AOD2544
General Description Product Summary
V
DS
I
D
(at V
GS
=10V) 23A
R
DS(ON)
(at V
GS
=10V) < 54mΩ
R
DS(ON)
(at V
GS
=4.5V) < 66mΩ
Application
100% UIS Tested
100% Rg Tested
Symbol
V
150
Parameter
Drain-Source Voltage
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
Maximum Units
AOD2544 TO-252 Tape & Reel 2500
150V N-Channel AlphaMOS
Orderable Part Number Package Type Form Minimum Order Quantity
150V
• Latest Trench Power AlphaMOS (αMOS MV) technology
• Very Low R
DS(ON)
• Low Gate Charge
• Optimized for fast-switching applications
• RoHS and Halogen-Free Compliant
• Synchronus Rectification in DC/DC and AC/DC Converters
• Isolated DC/DC Converters in Telecom and Industrial
G
D
S
TO-252
DPAK
Top View Bottom View
G
S
D
G
S
D
V
DS
V
GS
I
DM
I
AS
E
AS
V
DS
Spike V
SPIKE
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJC
Power Dissipation
B
37.5
T
C
=100°C
10µs
P
D
150
180
75
Gate-Source Voltage
Pulsed Drain Current
C
16
Drain-Source Voltage
Continuous Drain
Current
Maximum Junction-to-Case °C/W
°C/W
Maximum Junction-to-Ambient
A D
1.6 50
2.0
V
A
±20
V
W
I
D
V
A15
A
45
I
DSM
5.0
mJ34
6.5
23
Maximum Junction-to-Ambient
A
°C/W
R
θJA
15
40 20
Thermal Characteristics
Parameter Max
T
A
=70°C 4.0 °C
Units
Junction and Storage Temperature Range -55 to 175
Typ
P
DSM
W
T
A
=25°C 6.2
Power Dissipation
A
T
A
=25°C
T
A
=70°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
Avalanche Current
C
Continuous Drain
Current
Avalanche energy L=0.3mH
C
Rev.1.0: October 2013
www.aosmd.com Page 1 of 6
Symbol Min Typ Max Units
BV
DSS
150 V
V
DS
=150V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage 1.7 2.15 2.7 V
45 54
T
J
=125°C 89 107
52.5 66 mΩ
g
FS
17 S
V
SD
0.72 1 V
I
S
23 A
C
iss
675 pF
C
oss
78 pF
C
rss
4 pF
R
g
1.4 2.9 4.4 Ω
Q
g
(10V)
11.5 20 nC
Q
g
(4.5V)
5.5 10 nC
Q
gs
2 nC
Q
gd
2.5 nC
t
D(on)
6 ns
t
r
3 ns
t
D(off)
20 ns
t
f
5
ns
Reverse Transfer Capacitance V
GS
=0V, V
DS
=75V, f=1MHz
V
DS
=V
GS,
I
D
=250µA
Output Capacitance
Forward Transconductance I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=5A
V
GS
=10V, I
D
=5A
V
DS
=0V, V
GS
=±20V
Maximum Body-Diode Continuous Current
Input Capacitance
Gate-Body leakage current
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=10V, V
DS
=75V, R
L
=15Ω,
R
GEN
=3Ω
Diode Forward Voltage
DYNAMIC PARAMETERS
V
GS
=4.5V, I
D
=2A
Turn-On Rise Time
Gate Source Charge
Gate Drain Charge
Total Gate Charge
SWITCHING PARAMETERS
Turn-On DelayTime
mΩ
V
GS
=10V, V
DS
=75V, I
D
=5A
Total Gate Charge
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Gate resistance f=1MHz
I
DSS
µAZero Gate Voltage Drain Current
Drain-Source Breakdown Voltage I
D
=250µA, V
GS
=0V
R
DS(ON)
Static Drain-Source On-Resistance
t
f
5
ns
t
rr
37 ns
Q
rr
210 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time I
F
=5A, dI/dt=500A/µs
Turn-Off Fall Time
I
F
=5A, dI/dt=500A/µs
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PDis based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev.1.0: October 2013 www.aosmd.com Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
12345
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
20
30
40
50
60
70
80
0 5 10 15
RDS(ON) (mΩ
Ω
Ω
Ω)
I
D
(A)
Figure 3: On
-
Resistance vs. Drain Current and Gate
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
0 25 50 75 100 125 150 175 200
Normalized On-Resistance
Temperature (°C)
Figure 4: On
-
Resistance vs. Junction Temperature
VGS=4.5V
ID=2A
VGS=10V
ID=5A
25°C
125°C
VDS=5V
VGS=4.5V
VGS=10V
0
10
20
30
40
012345
ID(A)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
VGS=3.0V
3.5V
10V
4.5V
4.0V
D
Figure 3: On
-
Resistance vs. Drain Current and Gate
Voltage (Note E)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
Figure 4: On
-
Resistance vs. Junction Temperature
(Note E)
20
40
60
80
100
120
140
2 4 6 8 10
RDS(ON) (mΩ
Ω
Ω
Ω)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
ID=5A
25°C
125°C
Rev.1.0: October 2013 www.aosmd.com Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0 3 6 9 12 15
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
400
800
1200
1600
0 25 50 75 100 125 150
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
0
100
200
300
400
500
0.0001 0.001 0.01 0.1 1 10 100
Power (W)
Pulse Width (s)
Coss
C
rss
VDS=15V
ID=20A
TJ(Max)=175°C
TC=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
0.01 0.1 1 10 100 1000
ID(Amps)
VDS (Volts)
V
> or equal to 4.5V
10µs
1ms
DC
RDS(ON)
limited
TJ(Max)=175°C
TC=25°C
100
µ
s
10ms
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10 100
Zθ
θ
θ
θJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
V
GS
> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
RθJC=2.0°C/W
Rev.1.0: October 2013 www.aosmd.com Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
20
40
60
80
100
0 25 50 75 100 125 150 175
Power Dissipation (W)
TCASE (°
°°
°C)
Figure 12: Power De-rating (Note F)
0
5
10
15
20
25
30
0 25 50 75 100 125 150 175
Current rating ID(A)
TCASE (°
°°
°C)
Figure 13: Current De-rating (Note F)
1
10
100
1000
10000
1E-05 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
TA=25°C
0.001
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
RθJA=50°C/W
Rev.1.0: October 2013 www.aosmd.com Page 5 of 6
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
ton
td(off) t
f
toff
L
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
L
Vgs
Vds
Id
Vgs
BV
I
Ig
Vgs
-
+
VDC
DUT
L
Vds
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
IF
AR
DSS
2
E = 1/2 LI
dI/dt
IRM
rr
Vdd
Vdd
Q = - Idt
AR
AR
t
rr
Rev.1.0: October 2013 www.aosmd.com Page 6 of 6
