FDB0170N607L - FAIRCHILD SEMICONDUCTOR

To learn more about ON Semiconductor, please visit our website at

www.onsemi.com

Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers

will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor

product management systems do not have the ability to manage part nomenclature that utilizes an underscore

(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain

device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated

device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please

email any questions regarding the system integration to Fairchild_questions@onsemi.com.

Is Now Part of

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number

of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right

to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and speciﬁcally disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON

Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON

Semiconductor data sheets and/or speciﬁcations can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s

technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA

Class 3 medical devices or medical devices with a same or similar classiﬁcation in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended

or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its ofﬁcers, employees, subsidiaries, afﬁliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out

of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor

is an Equal Opportunity/Afﬁrmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

December 2015

FDB0170N607L Rev.C

www.fairchildsemi.com

1

FDB0170N607L N-Channel PowerTrench® MOSFET

FDB0170N607L

N-Channel PowerTrench® MOSFET

60 V, 300 A, 1.4 mΩ

Features

Max rDS(on) = 1.4 mΩ at VGS = 10 V, ID = 39 A

Fast Switching Speed

Low Gate Charge

High Performance Trench Technology for Extremely Low

RDS(on)

High Power and Current Handling Capability

RoHS Compliant

General Description

This N-Channel MOSFET is produced using Fairchild

Semiconductor’s advance PowerTrench® process that has

been especially tailored to minimize the on-state resistance

while maintaining superior ruggedness and switching

performance for industrial applications.

Applications

Industrial Motor Drive

Industrial Power Supply

Industrial Automation

Battery Operated tools

Battery Protection

Solar Inverters

UPS and Energy Inverters

Energy Storage

Load Switch

D(Pin4, tab)

G

S(Pin2,3,5,6,7)

(Pin1)

123

4

567

1. Gate

2. Source/Kelvin Sense

3. Source/Kelvin Sense

4. Drain

5. Source

6. Source

7. Source

D2-PAK

(TO263)

MOSFET Maximum Ratings TC = 25 °C unless otherwise noted.

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

VDS Drain to Source Voltage 60 V

VGS Gate to Source Voltage ±20 V

ID

Drain Current -Continuous TC = 25°C (Note 5) 300

A -Continuous TC = 100°C (Note 5) 210

-Pulsed (Note 4) 1620

EAS Single Pulse Avalanche Energy (Note 3) 1109 mJ

PD

Power Dissipation TC = 25°C 250 W

Power Dissipation TA = 25°C (Note 1a) 3.8

TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 °C

RθJC Thermal Resistance, Junction to Case (Note 1) 0.6 °C/W

RθJA Thermal Resistance, Junction to Ambient (Note 1a) 40

Device Marking Device Package Reel Size Tape Width Quantity

FDB0170N607L FDB0170N607L D2-PAK-7L 330mm 24mm 800 units

www.fairchildsemi.com

2

FDB0170N607L Rev.C

FDB0170N607L N-Channel PowerTrench® MOSFET

Electrical Characteristics TJ = 25 °C unless otherwise noted.

Off Characteristics

On Characteristics (Note 2)

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Symbol Parameter Test Conditions Min. Typ. Max. Units

BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 60 V

ΔBVDSS

ΔTJ

Breakdown Voltage Temperature

Coefficient ID = 250 μA, referenced to 25 °C 13 mV/°C

IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1 μA

IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA

VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA234V

ΔVGS(th)

ΔTJ

Gate to Source Threshold Voltage

Temperature Coefficient ID = 250 μA, referenced to 25 °C -13 mV/°C

rDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 39 A 1.1 1.4 mΩ

VGS = 10 V, ID = 39 A, TJ= 150°C 1.9 3.5

gFS Forward Transconductance VDS = 10 V, ID = 39 A 159 S

Ciss Input Capacitance VDS = 30 V, VGS = 0 V,

f = 1 MHz

13750 19250 pF

Coss Output Capacitance 3235 4530 pF

Crss Reverse Transfer Capacitance 240 340 pF

RgGate Resistance 2.5 Ω

td(on) Turn-On Delay Time

VDD = 30 V, ID = 39 A,

VGS = 10 V, RGEN = 6 Ω

61 97 ns

trRise Time 64 103 ns

td(off) Turn-Off Delay Time 83 133 ns

tfFall Time 37 60 ns

QgTotal Gate Charge VGS = 0 V to 10 V

VDD = 30 V,

ID = 39 A

173 243 nC

QgTotal Gate Charge VGS = 0 V to 5 V 89 125

Qgs Gate to Source Gate Charge 61 nC

Qgd Gate to Drain “Miller” Charge 26 nC

ISMaximum Continuous Drain to Source Diode Forward Current 300 A

ISM Maximum Pulsed Drain to Source Diode Forward Current 1620 A

VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 39 A (Note 2) 0.8 1.2 V

trr Reverse Recovery Time IF = 39 A, di/dt = 100 A/μs 90 144 ns

Qrr Reverse Recovery Charge 95 152 nC

Notes:

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.

RθJC is guaranteed by design while RθCA is determined by the user's board design.

a) 40 °C/W when mounted on a 1 in2 pad of 2 oz copper.

b) 62.5 °C/W when mounted on a minimum pad of 2 oz copper.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.

3. EAS of 1109 is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 86 A, VDD = 10V, VGS = 54 V. 100% test at L =0.1 mH, IAS = 124 A.

