This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev 1.2 /Aug. 2009 1
128MBit MOBILE SDR SDRAMs based on 2M x 4Bank x16 I/O
Specification of
128M (8Mx16bit) Mobile SDRAM
Memory Cell Array
- Organized as 4banks of 2,097,152 x16
Rev 1.2 /Aug. 2009 2
11
128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
Document Title
4Bank x 2M x 16bits Synchronous DRAM
Revision History
Revision No. History Draft Date Remark
0.1 Initial Draft Sep. 2007 Preliminary
0.2 - Define
IDD specification Feb. 2008 Preliminary
1.0
-. Correct
Temp range(p.9 & p.10)
-. Modify
IDD Values(p.11 & p.12)
Jun. 2008
1.1 -. Omit a typo in a package inforamtion Jul. 2009
1.2 -. Modify package information(add tolerance) Aug. 2009
Rev 1.2 /Aug. 2009 3
11
128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
DESCRIPTION
The Hynix H55S1262EFP is suited for non-PC application which use the batteries such as PDAs, 2.5G and 3G cellular
phones with internet access and multimedia capabilities, mini-notebook, handheld PCs.
The Hynix 128M Mobile SDRAM is 134,217,728-bit CMOS Mobile Synchronous DRAM(Mobile SDR), ideally suited for the
main memory applications which requires large memory density and high bandwidth. It is organized as 4banks of
2,097,152x16.
Mobile SDRAM is a type of DRAM which operates in synchronization with input clock. The Hynix Mobile SDRAM latch
each control signal at the rising edge of a basic input clock (CLK) and input/output data in synchronization with the
input clock (CLK). The address lines are multiplexed with the Data Input/ Output signals on a multiplexed x16 Input/
Output bus. All the commands are latched in synchronization with the rising edge of CLK.
The Mobile SDRAMs provides for programmable read or write Burst length of Programmable burst lengths: 1, 2, 4, 8
locations or full page. An AUTO PRECHARGE function may be enabled to provide a self-timed row precharge that is ini-
tiated at the end of the burst access. The Mobile SDRAM uses an internal pipelined architecture to achieve high-speed
operation. This architecture is compartible with the
2n
rule of prefetch architectures, but it also allows the column
address to be changed on every clock cycle to achieve a high-speed, fully random access. Precharging one bank while
accessing one of the other three banks will hide the precharge cycles and provide seamless, high-speed, randon-
access operation.
Read and write accesses to the Hynix Mobile SDRAMs are burst oriented;
accesses start at a selected location and continue for a programmed number of locations in a programmed sequence.
Accesses begin with the registration of an ACTIVE command, which is then followed by a READ or WRITE command.
The address bits registered coincident with the ACTIVE command are used to select the bank and the row to be
accessed. The address bits registered coincident with the READ or WRITE command are used to select the bank and
the starting column location for the burst access. A burst of Read or Write cycles in progress can be terminated by a
burst terminate command or can be interrupted and replaced by a new burst Read or Write command on any
cycle(This pipelined design is not restricted by a
2N
rule).
The Hynix Mobile SDR also provides for special programmable options including Partial Array Self Refresh of full array,
half array, quarter array Temperature Compensated Self Refresh of 45 or 85 degrees
o
C.
The Hynix Mobile SDR has the special Low Power function of Auto TCSR(Temperature Compensated Self Refresh) to
reduce self refresh current consumption. Since an internal temperature sensor is implanted, it enables to automatically
adjust refresh rate according to temperature without external EMRS command.
Deep Power Down Mode is a additional operating mode for Mobile SDR. This mode can achieve maximum power
reduction by removing power to the memory array within each Mobile SDR. By using this feature, the system can cut
off alomost all DRAM power without adding the cost of a power switch and giving up mother-board power-line layout
flexibility.
All inputs are LV-CMOS compatible. Devices will have a V
DD
and V
DDQ
supply of 1.8V (nominal).
Rev 1.2 /Aug. 2009 4
11
128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
INFORMATION for Hynix KNOWN GOOD DIE
With the advent of Mullti-Chip package (MCPs), Package on Package (PoP) and system in a package (SiP) applications,
customer demand for Known Good Die (KGD) has increased.
Requirements for smaller form factors and higher memory densities are fueling the need for Wafer-level memory solu-
tions due to their superior flexibility. Hynix Known Good Die (KGD) products can be used in packaging technologies
such as systems-in-a-package (SIPs) and multi-chip packages (MCPs) to reduce the board area required, making them
ideal for handheld PCs, and many other portable digital applications.
Hynix Mobile DRAM will be able to containue its constant effort of enabling the Advanced package products of all appli-
cation customers.
- Please Contact Hynix Office for Hynix KGD product availability and informations.
Rev 1.2 /Aug. 2009 5
11
128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
FEATURES
●
Standard SDRAM Protocol
●
Clock Synchronization Operation
- All the commands registered on positive edge of basic input clock (CLK)
●
MULTIBANK OPERATION - Internal 4bank operation
- During burst Read or Write operation, burst Read or Write for a different bank is performed.
- During burst Read or Write operation, a different bank is activated and burst Read or Write
for that bank is performed
- During auto precharge burst Read or Write, burst Read or Write for a different bank is performed
●
Power Supply Voltage : VDD / VDDQ =
1.7V to 1.95V
●
LVCMOS compatible I/O Interface
●
Low Voltage interface to reduce I/O power
●
Programmable burst length: 1, 2, 4, 8 or full page
●
Programmable Burst Type : sequential or interleaved
●
Programmable CAS latency of 3 or 2
●
Programmable Drive Strength
●
Low Power Features
- Programmable PASR(Partial Array Self Refresh)
- Auto TCSR (Temperature Compensated Self Refresh)
- Programmable DS (Drive Strength)
- Deep Power Down Mode
●
-25
o
C ~ 85
o
C or -30
o
C ~ 85
o
C Operation Temperature
- Extended Temp. : -25
o
C ~ 85
o
C
- Mobile Temp. : -30
o
C ~ 85
o
C
●
Package Type : 54Ball FBGA
Rev 1.2 /Aug. 2009 6
11
128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
128Mb Mobile SDR SDRAM ORDERING INFORMATION
Part Number Clock Fre-
quency
CAS
Latency Organization Interface Operation
temperature Package
H55S1262EFP-60E 166MHz 3
4banks x 2Mb x
16 LVCMOS Extended Temp
(-25
o
C ~ 85
o
C)
54 ball
FBGA
H55S1262EFP-75E 133MHz 3
H55S1262EFP-A3E 105MHz 3
H55S1262EFP-60M 166MHz 3
4banks x 2Mb x
16 LVCMOS Mobile Temp
(-30
o
C ~ 85
o
C)
54 ball
FBGA
H55S1262EFP-75M 133MHz 3
H55S1262EFP-A3M 105MHz 3
Rev 1.2 /Aug. 2009 7
11
128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
BALL DESCRIPTION
91 2 3 4 6 7 8
TOP
VIEW
VSS DQ15 VSSQ VDDQ DQ0 VDD
DQ14 DQ13 VDDQ VSSQ DQ2 DQ1
DQ12 DQ11 VSSQ VDDQ DQ4 DQ3
DQ10 DQ9 VDDQ VSSQ DQ6 DQ5
DQ8 NC VSS VDD LDQM DQ7
UDQM CLK CKE /CAS /RAS /WE
NC A11 A9 BA0 BA1 /CS
A8 A7 A6 A0 A1 A10
VSS A5 A4 A3 A2 VDD
A
B
C
D
E
F
G
H
J
Top view
Rev 1.2 /Aug. 2009 8
11
128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
BALL DESCRIPTION
SYMBOL TYPE DESCRIPTION
CLK INPUT Clock : The system clock input. All other inputs are registered to the SDRAM on the
rising edge of CLK
CKE INPUT Clock Enable : Controls internal clock signal and when deactivated, the SDRAM will
be one of the states among (deep) power down, suspend or self refresh
CS INPUT Chip Select : Enables or disables all inputs except CLK, CKE, UDQM and LDQM
BA0, BA1 INPUT Bank Address : Selects bank to be activated during RAS activity
Selects bank to be read/written during CAS activity
A0 ~ A11 INPUT Row Address : RA0 ~ RA11, Column Address : CA0 ~ CA8
Auto-precharge flag : A10
RAS, CAS, WE INPUT Command Inputs : RAS, CAS and WE define the operation
Refer function truth table for details
UDQM, LDQM INPUT Data Mask : Controls output buffers in read mode and masks input data in write
mode
DQ0 ~ DQ15 I/O Data Input/Output : Multiplexed data input/output pin
V
DD
/V
SS
SUPPLY Power supply for internal circuits
V
DDQ
/V
SSQ
SUPPLY Power supply for output buffers
NC - No connection
Rev 1.2 /Aug. 2009 9
11
128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
ABSOLUTE MAXIMUM RATING
Note1
- Extended Temp. : -25
o
C ~ 85
o
C
- Mobile Temp. : -30
o
C ~ 85
o
C
DC OPERATING CONDITION
(TC= -25 to 85
o
C
3)
or -30 to 85
o
C
3)
)
Note :
1. All Voltages are referenced to V
SS
= 0V
2. V
DDQ
must not exceed the level of V
DD
3. - Extended Temp. : -25
o
C ~ 85
o
C
- Mobile Temp. : -30
o
C ~ 85
o
C
AC OPERATING TEST CONDITION
(TC= -25 to 85
o
C
1)
or -30 to 85
o
C
1)
, VDD = 1.7V min to 1.95V max, VSS = 0V)
Note1
- Extended Temp. : -25
o
C ~ 85
o
C
- Mobile Temp. : -30
o
C ~ 85
o
C
Parameter Symbol Rating Unit
Case Temperature T
C
-25 ~ 85
1)
o
C
-30 ~ 85
1)
Storage Temperature T
STG
-55 ~ 125
o
C
Voltage on Any Pin relative to V
SS
V
IN
, V
OUT
-1.0 ~ 2.6 V
Voltage on V
DD
relative to V
SS
V
DD
-1.0 ~ 2.6 V
Voltage on V
DDQ
relative to V
SS
V
DDQ
-1.0 ~ 2.6 V
Short Circuit Output Current I
OS
50 mA
Power Dissipation PD 1 W
Soldering Temperature
.
