DMN2022UNS-7 - DIODES INC - Product.Network

POWERDI is a registered trademark of Diodes Incorporated.

DMN2022UNS

Document number: DS38050 Rev. 2 - 2

1 of 7

www.diodes.com

November 2015

DMN2022UNS

NEW PROD U C T

D1

G2

S2

G1

S1

Pin 1

D2 D2

D1

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

POWERDI®

Product Summary

V(BR)DSS

RDS(ON) max

ID max

TA = +25°C

20V

10.8m @ VGS = 4.5V

10.7A

14.5m @ VGS = 2.5V

9.3A

17.0m @ VGS = 1.8V

8.6A

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (RDS(ON)) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

Applications

 Power Management Functions

 Load Switch

Features

 Low On-Resistance

 Low Input Capacitance

 Fast Switching Speed

 Low Input/Output Leakage

 Complementary Pair MOSFET

 ESD Protected Up to 2kV

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

Mechanical Data

 Case: POWERDI®3333-8

 Case Material: Molded Plastic, “Green” Molding Compound.

 UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish  Matte Tin Annealed over Copper Leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.0065 grams (Approximate)

Ordering Information (Note 4)

Part Number

Case

Packaging

DMN2022UNS-7

POWERDI®3333-8

2000/Tape & Reel

DMN2022UNS-13

POWERDI®3333-8

3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Internal Schematic

ESD PROTECTED

Bottom View

POWERDI®3333-8

S23 = Product Type Marking Code

YYWW = Date Code Marking

YY = Last Digit of Year (ex: 15 = 2015)

WW = Week Code (01 to 53)

S23

YYWW

D1

S1

G1

Gate Protection

Diode

D2

S2

G2

Gate Protection

Diode

Top View

e3

POWERDI is a registered trademark of Diodes Incorporated.

DMN2022UNS

Document number: DS38050 Rev. 2 - 2

2 of 7

www.diodes.com

November 2015

DMN2022UNS

NEW PROD U C T

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

20

V

Gate-Source Voltage

VGSS

±10

V

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

TA = +25°C

TA = +70°C

ID

10.7

8.6

A

t<10s

TA = +25°C

TA = +70°C

ID

13.9

11.1

A

Maximum Body Diode Forward Current (Note 6)

IS

2

A

Pulsed Drain Current (10s pulse, Duty cycle = 1%)

IDM

60

A

Avalanche Current (Note 7) L = 0.1mH

IAS

A

Avalanche Energy (Note 7) L = 0.1mH

EAS

mJ

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

PD

1.2

W

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RJA

107

°C/W

t<10s

64

Total Power Dissipation (Note 6)

PD

1.9

W

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RJA

67

°C/W

t<10s

40

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

20

—

V

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current TJ = +25°C

IDSS

—

1

µA

VDS = 20V, VGS = 0V

Gate-Source Leakage

IGSS

—

±10

µA

VGS = ±10V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(TH)

0.4

—

1

V

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

—

9.0

10.8

mΩ

VGS = 4.5V, ID = 4A

—

9.2

11.2

VGS = 4.0V, ID = 4A

—

9.8

13.0

VGS = 3.1V, ID = 4A

—

10.5

14.5

VGS = 2.5V, ID = 4A

—

13.9

17.0

VGS = 1.8V, ID = 4A

Diode Forward Voltage

VSD

—

0.7

1.1

V

VGS = 0V, IS = 5A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss

—

1870

—

pF

VDS = 10V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

—

320

—

pF

Reverse Transfer Capacitance

Crss

—

160

—

pF

Gate Resistance

Rg

—

96

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge

Qg

—

20.3

—

nC

VGS = 4.5V, VDS = 10V,

ID = 6.5A

Gate-Source Charge

Qgs

—

2.8

—

nC

Gate-Drain Charge

Qgd

—

3.6

—

nC

Turn-On Delay Time

tD(ON)

—

62

—

ns

VGS = 4.5V, VDS = 10V,

RG = 6Ω, RL = 1.0Ω

Turn-On Rise Time

tR

—

101

—

ns

Turn-Off Delay Time

tD(OFF)

—

596

—

ns

Turn-Off Fall Time

tF

—

224

—

ns

Reverse Recovery Time

tRR

—

150

—

ns

IF = 4A, di/dt = 100A/μs

Reverse Recovery Charge

QRR

—

135

—

nC

IF = 4A, di/dt = 100A/μs

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.

7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C .

8 .Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to production testing.

POWERDI is a registered trademark of Diodes Incorporated.

DMN2022UNS

Document number: DS38050 Rev. 2 - 2

3 of 7

www.diodes.com

November 2015

DMN2022UNS

NEW PROD U C T

0.0

5.0

10.0

15.0

20.0

25.0

30.0

0 0.5 1 1.5 2 2.5 3

ID, DRAIN CURRENT (A)

VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 1. Typical Output Characteristic

VGS = 1.0V

VGS = 1.2V

VGS = 1.5V

VGS = 10.0V

VGS = 4.0V

VGS=3.1V

VGS = 3.7V

VGS = 4.5V

VGS=1.8V

VGS=2.0V

VGS=2.5V

0

0.005

0.01

0.015

0.02

0.025

0 5 10 15 20 25 30

RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)

ID, DRAIN-SOURCE CURRENT (A)

