 Document Number: 92141 2 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHG180N60E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 3.0 45 TOP 15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 7V 6V BOTTOM 5 V 35 30 25 ID = 9.5 A RDS(on), Drain-to-Source On-Resistance (Normalized) ID, Drain-to-Source Current (A) 40 TJ = 25 C 20 15 10 5 2.0 1.5 1.0 VGS = 10 V 0.5 0 0 0 5 10 15 VDS, Drain-to-Source Voltage (V) -60 -40 -20 20 Fig. 1 - Typical Output Characteristics 32 15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 7V 6V BOTTOM 5 V 20 Fig. 4 - Normalized On-Resistance vs. Temperature TJ = 150 C VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds shorted Crss = Cgd Coss = Cds + Cgd 10 000 C, Capacitance (pF) 24 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (C) 100 000 TOP 28 ID, Drain-to-Source Current (A) 2.5 16 12 Ciss 1000 100 Coss 10 Crss 8 4 0 1 5 10 15 VDS, Drain-to-Source Voltage (V) 20 Fig. 2 - Typical Output Characteristics 0 100 200 300 400 500 VDS, Drain-to-Source Voltage (V) 600 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 10 000 45 9 8 40 Coss, Output Capacitance (pF) ID, Drain-to-Source Current (A) TJ = 25 C 35 30 TJ = 150 C 25 20 15 10 7 1000 6 5 Eoss 4 100 3 Coss 2 1 5 VDS = 29.5 V 10 0 0 5 10 15 VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics S18-0933-Rev. A, 17-Sep-2018 20 0 0 100 200 300 400 500 Eoss, Output Capacitance Stored Energy (J) 0 600 VDS, Drain-to-Source Voltage (V) Fig. 6 - Coss and Eoss vs. VDS Document Number: 92141 3 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHG180N60E www.vishay.com 20 VDS = 480 V VDS = 300 V VDS = 120 V 16 9 ID, Drain Current (A) VGS, Gate-to-Source Voltage (V) 12 Vishay Siliconix 6 8 3 4 0 0 0 7 14 21 Qg, Total Gate Charge (nC) 25 28 Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage 50 75 100 125 TC, Case Temperature (C) 150 Fig. 10 - Maximum Drain Current vs. Case Temperature 100 775 VDS, Drain-to-Source Breakdown Voltage (V) ISD, Reverse Drain Current (A) 12 TJ = 150 C 10 TJ = 25 C 1 VGS = 0 V 0.1 0.2 0.4 0.6 0.8 1.0 VSD, Source-Drain Voltage (V) 1.2 1.4 Fig. 8 - Typical Source-Drain Diode Forward Voltage 750 725 700 675 650 ID = 250 A 625 600 575 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (C) Fig. 11 - Temperature vs. Drain-to-Source Voltage 1000 ID, Drain Current (A) 100 Operation in this area limited by RDS(on) IDM limited 10 100 s Limited by RDS(on)a 1 1 ms TC = 25 C, TJ = 150 C, single pulse 0.1 10 ms BVDSS limited 0.01 1 10 100 VDS, Drain-to-Source Voltage (V) 1000 Fig. 9 - Maximum Safe Operating Area Note a. VGS > minimum VGS at which RDS(on) is specified S18-0933-Rev. A, 17-Sep-2018 Document Number: 92141 4 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHG180N60E www.vishay.com Vishay Siliconix 1 Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single pulse 0.01 0.0001 0.001 0.01 Pulse Time (s) 0.1 1 Fig. 12 - Normalized Transient Thermal Impedance, Junction-to-Case RD VDS VDS tp VGS D.U.T. VDD Rg + - VDD VDS 10 V Pulse width 1 s Duty factor 0.1 % IAS Fig. 13 - Switching Time Test Circuit Fig. 16 - Unclamped Inductive Waveforms VDS Qg 10 V 90 % Qgs 10 % VGS Qgd VG td(on) td(off) tr tf Charge Fig. 17 - Basic Gate Charge Waveform Fig. 14 - Switching Time Waveforms Current regulator Same type as D.U.T. L VDS Vary tp to obtain required IAS 50 k 12 V D.U.T. Rg 0.2 F 0.3 F + - VDD + D.U.T. IAS - VDS 10 V tp 0.01 VGS 3 mA Fig. 15 - Unclamped Inductive Test Circuit IG ID Current sampling resistors Fig. 18 - Gate Charge Test Circuit S18-0933-Rev. A, 17-Sep-2018 Document Number: 92141 5 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHG180N60E www.vishay.com Vishay Siliconix Peak Diode Recovery dv/dt Test Circuit + D.U.T. Circuit layout considerations * Low stray inductance * Ground plane * Low leakage inductance current transformer 3 + 2 - - 4 + 1 Rg * * * * 1 Driver gate drive Period P.W. + V - DD dv/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test D= P.W. Period V GS = 10 V a 2 D.U.T. ISD waveform Reverse recovery current 3 D.U.T. VDS Body diode forward current di/dt waveform Diode recovery dv/dt Re-applied voltage V DD Body diode forward drop 4 Inductor current Ripple 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 19 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?92141. S18-0933-Rev. A, 17-Sep-2018 Document Number: 92141 6 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. (c) 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000