Mega Power
Dual IGBTMOD™
1000 Amperes/1700 Volts
CM1000DUC-34NF
107/11 Rev. 2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
Outline Drawing and Circuit Diagram
A
D
P
(8 PLACES) L
L
M
H H HHH H
K
G
UH H
E
F
F
E2
C2
C2E1
C1
G2 E1
E2 G1
C1
V
BB
CC
B
C
J
J
G G R (9 PLACES)
C2E1
E2
G2
E2
E1
G1
C2
LABEL
U
W
S
N
X
YZ
AA
C1
C1
T
Description:
Powerex Mega Power Dual (MPD)
Modules are designed for use in
switching applications. Each
module consists of two IGBT
Transistors having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Features:
£ Low Drive Power
£ Low VCE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heatsinking
£ RoHS Compliant
Applications:
£ High Power DC Power Supply
£ Large DC Motor Drives
£ Utility Interface Inverters
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM1000DUC-24NF
is a 1700V (VCES), 1000 Ampere
Dual IGBTMOD Power
Module.
Current Rating VCES
Type Amperes Volts (x 50)
CM 1000 34
Dimensions Inches Millimeters
M 0.075±0.008 1.9±0.2
N 0.47 12.0
P 0.26 6.5
R M6 Metric M6
S 0.08 2.0
T 0.99 25.1
U 0.62 15.7
V 0.71 18.0
W 0.75 19.0
X 0.43 11.0
Y 0.83 21.0
Z 0.41 10.5
AA 0.22 5.5
Dimensions Inches Millimeters
A 5.91 150.0
B 5.10 129.5
C 1.67±0.01 42.5±0.25
D 5.41±0.01 137.5±0.25
E 6.54 166.0
F 2.91±0.01 74.0±0.25
G 1.65 42.0
H 0.55 14.0
J 1.50±0.01 38.0±0.25
K 0.16 4.0
L 1.36 +0.04/-0.02 34.6 +1.0/-0.5
Housing Type (J.S.T. MFG. CO. LTD)
BB = VHR-2N
CC = VHR-5N
CM1000DUC-34NF
Mega Power Dual IGBTMOD™
1000 Amperes/1700 Volts
207/11 Rev. 2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
Absolute Maximum Ratings, Tj = 25°C unless otherwise specied
Ratings Symbol CM1000DUC-34NF Units
Junction Temperature Tj -40 to 150 °C
Storage Temperature Tstg*7 -40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 1700 Volts
Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts
Collector Current DC (TC = 104°C)*2 IC 1000 Amperes
Peak Collector Current (Pulse, Repetitive)*3 ICRM 2000 Amperes
Total Power Dissipation (TC = 25°C)*2,*4 Ptot 8925 Watts
Emitter Current, FWDi (TC = 25°C)*2,*4 IE*1 1000 Amperes
Peak Emitter Current, FWDi (Pulse, Repetitive)*3 IERM*1 2000 Amperes
Main terminals Mounting Torque, M6 Screw – 40 in-lb (max.)
Mounting to Heatsink Mounting Torque, M6 Screw – 40 in-lb (max.)
Weight (Typical) – 1450 Grams
Flatness to Baseplate (On Centerline X, Y1, Y2)*8 ec -50 to 100 µm
Isolation Voltage (Main Terminal to Baseplate, RMS, f = 60Hz,AC 1 min.) Viso 3500 Volts
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*2 Case temperature (TC) and heatsink temperature (Ts) measured point is just under the chips.
*3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
*4 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating.
*7 The operation temperature is restrained by the permission temperature of female connector housing.
*8 Baseplate flatness measurement point is as in the following figure.
X
BOTTOM
– CONCAVE
+ CONVEX
– CONCAVE
+ CONVEX
BOTTOM
BOTTOM
LABEL SIDE
Y1
39 mm 39 mm
Y2
CM1000DUC-34NF
Mega Power Dual IGBTMOD™
1000 Amperes/1700 Volts
307/11 Rev. 2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
Electrical Characteristics, Tj = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA
Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 5 µA
Gate-Emitter Threshold Voltage VGE(th) IC = 100mA, VCE = 10V 6 7 8 Volts
Collector-Emitter Saturation Voltage (Chip) VCE(sat) IC = 1000A, VGE = 15V, Tj = 25°C*5 – 2.2 2.85 Volts
(Without Lead Resistance) IC = 1000A, VGE = 15V, Tj = 125°C*5 – 2.45 – Volts
Input Capacitance Cies – – 220 nF
Output Capacitance Coes VCE = 10V, VGE = 0V – – 25 nF
Reverse Transfer Capacitance Cres – – 4.7 nF
Total Gate Charge QG VCC = 1000V, IC = 1000A, VGE = 15V – 6000 – nC
Inductive Turn-on Delay Time td(on) VCC = 1000V, IC = 1000A, – – 600 ns
Load Rise Time tr VGE1 = VGE2 = 15V, – – 200 ns
Switch Turn-off Delay Time td(off) RG = 0.47Ω, Inductive Load – – 1000 ns
Times Fall Time tf Switching Operation – – 300 ns
Emitter-Collector Voltage (Chip) VEC*1 IE = 1000A, VGE = 0V*5 – 2.3 3 Volts
(Without Lead resistance)
Reverse Recovery Time trr*1 VCC = 1000V, IE = 1000A, VGE = ±15V, – – 500 ns
Reverse Recovery Charge Qrr*1 RG = 0.47Ω, Inductive Load – 90 – µC
Turn-on Switching Energy Per Pulse Eon VCC = 1000V, IC = IE = 1000A, – 272.4 – mJ
Turn-off Switching Energy Per Pulse Eoff VGE = 15V, RG = 0.47Ω, – 250.2 – mJ
Reverse Recovery Energy Per Pulse Err*1 Tj = 125°C, Inductive Load – 172.4 – mJ
Internal Lead Resistance R(lead) Main Terminals-Chip, Per Switch, – 0.286 – mΩ
Tj = 25°C*2
Internal Gate Resistance rg Per Switch – 0.67 – Ω
Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case*2 Rth(j-c)Q Per IGBT – – 0.014 °C/W
Thermal Resistance, Junction to Case*2 Rth(j-c)D Per Clamp Diode – – 0.023 °C/W
Contact Thermal Resistance, Rth(c-f) Per 1/2 Module – 0.012 – °C/W
Case to Heatsink*2 Thermal Grease Applied*6
Recommended Operating Conditions, Ta = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
DC Supply Voltage Rth(j-c)Q VCC Applied Across C1-E2 – 1000 1100 Volts
Gate (-Emitter Drive) Voltage VGE(on) Applied Across G1-Es1/G2-Es2 13.5 15.0 16.5 Volts
External Gate Resistance RG Per Switch 0.47 – 4.7 Ω
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*2 Case temperature (TC) and heatsink temperature (Ts) measured point is just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*6 Typical value is measured by using thermally conductive grease of λ = 0.9 W/(m•K).
