Features * * * * * * * Active Mixer with Conversion Gain No External LO Driver Necessary Low LO Drive Level Required RF and LO Ports May Be Driven Single-ended Single 5-V Supply Voltage High LO-RF Isolation Broadband Resistive 50- Impedances on All Three Ports Applications * Infrastructure Digital Communication Systems * 1700 MHz to 2300 MHz Receivers for CDMA/PCS/DCS/UMTS Base Stations Electrostatic sensitive device. Observe precautions for handling. 1700 MHz 2300 MHz High Linearity SiGe Active Receiver Mixer Description T0781 The T0781 is a high linearity active mixer which is manufactured using Atmel's advanced Silicon-Germanium (SiGe) technology. This mixer features a frequency range of 1700 MHz to 2300 MHz. It operates from a single 5-V supply and provides 12 dB of conversion gain while requiring only 0 dBm input to the integrated LO driver. An IF amplifier is also included. Preliminary The T0781 incorporates internal matching on each RF, IF and LO ports to enhance ease of use and to reduce the external components required. The RF and LO inputs can be driven differentially or single-ended. Figure 1. Block Diagram RFP RFN 4 5 1 16 13 IFP IFN LOP 12 LON Rev. 4534C-SIGE-10/03 Pin Configuration Figure 2. Pinning SSOP16 IFP VCC GND RFP RFN GND VCC L1 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 IFN VCC GND LOP LON GND VCC L2 Pin Description 2 Pin Symbol Function 1 IFP IF positive output 2 VCC 5-V power supply 3 GND Ground 4 RFP RF positive input 5 RFN RF negative input 6 GND Ground 7 VCC 5-V power supply 8 L1 External inductor terminal 9 L2 External inductor terminal 10 VCC 5-V power supply 11 GND Ground 12 LON Local oscillator, negative input 13 LOP Local oscillator, positive input 14 GND Ground 15 VCC 5-V power supply 16 IFN IF negative output T0781 [Preliminary] 4534C-SIGE-10/03 T0781 [Preliminary] Absolute Maximum Ratings (1) All voltages are referred to GND. Parameters Supply voltage Symbol Value Unit VCC 5.5 V LO input LOP, LON 10 dBm IF input RFP, RFN 15 V Operating temperature TOP -40 to +85 C Storage temperature Tstg -65 to +150 C Notes: 1. The device may not survive all maximum values applied simultaneously. Thermal Resistance Parameters Symbol Value Unit Junction ambient RthJA TBD K/W Junction case RthJC 46 C/W Electrical Characteristics Test Conditions: VCC = 5 V, Tamb = 25C, RF input: -40 dB at 1880 MHz, LO input: 0 dBm at 1680 MHz 1700 to 2000 MHz Operation No. 1 Parameters Test Conditions Pin Symbol Min. For RF = 2000 to 2300 MHz operation, singleended RF + LO drive is recommended 4, 5 fRF Typ. 2000 to 2300 MHz Operation Max. Min. 1700 2000 fLO 1400 1, 16 FIF 30 200 4, 5 IIP3 12 Typ. Max. Unit Type* 2000 2300 MHz B, C 2000 1700 2300 MHz B, C 300 30 200 300 MHz B, C 15 12 15 dBm D AC Performance 1.1 RF frequency range 1.1 1 LO frequency range 1.2 IF frequency range 1.3 Input IP3 1.4 Input P1dB 4, 5 P1dB 1 2 3 5 dBm D 1.5 Conversion gain 1, 16 G 9 12 6 9 dB A RF1 = RF2 = -15 dBm/tone, 1 MHz spacing *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Note: 1. The return losses shown were measured with the T0781 mounted on Atmel's FR4 evaluation boards using standard matching practices as indicated on the respective application schematic (see Figure 23 on page 12 and Figure 24 on page 14). Users following the RF, LO and IF matching guidelines will achieve similar performance. 