Laser Diode LNCT22PK01WW Description Package (1) (2) LNCT22PK01WW is a MOCVD fabricated 660 nm and 780 nm band dual wavelength laser diode with multi quantum well structure, adapting open type frame package to reduce the size and weight. (3) Feature Dual wavelength: 661 nm (typ) and 785 nm (typ) High output power: 280 mW (pulse) for Red and 380 mW (pulse) for IR Package : Flat package Operating temperature : Max. +85C Application Pin assignment IR Optical disk drive Sensing Industrial use RED 3 2 1 PIN connection (1) RED-LD Anode (2) Com LD Cathode (3) IR-LD Anode Absolute Maximum Ratings 3) LD RED IR Note) Item Symbol Output power Po Reverse voltage Operating case temperature Vr Tc Output power Po Reverse voltage Operating case temperature Storage temperature Vr Tc Tstg Value 100 280 1.5 10 to +85 200 380 1.5 10 to +85 40 to +85 RED IR Condition CW pulse 1) CW CW/pulse CW pulse 2) CW CW/pulse 1) Pulse width 30 ns, duty 33% for RED-LD 2) Pulse width 100 ns, duty 50% for IR-LD 3) These ratings are guaranteed only when RED-LD or IR-LD is turned on individually. Electrical and Optical Characteristics LD Unit mW mW V C mW mW V C C Item Threshold current Operating current Operating voltage Wavelength Parallel Beam divergence Perpendicular Threshold current Operating current Operating voltage Wavelength Parallel Beam divergence Perpendicular Tc =25C, CW, Po=100mW for RED-LD, 200mW for IR-LD Symbol Ith Iop Vop h v Ith Iop Vop h v Min. 656 7.5 13.0 777 6.0 12.0 Typ. 65 160 2.3 661 9.0 16.0 60 260 2.4 785 7.5 15.0 Max. 95 230 3.0 665 13.0 19.5 95 380 3.2 791 11.5 19.0 Unit mA mA V nm deg deg mA mA V nm deg deg Condition FWHM FWHM FWHM FWHM FWHM : Full width at half maximum Publication date: September 2013 Ver. BEK Page 1 of 8 Laser Diode LNCT22PK01WW Representative Characteristics [RED-LD] Voltage vs Current (CW) Output Power vs Current (CW) 25 45 65 85 120 5 4 80 Voltage [V] Output Power [mW] 100 60 3 25 45 65 85 2 40 1 20 0 0 0 100 200 300 Current [mA] 400 0 500 Output Power vs Current (Pulse) 200 300 Current [mA] 400 500 Voltage vs Current (Pulse) 25 45 65 85 350 100 5 300 25 45 65 85 Voltage [V] Output Power [mW] 4 250 200 150 3 2 100 1 50 0 0 0 200 400 Current [mA] 600 800 0 200 400 600 800 Current [mA] Ver. BEK Page 2 of 8 Laser Diode LNCT22PK01WW Representative Characteristics [RED-LD] Beam Divergence Parallel to the Junction (CW) Beam Divergence Perpendicular to the Junction (CW) 1.0 1.0 Po =100mW Po =100mW 0.8 Intensity [ a.u.] Intensity [ a.u.] 0.8 0.6 0.4 0.6 0.4 0.2 0.2 0.0 0.0 -30 -20 -10 0 10 20 30 -30 -20 -10 Angle [deg] Beam Divergence of parallel to the junction vs Output Power (CW) Beam Divergence of Perpendicular to the junction [deg Beam Divergence Parallel to the Junction [deg 12 11 25 9 85 8 7 0 20 40 10 20 30 Beam Divergence of Perpendicular to the junction vs Output Power (CW) 13 10 0 Angle [deg] 60 80 100 19 18 17 16 25 15 85 14 13 0 Output Power [mW] 20 40 60 80 100 Output Power [mW] Wavelength vs Temperature (CW) Wavelength [nm] 680 675 100mW 670 5mW 665 660 655 25 45 65 85 Temparature [] Ver. BEK Page 3 of 8 Laser Diode LNCT22PK01WW Representative Characteristics [IR-LD] Output Power vs Current (CW) Voltage vs Current (CW) 25 45 65 85 250 5 4 Voltage [V] Output Power [mW] 200 150 100 25 45 65 85 3 2 1 50 0 0 0 100 200 300 Current [mA] 400 0 500 Output Power vs Current (Pulse) 100 200 300 Current [mA] 400 500 