4. Pulsed Id please refer to Figure “Forward Bias Safe Operating Area” for more details.

5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.

www.fairchildsemi.com

3

FDB0170N607L Rev.C

FDB0170N607L N-Channel PowerTrench® MOSFET

Typical Characteristics TJ = 25 °C unless otherwise noted.

Figure 1.

0.00.51.01.5

0

100

200

300

VGS = 7 V

VGS = 6.5 V

VGS = 8 V

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

VGS = 6 V

VGS = 10 V

ID, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

On Region Characteristics Figure 2.

0 100 200 300

0

1

2

3

VGS = 6.5 V

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

ID, DRAIN CURRENT (A)

VGS = 7 V VGS = 8 V

VGS = 6 V

VGS = 10 V

N o r m a l i z e d O n - R e s i s t a n c e

vs. Drain Current and Gate Voltage

F i g u r e 3 . N o r m a l i z e d O n R e s i s t a n c e

-75 -50 -25 0 25 50 75 100 125 150 175

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

ID = 39 A

VGS = 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

TJ, JUNCTION TEMPERATURE (oC)

vs. Junction Temperature

Figure 4.

45678910

0

2

4

6

8

10

TJ = 150 oC

ID = 39 A

TJ = 25 oC

VGS, GATE TO SOURCE VOLTAGE (V)

rDS(on), DRAIN TO

SOURCE ON-RESISTANCE (mΩ)

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

O n- Re si st an ce vs . Ga t e to

Source Voltage

Figure 5. Transfer Characteristics

234567

0

100

200

300

TJ = 175 oC

VDS = 5 V

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

ID, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 6.

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

100

300

TJ = -55 oC

TJ = 25 oC

TJ = 175 oC

VGS = 0 V

IS, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

S ou rc e t o D ra in D i o de

Forward Voltage vs. Source Current

www.fairchildsemi.com

4

FDB0170N607L Rev.C

FDB0170N607L N-Channel PowerTrench® MOSFET

Figure 7.

0 50 100 150 200

0

2

4

6

8

10

ID = 39 A

VDD = 40 V

VDD = 30 V

VGS, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 20 V

Gate Charge Characteristics Figure 8.

0.1 1 10 60

100

1000

10000

50000

f = 1 MHz

VGS = 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

Crss

Coss

Ciss

C a p a c i t a n c e v s . D r a i n

to Source Voltage

F i g u r e 9 . U n c l a m p e d I n d u c t i v e

Switching Capability

0.001 0.01 0.1 1 10 100 1000 10000

1

10

100

1000

TJ = 25 oC

TJ = 150 oC

tAV, TIME IN AVALANCHE (ms)

IAS, AVALANCHE CURRENT (A)

Figure 10.

0.1 1 10 100 500

0.1

1

10

100

1000

5000

100 μs

10 μs

CURVE BENT TO

MEASURED DATA

10 ms

100 ms/DC

1 ms

ID, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS

LIMITED BY rDS(on)

SINGLE PULSE

TJ = MAX RATED

RθJC = 0.6 oC/W

TC = 25 oC

Forward B i a s S a fe

Operating Area

Figure 11.

10-5 10-4 10-3 10-2 10-1 1

102

103

104

105

P(PK), PEAK TRANSIENT POWER (W)

SINGLE PULSE

RθJC = 0.6 oC/W

TC = 25 oC

t, PULSE WIDTH (sec)

Single Pulse Maximum Power Dissipation

Typical Characteristics TJ = 25 °C unless otherwise noted.

www.fairchildsemi.com

5

FDB0170N607L Rev.C

FDB0170N607L N-Channel PowerTrench® MOSFET

Figure 12.

10-5 10-4 10-3 10-2 10-1 1

10-3

10-2

10-1

1

2

SINGLE PULSE

DUTY CYCLE-DESCENDING ORDER

r(t), NORMALIZED EFFECTIVE TRANSIENT

THERMAL RESISTANCE

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

NOTES:

ZθJC(t) = r(t) x RθJC

RθJC = 0.6 oC/W

Duty Cycle, D = t1 / t2

Peak TJ = PDM x ZθJC(t) + TC

PDM

t1

t2

Junction-to-Case Transient Thermal Response Curve

Typical Characteristics TJ = 25 °C unless otherwise noted.

0.95

3.45

10.50

8.40

(

1.27

) 6X

10.20

7.62

1.40

1.20

4.70

4.30

C

15.70

15.10

0.60

0.40

A

B

7.70

MIN

8.78

8.38

10.20

9.70

9.40

9.00

1.40

1.00

1.40

MAX

C

0.90

0.70

0.50

C

1.27

6X

7.62

0.73

0.25

A

M

A

5.20

4.80

0.254

C

2.84

2.44

0.20

MAX

0

-

8°

GAGE PLANE

SEATING PLANE

R0.50

0.20

B

NOTES:

A. PACKAGE CONFORMS TO JEDEC TO-263

VARIATION CB EXCEPT WHERE NOTED.

B. ALL DIMENSIONS ARE IN MILLIMETERS.

C

OUT OF JEDEC STANDARD VALUE.

D. DIMENSION AND TOLERANCE AS PER ASME

Y14.5-1994.

E. DIMENSIONS ARE EXCLUSIVE OF BURRS,

MOLD FLASH AND TIE BAR PROTRUSIONS.

F. LAND PATTERN RECOMMENDATION PER IPC.

TO127P1524X465-8N.

G. DRAWING FILE NAME: TO263A07REV5.

LAND PATTERN RECOMMENDATION

17

1

7

8

DETAIL A

SCALE 2:1

www.onsemi.com

1

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

www.onsemi.com

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor

19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your local

Sales Representative