Time T
SOLDER
260
.
20
o
C
.
Sec
Parameter Symbol Min Typ Max Unit Note
Power Supply Voltage V
DD
1.7 1.8 1.95 V 1
Power Supply Voltage V
DDQ
1.7 1.8 1.95 V 1, 2
Input High Voltage V
IH
0.8*V
DDQ
-
V
DDQ+
0.3 V 1, 2
Input Low Voltage V
IL
-0.3
-
0.3 V 1, 2
Parameter Symbol Value Unit
AC Input High/Low Level Voltage V
IH
/ V
IL
0.9*V
DDQ
/0.2 V
Input Timing Measurement Reference Level Voltage V
trip
0.5*V
DDQ
V
Input Rise/Fall Time t
R
/ t
F
1 ns
Output Timing Measurement Reference Level Voltage V
outref
0.5*V
DDQ
V
Output Load Capacitance for Access Time Measurement CL 30 pF
Rev 1.2 /Aug. 2009 10
11
128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
CAPACITANCE
(TC= 25
o
C, f=1MHz)
DC CHARACTERRISTICS I
(TC= -25 to 85
o
C
5)
or -30 to 85
o
C
5)
)
Note :
1. V
IN
= 0 to 1.8V. All other pins are not tested under V
IN
=0V.
2. D
OUT
is disabled. V
OUT
= 0 to 1.95V.
3. I
OUT
= - 0.1mA
4. I
OUT
= + 0.1mA
5. - Extended Temp. : -25
o
C ~ 85
o
C
- Mobile Temp. : -30
o
C ~ 85
o
C
Parameter Pin Symbol
6/H/S
Unit
Min Max
Input capacitance
CLK CI1 TBD TBD pF
A0~A11, BA0, BA1, CKE, CS, RAS,
CAS, WE, UDQM, LDQM CI2 TBD TBD pF
Data input/output capacitance DQ0 ~ DQ15 CI/O TBD TBD pF
Parameter Symbol Min Max Unit Note
Input Leakage Current I
LI
-1 1 uA 1
Output Leakage Current I
LO
-1 1 uA 2
Output High Voltage V
OH
V
DDQ
-0.2 - V 3
Output Low Voltage V
OL
- 0.2 V 4
Rev 1.2 /Aug. 2009 11
11
128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
DC CHARACTERISTICS II (TC= -25 to 85
o
C
4)
or -30 to 85
o
C
4)
, VDD = 1.7V min to 1.95V max, VSS = 0V)
Note :
1. I
DD1
and I
DD4
depend on output loading and cycle rates. Specified values are measured with the output open
2. See the tables of next page for more specific I
DD6
current values.
3. Please contact Hynix office for more information and ability for DPD operation. Deep Power Down operation is a hynix optional
function.
4. - Extended Temp. : -25
o
C ~ 85
o
C
- Mobile Temp. : -30
o
C ~ 85
o
C
Parameter Symbol Test Condition
Speed
Unit Note
166MHz 133MHz
Operating Current I
DD1
Burst length=1, One bank active
t
RC
≥ t
RC
(min), I
OL
=0mA 45 40 mA 1
Precharge Standby Current
in Power Down Mode
I
DD2P
CKE ≤ V
IL
(max), t
CK
= min 0.3 mA
I
DD2PS
CKE ≤ V
IL
(max), t
CK
= ∞ 0.3 mA
Precharge Standby Current
in Non Power Down Mode
I
DD2N
CKE ≥ V
IH
(min), CS ≥ V
IH
(min), t
CK
= min
Input signals are changed one time during
2clks.
All other pins ≥ V
DD
-0.2V or ≤ 0.2V
5
mA
I
DD2NS
CKE ≥ V
IH
(min), t
CK
= ∞
Input signals are stable. 3
Active Standby Current
in Power Down Mode
I
DD3P
CKE ≤ V
IL
(max), t
CK
= min 2
mA
I
DD3PS
CKE ≤ V
IL
(max), t
CK
= ∞ 1.2
Active Standby Current
in Non Power Down Mode
I
DD3N
CKE ≥ V
IH
(min), CS ≥ V
IH
(min), t
CK
= min
Input signals are changed one time during
2clks.
All other pins ≥ V
DD
-0.2V or ≤ 0.2V
10
mA
I
DD3NS
CKE ≥ V
IH
(min), t
CK
= ∞
Input signals are stable. 5
Burst Mode Operating
Current I
DD4
t
CK
≥ t
CK
(min), I
OL
=0mA
All banks active 55 50 mA 1
Auto Refresh Current I
DD5
t
RFC
≥ t
RFC
(min), 80 mA
Self Refresh Current I
DD6
CKE ≤ 0.2V See Next Page uA 2
Standby Current in
Deep Power Down Mode I
DD7
See p.49~50 10 uA 3
Rev 1.2 /Aug. 2009 12
11
128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
DC CHARACTERISTICS III
Notes:
1. VDD / VDDQ = 1.7V min to 1.95V max
2. Related numerical values in this 45
o
C are examples for reference sample value only.
3. With a on-chip temperature sensor of Mobile memory, auto temperature compensated self refresh will automatically
adjust the interval of self-refresh operation according to ambient temperature variations.
Temp.
(
o
C)
Memory Array Unit
4 Banks 2 Banks 1 Bank
45 135 125 120
uA
85 250 185 170
uA
Rev 1.2 /Aug. 2009 13
11
128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
AC CHARACTERISTICS I
(AC operating conditions unless otherwise noted)
Note : Condition - [TC= -30 to 85
o
C, VDD = 1.7V min to 1.95V max, VSS = 0V]
1. Assume t
R
/ t
F
(input rise and fall time) is 1ns. If t
R
& t
F
> 1ns, then [(t
R
+t
F
)/2-1]ns should be added to the parameter.
2. Access time to be measured with input signals of 1V/ns edge rate, from 0.8V to 0.2V. If t
R
> 1ns, then (t
R
/2-0.5)ns should be added
to the parameter.