Voltage vs Current (Pulse) 25 45 65 85 400 5 4 300 25 45 65 85 250 Voltage [V] Output Power [mW] 350 200 150 3 2 100 1 50 0 0 0 200 400 Current [mA] 600 800 Ver. BEK 0 200 400 Current [mA] 600 800 Page 4 of 8 Laser Diode LNCT22PK01WW Representative Characteristics [IR-LD] Beam Divergence Perpendicular to the Junction (CW) Beam Divergence Parallel to the Junction (CW) 1.0 1.0 Po =200mW Po =200mW 0.8 Intensity [ a.u.] 0.6 0.4 0.4 0.0 0.0 -30 -20 -10 0 10 20 -30 30 -10 0 10 20 Angle [deg] Beam Divergence of parallel to the junction vs Output Power (CW) Beam Divergence of Perpendicular to the junction vs Output Power (CW) Beam Divergence of Perpendicular to the junction [deg 11 10 85 9 8 25 7 6 5 0 -20 Angle [deg] 12 Beam Divergence Parallel to the Junction [deg 0.6 0.2 0.2 50 100 150 30 19 18 17 85 16 25 15 14 13 0 200 50 100 150 200 Output Power [mW] Output Power [mW] Wavelength vs Temperature (CW) 810 805 Wavelength [nm] Intensity [ a.u.] 0.8 200mW 800 5mW 795 790 785 780 775 770 25 45 65 85 Temparature [] Ver. BEK Page 5 of 8 Laser Diode LNCT22PK01WW Package Dimensions Unit: mm (1) 3.550.05 2.9 2.35 0.1 1.850.1 2.15 0.05 Distance from plane-X 1.720.08 0.45 Distance from plane-Y 0. 13 (3) 0.40.05 Reference plane Y (0.3) 3.10.2 0.45 1.20.2 (1) 0.150.05 0.5 0.05 RED E.P. 0.. 65 IR E.P. 1.2 MAX 3.25 0. 23 Emitter spacing0.110.001 1.09MIN A 0.650.05 (2) Reference plane X (3) Distance from plane-Z Reference plane Z (4) 1.30 (5) 30.55 0.40 +0.05 -0.10 0.40.05 3.50MAX (1) LD Chip (2) Submount (3) Package (4) Ag Paste (5) Au Wire E.P. = Emitting point General corner R is 0.25mm Ver. BEK Page 6 of 8 Laser Diode LNCT22PK01WW Ver. BEK Page 7 of 8 Laser Diode LNCT22PK01WW Cautions Laser class This product is ranked in class IIIb laser according to IEC60825-1 and JIS standard 6802 "Laser Product Emission Safety Standards", so that safety protection is necessary when laser beam is radiated. Flat package laser diode (FLD) This product is adopting open type plastic package for the reduction of size and weight, so please take care of dust and touching laser diode with tweezers. Prevention of Electrostatic discharge (ESD) and surge stress Semiconductor laser diode is sensitive device to ESD and surge, so that sufficient cautions are needed. If electric pulses that may cause emission are inputted, the laser itself will be damaged by light intensity and will bring the laser diode degradation in a short time. Therefore, taking all possible measures against ESD and surge for FLD usage is strongly requested. Heat sink design If case temperature becomes higher, the life of semiconductor laser diode becomes shorter. So it is important that design for heat radiation is appropriated. Especially it is effective to make the heat radiation from metal moiety of the package back side, locating under the submount and laser diode. Precaution at soldering When soldering, please give attention to the mechanical stress and the temperature because of using Ag paste. Temperature of die-pad portion should be less than 200. It is recommended to radiate heat by putting heat sink on the package. Soldering temperature and time Temperature Less than 360C FLD only Less than 380C FLD with holder for heat radiation Time Within 5sec (Recommend within 3sec) Ver. BEK Page 8 of 8 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. 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