January 1995 3
Philips Semiconductors Product specification
Dual 4-input AND gate HEF4082B
gates
AC CHARACTERISTICS
VSS =0V; T
amb =25°C; CL= 50 pF; input transition times ≤20 ns
VDD
VSYMBOL TYP. MAX. TYPICAL EXTRAPOLATION
FORMULA
Propagation delays 5 tPHL; tPLH
65 125 ns 38 ns +(0,55 ns/pF) CL
In→On10 30 60 ns 19 ns +(0,23 ns/pF) CL
15 25 45 ns 17 ns +(0,16 ns/pF) CL
Output transition times 5 tTHL
60 120 ns 10 ns +(1,0 ns/pF) CL
HIGH to LOW 10 30 60 ns 9 ns +(0,42 ns/pF) CL
15 20 40 ns 6 ns +(0,28 ns/pF) CL
5 60 120 ns 10 ns +(1,0 ns/pF) CL
LOW to HIGH 10 tTLH 30 60 ns 9 ns +(0,42 ns/pF) CL
15 20 40 ns 6 ns +(0,28 ns/pF) CL
VDD
VTYPICAL FORMULA FOR P (µW)
Dynamic power 5 1500 fi+∑(foCL) ×VDD 2where
dissipation per 10 6700 fi+∑(foCL) ×VDD 2fi= input freq. (MHz)
package (P) 15 16 800 fi+∑(foCL) ×VDD 2fo= output freq. (MHz)
CL= load capacitance (pF)
∑(foCL) = sum of outputs
VDD = supply voltage (V)