Figure 3. Typical On-Resistance vs. Drain Current and

Gate Voltage

VGS = 4.5V

VGS = 4.0V

VGS = 3.1V

VGS = 2.5V

VGS = 1.8V

0

0.01

0.02

0.03

0.04

0.05

0 2 4 6 8 10

RDS(ON), DRAIN-SOURCE On-RESISTANCE (Ω)

VGS, GATE-SOURCE VOLTAGE (V)

Figure 4. Typical Transfer Characteristic

ID = 4.0A

0

0.005

0.01

0.015

0.02

0 5 10 15 20

RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)

ID, DRAIN CURRENT (A)

Figure 5. Typical On-Resistance vs. Drain Current and

Junction Temperature

-55℃

25℃

85℃

150℃

125℃

VGS = 4.5V

0

0.5

1

1.5

2

2.5

-50 -25 025 50 75 100 125 150

RDS(ON), DRAIN-SOURCE ON-RESISTANCE

(NORMALIZED)

TJ, JUNCTION TEMPERATURE (℃)

Figure 6. On-Resistance Variation with Junction

Temperature

VGS = 4.5V, ID = 4A

VGS = 3.1V, ID = 4A

0

2

4

6

8

10

12

14

16

18

20

0 0.5 1 1.5 2 2.5

ID, DRAIN CURRENT (A)

VGS, GATE-SOURCE VOLTAGE (V)

Figure 2. Typical Transfer Characteristic

VDS = 5V

-55℃

25℃

85℃

125℃

150℃

POWERDI is a registered trademark of Diodes Incorporated.

DMN2022UNS

Document number: DS38050 Rev. 2 - 2

4 of 7

www.diodes.com

November 2015

DMN2022UNS

NEW PROD U C T

0

0.005

0.01

0.015

0.02

0.025

0.03

-50 -25 025 50 75 100 125 150

RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)

TJ, JUNCTION TEMPERATURE (℃)

Figure 7. On-Resistance Variation with Junction

Temperature

VGS = 4.5V, ID = 4A

VGS = 3.1V, ID = 4A

0

5

10

15

20

0 0.3 0.6 0.9 1.2 1.5

IS, SOURCE CURRENT (A)

VSD, SOURCE-DRAIN VOLTAGE (V)

Figure 9. Diode Forward Voltage vs. Current

TJ= 125oCTJ= 85oC

TJ= 25oC

TJ= -55oC

VGS = 0V

TJ= 150oC

0

2

4

6

8

10

0 5 10 15 20 25 30 35 40 45 50

VGS (V)

Qg(nC)

Figure 10. Gate Charge

VDS = 10V, ID = 6.5A

0.01

0.1

1

10

100

0.01 0.1 1 10 100

ID, DRAIN CURRENT (A)

VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 11. SOA, Safe Operation Area

PW=10s

PW=10ms

PW=100µs

DC

RDS(ON) Limited

PW=1ms

PW=100ms

TJ(Max) = 150℃ TC = 25℃

Single Pulse

DUT on 1*MRP Board

VGS= 10V

PW=1s

0

0.2

0.4

0.6

0.8

1

1.2

-50 -25 025 50 75 100 125 150

VGS(TH), GATE THRESHOLD VOLTAGE (V)

TJ, JUNCTION TEMPERATURE (℃)

Figure 8. Gate Threshold Variation vs. Junction

Temperature

ID = 250μA

ID = 1mA

POWERDI is a registered trademark of Diodes Incorporated.

DMN2022UNS

Document number: DS38050 Rev. 2 - 2

5 of 7

www.diodes.com

November 2015

DMN2022UNS

NEW PROD U C T

0.001

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10 100 1000

r(t), TRANSIENT THERMAL RESISTANCE

t1, PULSE DURATION TIME (sec)

Figure 12. Transient Thermal Resistance

RθJA(t) = r(t) * RθJA

RθJA = 114℃/W

Duty Cycle, D = t1 / t2

D=Single Pulse

D=0.005

D=0.01

D=0.02

D=0.05

D=0.1

D=0.3

D=0.5

D=0.9

D=0.7

POWERDI is a registered trademark of Diodes Incorporated.

DMN2022UNS

Document number: DS38050 Rev. 2 - 2

6 of 7

www.diodes.com

November 2015

DMN2022UNS

NEW PROD U C T

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.

POWERDI®3333-8 (Type UXB)

POWERDI®3333-8

(Type UXB)

Dim

Min

Max

Typ

A

0.75

0.85

0.80

A1

0.00

0.05

--

b

0.25

0.40

0.32

c

0.10

0.25

0.15

D

3.20

3.40

3.30

D1

2.95

3.15

3.05

D2

0.10

0.35

0.23

E

3.20

3.40

3.30

E1

2.95

3.15

3.05

E2

0.10

0.30

0.20

e



0.65

L

0.35

0.55

0.45

a

0°

12°

10°

All Dimensions in mm

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

POWERDI®3333-8 (Type UXB)

D

EE1

D1

A

c

L

E2

b

e

D2

A1

a

Dimensions

Value (in mm)

C

0.650

X

0.420

X1

2.370

Y

0.730

Y1

3.500

X1

Y1

Y

CX

Y

POWERDI is a registered trademark of Diodes Incorporated.

DMN2022UNS

Document number: DS38050 Rev. 2 - 2

7 of 7

www.diodes.com

November 2015

DMN2022UNS

NEW PROD U C T

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com