3. Output Load : 30pF+No termination
●
AC high level input voltage / low level input voltage : 1.6 / 0.2V
●
Input timing measurement reference level : 0.9V
●
Transition time (input rise and fall time) : 0.5ns
●
Output timing measurement reference level : 0.9V
●
Output load : CL = 30pF
Parameter Symbol
166MHz 133MHz 105MHz
Unit Note
Min Max Min Max Min Max
System Clock
Cycle Time
CAS Latency=3 t
CK3
6.0 1000 7.5 1000 9.5 1000 ns
CAS Latency=2 t
CK2
12 1000 12 1000 15 1000 ns
Clock High Pulse Width t
CHW
2.0 - 2.5 - 3.0 - ns 1
Clock Low Pulse Width t
CLW
2.0 - 2.5 - 3.0 - ns 1
Access Time From Clock
CAS Latency=3 t
AC3
- 5.4 - 6.0 - 7.0 ns 2, 3
CAS Latency=2 t
AC2
- 6.0 - 8.0 - 10 ns 2, 3
Data-out Hold Time t
OH
2.6 - 2.6 - 2.6 - ns 3
Data-Input Setup Time t
DS
2.0 - 2.0 - 3.0 - ns 1
Data-Input Hold Time t
DH
1.0 - 1.0 - 1.5 - ns 1
Address Setup Time t
AS
2.0 - 2.0 - 3.0 - ns 1
Address Hold Time t
AH
1.0 - 1.0 - 1.5 - ns 1
CKE Setup Time t
CKS
2.0 - 2.0 - 3.0 - ns 1
CKE Hold Time t
CKH
1.0 - 1.0 - 1.5 - ns 1
Command Setup Time t
CS
2.0 - 2.0 - 3.0 - ns 1
Command Hold Time t
CH
1.0 - 1.0 - 1.5 - ns 1
CLK to Data Output in Low-Z Time t
OLZ
1.0 - 1.0 - 1.0 - ns
CLK to Data Output in
High-Z Time
CAS Latency=3 t
OHZ3
5.4 6.0 7.0 ns
CAS Latency=2 t
OHZ2
6.0 8.0 10 ns
Output
Z = 50
Ω
ΩΩ
Ω
30pF
Output Load
Output
t
OH
t
AC
t
SETUP
t
HOLD
t
CH
t
CL
t
CK
1.6V
0.9V
0.2V
1.6V
0.9V
0.2V
Input
CLK
Rev 1.2 /Aug. 2009 14
11
128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
AC CHARACTERISTICS II
(AC operating conditions unless otherwise noted)
Note : Condition - [TC= -25 to 85
o
C or -30 to 85
o
C, VDD = 1.7V min to 1.95V max, VSS = 0V]
- Extended Temp. : -25
o
C ~ 85
o
C
- Mobile Temp. : -30
o
C ~ 85
o
C
Parameter Symbol
166MHz 133MHz 105MHz
Unit Note
Min Max Min Max Min Max
RAS Cycle Time t
RC
60 - 72.5 - 90 - ns
RAS to CAS Delay t
RCD
18 - 22.5 - 28.5 - ns
RAS Active Time t
RAS
50 100K 50 100K 60 100K ns
RAS Precharge Time t
RP
18 - 22.5 - 28.5 - ns
RAS to RAS Bank Active Delay t
RRD
12 - 15 - 19 - ns
AUTO REFRESH Period t
RFC
80 - 80 - 80 - ns
CAS to CAS Delay t
CCD
1 - 1 - 1 - CLK
Write Command to Data-In Delay t
WTL
0 - 0 - 0 - CLK
Data-in to Precharge Command t
DPL
2 - 2 - 2 - CLK
Data-In to Active Command t
DAL
t
DPL
+t
RP
DQM to Data-Out Hi-Z t
DQZ
2 - 2 - 2 - CLK
DQM to Data-In Mask t
DQM
0 - 0 - 0 - CLK
MRS to New Command t
MRD
2 - 2 - 2 - CLK
Precharge to Data Output
High-Z
CAS Latency=3 t
PROZ3
3 - 3 - 3 - CLK
CAS Latency=2 t
PROZ2
2 - 2 - 2 - CLK
Power Down Exit Time t
DPE
1CLK
+
tCKS
-
1CLK
+
tCKS
-
1CLK
+
tCKS
- CLK
Self Refresh Exit Time t
XSR
120 - 120 - 120 - ns
Refresh Time t
REF
- 64 - 64 - 64 ms
Rev 1.2 /Aug. 2009 15
11
128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
FUNCTIONAL BLOCK DIAGRAM
2Mbit x 4banks x 16 I/O Mobile Synchronous DRAM
16
Sense AMP & I/O Gate
Output Buffer & Logic
Address
Register
Mode Register
State Machine Address Buffers
Bank Select
Row Active
CAS
Latency
CLK
CKE
/CS
/RAS
/CAS
/WE
LDQM,
UDQM
A0
A1
BA1
BA0
A11
Refresh
DQ0
DQ15
Data Out Control
Burst
Length
16
Extended
Mode
Register
Self refresh
logic & timer
Internal Row
Counter
Row
Pre
Decoder
Column
Pre
Decoder
Column Add
Counter
Burst
Counter
Column Active
Row decoders
Row decoders
Column decoders
2Mx16 Bank0
2Mx16 Bank1
2Mx16 Bank2
2Mx16 Bank3
Memory
Cell
Array
Row decoders
PASR
Rev 1.2 /Aug. 2009 16
11
128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
BASIC FUNCTIONAL DESCRIPTION
Mode Register
BA1 BA0 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
0 0 0 0 OP Code 0 0 CAS Latency BT Burst Length
OP Code
A9 Write Mode
0 Burst Read and Burst Write
1 Burst Read and Single Write
Burst Type
A3 Burst Type
0 Sequential
1 Interleave
Burst Length
A2 A1 A0 Burst Length
A3 = 0 A3=1
0 0 0 1 1
0 0 1 2 2
0 1 0 4 4
0 1 1 8 8
1 0 0 Reserved Reserved
1 0 1 Reserved Reserved
1 1 0 Reserved Reserved
1 1 1 Full page Reserved
CAS Latency
A6 A5 A4 CAS Latency
0 0 0 Reserved
0 0 1 Reserved
0 1 0 2
0 1 1 3
1 0 0 Reserved
1 0 1 Reserved
1 1 0 Reserved
1 1 1 Reserved
Rev 1.2 /Aug. 2009 17
11
128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
BASIC FUNCTIONAL DESCRIPTION
(Continued)
Extended Mode Register
BA1 BA0 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
1 0 0 0 0 0 0 DS 0 0 PASR
DS (Driver Strength)
A6 A5 Driver Strength
0 0 Full
0 1 1/2 Strength
1 0 1/4 Strength
1 1 Reserved
PASR (Partial Array Self Refresh)
A2 A1 A0 Self Refresh Coverage
0 0 0 All Banks
0 0 1 Half of Total Bank (BA1=0 or Bank 0,1)
0 1 0 Quarter of Total Bank (BA1=BA0=0 or Bank 0)
0 1 1 Reserved
1 0 0 Reserved
1 0 1 Half of Bank 0(Bank 0 and Row Address MSB=0)
1 1 0 Quarter of Bank 0(Bank 0 and Row Address 2 MSBs=0)
1 1 1 Reserved
Rev 1.2 /Aug. 2009 18
11
128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
COMMAND TRUTH TABLE
Note : 1. Exiting Self Refresh occurs by asynchronously bringing CKE from low to high.
2. BA1/BA0 must be issued 0/0 in the mode register set, and 1/0 in the extended mode register set.
Function CKEn-1 CKEn CS RAS CAS WE DQM ADDR A10
/AP BA Note
Mode Register Set
H X L L L L X Op Code 2
Extended Mode Register
Set
H X L L L L X Op Code 2
No Operation
H X L H H H X X
Device Deselect
H X H X X X X X
Bank Active
H X L L H H X Row Address V
Read
H X L H L H Column L V
Read with Autoprecharge
H X L H L H X Column H V
Write
H X L H L L X Column L V
Write with Autoprecharge
H X L H L L X Column H V
Precharge All Banks
H X L L H L X X H X
Precharge selected Bank
H X L L H L X X L V
Burst stop
H X L H H L X X
Data Write/Output Enable
H X X X X
Data Mask/Output Disable
H X X V X
Auto Refresh
H H L L L H X X
Self Refresh Entry
H L L L L H X X
Self Refresh Exit
L H H X X X X X 1
L H H H
Precharge Power Down
Entry
H L H X X X X X
L H H H
Precharge Power Down Exit
L H H X X X X X
L H H H
Clock Suspend Entry
H L H X X X X X
L V V V
Clock Suspend Exit
L H X X X
Deep Power Down Entry
H L L H H L X X
Deep Power Down Exit
L H X X X
Rev 1.2 /Aug. 2009 19
11
128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
CURRENT STATE TRUTH TABLE
(Sheet 1 of 4)
Current
State
Command
Action Notes
CS RAS CAS WE BA0/
BA1 A
max
-A0 Description
Idle
L L L L OP CODE Mode Register Set Set the Mode Register 14
L L L H X X Auto or Self Refresh Start Auto or Self Refresh 5
L L H L BA X Precharge No Operation
L L H H BA Row Add. Bank Activate Activate the specified
bank and row
L H L L BA Col Add.
A10 Write/WriteAP ILLEGAL 4
L H L H BA Col Add.
A10 Read/ReadAP ILLEGAL 4
L H H H X X No Operation No Operation 3
H X X X X X Device Deselect No Operation or Power
Down 3
Row
Active
L L L L OP CODE Mode Register Set ILLEGAL 13,14
L L L H X X Auto or Self Refresh ILLEGAL 13
L L H L BA X Precharge Precharge 7
L L H H BA Row Add. Bank Activate ILLEGAL 4
L H L L BA Col Add.
A10 Write/WriteAP Start Write : optional
AP(A10=H) 6
L H L H BA Col Add.
A10 Read/ReadAP Start Read : optional
AP(A10=H) 6
L H H H X X No Operation No Operation
H X X X X X Device Deselect No Operation
Read
L L L L OP CODE Mode Register Set ILLEGAL 13,14
L L L H X X Auto or Self Refresh ILLEGAL 13
L L H L BA X Precharge Termination Burst: Start
the Precharge
L L H H BA Row Add. Bank Activate ILLEGAL 4
L H L L BA Col Add.
A10 Write/WriteAP Termination Burst: Start
Write(optional AP) 8,9
L H L H BA Col Add.