CM1000DUC-34NF
Mega Power Dual IGBTMOD™
1000 Amperes/1700 Volts
407/11 Rev. 2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
CAPACITANCE, Cies, Coes, Cres, (nF)
CAPACITANCE VS. VCE
(TYPICAL)
100102
103
102
101
10-1
100
101
0.5 1.5 1.0 3.02.0 2.5 3.5
102
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
103
104
EMITTER CURRENT, IE, (AMPERES)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
6 8 10 12 14 16 18 20
8
6
4
2
0
Tj = 25°C
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
4
3
0 400
2
1
02000800 1200 1600
VGE = 15V
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
VGE = 0V
Cies
Coes
Cres
IC = 1000A
IC = 2000A
IC = 400A
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0 2 4 6 8 10
VGE = 20V
10
11
12
15 13
9
Tj = 25°C
0
1200
800
400
1600
2000
10-1
COLLECTOR CURRENT, IC, (AMPERES)
104
103
102103
102
101
104
103
102
101
SWITCHING TIME, (ns)
td(off)
td(on)
tr
VCC = 1000V
VGE = ±15V
RG = 0.47Ω
Tj = 125°C
Inductive Load
tf
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY TIME, trr, (ns)
104
102103
103
102
104
103
102
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
trr
Irr
VCC = 1000V
VGE = ±15V
RG = 0.47Ω
Tj = 25°C
Inductive Load
104
104
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
EXTERNAL GATE RESISTANCE, RG, (Ω)
10-1 100
SWITCHING TIME, (ns)
td(off)
td(on)
tr
VCC = 1000V
VGE = ±15V
IC = 1000A
Tj = 125°C
Inductive Load
tf
101
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
GATE CHARGE, QG, (nC)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
20
0
16
12
8
4
0
2000 10000800060004000
VCC = 1000V
VCC = 800V
IC = 1000A
Tj = 25°C
GATE CHARGE, VGE
CM1000DUC-34NF
Mega Power Dual IGBTMOD™
1000 Amperes/1700 Volts
507/11 Rev. 2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
EMITTER CURRENT, IE, (AMPERES)
10-1 10010110-1 100101
VCC = 1000V
VGE = ±15V
Tj = 125°C
RG = 0.47Ω
Inductive Load
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING LOSS, Eon, Eoff, (mJ/PULSE)
102103104
101
102
103
102103104
101
102
103
101
102
104
103
101
102
104
103
VCC = 1000V
VGE = ±15V
Tj = 125°C
RG = 0.47Ω
Eon
Eoff
Inductive Load
GATE RESISTANCE, RG, (Ω)
VCC = 1000V
VGE = ±15V
Tj = 125°C
IC = 1000A
Inductive Load
GATE RESISTANCE, RG, (Ω)
SWITCHING LOSS, Eon, Eoff, (mJ/PULSE)
VCC = 1000V
VGE = ±15V
Tj = 125°C
IC = 1000A
Eon
Eoff
Inductive Load
SWITCHING LOSS, Err, (mJ/PULSE)
REVERSE RECOVERY ENERGY VS.
FORWARD CURRENT
(TYPICAL)
SWITCHING LOSS VS. COLLECTOR CURRENT
(TYPICAL)
SWITCHING LOSS, Err, (mJ/PULSE)
REVERSE RECOVERY ENERGY VS.
EXTERNAL GATE RESISTANCE
(TYPICAL)
SWITCHING ENERGY VS.
EXTERNAL GATE RESISTANCE
(TYPICAL)
TIME, (s)
10-5 10-4 10-3
10-1
10-2
10-3
10-3 10-2 10-1 100101
Zth = Rth • (NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & CLAMP DIODE)
100
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
Single Pulse
TC = 25°C
Per Unit Base
Rth(j-c') =
0.014°C/W
(IGBT)
Rth(j-c') =
0.023°C/W
(Clamp)