DS04-23505-1E m@ DESCRIPTION The Fujitsu MB54501 includes a low-noise amplifier and a mixer, whi telecommunication systems. Using Fujitsus advanced technology, MB54501 achieves an Icc of r front end of mobile m@ FEATURES Amplifier * Supply voltage 3V (typ.) * Current consumption 3mA (typ.) * Input frequency 1.1GHz (max 7 * Gain 14dB (typ.): (typ.)? * Noise figure * 1dB compression point * Input return loss * Output return loss 1: Measured by the circuit: (fin = 878MHz) *2: Measured by the (IF = 90MHz) * 16-pin Plastic Shri nt circuit example. surement circuit example. all Outline Package (Suffix: -PFV) m@ PACKAGE 16-pin Plastic SSOP (FPT-16P-MO05)MB54501 m@ PIN ASSIGNMENT (TOP VIEW) RFout | 1 16 | Lext GND _ 2 15 | | RFin GND | 3 14 | Rext Voc | 4 13 | NC Nc | 5 12 | RE GND P| 6 1 | RE GND P| 7 10 P ] GND MIXin 8 9 MIXout (FPT-16P-MO05) m@ ABSOLUTE MAXIMUM RATINGS Parameters Symbol Value Unit Supply Voltage Vec -0.5 to 7.0 Vv Output Voltage Vo 0.5 to Veco + 0.5 Vv Output Current lo Oto 10 mA Storage Temperature Tsta 55 to +125 C Note: Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.@ EQUIVALENT CIRCUIT MB54501 Vec RFout Main ) Lext Main ) MIXout Bias Bias ; Circuit "O Circuit "o. ) Rext ) RE ~~ Amplifier ______+- ___ Mixer _+ m@ PIN DESCRIPTION Pin No. | Pin Name Description Pin No. | Pin Name Description 1 RFout Amplifier output 9 MlXout | Mixer output 2 GND Ground 10 GND Ground 3 GND Ground 11 RE Emitter of a transistor for mixer 4 Vec Power supply 12 5 NC No connection 13 NC No connection 6 GND Ground 14 Rext Emitter of a transistor for amplifier 7 GND Ground 15 RFin Amplifier input 8 MIXin Mixer input 16 Lext Amplifier load connectionMB54501 m@ RECOMMENDED OPERATING CONDITIONS Value Parameter Symbol Unit Min. Typ. Max. Supply Voltage Veo 2.7 3.0 5.5 Vv Input Voltage Vi GND - Vec Vv Operating Temperature Ta 40 - +85 C Notes: To protect against damage by electrostatic discharge, note the following handling precautions: Store and transport devices in conductive containers. Use properly grounded workstations, tools, and equipment. Turn off power before inserting or removing this device into or from a socket. Protect leads with conductive sheet, when transporting a board mounted device.m@ ELECTRICAL CHARACTERISTICS MB54501 AMPLIFIER (Vcc = +38.0V, Ta = 25C) Parameter Symbol Conditions Target Value Unit Min. Typ. Max. Supply Voltage Voc 2.7 3.0 5.5 Vv Supply Current lec 3.0 mA Operating Frequency fin 878 1100 MHz Gain Gain 14 dB Noise Figure NF 2.2 dB 1dB Compression Point Pia Output -1 dBm Input Return Loss RLin 8 dB Output Return Loss RLout 10 dB Remark: Electrical characteristics depend on external circuits (elements) or status of mounting. The above characteristics are measured by the test circuit in the next page. MIXER (Vcc = +38.0V, Ta = 25C) Target Value Parameter Symbol Conditions Unit Min. Typ. Max. Supply Voltage Voc 2.7 3.0 5.5 Vv Current Consumption lec 3.0 mA Operating Frequency fin 878 1100 MHz Gain Set Amplifier characteristics 9 dB Conversion Gain Ge Mixer 15 dB characteristics Noise Figure NF IF = 9OMHz SSB 5 dB Remark: Electrical characteristics depend on external circuits (elements) or status of mounting. The above characteristics are measured by the test circuit in the next page.MB54501 m@ MEASUREMENT CIRCUIT (EXAMPLE) 2nH 500 