A10 Read/ReadAP Termination Burst: Start
Read(optional AP) 8
L H H H X X No Operation Continue the Burst
Rev 1.2 /Aug. 2009 20
11
128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
CURRENT STATE TRUTH TABLE
(Sheet 2 of 4)
Current
State
Command
Action Notes
CS RAS CAS WE BA0/
BA1 A
max
-A0 Description
Read H X X X X X Device Deselect Continue the Burst
Write
L L L L OP CODE Mode Register Set ILLEGAL 13,14
L L L H X X Auto or Self Refresh ILLEGAL 13
L L H L BA X Precharge Termination Burst: Start
the Precharge 10
L L H H BA Row Add. Bank Activate ILLEGAL 4
L H L L BA Col Add.
A10 Write/WriteAP Termination Burst: Start
Write(optional AP) 8
L H L H BA Col Add.
A10 Read/ReadAP Termination Burst: Start
Read(optional AP) 8,9
L H H H X X No Operation Continue the Burst
H X X X X X Device Deselect Continue the Burst
Read with
Auto
Precharge
L L L L OP CODE Mode Register Set
ILLEGAL 13,14
L L L H X X Auto or Self Refresh ILLEGAL 13
L L H L BA X Precharge ILLEGAL 4,12
L L H H BA Row Add. Bank Activate ILLEGAL 4,12
L H L L BA Col Add. A10 Write/WriteAP ILLEGAL 12
L H L H BA Col Add. A10 Read/ReadAP ILLEGAL 12
L H H H X X No Operation Continue the Burst
H X X X X X Device Deselect Continue the Burst
Write with
Auto
Precharge
L L L L OP CODE Mode Register Set ILLEGAL 13,14
L L L H X X Auto or Self Refresh ILLEGAL 13
L L H L BA X Precharge ILLEGAL 4,12
L L H H BA Row Add. Bank Activate ILLEGAL 4,12
L H L L BA Col Add. A10 Write/WriteAP ILLEGAL 12
L H L H BA Col Add. A10 Read/ReadAP ILLEGAL 12
L H H H X X No Operation Continue the Burst
H X X X X X Device Deselect Continue the Burst
Rev 1.2 /Aug. 2009 21
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128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
CURRENT STATE TRUTH TABLE
(Sheet 3 of 4)
Current
State
Command
Action Notes
CS RAS CAS WE BA0/
BA1 A
max
-A0 Description
Precharging
L L L L OP CODE Mode Register Set ILLEGAL 13,14
L L L H X X Auto or Self Refresh ILLEGAL 13
L L H L BA X Precharge No Operation:
Bank(s) idle after t
RP
L L H H BA Row Add. Bank Activate ILLEGAL 4,12
L H L L BA Col Add. A10 Write/WriteAP ILLEGAL 4,12
L H L H BA Col Add. A10 Read/ReadAP ILLEGAL 4,12
L H H H X X No Operation No Operation:
Bank(s) idle after t
RP
H X X X X X Device Deselect No Operation:
Bank(s) idle after t
RP
Row
Activating
L L L L OP CODE Mode Register Set ILLEGAL 13,14
L L L H X X Auto or Self Refresh ILLEGAL 13
L L H L BA X Precharge ILLEGAL 4,12
L L H H BA Row Add. Bank Activate ILLEGAL 4,11,1
2
L H L L BA Col Add. A10 Write/WriteAP ILLEGAL 4,12
L H L H BA Col Add. A10 Read/ReadAP ILLEGAL 4,12
L H H H X X No Operation No Operation: Row
Active after t
RCD
H X X X X X Device Deselect No Operation: Row
Active after t
RCD
Write
Recovering
L L L L OP CODE Mode Register Set ILLEGAL 13,14
L L L H X X Auto or Self Refresh ILLEGAL 13
L L H L BA X Precharge ILLEGAL 4,13
L L H H BA Row Add. Bank Activate ILLEGAL 4,12
L H L L BA Col Add. A10 Write/WriteAP Start Write:
Optional AP(A10=H)
L H L H BA Col Add. A10 Read/ReadAP Start Read: Optional
AP(A10=H) 9
L H H H X X No Operation No Operation:
Row Active after t
DPL
Rev 1.2 /Aug. 2009 22
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128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
CURRENT STATE TRUTH TABLE
(Sheet 4 of 4)
Current
State
Command
Action Notes
CS RAS CAS WE BA0/
BA1 A
max
-A0 Description
Write
Recovering H X X X X X Device Deselect No Operation:
Row Active after t
DPL
Write
Recovering
with Auto
Precharge
L L L L OP CODE Mode Register Set ILLEGAL 13,14
L L L H X X Auto or Self Refresh ILLEGAL 13
L L H L BA X Precharge ILLEGAL 4,13
L L H H BA Row Add. Bank Activate ILLEGAL 4,12
L H L L BA Col Add. A10 Write/WriteAP ILLEGAL 4,12
L H L H BA Col Add. A10 Read/ReadAP ILLEGAL 4,9,12
L H H H X X No Operation No Operation:
Precharge after t
DPL
H X X X X X Device Deselect No Operation:
Precharge after t
DPL
Refreshing
L L L L OP CODE Mode Register Set ILLEGAL 13,14
L L L H X X Auto or Self Refresh ILLEGAL 13
L L H L BA X Precharge ILLEGAL 13
L L H H BA Row Add. Bank Activate ILLEGAL 13
L H L L BA Col Add. A10 Write/WriteAP ILLEGAL 13
L H L H BA Col Add. A10 Read/ReadAP ILLEGAL 13
L H H H X X No Operation No Operation:
idle after t
RC
H X X X X X Device Deselect No Operation:
idle after t
RC
Mode
Register
Accessing
L L L L OP CODE Mode Register Set ILLEGAL 13,14
L L L H X X Auto or Self Refresh ILLEGAL 13
L L H L BA X Precharge ILLEGAL 13
L L H H BA Row Add. Bank Activate ILLEGAL 13
L H L L BA Col Add. A10 Write/WriteAP ILLEGAL 13
L H L H BA Col Add. A10 Read/ReadAP ILLEGAL 13
L H H H X X No Operation No Operation:
idle after 2 clock cycles
H X X X X X Device Deselect No Operation:
idle after 2 clock cycles
Rev 1.2 /Aug. 2009 23
11
128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
Note :
1. H: Logic High, L: Logic Low, X: Don
'
t care, BA: Bank Address, AP: Auto Precharge.
2. All entries assume that CKE was active during the preceding clock cycle.
3. If both banks are idle and CKE is inactive, then in power down cycle
4. Illegal to bank in specified states. Function may be legal in the bank indicated by Bank Address,
depending on the state of that bank.
5. If both banks are idle and CKE is inactive, then Self Refresh mode.
6. Illegal if t
RCD
is not satisfied.
7. Illegal if t
RAS
is not satisfied.
8. Must satisfy burst interrupt condition.
9. Must satisfy bus contention, bus turn around, and/or write recovery requirements.
10. Must mask preceding data which don
'
t satisfy t
DPL
.
11. Illegal if t
RRD
is not satisfied
12. Illegal for single bank, but legal for other banks in multi-bank devices.
13. Illegal for all banks.
14. Mode Register Set and Extended Mode Register Set is same command truth table except BA1.
Rev 1.2 /Aug. 2009 24
11
128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
CKE Enable(CKE) Truth TABLE
(Sheet 2 of 1)
Current
State
CKE Command
Action Notes
Previous
Cycle
Current
Cycle CS RAS CAS WE BA0,
BA1
A
max
-
A0
Self
Refresh
H X X X X X X X INVALID 1
L H H X X X X X Exit Self Refresh with
Device Deselect 2
L H L H H H X X Exit Self Refresh with
No Operation 2
L H L H H L X X ILLEGAL 2
L H L H L X X X ILLEGAL 2
L H L L X X X X ILLEGAL 2
L L X X X X X X Maintain Self Refresh
Power
Down
H X X X X X X X INVALID 1
L H H X X X X X Power Down mode exit,
all banks idle 2
L H H H X X
L H L
L X X X X
ILLEGAL 2X L X X X
X X L X X
L L X X X X X X Maintain Power Down Mode
Deep
Power
Down
H X X X X X X X INVALID 1
L H X X X X X X Deep Power
Down mode exit 5
L L X X X X X X Maintain Deep
Power Down Mode
Rev 1.2 /Aug. 2009 25
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128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
CKE Enable(CKE) Truth TABLE
(Sheet 2 of 2)
Note :
1. For the given current state CKE must be low in the previous cycle.
2. When CKE has a low to high transition, the clock and other inputs are re-enabled asynchronously. When exiting power down mode,
a NOP (or Device Deselect) command is required on the first positive edge of clock after CKE goes high.
3. The address inputs depend on the command that is issued.
4. The Precharge Power Down mode, the Self Refresh mode, and the Mode Register Set can only be entered
from the all banks idle state.
5. When CKE has a low to high transition, the clock and other inputs are re-enabled asynchronously.
When exiting deep power down mode, a NOP (or Device Deselect) command is required on the first positive edge of
clock after CKE goes high and is maintained for a minimum 200usec.
