DMN2400UFDQ-7 - DIODES INC - Product.Network

DMN2400UFDQ

Document number: DS37853 Rev. 4 - 2

1 of 6

www.diodes.com

February 2018

DMN2400UFDQ

NEW PROD UCT

ADVA N C ED I N F ORM ATI O N

Gate Protection

Diode

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

BVDSS

RDS(ON)

TA = +25°C

20V

0.6Ω @ VGS = 4.5V

0.9A

0.8Ω @ VGS = 2.5V

0.7A

1.0Ω @ VGS = 1.8V

0.5A

1.6Ω @ VGS = 1.5V

0.3A

Features and Benefits

 Low On-Resistance

 Very Low Gate Threshold Voltage, 1.0V Max.

 Low Input Capacitance

 Fast Switching Speed

 ESD Protected Gate

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

 PPAP Capable (Note 4)

Description and Applications

This MOSFET is designed to minimize the on-state resistance

(RDS(ON)) and yet maintain superior switching performance, making it

ideal for high-efficiency power management applications.

 Power Management Functions

 Battery Operated Systems and Solid-State Relays

 Load Switch

Mechanical Data

 Case: U-DFN1212-3 (Type C)

 Case Material: Molded Plastic;

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish – NiPdAu over Copper Leadframe;

Solderable per MIL-STD-202, Method 208

 Terminal Connections: See Diagram

 Weight: 0.005 grams (Approximate)

Ordering Information (Note 5)

Part Number

Case

Packaging

DMN2400UFDQ-7

U-DFN1212-3 (Type C)

3,000/Tape & Reel

DMN2400UFDQ-13

U-DFN1212-3 (Type C)

10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and

Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/.

5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

Marking Information

Date Code Key

Year

2015

2016

2017

2018

2019

2020

2021

2022

2023

2024

2025

Code

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

Top View

Bottom View

Equivalent Circuit

ESD PROTECTED

K24 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: F = 2018)

M = Month (ex: 9 = September)

Pin-Out Top View

U-DFN1212-3 (Type C)

K24

pin 1

DMN2400UFDQ

Document number: DS37853 Rev. 4 - 2

2 of 6

www.diodes.com

February 2018

DMN2400UFDQ

NEW PROD UCT

ADVA N C ED I N F ORM ATI O N

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±12

Continuous Drain Current (Note 7) VGS = 4.5V

Steady

State

TA = +25°C

TA = +70°C

0.9

0.7

Continuous Drain Current (Note 7) VGS = 2.5V

Steady

State

TA = +25°C

TA = +70°C

0.7

0.5

Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)

IDM

3.0

Maximum Body Diode Forward Current (Note 7)

0.8

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 6)

0.44

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RJA

283

°C/W

Total Power Dissipation (Note 7)

0.85

Thermal Resistance, Junction to Ambient (Note 7)

Steady State

RJA

147

°C/W

Thermal Resistance, Junction to Case (Note 7)

RJc

112

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current TJ = +25°C

IDSS

100

VDS = 4.5V, VGS = 0V

VDS = 20V, VGS = 0V

Gate-Source Leakage

IGSS

±1.0

µA

VGS = ±4.5V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(TH)

0.45

1.0

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

0.35

0.6

Ω

VGS = 4.5V, ID = 200mA

0.45

0.8

VGS = 2.5V, ID = 200mA

0.6

1.0

VGS = 1.8V, ID = 100mA

0.7

1.6

VGS = 1.5V, ID = 50mA

Forward Transfer Admittance

|Yfs|

1.4

VDS = 3V, ID = 200mA

Diode Forward Voltage

VSD

0.7

1.2

VGS = 0V, IS = 500mA

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss

37.0

VDS =16V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

5.7

Reverse Transfer Capacitance

Crss

4.2

Gate Resistance

Ω

VDS = 0V, VGS = 0V, f = 1.0MHz

Total Gate Charge

0.5

VGS = 4.5V, VDS = 10V,

ID = 250mA

Gate-Source Charge

Qgs

0.07

Gate-Drain Charge

Qgd

0.1

Turn-On Delay Time

tD(ON)

4.06

VDD = 10V, VGS = 4.5V,

RL = 47Ω, RG = 10Ω,

ID = 200mA

Turn-On Rise Time

7.28

Turn-Off Delay Time

tD(OFF)

13.74

Turn-Off Fall Time

10.54

Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1-inch square copper plate.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to production testing.

