SFH 3211
SFH 3211 FA
NPN-Silizium -Foto tra nsistor in SMT TOPLED® RG-Gehäuse
Silicon NPN Phototransistor in SMT TOPLED® RG-Package
SFH 3211 SFH 3211 FA
2002-01-25 1
Wesentliche Merkmale
• Speziell geeignet für Anwendungen im Bereich
von 380 nm bis 1150 nm (SFH 3211) und bei
880 nm (SFH 3211 FA)
• Hohe Linearität
• Gruppiert lieferbar
Anwendungen
• Miniaturlichtschranken
• Industrieelektronik
• „Messen/Steuern/Regeln“
Typ
Type Bestellnummer
Ordering Code
SFH 3211 Q62702-P5127
SFH 3211-3/-4 Q62702-P5481
SFH 3211 FA Q62702-P5443
SFH 3211 FA-3/-4 Q62702-P5482
Features
• Especially suitable for applications from
380 nm to 1150 nm (SFH 32 11) and of 880 nm
(SFH 3211 FA)
• High linearity
• Available in groups
Applications
• Miniature photointerrupters
• Industrial electronics
• For control and drive circuits
2002-01-25 2
SFH 3211, SFH 3211 FA
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg – 40 …+ 100 °C
Kollektor-Emitterspannung
Collector-emitter voltage VCE 35 V
Kollektorstrom
Collector current IC15 mA
Kollektorspitzenstrom, τ < 10 µs
Collector surge current ICS 75 mA
Verlustleistung, TA = 25 °C
Total power dissipation Ptot 165 mW
Wärmewiderstand für Montage auf PC-Board
Thermal resistance for mounting on pcb RthJA 450 K/W
SFH 3211, SFH 3211 FA
2002-01-25 3
Kennwerte (TA = 25 °C, λ = 950 nm)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
SFH 3211 SFH 3211 FA
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity λSmax 860 900 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectral range of sensitivity
S = 10% of Smax
λ380 …1150 730 …1120 nm
Bestrahlungsempfindliche Fläche (∅ 240 µm)
Radiant sensitive area A0.045 0.045 mm2
Abmessung der Chipfläche
Dimensions of chip area L×B
L×W0.45 ×0.45 0.45 ×0.45 mm ×mm
Abstand Chipoberfläche zu Gehäuseoberfläche
Distance chip front to case surface H0.5 …0.7 0.5 …0.7 mm
Halbwinkel
Half angle ϕ± 60 ± 60 Grad
deg.
Kapazität, VCE = 0 V, f = 1 MHz, E=0
Capacitance CCE 5.0 5.0 pF
Dunkelstrom
Dark current
VCE = 25 V, E=0
ICEO 1 (≤ 200) 1 (≤ 200) nA
2002-01-25 4
SFH 3211, SFH 3211 FA
Directional Characteristics
Srel = f (ϕ)
Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern
gekennzeichnet.
The phototransistors are grouped according to their spectral sensitivity and distinguished by
arabian figures.
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
SFH
3211/FA -2 -3 -4
Fotostrom, λ = 950 nm
Photocurrent
Ee = 0.1 mW/cm2, VCE = 5 V
SFH 3211:
Ev = 1000 Ix, Normlicht/
standard light A, VCE = 5 V
IPCE
IPCE
≥ 16 16 …32
420
25 …50
650
40 …80
1000
µA
µA
Anstiegszeit/Abfallzeit
Rise and fall time
IC = 1 mA, VCC = 5 V, RL = 1 kΩ
tr, tf7678µs
Kollektor-Emitter-
Sättigungsspannung
Collector-emitter saturation voltage
IC = IPCEmin1) × 0.3,
Ee = 0.1 mW/cm2
VCEsat 150 150 150 150 mV
1) IPCEmin ist der minima le Fotostrom der jew eiligen Gruppe.
1) IPCEmin is the min. photocurren t of th e sp ec if ied group.