Current
State
CKE Command
Action Notes
Previous
Cycle
Current
Cycle CS RAS CAS WE BA0,
BA1
A
max
-
A0
All
Banks
Idle
H H H X X X Refer to the idle State section
of the Current State
Truth Table
3
H H L H X X 3
H H L L H X 3
H H L L L H X X Auto Refresh
H H L L L L OP CODE Mode Register Set 4
H L H X X X Refer to the idle State section
of the Current State
Truth Table
3
H L L H X X 3
H L L L H X 3
H L L L L H X X Entry Self Refresh 4
H L L L L L OP CODE Mode Register Set
L X X X X X X X Power Down 4
Any State
other than
listed above
H H X X X X X X
Refer to operations of
the Current State
Truth Table
H L X X X X X X Begin Clock Suspend
next cycle
L H X X X X X X Exit Clock Suspend
next cycle
L L X X X X X X Maintain Clock Suspend
Rev 1.2 /Aug. 2009 26
11
128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
Mobile SDR SDRAM OPERATION
State Diagram
ACT :
Active
DPDS :
Enter Deep
Power-Down
DPDSX :
Exit Deep Power-
DownEMRS
EMRS :
Ext. Mode Reg.
Set
MRS :
Mode Register Set
PRE :
Precharge
PREALL :
Precharge All
Banks
REFA :
Auto Refresh
REFS :
Enter Self Refresh
REFSX :
Exit Self Refresh
READ :
Read w/o Auto
Precharge
READA :
Read with Auto
Precharge
WRITE :
Write w/o Auto
Precharge
WRITEA :
Write with Auto
Precharge
IDLE
DEEP
POWER
DOWN
Power
Down
ROW
ACTIVE
ACT
WRITEREAD
Active
Power
Down
WRITE
with AP
READ
with AP
WriteRead
READ
SUSPEND
READA
SUSPEND
WRITE
SUSPEND
WRITEA
SUSPEND
Read Write
WRITEA
READA
Precharge
All
Automatic Sequence
Manual input
CKE
High
CKE
Low
CKE
Low
CKE
High
CKE
High
CKE
Low
CKE Low
CKE High
CKE
Low
CKE
High
Self
Refresh
(EXTENDED)
Mode Register
Set
Auto
Refresh
Precharge
All
Bank
Power
On
REFA
REFS
REFX
(E)MRS
DPDS
DPDSX
PRE
PRE
PRE
CKE
Low
CKE
High
Rev 1.2 /Aug. 2009 27
11
128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
DESELECT
The DESELECT function (CS = High) prevents new commands from being executed by the Mobile SDRAM, the Mobile
SDRAM ignore command input at the clock. However, the internal status is held. The Mobile SDRAM is effectively dese-
lected. Operations already in progress are not affected.
NO OPERATION
The NO OPERATION (NOP) command is used to perform a NOP to a Mobile SDRAM that is selected (CS = Low, RAS =
CAS = WE = High). This command is not an execution command. However, the internal operations continue. This pre-
vents unwanted commands from being registered during idle or wait states. Operations already in progress are not
affected. (see to next figure)
ACTIVE
The Active command is used to activate a row in particular bank for a subsequent Read or Write access. The value of
the BA0,BA1 inputs selects the bank, and the address provided on A0-A12(or the highest address bit) selects the row.
This row remains active (or open) for accesses until a PRECHARGE command is issued to that bank. (see to next fig-
ure)
CS
A0~Aamx
WE
CAS
RAS
Don't Care
CLK
CKE
High
BA0,1
CS
A0~Amax
WE
Bank Address
CAS
RAS
Row Address
Don't Care
CLK
CKE
High
RA
BA
BA0,1
NOP command ACTIVATING A SPECIFIC
ROW IN A SPECIFIC BANK
Rev 1.2 /Aug. 2009 28
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128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
READ / WRITE COMMAND
Before executing a read or write operation, the corresponding bank and the row address must be activated by the
bank active (ACT) command. An interval of tRCD is required between the bank active command input and the follow-
ing read/write command input.
The READ command is used to initiate a Burst Read to an active row. The value of BA0 and BA1 selects the bank and
address inputs select the starting column location.
The value of A10 determines whether or not auto precharge is used. If auto-precharge is selected, the row being
accessed will be precharged at the end of the read burst; if auto precharge is not selected, the row will remain open
for subsequent access. The valid data-out elements will be available CAS latency after the READ command is issued.
The WRITE command is used to initiate a Burst Write access to an active row. The value of BA0, BA1 selects the bank
and address inputs select the starting column location.
The value of A10 determines whether or not auto precharge is used. If auto-precharge is selected, the row being
accessed will be precharged at the end of the write burst; if auto precharge is not selected, the row will remain open
for subsequent access.
READ / WRITE COMMAND
CS
A0 ~ A 7
W E
CAS
RA S
Don't Care
CLK
CKE
High
CA
BA
BA0,1
High to Enable
Auto Precharge
Low to Disable
Auto Precharge
Read Com m and
Operation W rite Com m and
Operation
A10
CS
A0 ~ A 7
W E
CAS
RAS
CLK
CKE
High
CA
BA
BA0,1
A10
Rev 1.2 /Aug. 2009 29
11
128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
READ
A read operation starts when a read command is input. Output buffer becomes Low-Z in the (/CAS Latency - 1)
cycle after read command set. The SDRAM can perform a burst read operation.
The burst length can be set to 1, 2, 4 and 8. The start address for a burst read is specified by the column address and
the bank select address at the read command set cycle. In a read operation, data output starts after the number of
clocks specified by the /CAS Latency. The /CAS Latency can be set to 2 or 3.
When the burst length is 1, 2, 4 and 8 the DOUT buffer automatically becomes High-Z at the next clock after the suc-
cessive burst-length data has been output.
The /CAS latency and burst length must be specified at the mode register.
Read Burst Showing CAS Latency
tCK
Rev 1.2 /Aug. 2009 30
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128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
READ to READ
Data from a read burst may be concatenated or truncated by a subsequent READ command. The first data from the
new burst follows either the last element of a completed burst or the last desired element of a longer burst that is
being truncated.
When another read command is executed at the same ROW address of the same bank as the preceding read com-
mand execution, the second read can be performed after an interval of no less than 1 clock. Even when the first com-
mand is a burst read that is not yet finished, the data read by the second command will be valid.
Consecutive Read Bursts
A READ command can be initiated on any clock cycle following a previous READ command. Non-consecutive Reads are
shown in Figure. Full-speed random read accesses within a page or pages can be performed as shown in Fig.
CLK
Do
a0
READ
CL =3
CL =2
Don't Care
Command
Address
DQ
DQ
Do
a1
Do
b0
Do
b1
Do
a0
Do
a1
Do
b0
READ
’
BA, Col
b
BA, Col
a
NOP NOP
Rev 1.2 /Aug. 2009 31
11
128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
Non-Consective Read Bursts
Randum Read Bursts
CLK
Do
n
Do
n
READ READ
BA, Col
n
CL =3
CL =2
Don't Care
1) Do
n
(or
b
): Data out from column n
2) BA, Col
n (b)
= Bank A, Column n (b)
3) Burst Length = 4 : 3 subseqnent elements of Data Out appear in the programmed order following Do
n (b)
Command
Address
DQ
DQ
BA, Col
b
Do
b
Do
b
Do
g
CLK
CL =3
CL =2
Don't Care
DQ
DQ
READ READ READ READ
Command
BA, Col
n
Address BA, Col
b
BA, Col
x
BA, Col
g
Do
n
Do
b
Do
n'
Do
x
Do
x'
Do
b'
Do
g
Do
g'
Do
x'
Do
n
Do
n'
Do
x
Do
b
Do
b'
Do
g
’
1) Do
n,
etc: Data out from column n, etc
n', x', etc : Data Out elements, accoding to the programmd burst order
2) BA, Col
n
= Bank A, Column n
3) Burst Length = 1, 2, 4, 8 or full page in cases shown
4) Read are to active row in any banks
Rev 1.2 /Aug. 2009 32
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128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
READ BURST TERMINATE
Data from any READ burst may be truncated with a BURST TERMINATE command. The BURST TERMINATE latency is
equal to the read (CAS) latency, i.e., the BURST TERMINATE command should be issued X cycles after the READ com-
mand where X equals the desired data-out element.
Terminating a Read Burst
CLK
CL =3
CL =2
Don't Care
DQ
DQ
READ BURST
Comm and
BA, Col
n
Address
Do
n
Do
n'
Do
n
Do
n'
1) Do
n
: Data out from column n
2) BA, Col
n
= Bank A, Column n
3) Cases shown are bursts of 4, 8, or full page term inated after 2 data elements
Rev 1.2 /Aug. 2009 33
11
128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
READ to WRITE
Data from READ burst must be completed or truncated before a subsequent WRITE command can be issued. If trun-
cation is necessary, the BURST TERMINATE command must be used, as shown in next fig.
Read to Write
Note :
1. Same bank, same ROW address: When the write command is executed at the same ROW address of the same bank as the preced-
ing read command, the write command can be performed after an interval of no less than 1 clock. However, DQM must be set High
so that the output buffer becomes High-Z before data input.