3 4534C-SIGE-10/03 Electrical Characteristics (Continued) Test Conditions: VCC = 5 V, Tamb = 25C, RF input: -40 dB at 1880 MHz, LO input: 0 dBm at 1680 MHz 1700 to 2000 MHz Operation No. Parameters Test Conditions Pin Symbol 1, 16 Min. Typ. Max. NFSSB 14 15 2000 to 2300 MHz Operation Min. Typ. Max. Unit Type* 16 19 dB D 1.6 SSB noise figure 1.7 RF return loss Matched to 50 W(1) 4, 5 RLRF 20 20 dB D 1.8 LO return loss Matched to 50 W(1) 12, 13 RLLO 20 20 dB D 1.9 IF return loss Matched to 50 W(1) 1, 16 RLIF 20 20 dB D 1.1 0 LO drive Matched to 50 W 12, 13 PLO 2 -3 0 +3 -3 0 +3 dBm D Isolation Performance 2.1 Leakage (LO-RF) 12, 13 ALO-RF -60 -40 -30 -20 dBm D 2.2 Leakage (LO-IF) 12, 13 ALO-IF -30 -20 -30 -20 dBm D -53 -40 -35 -25 dBm D 5.0 5.25 5.0 5.25 V A 160 180 160 180 mA A 2.3 Leakage (RF-IF) 3 Miscellaneous 3.1 3.2 Supply voltage 2, 7, 10, 15 VCC Supply current 2, 7, 10, 15 ICC 4.75 4.75 *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Note: 1. The return losses shown were measured with the T0781 mounted on Atmel's FR4 evaluation boards using standard matching practices as indicated on the respective application schematic (see Figure 23 on page 12 and Figure 24 on page 14). Users following the RF, LO and IF matching guidelines will achieve similar performance. 4 T0781 [Preliminary] 4534C-SIGE-10/03 T0781 [Preliminary] 1700 MHz to 2000 MHz: Typical Device Performance Figure 3. Conversion Gain versus Temperature, PLO = 0 dBm Conversion Gain (dB) 20.0 Conversion Gain vs Tem perature Plo = 0dBm 16.0 12.0 8.0 4.0 0.0 1400 -40C +25C +85C 1600 1800 2000 Frequency (MHz) 2200 Figure 4. Conversion Gain versus LO Drive, Tamb = 25C Conversion Gain vs LO Drive T=+25C Conversion Gain (dB) 20.0 16.0 12.0 8.0 4.0 0.0 1400 -3 dBm 0 dBm +3 dBm 1600 1800 2000 Frequency (MHz) 2200 Figure 5. Leakages, PLO = 0 dBm at Pins, PRF = -20 dBm at Pins, Tamb = 25C Leakages Plo=0 dBm at pins, Prf=-20 dBm at pins, T=+25C Leakage (dBm) 0 LO-RF RF-IF LO-IF -20 -40 -60 -80 1400 1600 1800 2000 Frequency (MHz) 2200 5 4534C-SIGE-10/03 Figure 6. Input IP3 versus Temperature PLO = 0 dBm Input IP3 vs Tem perature Plo = 0dBm Input IP3 (dBm) 20.0 -40C +25 C +85 C 18.0 16.0 14.0 12.0 10.0 1700 1750 1800 1850 1900 1950 2000 Frequency (MHz) Figure 7. Input IP3 versus LO Drive, Tamb = 25C Input IP3 vs LO Drive T=+25C Input IP3 (dBm) 20.0 -3 dBm 0 dBm +3dBm 18.0 16.0 14.0 12.0 10.0 1700 1750 1800 1850 1900 Frequency (MHz) 1950 2000 Figure 8. Noise Figure versus Temperature, PLO = 0 dBm Noise Figure vs Tem perature Plo=0dBm Noise Figure (dB) 20 -40C +25C +85C 18 16 14 12 10 1700 1750 1800 1850 1900 1950 2000 Frequency (MHz) 6 T0781 [Preliminary] 4534C-SIGE-10/03 T0781 [Preliminary] Figure 9. RF and LO Return Loss, Tamb = 25C RF & LO Return Loss (Note 1) T=+25C 0 RF RL Return Loss (dB) -5 LO RL -10 -15 -20 -25 -30 1400 1600 1800 2000 Frequency (MHz) 2200 Figure 10. IF Return Loss, Tamb = 25C IF Return Loss (Note 1) T=+25C 0 Reutrn Loss (dB) -5 -10 -15 -20 -25 -30 30 60 90 120 150 180 210 240 270 300 Frequency (MHz) Figure 11. Input P1dB versus Temperature, PLO = 0 dBm Input P1dB vs Tem perature Plo=0 dBm Input P1dB (dBm) 5.0 3.0 1.0 -1.0 -40C +25 C +85 C -3.0 -5.0 1700 1750 1800 1850 1900 1950 2000 Frequency (MHz) 7 4534C-SIGE-10/03 Figure 12. Input P1dB versus LO Drive, Tamb = 25C Input P1dB vs LO Drive T=+25C Input P1dB (dBm) 5.0 3.0 1.0 -1.0 -3 dBm 0 dBm +3dBm -3.0 -5.0 1700 1750 1800 1850 1900 1950 2000 Frequency (MHz) 8 T0781 [Preliminary] 4534C-SIGE-10/03 T0781 [Preliminary] 2200 MHz to 2300 MHz: Typical Device Performance, Single-ended Drive Figure 13. Conversion Gain versus Temperature, PLO = 0 dBm Conversion Gain vs Tem perature Plo=0 dBm Conversion Gain (dB) 20 -40C +25C +85C 16 12 8 4 0 2000 2100 2200 2300 2400 2500 Frequency (MHz) Figure 14. Conversion Gain versus LO Drive, Tamb = 25C Conversion Gain vs LO Drive T=+25C Conversion Gain (dB) 20 -3 dBm 0 dBm +3 dBm 16 12 8 4 0 2000 2100 2200 2300 2400 2500 Frequency (MHz) Figure 15. Leakages, PLO = 0 dBm at Pins, PRF = -20 dBm at Pins, Tamb = 25C Leakage (dBm) -20 Leakages Plo=0 dBm at pins, Prf=-20 dBm at pins, T=+25C LO-RF RF-IF LO-IF -25 -30 -35 -40 -45 1800 1900 2000 2100 2200 2300 2400 2500 Frequency (MHz) 9 4534C-SIGE-10/03 Figure 16. Input IP3 versus Temperature PLO = 0 dBm Input IP3 vs Tem perature Plo=0dBm Input IP3 (dBm) 20.0 -40C +25C +85C 18.0 16.0 14.0 12.0 10.0 2000 2050 2100 2150 2200 Frequency (MHz) 2250 2300 Figure 17. Input IP3 versus LO Drive, Tamb = 25C Input IP3 vs LO Drive T=+25C Input IP3 (dBm) 20.0 -3 dBm 0 dBm +3 dBm 18.0 16.0 14.0 12.0 10.0 2000 2050 2100 2150 2200 Frequency (MHz) 2250 2300 Figure 18. Input P1dB versus Temperature, Tamb = 25C Input P1dB vs Tem perature Plo=0dBm Input P1dB (dBm) 10.0 -40C +25C +85C 8.0 6.0 4.0 2.0 0.0 2000 2050 2100 2150 2200 2250 2300 Frequency (MHz) 10 T0781 [Preliminary] 4534C-SIGE-10/03 T0781 [Preliminary] Figure 19. RF and LO Return Loss, VCC = 5 V, Tamb = 25C RF & LO Return Loss (Note 1) Vcc=5V, T=+25C Return Loss (dB) 0 -5 RF RL -10 LO RL -15 -20 -25 -30 -35 1800 1900 2000 2100 2200 2300 2400 255 300 Frequency (MHz) Figure 20. IF Return Loss, Tamb = 25C IF Return Loss (Note 1) T=25C Reutrn Loss (dB) 0 -5 -10 -15 -20 -25 -30 30 75 120 165 210 Frequency (MHz) Figure 21. Input P1dB versus Temperature, PLO = 0 dBm Input P1dB vs Tem perature Plo=0dBm Input P1dB (dBm) 10.0 8.0 6.0 -40C +25C +85C 4.0 2.0 0.0 2000 2050 2100 2150 2200 2250 2300 Frequency (MHz) 11 4534C-SIGE-10/03 Figure 22. Input P1dB versus LO Drive, Tamb = 25C Input P1dB vs LO Drive T=25C Input P1dB (dBm) 10.0 -3 dBm 0 dBm +3 dBm 8.0 6.0 4.0 2.0 0.0 2000 2050 2100 2150 2200 2250 2300 Frequency (MHz) Figure 23. 