AO4406A 30V N-Channel MOSFET General Description Product Summary The AO4406A uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. ID (at VGS=10V) VDS 30V 13A RDS(ON) (at VGS=10V) < 11.5m RDS(ON) (at VGS = 4.5V) < 15.5m 100% UIS Tested 100% Rg Tested SOIC-8 D Top View D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25C Continuous Drain Current C Units V 20 V 13 ID TA=70C Maximum 30 10.4 A IDM 100 Avalanche Current C IAS 22 A Avalanche energy L=0.1mH C TA=25C EAS 24 mJ Pulsed Drain Current Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev.3.0: February 2014 3.1 PD TA=70C TJ, TSTG Symbol t 10s Steady-State Steady-State W 2 RJA RJL www.aosmd.com -55 to 150 Typ 31 59 16 C Max 40 75 24 Units C/W C/W C/W Page 1 of 6 AO4406A Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250A, VGS=0V Gate-Body leakage current VDS=0V, VGS=20V Gate Threshold Voltage VDS=VGS ID=250A 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 100 VGS=10V, ID=12A TJ=125C VGS=4.5V, ID=10A gFS Forward Transconductance VDS=5V, ID=12A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance A 5 VGS(th) Units V 1 TJ=55C Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V IGSS RDS(ON) Typ 100 nA 1.9 2.5 V 9.5 11.5 14 17 12.5 15.5 m 1 V 4 A A 45 0.75 m S 610 760 910 pF VGS=0V, VDS=15V, f=1MHz 88 125 160 pF 40 70 100 pF VGS=0V, VDS=0V, f=1MHz 0.8 1.6 2.4 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 11 14 17 nC Qg(4.5V) Total Gate Charge 5 6.6 8 nC 1.9 2.4 2.9 nC 1.8 3 4.2 nC 1.9 2.4 2.9 nC 1.8 3 4.2 nC Qgs Gate Source Charge Qgd Gate Drain Charge VGS=10V, VDS=15V, ID=12A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=12A, dI/dt=500A/s 5.6 7 8 Qrr Body Diode Reverse Recovery Charge IF=12A, dI/dt=500A/s 6.4 8 9.6 VGS=4.5V, VDS=15V, ID=12A VGS=10V, VDS=15V, RL=1.25, RGEN=3 4.4 ns 9 ns 17 ns 6 ns ns nC A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initialTJ=25C. D. The RJA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.3.0: February 2014 www.aosmd.com Page 2 of 6 AO4406A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 30 6V 10V VDS=5V 5V 80 25 7V 20 4.5V ID(A) ID (A) 60 4V 15 40 10 125C 3.5V 20 5 VGS=3V 0 0 1 2 3 4 25C 0 1 5 18 2 2.5 3 3.5 4 Normalized On-Resistance 1.8 16 RDS(ON) (m ) 1.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 14 12 10 VGS=10V 8 VGS=10V ID=12A 1.6 1.4 17 5 2 VGS=4.5V 10 1.2 ID=10A 1 0.8 6 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 30 1.0E+02 ID=12A 1.0E+01 25 40 1.0E+00 125C IS (A) RDS(ON) (m ) 20 15 10 1.0E-01 125C 1.0E-02 25C 1.0E-03 25C 5 1.0E-04 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.3.0: February 2014 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AO4406A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1200 VDS=15V ID=12A 1000 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 800 600 400 Coss 200 0 Crss 0 0 3 6 9 12 Qg (nC) Figure 7: Gate-Charge Characteristics 15 0 100 30 1000.0 TA=25C IAR (A) Peak Avalanche Current 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics TA=100C 100.0 10s ID (Amps) TA=150C 10 TA=125C RDS(ON) limited 10.0 100s 1ms 10ms 100ms 10s 1.0 TJ(Max)=150C TA=25C 0.1 DC 0.0 1 1 0.01 10 100 1000 Time in avalanche, tA ( s) Figure 9: Single Pulse Avalanche capability (Note C) 0.1 1 VDS (Volts) 10 100 Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 1000 TA=25C Power (W) 100 10 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) Rev.3.0: February 2014 www.aosmd.com Page 4 of 6 AO4406A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Z JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RJA=75C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) Rev.3.0: February 2014 www.aosmd.com Page 5 of 6 AO4406A Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev.3.0: February 2014 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6