2. Same bank, different ROW address: When the ROW address changes, consecutive write commands cannot be executed; it is nec-
essary to separate the two commands with a precharge command and a bank active command.
3. Different bank: When the bank changes, the write command can be performed after an interval of no less than 1 cycle, provided
that the other bank is in the bank active state. However, DQM must be set High so that the output buffer becomes High-Z before data
input.
CLK
CL = 3
CL = 2
Don't Care
DQ
DQ
READ BU RST W RITE
Comm and
BA, Col
n
Address
Do
n
Do
n'
Do
n
Do
n'
BA, Col
b
D
I
b0
D
I
b1
D
I
b2
DI
b3
D
I
b0
D
I
b1
D
I
b2
DI
b3
1) D O
n
= Data O ut from column n; DI b = D ata In to colum n b
Rev 1.2 /Aug. 2009 34
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128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
READ to PRECHARGE
Following the PRECHARGE command, a subsequent command to the same bank cannot be issued until tRP is met.
Note that part of the row precharge time is hidden during the access of the last data element(s).
In the case of a fixed-length burst being executed to completion, a PRECHARGE command issued at the optimum time
(as described above) provides the same operation that would result from the same fixed-length burst with auto pre-
charge.
The disadvantage of the PRECHARGEcommand is that it requires that the command and address buses be available at
the appropriate time to issue the command; the advantage of the PRECHARGE command is that it can be used to trun-
cate fixed-length or full-page bursts.
READ to PRECHARGE
CLK
CL = 3
CL = 2
Don't Care
DQ
DQ
READ PRE ACT
Com m and
BA, Col
n
Address Bank
A, All
BA,
Row
Do
n
tRP
Do
n
1) DO
n
= Data Out from colum n n
2) No te that Precharge may not be issued before tRAS ns after the ACTIVE com m and for applicable banks.
3) The ACTIVE comm and m a y be applied if tR C has been m et.
Rev 1.2 /Aug. 2009 35
11
128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
Write
Input data appearing on the data bus, is written to the memory array subject to the DM input logic level appearing
coincident with the data. If a given DM signal is registered Low, the corresponding data will be written to the memory;
if the DM signal is registered High, the corresponding data inputs will be ignored, and a write will not be executed to
that byte / column location.
During WRITE bursts, the first valild data-in element will be registered coincident with the WRITE command. Subse-
quent data elements will be registered on each successive positive clock edge. Upon completion of a fixed-length
burst, assuming no other commands have been initiated, the DQ will remain High-Z and any additional input data will
be ignored. A full-page burst will continue until terminated.
Data for any WRITE burst may be truncated with a subsequent WRITE command, and data for a fixed-length WRITE
burst may be immediately followed by data for a WRITE command. The new WRITE command can be issued on any
clock following the previous WRITE command, and the data provided coincident with the new command applies to the
new command.
Basic Write timing parameters for
Write Burst Operation
Note :
1. Same bank, same ROW address: When another write command is executed at the same ROW address of the same bank as the
preceding write command, the second write can be performed after an interval of no less than 1 clock. In the case of burst writes,
the second write command has priority.
2. Same bank, different ROW address: When the ROW address changes, consecutive write commands cannot be executed; it is nec-
essary to separate the two write commands with a precharge command and a bank active command.
3. Different bank: When the bank changes, the second write can be performed after an interval of no less than 1 clock, provided that
the other bank is in the bank active state. In the case of burst write, the second write command has priority.
CLK
Don't Care
DQ
WRITE
Command
BA, Col
b
Address
D
I
b0
DQ D
I
b0
D
I
b1
DQ D
I
b0
D
I
b1
D
I
b2
D
I
b3
DQ D
I
b0
D
I
b1
D
I
b2
D
I
b3
D
I
b4
D
I
b6
D
I
b7
CL = 2 or 3
BL = 1
BL = 2
BL = 4
BL = 8
D
I
b5
Rev 1.2 /Aug. 2009 36
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128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
WRITE to WRITE
Data for any WRITE burst may be concatenated with or truncated with a subsequent WRITE command. In either case,
a continuous flow of input data, can be maintained. The new WRITE command can be issued on any positive edge of
the clock following the previous WRITE command. The first data-in element from the new burst is applied after either
the last element of a completed burst or the last desired data element of a longer burst which is being truncated. The
new WRITE command should be issued X cycles after the first WRITE command, where X equals the number of
desired data-in element.
Concatenated Write Bursts
Random Write Cycles
CLK
Don't Care
WRITE WRITE
Command
BA, Col
b
Address
DQ D
I
b0
D
I
b1
D
I
b2
D
I
b3
D
I
n0
D
I
n2
D
I
n3
CL = 2 or 3
D
I
n1
BA, Col
n
DM
CLK
Don't Care
W RITE W RITE W RITE W RITE WRITE NOP
Com m and
BA, Col
b
Address
DQ D
I
b
D
I
b'
D
I
x
D
I
x
’
D
I
n
D
I
a
CL = 2 or 3
D
I
n
’
BA, Col
n
BA, Col
x
BA, Col
a
BA, Col
g
D
I
a
’
D
I
g
D
I
g
’
DM
Rev 1.2 /Aug. 2009 37
11
128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
WRITE to READ
The preceding burst write operation can be aborted and a new burst read operation can be started by inputting a new
read command in the write cycle. The data of the read command (READ) is output after the lapse of the /CAS latency.
The preceding write operation (WRIT) writes only the data input before the read command.
The data bus must go into a high-impedance state at least one cycle before output of the latest data.
Note:
1. Same bank, same ROW address: When the read command is executed at the same ROW address of the same bank as the preced-
ing write command, the read command can be performed after an interval of no less than 1 clock. However, in the case of a burst
write, data will continue to be written until one clock before the read command is executed.
2. Same bank, different ROW address: When the ROW address changes, consecutive read commands cannot be executed; it is nec-
essary to separate the two commands with a precharge command and a bank active command.
3. Different bank: When the bank changes, the read command can be performed after an interval of no less than 1 clock, provided
that the other bank is in the bank active state. However, in the case of a burst write, data will continue to be written until one clock
before the read command is executed (as in the case of the same bank and the same address).
CLK
Don't Care
DQ
WRITE READ
Command
BA, Col
b
Address
DQ
D
I
b0
D
I
b1
D
O
n0
D
O
n2
D
O
n3
BL = 4
D
O
n1
D
I
b0
D
I
b1
BL = 4
CL = 3
BA, Col
n
CL = 2
D
O
n0
D
O
n2
D
O
n3
D
O
n1
Rev 1.2 /Aug. 2009 38
11
128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
WRITE to PRECHARGE
Data for any WRITE burst may be followed by a subsequent PRECHARGE command to the same bank (provided Auto
Precharge was not activated). When the precharge command is executed for the same bank as the write command
that preceded it, the minimum interval between the two commands is 1 clock. However, if the burst write operation is
unfinished, the input data must be masked by means of DQM for assurance of the clock defined by tDPL. To follow a
WRITE without truncating the WRITE burst, tDPL should be met as shown in Fig.
Non-Interrupting Write to Precharge
Data for any WRITE burst may be truncated by a subsequent PRECHARGE command as shown in Figure.
Note that only data-inthat are registered prior to the t
DPL
period are written to the internal array, and any subsequent
data-in should be masked with DM, as shown in next Fig. Following the PRECHARGE command, a subsequent com-
mand to the same bank cannot be issued until tRP is met.
Interrupting Write to Precharge
CLK
WRITE PRE
Command
BA, Col
b
Address
DQ D
I
b0
D
IO
b2
BL = 4
D
I
b1
CL = 2 or 3
tDPL
D
I
b3
CLK
DQ
WRITE PRE
Command
BA, Col
b
Address
D
I
b0
D
IO
b2
BL = 4
D
I
b1
CL = 2 or 3
tDPL
Rev 1.2 /Aug. 2009 39
11
128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
BURST TERMINATE
The BURST TERMINATE command is used to truncate read bursts (with autoprecharge disabled). The most recently
registered READ command prior to the BURST TERMINATE command will be truncated, as shown in the Operation sec-
tion of this datasheet. Note the BURST TERMINATE command is not bank specific. Also, this command can be used to
terminate the write bursts.
BURST TERMINATE COMMAND
CS
A0 ~ Amax
WE
CAS
RAS
Don't Care
CLK
CKE
High
BA0, 1
Rev 1.2 /Aug. 2009 40
11
128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
PRECHARGE
The PRECHARGE command is used to deactivate the open row in a particular bank or the open row in all banks.
Another command to the same bank (or banks) being precharged must not be issued until the precharge time (t
RP
) is
completed.
If one bank is to be precharged, the particular bank address needs to be specified. If all banks are to be precharged,
A10 should be set high along with the PRECHARGE command. If A10 is high, BA0 and BA1 are ignored. A PRECHARGE
command will be treated as a NOP if there is no open row in that bank, or if the previously open row is already in the
process of precharging.
PRECHARGE command
AUTO PRECHARGE
Auto Precharge is a feature which performs the same individual bank precharge function as described above, but with-
out requiring an explicit command.
