Rev.2.00 May 10, 2005 page 1 of 5
HRB0103B
Silicon Schottky Barrier Diode for Low Voltage High Speed
Switching , Rectifying REJ03G0617-0200
(Previous : AD E- 208-4 91A)
Rev.2.00
May 10, 2005
Features
• Low forward voltage drop and suitable for high efficiency forward current.
• CMPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
Laser Mark
Package Name Package Code
(Previous Code)
HRB0103B E2 CMPAK PTSP0003ZB-A
(CMPAK)
Pin Arrangement
21
3
1. Cathode
2. Anode
3. Cathode
Anode(Top View)
HRB0103B
Rev.2.00 May 10, 2005 page 2 of 5
Absolute Maximum Ratings *1
(Ta = 25°C)
Item Symbol Value Unit
Repetitive peak reverse voltage VRRM 30 V
Average rectified current IO*2 100 mA
Non-Repetitive peak forward surge current IFSM *3 3 A
Junction temperature Tj 125 °C
Storage temperature Tstg −55 to +125 °C
Notes: 1. Per one device.
2. See Fig.5, Two device total.
3. 10 ms sine wave 1 pulse.
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Forward voltage VF — — 0.44 V IF = 100 mA
Reverse current IR — — 50 µA VR = 30 V
HRB0103B
Rev.2.00 May 10, 2005 page 3 of 5
Main Characteristic
0 102030405000.10.20.30.40.5
0
0.04
0.02
0.06
0.05
0.03
0.01
0 12040 8020 60 100
0.07
D=1/6
Unit: mm
20h×15w×0.8t
0.8
1.5
2.0
3.0
0.08
sin wave
D=1/3
D=1/2
DC
0
0.04
0.02
0.06
0.05
0.03
0.01
03010 2051525
0.07
D=1/2
Unit: mm
20h×15w×0.8t
0.8
1.5
2.0
3.0
0.08
sin wave
D=5/6
D=2/3
DC
Pulse test Pulse test
Forward power dissipation Pd (W)
VR is two device total
Forward voltage V
F
(V)
Fig.1 Forward current vs. Forward voltage
10
–3
10
–2
10
–5
10
–4
10
–7
10
–6
10
–9
10
–8
10
–3
10
–2
10
–5
10
–4
10
–7
10
–6
Reverse voltage V
R
(V)
Fig.2 Reverse current vs. Reverse voltage
Reverse power dissipation Pd (W)
Fig4. Forward power dissipation vs. Peak reverse voltage
Peak reverse voltage V
RM
(V)
Fig3. Forward power dissipation vs. Average rectified current
Average rectified current Io (mA)
Reverse current I
R
(A)
Forward current I
F
(A)
tp
T
0Io
D = tp
T
tp
T
VR
0
D = tp
T
HRB0103B
Rev.2.00 May 10, 2005 page 4 of 5
015050 10025 75 125
0
80
40
120
100
60
20
DC
D=1/6
D=1/3
sin wave
D=1/2
Unit: mm
20hx15wx0.8t
0.8
1.5
1.5
3.0
1.5
Ambient temperature Ta (°C)
Fig.5 Average rectified current vs. Ambient temperature
tp
T
0Io
D = tp
T
VR = 30V
Average rectified current IO (mA)
Two device total
HRB0103B
Rev.2.00 May 10, 2005 page 5 of 5
Package Dimensions
Pattern of terminal position areas
e
e
1
l
1
b
2
D
AA b
EH
E
e
A
2
A
A
1
Qc
L
A0.8-1.1
A
1
0-0.1
A
2
0.8 0.9 1.0
b 0.25 0.3 0.4
c 0.1 0.16 0.26
D1.82.02.2
E 1.15 1.25 1.35
-0.65-
e
H
E
1.8 2.1 2.4
L 0.425--
b
2
- - 0.45
-1.5-
e
1
l
1
--0.9
Q-0.2-
Dimension in Millimeters
Min Nom Max
Reference
Symbol
SC-70 0.006g
MASS[Typ.]
CMPAK / CMPAKVPTSP0003ZB-A
RENESAS CodeJEITA Package Code Previous Code
b
c
A — A Section
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