100p Measuring ' apparatus 3.9n 1p 1000p Vec = 3V ce t t RF = 878MHz CH SAW | 3p 100p eteit| 5.6n SAW LO = 788MHz RFout GND GND Vee NC GND GND MIXin Lext RFin Rext NC RE RE GND MlXout 16 100p 15H 6.8n 14 ia 13- 12 11 10 150n T 20p T 30p 878MHz Vec = 3V ory T 1000p 1p 1000p ~=s IF = S90OMHz L-> 500 Measuring apparatusMB54501 m@ PACKAGE DIMENSIONS 16pins, Plastic SSOP : This dimension does not include resin protrusion. (FPT-16P-M05) *5.00+0.10(.197+.004) 1,25 540 {049 c0a) [E7]0.10(.004)] HAH HHH INDEX *4.40+0.10 6.4040.20 (.173+.004) (.252+.008) 5.40(.213) NOM O , "A" ar __ . Proccccrcrcrnr rrr 0.65+0.12 0.22 3.08 ~ 0.15 302 Details of "A" part | | (0256+.0047) 2004 So)! (009 tc2) (008s) | 0.10+0.10(.004+.004) | jr Ci ! (STAND OFF) | i 1 L_t Lt L_t Lt L_t Lt LH : | | | | 1 =F o~ 108 | 0,50+0.20 (.020+.008) Cy 4.55(.179)REF Dimensions in mm (inches). 1994 FUJITSU LIMITED F160139-20-4MB54501 FUJITSU LIMITED For further information please contact: Japan FUJITSU LIMITED Corporate Global Business Support Division Electronic Devices KAWASAKI PLANT, 4-1-1, Kamikodanaka Nakahara-ku, Kawasaki-shi Kanagawa 211-8588, Japan Tel: (044) 754-3763 Fax: (044) 754-3329 http //www. fujitsu. co.jp/ North and South America FUJITSU MICROELECTRONICS, INC. Semiconductor Division 3545 North First Street San Jose, CA 95134-1804, USA Tel: (408) 922-9000 Fax: (408) 922-9179 Customer Response Center Mon. - Fri.: 7am - 5 pm (PST) Tel: (800) 866-8608 Fax: (408) 922-9179 http://www. fujitsumicro.com/ Europe FUJITSU MIKROELEKTRONIK GmbH Am Siebenstein 6-10 D-63303 Dreieich-Buchschlag Germany Tel: (06103) 690-0 Fax: (06103) 690-122 http://www. fujitsu-ede.com/ Asia Pacific FUJITSU MICROELECTRONICS ASIA PTE LTD #05-08, 151 Lorong Chuan New Tech Park Singapore 556741 Tel: (65) 281-0770 Fax: (65) 281-0220 http ://www.fmap.com.sg/ F9803 FUJITSU LIMITED Printed in Japan All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. The information and circuit diagrams in this document presented as examples of semiconductor device applications, and are not intended to be incorporated in devices for actual use. Also, FUJITSU is unable to assume responsibility for infringement of any patent rights or other rights of third parties arising from the use of this information or circuit diagrams. FUJITSU semiconductor devices are intended for use in standard applications (computers, office automation and other office equipment, industrial, communications, and measurement equipment, personal or household devices, etc.). CAUTION: Customers considering the use of our products in special applications where failure or abnormal operation may directly affect human lives or cause physical injury or property damage, or where extremely high levels of reliability are demanded (such as aerospace systems, atomic energy controls, sea floor repeaters, vehicle operating controls, medical devices for life support, etc.) are requested to consult with FUJITSU sales representatives before such use. The company will not be responsible for damages arising from such use without prior approval. Any semiconductor devices have inherently a certain rate of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Control Law of Japan, the prior authorization by Japanese government should be required for export of those products from Japan.