This is accomplished by using A10 (A10=high), to enable auto precharge in conjunction with a specific Read or Write
command. This precharges the bank/row after the Read or Write burst is complete.
Auto precharge is non persistent, so it should be enabled with a Read or Write command each time auto precharge is
desired. Auto precharge ensures that a precharge is initiated at the earliest valid stage within a burst.
The user must not issue another command to the same bank until the precharge time (t
RP
) is completed.
Don't Care
CS
A0~Amax
WE
CAS
RAS
CKE
High
BA
BA0,1
A10
Bank Address
A10 defines the precharge
mode when a precharge
command, a read command
or a write command is
issued.
If A10 = High when a
precharge command is
issued, all banks are
precharged.
If A10 = Low when a
precharge command is
issued, only the bank that is
selected by BA1/BA0 is
precharged.
If A10 = High when read or
write command, auto-
precharge function is
enabled.
While A10 = Low, auto-
precharge function is
disabled.
Rev 1.2 /Aug. 2009 41
11
128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
AUTO REFRESH AND SELF REFRESH
Mobile SDRAM devices require a refresh of all rows in any rolling 64ms interval. Each refresh is generated in one of two
ways: by an explicit AUTO REFRESH command, or by an internally timed event in SELF REFRESH mode:
-
AUTO REFRESH.
This command is used during normal operation of the Mobile SDRAM. It is non persistent, so must be issued each time
a refresh is required. The refresh addressing is generated by the internal refresh controller.The Mobile SDRAM requires
AUTO REFRESH commands at an average periodic interval of t
REF
.
To allow for improved efficiency in scheduling and switching between tasks, some flexibility in the absolute refresh
interval is provided. A maximum of eight AUTO REFRESH commands can be posted to any given Mobile SDRMA, and
the maximum absolute interval between any AUTO REFRESH command and the next AUTO REFRESH command is
8*t
REF
.
-SELF REFRESH.
This state retains data in the Mobile SDRAM, even if the rest of the system is powered down. Note refresh interval tim-
ing while in Self Refresh mode is scheduled internally in the Mobile SDRAM and may vary and may not meet tREF time.
After executing a self-refresh command, the self-refresh operation continues while CKE is held Low. During selfrefresh
operation, all ROW addresses are refreshed by the internal refresh timer. A self-refresh is terminated by a self-refresh
exit command. Before and after self-refresh mode, execute auto-refresh to all refresh addresses in or within tREF
(max.) period on the condition 1 and 2 below.
1. Enter self-refresh mode within time as below* after either burst refresh or distributed refresh at equal interval to all
refresh addresses are completed.
2. Start burst refresh or distributed refresh at equal interval to all refresh addresses within time as below*after exiting
from self-refresh mode.
Note: tREF (max.) / refresh cycles.
The use of SELF REFRESH mode introduces the possibility that an internally timed event can be missed when CKE is
raised for exit from self refresh mode. Upon exit from SELF REFRESH an extra AUTO REFRESH command is recom-
mended. In the self refresh mode, two additional power-saving options exist. They are Temperature Compensated Self
Refresh and Partial Array Self Refresh and are described in the Extended Mode Register section.
The Self Refresh command is used to retain cell data in the Mobile SDRAM. In the Self Refresh mode, the Mobile
SDRAM operates refresh cycle asynchronously.
The Self Refresh command is initiated like an Auto Refresh command except CKE is disabled(Low). The Mobile SDRAM
can accomplish an special Self Refresh operation by the specific modes(PASR) programmed in extended mode regis-
ters. The Mobile SDRAM can control the refresh rate automatically by the temperature value of Auto TCSR(Tempera-
ture Compensated Self Refresh) to reduce self refresh current and select the memory array to be refreshed by the
value of PASR(Partial Array Self Refresh). The Mobile SDRAM can reduce the self refresh current(I
DD6
) by using these
two modes.
Rev 1.2 /Aug. 2009 42
11
128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
AUTO REFRESH COMMAND
SELF REFRESH ENTRY COMMAND
Note 1: If all banks are in the idle status and CKE is inactive (low level), the self refresh mode is set.
Function CKEn-1 CKEn CS RAS CAS WE DQM ADDR A10/AP BA
Auto Refresh H H L L L H X X
Self Refresh Entry H L L L L H X X
CS
A0 ~ Amax
WE
CAS
RAS
Don't Care
CLK
CKE
BA0, 1
CS
A0 ~ Amax
WE
CAS
RAS
Don't Care
CLK
CKE High
BA0, 1
Rev 1.2 /Aug. 2009 43
11
128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
MODE REGISTER SET
The mode registers are loaded via the address bits.
BA0 and BA1 are used to select between the Mode Register and the Extended Mode Register. See the Mode Register
description in the register definition section. The MODE REGISTER SET command can only be issued when all banks
are idle and no bursts are in progress, and a subsequent executable command cannot be issued until t
MRD
is met.
MODE REGISTER SET COMMAND
Note:
BA0=BA1=Low loads the Mode Register, whereas BA0=Low and BA1=High loads the Extended Mode Register.
Code = Mode Register / Extended Mode Register selection
(BA0, BA1) and op-code (A0 - An)
t
MRD
DEFINITION
CS
A0 ~ A m ax
W E
CAS
RAS
Don't Care
CLK
CKE
BA0, 1
Code
Code
High
MRS NOP Valid
Code Valid
tMRD
CLK
Command
Address
Don't Care
Rev 1.2 /Aug. 2009 44
11
128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
POWER DOWN
Power down occurs if CKE is set low coincident with Device Deselect or NOP command and when no accesses are in
progress. If power down occurs when all banks are idle, it is Precharge Power Down.
If Power down occurs when one or more banks are Active, it is referred to as Active power down. The device cannot
stay in this mode for longer than the refresh requirements of the device, without losing data. The power down state is
exited by setting CKE high while issuing a Device Deselect or NOP command.
If power-down occurs when all banks are idle, this mode is referred to as precharge power-down; if power-down
occurs when there is a row active in any bank, this mode is referred to as active power-down. Entering power-down
deactivates the input and output buffers, excluding CKE, for maximum power savings while in standby.
DEEP POWER-DOWN
The Deep Power-Down (DPD) mode enables very low standby currents. All internal voltage generators inside the
Mobile SDRAM are stopped and all memory data is lost in this mode.
All the information in the Mode Register and the Extended Mode Register is lost. Next Figure,
DEEP POWER-DOWN
COMMAND
shows the DEEP POWER-DOWN command All banks must be in idle state with no activity on the data bus
prior to entering the DPD mode. While in this state, CKE must be held in a constant low state.
To exit the DPD mode, CKE is taken high after the clock is stable and NOP command must be maintained for at least
200 us. After 200 us a complete re-initialization routing is required defined for the initialization sequence.
CS
A0 ~ Amax
WE
CAS
RAS
Don't Care
CLK
CKE
BA0, 1
POWER-DOWN COMMAND
CS
A0 ~
Amax
WE
CAS
RAS
Don't Care
CLK
CKE
BA0, 1
DEEP POWER-DOWN COMMAND
Rev 1.2 /Aug. 2009 45
11
128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
CLK
CKE
COMMAND NOP NOP ACTIVE
Input buffers gated off
tRCD
tRAS
tRCEnter power-down mode. Exit power-down mode.
All banks idle
DON
’
T CARE
CLK
CKE
COMMAND
Pre-charge all Deep Power down entry
DON
’
T CARE
NOP APCGBSTNOPPCG
Input buffers gated off 200us
(min)
tCKS tCKS
Deep Power down Exit
Rev 1.2 /Aug. 2009 46
11
128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
Qa2Qa1Qa0
Ra
Ra Ca
t
CKS
t
CKS
t
CKS
t
CKS
CLK
CKE
CS
RAS
WE
VDDR
BA0, BA1
AP
DQ
DQM
CAS
Precharge
Power down
Entry
Precharge
Power down
Exit
Row Active
Active
Power down
Entry
Active
Power down
Exit
Read Precharge
Hi-Z
Don
’
t care
Note : CKE should be set high at least 1CLK + tCKS prior to Row active command.
Power down Exit Time
Rev 1.2 /Aug. 2009 47
11
128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
tCK
tCH
NOP AUTO
REFRESH Any COM
tCKS tCKH
tCMS tCMH
ALL BANKS
SINGLE BANK
Precharge all
active banks DON
’
T CARE
CLK
CKE
COMMAND
DQM
A0-
A9,Amax
A10
BA0, BA1
DQ
PRECHARGE
BANKS
tAS tAH
High-Z
tRP tXSR
tCL
NOP or COMMAND
INHIBIT
Enter self refresh mode Exit self refresh mode
(Restart refresh time base)
tCKS tRAS(MIN)
Rev 1.2 /Aug. 2009 48
11
128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
Power-up and Initialization
Like a Synchronous DRAM, Low Power SDRAM(Mobile SDRAM) must be powered up and initialized in a predefined man-
ner. Power must be applied to V
DD
and V
DDQ
(simultaneously). The clock signal must be started at the same time.