1700 MHz to 2000 MHz Application Schematic (Differential Drive) 5V IFout L1 J1 Vcc C4 1 2 3 4 5 6 7 8 Vcc C6 RFin J2 T2 T1 IC1 C10 Vcc C12 L7 Vcc C3 16 15 14 13 12 11 10 9 C5 Vcc J3 C7 LOin C8 T3 C11 Vcc C13 L9 Vcc C15 12 T0781 C1 C2 C14 T0781 [Preliminary] 4534C-SIGE-10/03 T0781 [Preliminary] Bill of Materials (for 1700 MHz to 2000 MHz Evaluation Board) Component Designator Vendor Part Number IC1 Atmel T0781 J1, J2, J3 Johnson ComponentsTM 742-0711-841 SMA connector, end launch with tab, for 1.07 mm board 1:1 Panansonic(R) EHF-FD1619 RF transformer T1 1:1 Mini-Circuits (R) TC1-1 IF transformer L1 1 H Wurth Elektronik(R) 74476401 Inductor, 1210 footprint, minimum 200 mA rating L7, L9 see Table 1 Wurth Elektronik 744786110 Inductor, 0603 footprint, high Q series T2, T3 C1 Value 10 F KEMET (R) (R) T491A106_010AS Description SiGe receiver mixer Tantal chip capacitor, size A C4, C5, C12, C13 6.8 pF Vishay C14, C15 100 pF Vishay VJ0402A6R8JXXA_ Capacitor, 0402 footprint VJ0402A101JXXA_ Capacitor, 0402 footprint C2, C3 120 pF Vishay VJ0402A121JXXA_ Capacitor, 0402 footprint C6, C10 2.7 pF Vishay VJ0402A2R7JXXA_ Capacitor, 0402 footprint C7, C11 3.9 pF Vishay VJ0402A3R9JXXA_ Capacitor, 0402 footprint C8 n.c. - - Capacitor, 0402 footprint The T0781 utilizes an IF tank circuit to maximize performance across the entire IF bandwidth. the off-chip inductors L7 and L9 resonate with an on-chip capacitor (4 pF) to provide IF tunability. therefore, L7 and L9 must be selected such that the resonance occurs at the desired IF. The following table provides the inductor values required on the evaluation board for some common intermediate frequencies. By default, all evaluation board are shipped with L7 = L9 = 100 nH, resulting in a 200 MHz resonant IF. Table 1. IF Tank Circuit IF (MHz) Typical L7, L9 (nH) Wurth Elektronik Part Number 70 680 744780680 150 150 74478625 200 100 744786110 300 39 744786131 13 4534C-SIGE-10/03 Bill of Materials (for 2000 MHz to 2300 MHz Evaluation Board) Component Designator Vendor Part Number IC1 Atmel T0781 J1, J2, J3 Johnson Components 742-0711-841 SMA connector, end launch with tab, for 1.07 mm board Panansonic EHF-FD1619 RF transformer IF transformer T2, T3 Value 1:1 Description SiGe receiver mixer T1 1:1 Mini-Circuits TC1-1 L1 1 H Wurth Elektronik 74476401 Inductor, 1210 footprint, minimum 200 mA rating L7, L9 see Table 1 on page 13 Wurth Elektronik 744786110 Inductor, 0603 footprint, high Q series C1 10 F KEMET T491A106_010AS C4, C5, C12, C13 6.8 pF Vishay VJ0402A6R8JXXA_ Capacitor, 0402 footprint C14, C15 100 pF Vishay VJ0402A101JXXA_ Capacitor, 0402 footprint Tantal chip capacitor, size A C2, C3 120 pF Vishay VJ0402A121JXXA_ Capacitor, 0402 footprint C6, C10 2.2 pF Vishay VJ0402A2R2JXXA_ Capacitor, 0402 footprint C7, C11 2.2 pF Vishay VJ0402A2R2JXXA_ Capacitor, 0402 footprint C8 1 pF Vishay VJ0402A1R0JXXA_ Capacitor, 0402 footprint Figure 24. Demo Test Board (Fully Asembled PCB) Figure 25. Recommended Package Footprint 14 T0781 [Preliminary] 4534C-SIGE-10/03 T0781 [Preliminary] In order to avoid soldering problems, plugging of the ground vias under the heat slug is recommended! 