DMN2400UFDQ

Document number: DS37853 Rev. 4 - 2

3 of 6

www.diodes.com

February 2018

DMN2400UFDQ

NEW PROD UCT

ADVA N C ED I N F ORM ATI O N

0.5

1.0

1.5

2.0

0 1 2 3 4 5

Fig. 1 Typical Output Characteristics

V , DRAIN-SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

V = 1.5V

V = 2.0V

V = 2.5V

V = 4.5V

V = 1.2V

V = 1.8V

0.4

0.8

1.2

1.6

2.0

0 0.4 0.8 1.2 1.6 2

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

I , DRAIN-SOURCE CURRENT (A)

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON) 

V = 1.8V

V = 4.5V

V = 2.5V

V = 1.5V

V = 5.0V

Fig. 5 On-Resistance Variation with Temperature

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE (

癈

)

0.6

0.8

1.0

1.2

1.4

1.6

R , DRAIN-SOURCE

ON-RESISTANCE (NORMALIZED)

DS(ON)

V = 2.5.V

I = 500mA

V = 4.5V

I = 1.0A

0.2

0.4

0.6

0.8

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON) 

Fig. 6 On-Resistance Variation with Temperature

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE (

癈

)

V = 4.5V

I = 1.0A

V = 2.5V

I = 500mA

0.5

1.0

1.5

0.5

1.5

2.5

(

)

Fig. 2 Typical Transfer Characteristics

V , GATE SOURCE VOLTAGE (V)

V = 5V

T = -55°C

T = 25°C

T = 125°C

T = 150°C

T = 85°C

ID, DRAIN CURRENT (A)

0.2

0.4

0.6

0.8

0.4

0.8

1.2

1.6

I , DRAIN CURRENT (A)

Fig. 4 Typical Drain-Source On-Resistance

vs. Drain Current and Temperature

(

)

(

)



T = -55°C

T = 25°C

T = 85°C

T = 125°C

T = 150°C

V = 4.5V

RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()

(°C)

VGS = 2.5V

(°C)

DMN2400UFDQ

Document number: DS37853 Rev. 4 - 2

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February 2018

DMN2400UFDQ

NEW PROD UCT

ADVA N C ED I N F ORM ATI O N

0 5 10 15 20

Fig. 9 Typical Capacitance

V , DRAIN-SOURCE VOLTAGE (V)

C, CAPACITANCE (pF)

f = 1MHz

Ciss

Coss

Crss

0 0.1 0.2 0.3 0.4 0.5 0.6

Fig. 11 Gate-Charge Characteristics

Q , TOTAL GATE CHARGE (nC)

V , GATE-SOURCE VOLTAGE (V)

V = 10V

I = 250mA

0.01

0.1

0.1 1 10 100

I , DRAIN CURRENT (A)

V , DRAIN -SOURCE VOLTAGE (V)

Figure 12 Typical Output Characteristics

RDS(on)

Limited

P = 10s

P = 1s

P = 100ms

P = 10ms

WP = 1ms

P = 100µs

0.2

0.4

0.6

0.8

1.0

1.2

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

-50

-25

100

125

150

T , AMBIENT TEMPERATURE (°C)

(

)

(

)

I = 250µA

I = 1mA

VGS(TH), GATE THRESHOLD VOLTAGE (V)

0.4

0.8

1.2

1.6

0.4

0.6

0.8

1.0

1.2

V , SOURCE-DRAIN VOLTAGE (V)

Fig. 8 Diode Forward Voltage vs. Current

0.2

(

)

T = 25°C

IS, SOURCE CURRENT (A)

0.1

100

1,000

Fig. 10 Typical Drain-Source Leakage Current

vs. Drain-Source Voltage

V , DRAIN-SOURCE VOLTAGE (V)

(

)

T = -55°C

T = 85°C

T = 125°C

T = 150°C

T = 25°C

IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA)

TJ(MAX)=150℃

TC=25℃

Single Pulse

DUT on 1*MRP

Board

VGS = 4.5V

Fig. 12 SOA, Safe Operation Area

DMN2400UFDQ

Document number: DS37853 Rev. 4 - 2

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February 2018

DMN2400UFDQ

NEW PROD UC T

ADVA N C ED I N F ORM ATI O N

0.001

0.01

0.1

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

r(t), TRANSIENT THERMAL RESISTANCE

t1, PULSE DURATION TIMES (sec)

Figure 13 Transient Thermal Resistance

D = 0.7

D = 0.5

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

Single Pulse

D = 0.9

R (t) = r(t) * R

 JA JA

R = 283°C/W

JA

Duty Cycle, D = t1/ t2

Package Outline Dimensions

Please see http://www.diodes.com/package-outlines.html for the latest version.

U-DFN1212-3 (Type C)

Seating Plane

U-DFN1212-3

Type C

Dim

Min

Max

Typ

0.47

0.53

0.50

0.05

0.02

0.13

0.27

0.37

0.32

0.17

0.27

0.22

1.15

1.25

1.20

0.75

0.95

0.85

0.80

1.15

1.25

1.20

0.40

0.60

0.50

0.25

0.35

0.30

0.65

0.75

0.70

All Dimensions in mm

DMN2400UFDQ

Document number: DS37853 Rev. 4 - 2

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February 2018

DMN2400UFDQ

NEW PROD UC T

ADVA N C ED I N F ORM ATI O N

Suggested Pad Layout

Please see http://www.diodes.com/package-outlines.html for the latest version.

U-DFN1212-3 (Type C)

Y1 X1

Dimensions

Value

(in mm)

0.800

0.200

0.320

0.520

1.050

0.450

0.250

0.850

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for

use provided in the labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.