After power up, an initial pause of 200 usec is required. And a precharge all command will be issued to the Mobile
SDRAM. Then, 8 or more Auto refresh cycles will be provided. After the Auto refresh cycles are completed, a mode
register set(MRS) command will be issued to program the specific mode of operation (Cas Latency, Burst length, etc.)
And a extended mode register set command will be issued to program specific mode of self refresh operation(PASR).
The following these cycles, the Mobile SDRAM is ready for normal opeartion.
Programming the registers
Mode Register
The mode register contains the specific mode of operation of the Mobile SDRAM. This register includes the selection of
a burst length(1, 2, 4, 8, Full Page), a cas latency(2 or 3), a burst type. The mode register set must be done before any
activate command after the power up sequence. Any contents of the mode register be altered by re-programming the
mode register through the execution of mode register set command.
Extended Mode Register
The extended mode register contains the specific features of self refresh opeartion of the Mobile SDRAM. This register
includes the selection of partial arrays to be refreshed(half array, quarter array, etc.). The extended mode register set
must be done before any activate command after the power up sequence. Any contents of the mode register be altered
by re-programming the mode register through the execution of extended mode register set command.
Bank(Row) Active
The Bank Active command is used to activate a row in a specified bank of the device. This command is initiated by
activating CS, RAS and deasserting CAS, WE at the positive edge of the clock. The value on the BA1 and BA0 selects
the bank, and the value on the A0-A11 selects the row. This row remains active for column access until a precharge
command is issued to that bank. Read and write opeartions can only be initiated on this activated bank after the min-
imum t
RCD
time is passed from the activate command.
Read
The READ command is used to initiate the burst read of data. This command is initiated by activating CS, CAS, and
deasserting WE, RAS at the positive edge of the clock. BA1 and BA0 inputs select the bank, A8-A0 address inputs select
the sarting column location. The value on input A10 determines whether or not Auto Precharge is used. If Auto Pre-
charge is selected the row being accessed will be precharged at the end of the READ burst; if Auto Precharge is not
selected, the row will remain active for subsequent accesses.
The length of burst and the CAS latency will be determined by the values programmed during the MRS command.
Write
The WRITE command is used to initiate the burst write of data. This command is initiated by activating CS, CAS, WE
and deasserting RAS at the positive edge of the clock. BA1 and BA0 inputs select the bank, A8-A0 address inputs select
the starting column location. The value on input A10 determines whether or not Auto Precharge is used.
If Auto Precharge is selected the row being accessed will be precharged at the end of the WRITE burst; if Auto Pre-
charge is not selected, the row will remain active for subsequent accesses.
Rev 1.2 /Aug. 2009 49
11
128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
Precharge
The Precharge command is used to close the open row in a particular bank or the open row in all banks. When the
precharge command is issued with address A10, high, then all banks will be precharged, and If A10 is low, the open
row in a particular bank will be precharged. The bank(s) will be available when the minimum t
RP
time is met after the
precharge command is issued.
Auto Precharge
The Auto Precharge command is issued to close the open row in a particular bank after READ or WRITE operation. If
A10 is high when a READ or WRITE command is issued, the READ or WRITE with Auto Precharge is initiated.
Burst Termination
The Burst Termination is used to terminate the burst operation. This function can be accomplished by asserting a Burst
Stop command or a Precharge command during a burst READ or WRITE operation. The Precharge command interrupts
a burst cycle and close the active bank, and the Burst Stop command terminates the existing burst operation leave the
bank open.
Data Mask
The Data Mask comamnd is used to mask READ or WRITE data. During a READ operation, When this command is
issued, data outputs are disabled and become high impedance after two clock delay. During a WRITE operation, When
this command is issued, data inputs can't be written with no clock delay.
If data mask is initiated by asserting low on DQM during the read cycle, the data outputs are enabled.
If DQM is asserted to High. the data outputs are masked (disabled) and become Hi-Z state after 2 cycle later. During
the write cycle, DQM mask data input with zero latency
DM
CMD
CK
D0 D1
DQ
Data M asking
0 Latency
Hi-
Z
D
IN0
D0 D1 D0 D1
D
IN2
D0 D1
W RIT
M K M K
Data Masking
0 Latency
W rite Data M asking
D M
C M D
CK
D 0 D 1
D Q
Data M asking
2 Latency
H i-
Z
D
O U T 0
D 0 D 1
D
O U T1
D 0 D 1
D
D O T 2
D 0 D 1
READ
M K
Read D ata M asking
Rev 1.2 /Aug. 2009 50
11
128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
Clock Suspend
The Clock Suspend command is used to suspend the internal clock of Mobile SDRAM. The clock suspend operation
stops transmission of the clock to the internal circuits of the device during burst transfer of data to stop the operation
of the device. During normal access mode, CKE is keeping High. When CKE is low, it freezes the internal clock and ex-
tends data Read and Write operations. (See examples in next Figures)
CLK
CKE
Q1 Q2 Q3 Q4
RD
Internal CLK
Clock Suspend
Mode
WR
D1 D2 D3 D4
Clock Suspend
Mode
DQ
Command
CKE
Command
Internal CLK
DQ
Frozen Int. CLK by CKE
(CKE = Fixed Low)
Masked by CKE
Masked by CKE
Frozen Int. CLK by CKE
(CKE = Fixed Low)
Rev 1.2 /Aug. 2009 51
11
128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
Power Down
The Power Down command is used to reduce standby current. Before this command is issued, all banks must be pre-
charged and tRP must be passed after a precharge command. Once the Power Down command is initiated by keeping
CKE low, all of the input buffer except CKE are gated off.
Auto Refresh
The Auto Refresh command is used during normal operation and is similar to C
BR
refresh in Conventional DRAMs.
This command must be issued each time a refresh is required. When an Auto Refresh command is issued , the address
bits is ''Don't care'', because the specific address bits is generated by internal refresh address counter.
Self Refresh
The Self Refresh command is used to retain cell data in the Mobile SDRAM. In the Self Refresh mode, the Mobile SDRAM
operates refresh cycle asynchronously.
The Self Refresh command is initiated like an Auto Refresh command except CKE is disabled(Low). The Mobile SDRAM
can accomplish an special Self Refresh operation by the specific modes(PASR) programmed in extended mode registers.
The Mobile SDRAM can control the refresh rate automatically by the temperature value of Auto TCSR(Temperature
Compensated Self Refresh) to reduce self refresh current and select the memory array to be refreshed by the value of
PASR(Partial Array Self Refresh). The Mobile SDRAM can reduce the self refresh current(I
DD6
) by using these two
modes.
Deep Power Down
The Deep Power Down Mode is used to achieve maximum power reduction by cutting the power of the whole memory
array of the devices.
For more information, see the special operation for Low Power consumption of this data sheet.
Rev 1.2 /Aug. 2009 52
11
128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
Special Operation for Low Power Consumption
Deep Power Down Mode
Deep Power Down Mode is an operating mode to achieve maximum power reduction by cutting the power of the whole
memory array of the devices.
Data will not be retained once the device enters Deep Power Down Mode.
Full initialization is required when the device exits from Deep Power Down Mode.
Truth Table
Deep Power Down Mode Entry
The Deep Power Down Mode is entered by having CS and WE held low with RAS and CAS high at the rising edge of
the clock, while CKE is low. The following diagram illustrates deep power down mode entry.
Current State Command CKE
n-1
CKE
n
CS RAS CAS WE
Idle Deep Power Down Entry H L L H H L
Deep Power Down Deep Power Down Exit L H X X X X
CKE
CS
RAS
CAS
WE
Pre-charge
if needed
tRP
Deep Power
Down Entry
Rev 1.2 /Aug. 2009 53
11
128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
Deep Power Down Mode
(Continued)
Deep Power Down Mode Exit Sequence
The Deep Power Down mode is exited by asserting CKE high.
After the exit, the following sequence is needed to enter a new command.
1. Maintain NOP input conditions for a minimum of 200usec
2. Issue precharge commands for all banks of the device
3. Issue 8 or more auto refresh commands
4. Issue a mode register set command to initialize the mode register
5. Issue an extended mode register set command to initialize the extended mode register
The following timing diagram illustrates deep power down mode exit sequence.
CKE
CLK
CS
RAS
CAS
WE
200us tRP tRC
Deep Power Down
Exit
All Banks
Precharge
Auto
Refresh
Auto
Refresh
Mode
Register
Set
Extended
Mode
Register
Set
New
Command
Accepted
Here
Rev 1.2 /Aug. 2009 54
11
128Mbit (8Mx16bit) Mobile SDR Memory
H55S1262EFP Series
PACKAGE INFORMATION
54 Ball FBGA 0.8mm pitch (Size 8.0mm x 8.0mm, t=1.0mm max)
Unit
[mm]
0.80
Bottom
View
0.34
+/- 0.05
0.80 Typ.
0.80
Typ. 0.95 +0.05/-0.10
3.20
1.60
0.45
+/- 0.05
A1 INDEX MARK
1.375
8.00
+/- 0.10
0.80
8.00 +/- 0.10