31.75 3.0 6.35 0.74 0.4 0.74 3.0 f0.33 via 0.7 0.9 6.9 all units are in mm - Indicates metalization - vias connect pad to underlying ground plane Remark: Heatslug must be soldered to GND. 15 4534C-SIGE-10/03 Ordering Information Extended Type Number Package Remarks T0781-6C TSSOP16 - Package Information 16 T0781 [Preliminary] 4534C-SIGE-10/03 Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Regional Headquarters Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland Tel: (41) 26-426-5555 Fax: (41) 26-426-5500 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel: (852) 2721-9778 Fax: (852) 2722-1369 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany Tel: (49) 71-31-67-0 Fax: (49) 71-31-67-2340 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France Tel: (33) 2-40-18-18-18 Fax: (33) 2-40-18-19-60 ASIC/ASSP/Smart Cards 1150 East Cheyenne Mtn. Blvd. Colorado Springs, CO 80906, USA Tel: 1(719) 576-3300 Fax: 1(719) 540-1759 Biometrics/Imaging/Hi-Rel MPU/ High Speed Converters/RF Datacom Avenue de Rochepleine BP 123 38521 Saint-Egreve Cedex, France Tel: (33) 4-76-58-30-00 Fax: (33) 4-76-58-34-80 Zone Industrielle 13106 Rousset Cedex, France Tel: (33) 4-42-53-60-00 Fax: (33) 4-42-53-60-01 1150 East Cheyenne Mtn. Blvd. Colorado Springs, CO 80906, USA Tel: 1(719) 576-3300 Fax: 1(719) 540-1759 Scottish Enterprise Technology Park Maxwell Building East Kilbride G75 0QR, Scotland Tel: (44) 1355-803-000 Fax: (44) 1355-242-743 Literature Requests www.atmel.com/literature Disclaimer: Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company's standard warranty which is detailed in Atmel's Terms and Conditions located on the Company's web site. The Company assumes no responsibility for any errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Atmel are granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel's products are not authorized for use as critical components in life support devices or systems. (c) Atmel Corporation 2003. All rights reserved. Atmel (R) and combinations thereof are the registered trademarks of Atmel Corporation or its subsidiaries, Johnson Components TM is a trademark of Emerson Electric Co., Panasonic(R) is a registered trademark of Matsushita Electric Industrial Co., Ltd., Mini-Circuits(R) is a registered trademark of Scientific Components, Wurth Elektronik (R) is a registered trademark of Adolf Wurth GmbH & Co. KG, KEMET (R) is a registered trademark of KRC Trade Corporation, Vishay(R) is a registered trademark of Vishay Intertechnology, Inc. Other terms and product names may be the trademarks of others. Printed on recycled paper. 4534C-SIGE-10/03