OHF01402
90
80
70
60
50
40 30 20 10
20 40 60 80 100 1200.40.60.81.0
ϕ
0.2
0.4
0.6
0.8
1.0
100 0
0
0
SFH 3211, SFH 3211 FA
2002-01-25 5
Relati ve Sp ectral Sen si ti vi ty,
SFH 3211 Srel = f (λ)
Tota l Power Dissip ati o n
Ptot = f (TA)
Dark Current
ICEO = f (TA), VCE = 5 V, E = 0
0
OHF00207
400
S
rel
λ
nm
%
500 600 700 800 900 1100
10
20
30
40
50
60
70
80
100
OHF00871
tot
P
00
40
80
120
160
mW
200
20 40 60 80 ˚C 100
T
A
T
OHF01530
A
CEO
Ι
-1
10
10
0
10
1
10
2
10
3
-25
nA
0 25 50 75 100
˚C
Relative Spectral Sensitivity,
SFH 3211 FA Srel = f (λ)
Photocurrent
IPCE = f (VCE), Ee = Par ame te r
Capacitance
CCE = f (VCE), f = 1 MHz, E = 0
λ
OHF00468
0
rel
S
400
20
40
60
80
%
100
nm500 600 700 800 900 1100
V
OHF01529
CE
PCE
Ι
0
0
10
10
-2
10
-1
mA
V
5 10 15 20 25 30 35
mW
cm
2
0.1
0.25
2
cm
mW
0.5
2
cm
mW
1
2
cm
mW
V
OHF01528
CE
-2
10
CE
C
10
-1
10
0
10
1
10
2
0V
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
pF
Photocurrent
IPCE = f (Ee), VCE = 5 V
Dark Current
ICEO = f (VCE), E = 0
Photocurrent
IPCE /IPCE25° = f (TA), VCE = 5 V
E
OHF01924
e
PCE
Ι
10
-1
10
-3
10
-2
10
0
10
0
10
1
10
2
10
3
2
mW/cm
2
3
4
µA
V
OHF01527
CE
CEO
Ι
-3
10
10
-2
10
-1
10
0
10
1
0 5 10 15 20 25 30 35V
nA
T
OHF01524
A
0
-25
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 25 50 75 100
Ι
PCE
PCE
Ι
25
C
2002-01-25 6
SFH 3211, SFH 3211 FA
Maßzeichnung
Package Outlines
Maße werden wi e fo lgt angegeben: m m (inc h) / Dimensions are s pecified as follo w s: m m (inch).
GPLY6067
0...0.1 (0.004)
Collector marking
4˚±1
3.0 (0.118)
2.6 (0.102)
2.3 (0.091)
2.1 (0.083)
3.4 (0.134)
3.0 (0.118)
(2.4 (0.094))
2.1 (0.083)
1.7 (0.067)
5.4 (0.213)
5.0 (0.197)
0.6 (0.024)
0.4 (0.016)
0.3 (0.012) min
0.3 (0.012) max
1.0 (0.039)
0.9 (0.035)
Collector
SFH 3211, SFH 3211 FA
2002-01-25 7
Zusätzliche Informationen über allgemeine Lötbed ingungen erh alt en Sie auf Anfrage.
For addi tio nal informat ion on general s oldering condit ions please c ontact us.
Published by OSRAM Opto Semiconductors GmbH & Co. OHG
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention please!
The inform at ion describes the type of co m ponent and sha ll not be c ons idered as assured char ac te ris tics .
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recyc ling operat ors known t o you. We can also help y ou – get in touch wit h your near est sales offic e.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Compo nents use d in life-support de vices or syste ms must be express ly authorize d for such purp ose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critica l component is a co mponent usedin a l ife-support devi ce or system whose failure can re asonably be expec ted
to cause t he fail ure of tha t life -suppo rt dev ice or s ystem, or to affe ct i ts saf ety or effecti venes s of t hat device o r sy stem.
2 Life sup port device s or syst ems ar e int ended (a ) to b e imp lanted in t he hu man body , or ( b) to supp ort a nd/or main tain
and sust ain human life. If th ey fail, it is reasonab le t o as sume that the health of the user m ay be endangered.
Löthinweise
Soldering Conditions
Bauform
Types Tauch-, Schwall- und Schlepplötung
Dip, Wave and Drag Soldering Reflowlötung
Reflow Soldering
Lötbad-
temperatur
Temperature
of the
Soldering
Bath
Maximal
zulässige
Lötzeit
Max. Perm.
Soldering
Time
Abstand
Lötstelle –
Gehäuse
Distance
between
Solder Joint
and Case
Lötzonen-
temperatur
Temperature
of Soldering
Zone
Maximale
Durchlaufzeit
Max. Transit
Time
TOPLED RG 260 °C10 s –245 °C 10 s
