This product complies with the RoHS Directive (EU 2002/95/EC). DSC9G02 Silicon NPN epitaxial planar type For high-frequency amplification DSC5G02 in SSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity High transition frequency fT Contributes to miniaturization of sets, reduction of component count. Eco-friendly Halogen-free package Code SSMini3-F3-B Pin Name 1. Base 2. Emitter 3. Collector Packaging Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard) Marking Symbol: C5 Absolute Maximum Ratings Ta = 25C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 30 V Collector-emitter voltage (Base open) VCEO 20 V Emitter-base voltage (Collector open) VEBO 3 V Collector current IC 15 mA Collector power dissipation PC 125 mW Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Electrical Characteristics Ta = 25C3C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 10 mA, IE = 0 30 V Emitter-base voltage (Collector open) VEBO IE = 10 mA, IC = 0 3 V Base-emitter voltage VBE VCE = 6 V, IC = 1 mA Forward current transfer ratio * hFE VCE = 6 V, IC = 1 mA 65 Transition frequency fT VCE = 6 V, IC = 1 mA 450 Reverse transfer capacitance (Common emitter) Cre Power gain Noise figure 0.72 V 260 650 MHz VCE = 6 V, IC = 1 mA , f = 10.7 MHz 0.6 pF PG VCE = 6 V, IC = 1 mA , f = 100 MHz 24 dB NF VCE = 6 V, IC = 1 mA , f = 100 MHz 3.3 dB Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Code C D 0 Rank C D No-rank hFE 65 to 160 100 to 260 65 to 260 Marking Symbol C5C C5D C5 Product of no-rank is not classified and have no marking symbol for rank. Publication date: September 2010 Ver. AED 1 This product complies with the RoHS Directive (EU 2002/95/EC). DSC9G02 DSC9G02_PC-Ta DSC9G02_IC-VCE PC Ta IC VCE 100 75 50 25 0 40 80 120 160 16 IB = 120 A 8 4 0 200 110 A 100 A 90 A 80 A 70 A 60 A 50 A 40 A 30 A 12 Ambient temperature Ta (C) 0 2 4 Collector current IC (mA) Collector-emitter saturation voltage VCE(sat) (V) 1 Ta = 85C -30C 1 10 102 Collector current IC (mA) Ta = 85C 10 -30C 5 0 0 0.2 0.4 Transition frequency fT (MHz) 1 200 800 400 10 102 Collector current IC (mA) 2 0.6 0.8 1.0 Base-emitter voltage VBE (V) VCE = 6 V Ta = 25C 1 -30C 80 40 Ver. AED 1 10 102 Collector current IC (mA) Cob VCB 15 fT IC 0 10-1 25C DSC9G02_Cob-VCB 25C DSC9G02_fT-IC 1 600 120 0 10-1 12 20 VCE = 6 V 10-2 10-1 Ta = 85C IC VBE IC / IB = 10 25C 10 160 DSC9G02_IC-VBE VCE(sat) IC 10-1 8 VCE = 6 V Collector-emitter voltage VCE (V) DSC9G02_VCEsat-IC 10 6 Collector output capacitance (Common base, input open circuited) Cob (pF) 0 Forward current transfer ratio hFE Ta = 25C 125 hFE IC 200 20 Collector current IC (mA) Collector power dissipation PC (mW) 150 DSC9G02_hFE-IC 1.2 2.0 IE = 0 f = 1 MHz Ta = 25C 1.6 1.2 0.8 0.4 0 1 10 100 Collector-base voltage VCB (V) This product complies with the RoHS Directive (EU 2002/95/EC). DSC9G02 SSMini3-F3-B Unit: mm +0.05 1.60 -0.03 +0.05 0.375 0.05 0.26 -0.02 (5) 1.60 0.05 0.85 -0.03 +0.05 3 1 2 (0.50) +0.05 0.13 -0.02 (0.50) (0.45) 1.00 0.05 0 to 0.10 0.70 -0.03 +0.05 (5) Ver. 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